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1. 发明授权

US08451565B1 Magnetoresistive head having perpendicularly offset anisotropy films and a hard disk drive using the same 有权
标题翻译：具有垂直偏移的各向异性膜的磁阻头和使用其的硬盘驱动器
公开(公告)号：US08451565B1
公开(公告)日：2013-05-28
申请号：US13301596
申请日：2011-11-21
申请人： Susumu Okamura , Takahiro Ibusuki
发明人： Susumu Okamura , Takahiro Ibusuki
IPC分类号： G11B5/33
CPC分类号： G11B5/3932 , G01R33/093 , Y10T29/49032 , Y10T428/1121
摘要： In one embodiment, a magnetic head includes a lower shield layer, a sensor stack positioned above the lower shield layer, the sensor stack including a free layer, a layered hard bias magnet positioned above the lower shield layer and on both sides of the sensor stack in a track width direction, and an upper shield layer positioned above the hard bias magnet and the sensor stack. The hard bias magnet includes a perpendicular anisotropy film positioned above the lower shield layer and aligned with both sides of the sensor stack in the track width direction, wherein the perpendicular anisotropy film directs magnetic fields in a direction perpendicular to planes of formation thereof, and an in-plane anisotropy film positioned above the perpendicular anisotropy film, wherein the in-plane anisotropy film directs magnetic fields in a direction of planes of formation thereof.
摘要翻译：在一个实施例中，磁头包括下屏蔽层，位于下屏蔽层上方的传感器堆叠，传感器堆叠包括自由层，位于下屏蔽层上方并位于传感器堆叠两侧的分层硬偏置磁体并且位于硬偏置磁体和传感器堆叠之上的上屏蔽层。硬偏磁体包括位于下屏蔽层上方的垂直各向异性膜，并且沿着磁道宽度方向与传感器堆叠的两侧对齐，其中垂直各向异性膜在与其形成平面垂直的方向上引导磁场，位于垂直各向异性膜之上的面内各向异性膜，其中面内各向异性膜在其形成平面的方向上引导磁场。

2. 发明申请

US20090141410A1 CURRENT-PERPENDICULAR-TO-THE-PLANE STRUCTURE MAGNETORESISTIVE ELEMENT AND METHOD OF MAKING THE SAME AND STORAGE APPARATUS 审中-公开
标题翻译：电流 - 平面结构磁阻元件及其制造方法和储存装置
公开(公告)号：US20090141410A1
公开(公告)日：2009-06-04
申请号：US12209824
申请日：2008-09-12
申请人： Arata Jogo , Takahiro Ibusuki , Yutaka Shimizu
发明人： Arata Jogo , Takahiro Ibusuki , Yutaka Shimizu
IPC分类号： G11B5/33
CPC分类号： G01R33/093 , B82Y10/00 , B82Y25/00 , G11B5/3906 , G11B2005/3996 , G11C11/161 , G11C11/1657 , G11C11/1659 , G11C11/1675
摘要： An electrically-conductive or insulating non-magnetic intermediate layer is inserted between a free magnetic layer and a pinned magnetic layer in a current-perpendicular-to-the-plane (CPP) structure magnetoresistive element. At least one of the free magnetic layer and the pinned magnetic layer is made of a nitrided magnetic metal alloy. This nitrided magnetic layers allows the CPP structure magnetoresistive element to enjoy an increased magnetoresistance change (ΔRA). In addition, the saturation magnetic flux density (Bs) decreases in a nitrided magnetic metal alloy. The inversion of magnetization is thus easily caused in the low Bs magnetic layer. The detection sensitivity of the CPP structure magnetoresistive element is improved. The CPP structure magnetoresistive element is thus allowed to detect magnetic bit data with higher accuracy.
摘要翻译：在电流垂直于平面（CPP）结构的磁阻元件中，在自由磁性层和被钉扎的磁性层之间插入导电或绝缘的非磁性中间层。自由磁性层和被钉扎磁性层中的至少一个由氮化磁性金属合金制成。这种氮化磁性层允许CPP结构磁阻元件享受增加的磁阻变化（DeltaRA）。此外，氮化磁性金属合金中的饱和磁通密度（Bs）也减小。因此，在低Bs磁性层中容易引起磁化反转。提高了CPP结构磁阻元件的检测灵敏度。因此，CPP结构磁阻元件能够以更高的精度检测磁位数据。

3. 发明授权

US07428130B2 Magnetoresistive element, magnetic head, magnetic storage unit, and magnetic memory unit 失效
标题翻译：磁阻元件，磁头，磁存储单元和磁存储单元
公开(公告)号：US07428130B2
公开(公告)日：2008-09-23
申请号：US11410315
申请日：2006-04-25
申请人： Arata Jogo , Hirotaka Oshima , Takahiro Ibusuki , Yutaka Shimizu , Takuya Uzumaki
发明人： Arata Jogo , Hirotaka Oshima , Takahiro Ibusuki , Yutaka Shimizu , Takuya Uzumaki
IPC分类号： G11B5/39
CPC分类号： H01F10/3254 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11C11/16 , H01F10/3263 , H01F10/3272 , H01F10/3281 , H01L43/08
摘要： A CPP-type magnetoresistive element including a fixed magnetization layer, a non-magnetic metal layer, and a free magnetization layer that are stacked, and a diffusion prevention layer is disclosed. The free magnetization layer includes CoMnAl. The diffusion prevention layer is provided between the non-magnetic metal layer and the free magnetization layer so as to prevent Mn included in the free magnetization layer from diffusing into the non-magnetic metal layer. CoMnAl has a composition within the area formed by connecting Point A (44, 23, 33), Point B (48, 25, 27), Point C (60, 20, 20), Point D (65, 15, 20), Point E (65, 10, 25), Point F (60, 10, 30), and Point A with straight lines in this order in a ternary composition diagram where coordinates of the composition are expressed as (Co content, Mn content, Al content) with each of the Co, Mn, and Al contents being expressed in atomic percentage.
摘要翻译：包括堆叠的固定磁化层，非磁性金属层和自由磁化层的CPP型磁阻元件，以及扩散防止层。自由磁化层包括CoMnAl。在非磁性金属层和自由磁化层之间设置扩散防止层，以防止包含在自由磁化层中的Mn扩散到非磁性金属层。 CoMnAl具有通过连接点A（44,23,33），点B（48,25,27），点C（60,20,20），点D（65,15,20），点E（65,10,25），点F（60,10,30），点A以直线表示，其组成的坐标表示为（Co含量，Mn含量，Al 含量），其中Co，Mn和Al中的每一种以原子百分比表示。

4. 发明申请

US20120320473A1 MAGNETIC SENSOR HAVING A HARD BIAS SEED STRUCTURE 有权
标题翻译：具有硬度偏差结构的磁感应传感器
公开(公告)号：US20120320473A1
公开(公告)日：2012-12-20
申请号：US13164610
申请日：2011-06-20
申请人： Susumu Okamura , Hiroyuki Hoshiya , Takahiro Ibusuki
发明人： Susumu Okamura , Hiroyuki Hoshiya , Takahiro Ibusuki
IPC分类号： G11B21/24 , G11B5/39
CPC分类号： G11B5/39 , B82Y10/00 , G11B5/3912 , G11B5/3932 , G11B2005/3996
摘要： A magnetic sensor having a novel hard bias structure that provides reduced gap spacing for increased data density. The magnetic sensor includes a sensor stack with first and second sides formed on a magnetic shield. A thin insulation layer is formed over the sides of the sensor stack and over the bottom shield. An under-layer comprising Cu—O is formed over the insulation layer and a hard magnetic bias layer is formed over the under-layer. The use of Cu—O as the under-layer allows the under-layer to be made thinner while still maintaining excellent magnetic properties in the hard bias layers formed thereover. This reduced thickness of the under-layer allows the gap spacing (spacing between the top and bottom magnetic shields) to be reduced, which in turn provides increased data density.
摘要翻译：具有新型硬偏置结构的磁传感器，其提供减小的间隙间隔以增加数据密度。磁传感器包括传感器堆叠，其中第一和第二侧形成在磁屏蔽上。在传感器堆叠的两侧和底部屏蔽层之上形成薄的绝缘层。在绝缘层之上形成包含Cu-O的底层，并且在下层上形成硬磁偏置层。通过使用Cu-O作为下层，能够使底层变薄，同时在其上形成的硬质偏压层中保持优异的磁性能。下层的这种减小的厚度允许减小间隙间隔（顶部和底部磁屏蔽之间的间隔），这进而提供增加的数据密度。

5. 发明申请

US20100159283A1 MAGNETIC STORAGE MEDIUM, MANUFACTURING METHOD OF MAGNETIC STORAGE MEDIUM, AND INFORMATION STORAGE DEVICE 审中-公开
标题翻译：磁性储存介质，磁性储存介质的制造方法和信息存储装置
公开(公告)号：US20100159283A1
公开(公告)日：2010-06-24
申请号：US12582306
申请日：2009-10-20
申请人： Takahiro IBUSUKI , Masashige SATO
发明人： Takahiro IBUSUKI , Masashige SATO
IPC分类号： G11B5/66 , B05D5/12
CPC分类号： G11B5/66 , G11B5/667
摘要： A magnetic storage medium includes a substrate, a first magnetic layer film that is deposited on the substrate, and a second magnetic layer film that is a cap layer of the first magnetic layer film. The first magnetic layer film contains a high magnetic anisotropic material and a low-temperature diffusion material which is added to the high magnetic anisotropic material, the low-temperature diffusion material starting diffusion by thermal treatment at a lower temperature than that of the high magnetic anisotropic material. The second magnetic layer film includes a material for promoting diffusion of the low-temperature diffusion material.
摘要翻译：磁性存储介质包括基板，沉积在基板上的第一磁性层膜和作为第一磁性层膜的盖层的第二磁性层膜。第一磁性层膜包含高磁性各向异性材料和低温扩散材料，其被加入到高磁各向异性材料中，低温扩散材料通过热处理开始扩散，温度低于高磁各向异性材料材料。第二磁性层膜包括促进低温扩散材料扩散的材料。

6. 发明申请

US20080232003A1 MAGNETORESISTANCE EFFECT DEVICE, MAGNETIC LAMINATION STRUCTURAL BODY, AND MANUFACTURE METHOD FOR MAGNETIC LAMINATION STRUCTURAL BODY 有权
标题翻译：磁阻效应装置，磁性层压结构体和磁性层压结构体的制造方法
公开(公告)号：US20080232003A1
公开(公告)日：2008-09-25
申请号：US12041396
申请日：2008-03-03
申请人： Takahiro IBUSUKI , Masashige SATO , Shinjiro UMEHARA
发明人： Takahiro IBUSUKI , Masashige SATO , Shinjiro UMEHARA
IPC分类号： G11B5/33 , C23C14/00
CPC分类号： G11B5/3967 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B5/3909 , G11C11/15 , G11C11/16 , H01L43/08 , H01L43/12
摘要： An underlying layer (2) made of NiFeN is disposed over the principal surface of a substrate. A pinning layer (3) made of antiferromagnetic material containing Ir and Mn is disposed on the underlying layer. A reference layer (4c) made of ferromagnetic material whose magnetization direction is fixed through exchange-coupling with the pinning layer directly or via another ferromagnetic material layer, is disposed over the pinning layer. A nonmagnetic layer (7) made of nonmagnetic material is disposed over the reference layer. A free layer (8) made of ferromagnetic material whose magnetization direction changes in dependence upon an external magnetic field, is disposed over the nonmagnetic layer.
摘要翻译：由NiFeN制成的下层（2）设置在基板的主表面上。由含有Ir和Mn的反铁磁材料制成的钉扎层（3）设置在下层上。由铁磁材料制成的参考层（4c）通过与钉扎层直接或通过另一铁磁材料层的交换耦合而固定其磁化方向，设置在钉扎层之上。由非磁性材料制成的非磁性层（7）设置在参考层上。由铁磁材料制成的自由层（8），其磁化方向根据外部磁场而变化，设置在非磁性层上。

7. 发明申请

US20130308228A1 READ SENSOR HAVING A STRUCTURE FOR REDUCING MAGNETIC COUPLING BETWEEN A MAGNETIC BIAS LAYER AND AN UPPER MAGNETIC SHIELD 有权
标题翻译：读取传感器具有减少磁性偏移层与上位磁屏蔽之间的磁耦合的结构
公开(公告)号：US20130308228A1
公开(公告)日：2013-11-21
申请号：US13472326
申请日：2012-05-15
申请人： Hideki Mashima , Nobuo Yoshida , Takahiro Ibusuki , Tsutomu Yasuda
发明人： Hideki Mashima , Nobuo Yoshida , Takahiro Ibusuki , Tsutomu Yasuda
IPC分类号： G11B5/39 , B23P17/00
CPC分类号： G11B5/3932 , B82Y10/00 , G11B5/3909 , G11B2005/3996
摘要： A magnetic sensor having reduced read gap thickness, reduced signal noise and improved signal to noise ratio. The sensor includes a sensor stack and hard bias structures formed at either side of the sensor stack for biasing the free layer of the sensor. A protective layer is formed over a portion of the hard bias structure, however a portion of the hard bias structure extends upward toward the upper shield and is disposed between the protective layer and the sensor stack as a result of the process used to form the magnetic bias structure. This portion of the hard bias structure that extends toward the upper shield has a reduced magnetization relative to the rest of the hard bias structure so that it will not magnetically couple with the upper shield.
摘要翻译：具有减小的读取间隙厚度，降低的信号噪声和改善的信噪比的磁传感器。传感器包括传感器堆叠和形成在传感器堆叠的任一侧的硬偏压结构，用于偏置传感器的自由层。在硬偏压结构的一部分上形成保护层，然而硬偏压结构的一部分向上朝向上屏蔽延伸，并且由于用于形成磁性的过程而被设置在保护层和传感器堆之间偏倚结构。朝向上屏蔽延伸的硬偏压结构的该部分相对于硬偏压结构的其余部分具有减小的磁化，使得其不会与上屏蔽件磁耦合。

8. 发明申请

US20130128381A1 MAGNETORESISTIVE HEAD HAVING PERPENDICULARLY OFFSET ANISOTROPY FILMS AND A HARD DISK DRIVE USING THE SAME 有权
标题翻译：具有相同方向偏振片的磁性头和使用其的硬盘驱动器
公开(公告)号：US20130128381A1
公开(公告)日：2013-05-23
申请号：US13301596
申请日：2011-11-21
申请人： Susumu Okamura , Takahiro Ibusuki
发明人： Susumu Okamura , Takahiro Ibusuki
IPC分类号： G11B5/39 , G11B5/127 , G11B21/02
CPC分类号： G11B5/3932 , G01R33/093 , Y10T29/49032 , Y10T428/1121
摘要： In one embodiment, a magnetic head includes a lower shield layer, a sensor stack positioned above the lower shield layer, the sensor stack including a free layer, a layered hard bias magnet positioned above the lower shield layer and on both sides of the sensor stack in a track width direction, and an upper shield layer positioned above the hard bias magnet and the sensor stack. The hard bias magnet includes a perpendicular anisotropy film positioned above the lower shield layer and aligned with both sides of the sensor stack in the track width direction, wherein the perpendicular anisotropy film directs magnetic fields in a direction perpendicular to planes of formation thereof, and an in-plane anisotropy film positioned above the perpendicular anisotropy film, wherein the in-plane anisotropy film directs magnetic fields in a direction of planes of formation thereof.
摘要翻译：在一个实施例中，磁头包括下屏蔽层，位于下屏蔽层上方的传感器堆叠，传感器堆叠包括自由层，位于下屏蔽层上方并位于传感器堆叠两侧的分层硬偏置磁体并且位于硬偏置磁体和传感器堆叠之上的上屏蔽层。硬偏磁体包括位于下屏蔽层上方的垂直各向异性膜，并且沿着磁道宽度方向与传感器堆叠的两侧对齐，其中垂直各向异性膜在与其形成平面垂直的方向上引导磁场，位于垂直各向异性膜之上的面内各向异性膜，其中面内各向异性膜在其形成平面的方向上引导磁场。

9. 发明申请

US20110164448A1 Tunneling magnetoresistance (TMR) device, its manufacture method, magnetic head and magnetic memory using TMR device 有权
标题翻译：隧道磁阻（TMR）器件，其制造方法，磁头和使用TMR器件的磁存储器
公开(公告)号：US20110164448A1
公开(公告)日：2011-07-07
申请号：US13046567
申请日：2011-03-11
申请人： Masashige Sato , Shinjiro Umehara , Takahiro Ibusuki
发明人： Masashige Sato , Shinjiro Umehara , Takahiro Ibusuki
IPC分类号： G11C11/00 , G11B5/33 , G11B5/39
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G01R33/098 , G11B5/3906 , H01F10/3204 , H01F10/3254 , H01F10/3272 , H01F10/3295 , H01F41/303 , H01L43/08 , H01L43/12 , Y10T428/1114
摘要： A barrier layer is disposed over a pinned layer made of ferromagnetic material having a fixed magnetization direction, the barrier layer having a thickness allowing electrons to transmit therethrough by a tunneling phenomenon. A first free layer is disposed over the barrier layer, the first free layer being made of amorphous or fine crystalline soft magnetic material which changes a magnetization direction under an external magnetic field. A second free layer is disposed over the first free layer, the second free layer being made of crystalline soft magnetic material which changes a magnetization direction under an external magnetic field and being exchange-coupled to the first free layer. A tunneling magnetoresistance device is provided which has good magnetic characteristics and can suppress a tunnel resistance change rate from being lowered.
摘要翻译：阻挡层设置在由具有固定的磁化方向的铁磁材料制成的被钉扎层上，阻挡层具有允许电子通过隧道现象透过的厚度。第一自由层设置在阻挡层上，第一自由层由在外部磁场下改变磁化方向的非晶或细晶体软磁材料制成。第二自由层设置在第一自由层之上，第二自由层由结晶软磁材料制成，其在外部磁场下改变磁化方向并与第一自由层交换耦合。提供了具有良好磁特性并能够抑制隧道电阻变化率降低的隧道磁阻装置。

10. 发明申请

US20100284103A1 MAGNETORESISTIVE EFFECT DEVICE, MAGNETIC HEAD, AND INFORMATION STORAGE APPARATUS 有权
标题翻译：磁阻效应装置，磁头和信息存储装置
公开(公告)号：US20100284103A1
公开(公告)日：2010-11-11
申请号：US12842447
申请日：2010-07-23
申请人： Takahiro Ibusuki , Masashige Sato , Shinjiro Umehara
发明人： Takahiro Ibusuki , Masashige Sato , Shinjiro Umehara
IPC分类号： G11B5/127 , G11B20/10
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3906 , H01F10/3254 , H01F10/3272 , H01L27/228 , H01L43/10
摘要： A magnetoresistive effect device includes an underlayer, an antiferromagnetic layer, a first ferromagnetic layer, a nonmagnetic layer, and a second ferromagnetic layer which are multilayered in this order on a substrate. The underlayer is formed of a metal nitride, and the antiferromagnetic layer is formed of an antiferromagnetic material including Ir and Mn.
摘要翻译：磁阻效应器件包括在衬底上依次层叠的底层，反铁磁层，第一铁磁层，非磁性层和第二铁磁层。底层由金属氮化物形成，反铁磁层由包含Ir和Mn的反铁磁材料形成。

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