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1. 发明授权

US06770210B2 Magnetoresistance effect element and method for producing same 失效
标题翻译：磁阻效应元件及其制造方法
公开(公告)号：US06770210B2
公开(公告)日：2004-08-03
申请号：US10059198
申请日：2002-01-31
申请人： Susumu Hashimoto , Yuichi Ohsawa , Michiko Hara
发明人： Susumu Hashimoto , Yuichi Ohsawa , Michiko Hara
IPC分类号： G44C122
CPC分类号： H01L43/12 , Y10T29/49032
摘要： There is provided a magnetoresistance effect element which is capable of causing a large sense current to flow between electrodes and which has a smaller dispersion in direction of magnetization of a CPP element based on a magnetic field due to the sense current and has a lager reproducing output, and a method for producing the same. The magnetoresistance effect element is produced by: after forming a first electrode, forming a magnetoresistance effect film on the first electrode; applying a self-condensing organic resist on the magnetoresistance effect film, and thereafter, causing the organic resist to be droplets; subsequently, forming an insulating film thereon, and thereafter, removing the organic resist to form a groove portion in the insulating film to expose the top surface of the magnetoresistance effect film; and filling the groove portion with an electrode material to form a second electrode.
摘要翻译：提供了一种磁电阻效应元件，其能够导致大的感测电流在电极之间流动，并且由于感测电流而基于磁场具有较小的CPP元件的磁化方向的偏移，并且具有较大的再现输出，及其制造方法。磁阻效应元件通过以下方式产生：在形成第一电极之后，在第一电极上形成磁阻效应膜; 在磁阻效应膜上施加自凝聚有机抗蚀剂，然后使有机抗蚀剂成为液滴; 随后在其上形成绝缘膜，然后除去有机抗蚀剂以在绝缘膜中形成沟槽部分以暴露磁阻效应膜的顶表面; 并用电极材料填充槽部分以形成第二电极。

2. 发明授权

US06757143B2 Magnetoresistive effect element, its manufacturing method, magnetic head, magnetic reproducing apparatus, and magnetic memory 有权
标题翻译：磁阻效应元件，其制造方法，磁头，磁再现装置和磁存储器
公开(公告)号：US06757143B2
公开(公告)日：2004-06-29
申请号：US10105342
申请日：2002-03-26
申请人： Tomomi Tunayama , Masayuki Takagishi , Kohichi Tateyama , Yuichi Ohsawa , Susumu Hashimoto , Michiko Hara , Akio Hori
发明人： Tomomi Tunayama , Masayuki Takagishi , Kohichi Tateyama , Yuichi Ohsawa , Susumu Hashimoto , Michiko Hara , Akio Hori
IPC分类号： G11B5127
CPC分类号： H01L27/228 , B82Y10/00 , B82Y25/00 , G11B5/3903 , G11B2005/3996 , H01F10/3268 , H01L27/224 , H01L43/08 , Y10T29/49044
摘要： In a magnetoresistive effect element, at least one of electrodes for supplying a current perpendicularly to the film plane of a magnetoresistive effect film is narrower than the distance between bias-applying films. The sensitivity of the magnetoresistive effect film is lower in regions thereof near the bias-applying films due to an intensive bias magnetic field from the bias-applying films. However, the electrodes are disposed in an inner region having a high sensitivity avoiding those regions with a lower sensitivity to ensure a high sensitivity. The electrodes disposed on and under the magnetoresistive effect film are pillar-shaped to concentrate the sense current such that the sense current can be concentrically supplied exclusively to the region with the high sensitivity.
摘要翻译：在磁阻效应元件中，用于向垂直于磁阻效应膜的膜平面供给电流的电极中的至少一个比偏置施加膜之间的距离窄。由于来自偏置施加膜的强偏压磁场，磁阻效应膜的敏感性在偏置施加膜附近的区域中较低。然而，电极设置在具有高灵敏度的内部区域中，避免了具有较低灵敏度的那些区域，以确保高灵敏度。设置在磁阻效应膜上和下方的电极是柱状的，以集中感测电流，使得感测电流可以同心地提供给具有高灵敏度的区域。

3. 发明授权

US5912790A Thin film magnetic recording-reproducing head having a high recording density and high fidelity 失效
标题翻译：具有高记录密度和高保真度的薄膜磁记录再现头
公开(公告)号：US5912790A
公开(公告)日：1999-06-15
申请号：US818110
申请日：1997-03-13
申请人： Hiroaki Yoda , Akio Hori , Michiko Hara , Naoyuki Inoue , Yuichi Ohsawa , Susumu Hashimoto , Takeo Sakakubo , Norio Ozawa , Teruo Sasho
发明人： Hiroaki Yoda , Akio Hori , Michiko Hara , Naoyuki Inoue , Yuichi Ohsawa , Susumu Hashimoto , Takeo Sakakubo , Norio Ozawa , Teruo Sasho
IPC分类号： G11B5/31 , G11B5/39 , G11B5/127 , G11B5/187
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3103 , G11B5/3116 , G11B5/313 , G11B5/3163 , G11B5/3967 , G11B2005/3996
摘要： A composite magnetic head includes a recording head and a reproducing head. The recording head may be formed below or above the reproducing head. The lower of the recording and reproducing heads includes a first electrode. In addition, a conductive layer acting as a pole structure for the recording head includes a portion defining a hole through which a second electrode is made to contact the first electrode.
摘要翻译：复合磁头包括记录头和再现头。记录头可以形成在再现头的下方或上方。记录和再现头的下部包括第一电极。此外，作为记录头的极结构的导电层包括限定使第二电极与第一电极接触的孔的部分。

4. 发明授权

US06928724B2 Magnetoresistance effect element and method for producing same 失效
标题翻译：磁阻效应元件及其制造方法
公开(公告)号：US06928724B2
公开(公告)日：2005-08-16
申请号：US10793838
申请日：2004-03-08
申请人： Susumu Hashimoto , Yuichi Ohsawa , Michiko Hara
发明人： Susumu Hashimoto , Yuichi Ohsawa , Michiko Hara
IPC分类号： G01R33/09 , G11B5/39 , H01L43/08 , H01L43/12 , G11B5/127 , H04R31/00
CPC分类号： H01L43/12 , Y10T29/49032
摘要： There is provided a magnetoresistance effect element which is capable of causing a large sense current to flow between electrodes and which has a smaller dispersion in direction of magnetization of a CPP element based on a magnetic field due to the sense current and has a lager reproducing output, and a method for producing the same. The magnetoresistance effect element is produced by: after forming a first electrode, forming a magnetoresistance effect film on the first electrode; applying a self-condensing organic resist on the magnetoresistance effect film, and thereafter, causing the organic resist to be droplets; subsequently, forming an insulating film thereon, and thereafter, removing the organic resist to form a groove portion in the insulating film to expose the top surface of the magnetoresistance effect film; and filling the groove portion with an electrode material to form a second electrode.
摘要翻译：提供了一种磁电阻效应元件，其能够导致大的感测电流在电极之间流动，并且由于感测电流而基于磁场具有较小的CPP元件的磁化方向的偏移，并且具有较大的再现输出，及其制造方法。磁阻效应元件通过以下方式产生：在形成第一电极之后，在第一电极上形成磁阻效应膜; 在磁阻效应膜上施加自凝聚有机抗蚀剂，然后使有机抗蚀剂成为液滴; 随后在其上形成绝缘膜，然后除去有机抗蚀剂以在绝缘膜中形成沟槽部分以暴露磁阻效应膜的顶表面; 并用电极材料填充槽部分以形成第二电极。

5. 发明授权

US5946167A Magnetoresistive sensor having lead and/or bias layer structure contributing to a narrow gap 失效
标题翻译：具有有助于窄间隙的引线和/或偏置层结构的磁阻传感器
公开(公告)号：US5946167A
公开(公告)日：1999-08-31
申请号：US816432
申请日：1997-03-14
申请人： Michiko Hara , Hiroaki Yoda , Yuichi Ohsawa
发明人： Michiko Hara , Hiroaki Yoda , Yuichi Ohsawa
IPC分类号： G11B5/31 , G11B5/39
CPC分类号： G11B5/3903 , G11B5/3967 , G11B5/3116 , G11B5/313
摘要： The present invention provides a magnetoresistive sensor comprising a magnetoresistive film (MR film) having a magnetic field response portion; a pair of leads on the MR film to supply sensing current to the MR film; and upper and lower (first and second) magnetic shield layers arranged so as to sandwich the MR film through a magnetic gap film, respectively. The pair of lead layers is deposited on the side of the magnetic field response portion, i.e., a portion of the MR film between the pair of the leads is the magnetic field response portion. The lead layer respectively provides multi-stage tapered portions, comprising a first tapered portion having a steep angle with respect to the MR film surface, and a second tapered portion having a shallow angle with respect to the MR film surface and provided continuously with the first tapered portion.
摘要翻译：本发明提供一种包括具有磁场响应部分的磁阻膜（MR膜）的磁阻传感器; 在MR膜上的一对引线，用于向MR膜提供感测电流; 以及分别通过磁隙膜夹住MR膜的上下（第一和第二）磁屏蔽层。一对引线层沉积在磁场响应部分的一侧，即一对引线之间的MR膜的一部分是磁场响应部分。引线层分别提供多级锥形部分，其包括相对于MR膜表面具有陡角的第一锥形部分和相对于MR膜表面具有浅角度的第二锥形部分，并连续地设置有第一锥形部分。

6. 发明授权

US06483673B1 Differential detection magnetoresistance head with laminated structure 失效
标题翻译：差分检测磁阻头与层叠结构
公开(公告)号：US06483673B1
公开(公告)日：2002-11-19
申请号：US09085101
申请日：1998-05-28
申请人： Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Yuzo Kamiguchi , Susumu Hashimoto , Tomomi Funayama , Hiromi Fuke , Junichi Akiyama , Kazuhiro Saito
发明人： Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Yuzo Kamiguchi , Susumu Hashimoto , Tomomi Funayama , Hiromi Fuke , Junichi Akiyama , Kazuhiro Saito
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/1278 , G11B5/3903 , G11B5/3954 , G11B2005/0029 , G11B2005/3996
摘要： A GMR element part is formed of a laminated structure which comprises at least one pair of ferromagnetic layers and a nonmagnetic intermediate layer interposed between the pair of ferromagnetic layers. Signal magnetic field detecting ferromagnetic layers will be optionally disposed one each outside the pair of ferromagnetic layers. The GMR element part consists of a laminated structure which is provided with one pair of GMR ferromagnetic layers opposed to each other across a nonmagnetic intermediate layer or a laminated structure which is provided with one pair of GMR ferromagnetic layer opposed to each other across a nonmagnetic intermediate layer and at least one low-permeability ferromagnetic layer disposed there between through the medium of a nonmagnetic intermediate layer. The GMR element part functions as a read head for sensing the resistance which is varied when signal magnetic fields of mutual opposite directions are applied to the pair of GMR ferromagnetic layers and displaying a differential detection type output response. A granular type ferromagnetic intermediate layer will be used as the GMR element part.
摘要翻译： GMR元件部分由层叠结构形成，该叠层结构包括至少一对铁磁层和介于一对铁磁层之间的非磁性中间层。信号磁场检测铁磁层将可选地布置在一对铁磁层的外侧。 GMR元件部分由层叠结构构成，该叠层结构具有一对跨越非磁性中间层彼此相对的GMR铁磁体层或层叠结构，该层叠结构具有跨越非磁性中间体彼此相对的一对GMR铁磁层层和至少一个通过非磁性中间层的介质设置在其间的低磁导率铁磁层。 GMR元件部分用作读取头，用于感测当相互相反方向的信号磁场施加到一对GMR铁磁层并且显示差分检测型输出响应时变化的电阻。将使用粒状铁磁中间层作为GMR元件部分。

7. 发明授权

US06395388B1 Magnetoresistance effect element 失效
标题翻译：磁阻效应元件
公开(公告)号：US06395388B1
公开(公告)日：2002-05-28
申请号：US09442032
申请日：1999-11-17
申请人： Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Susumu Hashimoto , Atsuhito Sawabe , Yuzo Kamiguchi , Masashi Sahashi , Hiromi Fuke
发明人： Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Susumu Hashimoto , Atsuhito Sawabe , Yuzo Kamiguchi , Masashi Sahashi , Hiromi Fuke
IPC分类号： G11B566
CPC分类号： B82Y25/00 , B82Y10/00 , E05B17/2007 , E05B67/36 , E05C1/04 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , H01F10/324 , H01F10/325 , H01F10/3268 , H01F10/3286 , H01L43/08 , H01L43/10 , Y10S428/90 , Y10T70/498 , Y10T70/5319 , Y10T292/1025 , Y10T428/11 , Y10T428/1107 , Y10T428/26 , Y10T428/265
摘要： The present invention provides an exchange coupling film having a stacked-film-structure consisting of a ferromagnetic film made of at least one material of Fe, Co and Ni, and an antiferromagnetic film, wherein the exchange coupling film made of a ferromagnetic material to which an element is added, is provided at the interface between the ferromagnetic film and the antiferromagnetic film so as to improve the lattice matching, which results in the enhancement of the exchange coupling force, and a magnetoresistance effect element including such an exchange coupling film as described above, and an electrode for supplying a current to the ferromagnetic film which constitutes the exchange coupling film.
摘要翻译：本发明提供一种交换耦合膜，其具有由由Fe，Co和Ni的至少一种材料制成的铁磁膜和反铁磁膜构成的层叠膜结构，其中由铁磁材料制成的交换耦合膜，在铁磁膜和反铁磁膜之间的界面处设置元件，以改善晶格匹配，这导致交换耦合力的增强，以及包括如上所述的这种交换耦合膜的磁电阻效应元件以及用于向构成交换耦合膜的铁磁膜提供电流的电极。

8. 发明授权

US5738946A Magnetoresistance effect element 失效
标题翻译：磁阻效应元件
公开(公告)号：US5738946A
公开(公告)日：1998-04-14
申请号：US652784
申请日：1996-05-23
申请人： Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Susumu Hashimoto , Atsuhito Sawabe , Yuzo Kamiguchi , Masashi Sahashi
发明人： Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Susumu Hashimoto , Atsuhito Sawabe , Yuzo Kamiguchi , Masashi Sahashi
IPC分类号： G11B5/39 , H01F10/32 , H01L43/08 , H01L43/10 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , H01F10/324 , H01F10/325 , H01F10/3268 , H01L43/08 , H01L43/10 , G11B2005/3996 , G11B5/3932 , Y10S428/90 , Y10S428/928 , Y10T428/1121 , Y10T428/12465 , Y10T428/12493 , Y10T428/12542 , Y10T428/12576 , Y10T428/1259 , Y10T428/12611 , Y10T428/1266 , Y10T428/12674 , Y10T428/1275 , Y10T428/12806 , Y10T428/12854 , Y10T428/12861 , Y10T428/12875 , Y10T428/12882 , Y10T428/12889 , Y10T428/12896 , Y10T428/12903 , Y10T428/1291 , Y10T428/12931
摘要： It is an object of the present invention to provide a magnetoresistance effect element which has a film with a spin valve structure or an artificial lattice film having good soft magnetic characteristics, and which can be applied to a high-sensitivity magnetic head. The present invention provides a magneto-resistance effect element including a stacked film formed on a substrate by sequentially stacking a ferromagnetic film containing as its main constituents at least one elements selected from the group consisting of Co, Fe, and Ni, a nonmagnetic film, and the ferromagnetic film, wherein the two ferromagnetic films are not coupled with each other, and the closest packed plane of each ferromagnetic film is oriented in a direction perpendicular to the film surface.
摘要翻译：本发明的目的是提供一种磁阻效应元件，其具有具有自旋阀结构的膜或具有良好软磁特性的人造网格膜，并且可以应用于高灵敏度磁头。本发明提供一种磁电阻效应元件，其包括：通过依次层叠含有选自Co，Fe和Ni中的至少一种元素作为其主要成分的铁磁性膜，形成在基板上的非磁性膜，和铁磁膜，其中两个铁磁膜彼此不耦合，并且每个铁磁膜的最紧密的堆积平面在垂直于膜表面的方向上取向。

9. 发明授权

US5585199A Magnetoresistance effect head 失效
标题翻译：磁阻效应头
公开(公告)号：US5585199A
公开(公告)日：1996-12-17
申请号：US303014
申请日：1994-09-08
申请人： Yuzo Kamiguchi , Susumu Hashimoto , Hitoshi Iwasaki , Yuichi Ohsawa , Masashi Sahashi
发明人： Yuzo Kamiguchi , Susumu Hashimoto , Hitoshi Iwasaki , Yuichi Ohsawa , Masashi Sahashi
IPC分类号： G11B5/012 , G11B5/39 , H01F10/32 , H01F1/00 , G11B21/00
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , H01F10/3281 , G11B2005/3996 , G11B5/012 , H01F10/3295 , Y10S428/928 , Y10T428/12465 , Y10T428/12535
摘要： A magnetoresistance effect head is disclosed which is provided with a spin valve film of the three-layer laminate construction comprising a pair of magnetic layers made of a Co-based alloy and a nonmagnetic intermediate layer interposed between the pair of magnetic layers. This magnetoresistance effect head satisfies the expressions, 3.ltoreq.d.sub.1 .ltoreq.7, 3.ltoreq.d.sub.2 .ltoreq.7, and 0.ltoreq. (d.sub.1 -d.sub.2)/d.sub.1 .ltoreq.0.40, wherein d.sub.1 and d.sub.2 stand for the thicknesses (nm) of the pair of magnetic layers (providing d.sub.1 .gtoreq.d.sub.2). A soft magnetic layer of high resistance is disposed contiguously to that of the pair of magnetic layers which has the direction of magnetization thereof varied by an external magnetic layer. The total thickness of this soft magnetic layer and the magnetic layer contiguous thereto is in the range of from 5 to 40 nm. In the case of a magnetoresistance effect head which is provided with a spin valve film of the five-layer laminate construction, the thicknesses (nm), d.sub.1 and d.sub.2, of the two outer magnetic layers similarly satisfy the conditions mentioned above. Further, the thickness (nm), d.sub.3, of the center magnetic layer satisfies the expression, 1.ltoreq.d.sub.3 .ltoreq.2/3d.sub.1. As a result, the magnetoresistance effect head acquires the ability to produce a large rate of change of magnetic resistance with high repeatability.
摘要翻译：公开了一种磁阻效应头，其具有三层层压结构的自旋阀膜，该三层层压结构包括一对由Co基合金制成的磁性层和介于该一对磁性层之间的非磁性中间层。该磁电阻效应头满足表达式，其中d1和d2表示为3 / = d2）。高电阻的软磁性层与具有由外部磁性层变化的磁化方向的一对磁性层的磁性层相邻设置。该软磁性层和与其相邻的磁性层的总厚度为5〜40nm的范围。在具有五层层叠结构的自旋阀膜的磁阻效应头的情况下，两个外磁层的厚度（nm），d1和d2类似地满足上述条件。此外，中心磁性层的厚度（nm），d3满足表达式1，d3，其中E 2，结果，磁阻效应头获得以高重复性产生大的磁阻变化率的能力。

10. 发明授权

US5549978A Magnetoresistance effect element 失效
标题翻译：磁阻效应元件
公开(公告)号：US5549978A
公开(公告)日：1996-08-27
申请号：US144258
申请日：1993-11-01
申请人： Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Susumu Hashimoto , Atsuhito Sawabe , Yuzo Kamiguchi , Masashi Sahashi
发明人： Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Susumu Hashimoto , Atsuhito Sawabe , Yuzo Kamiguchi , Masashi Sahashi
IPC分类号： G11B5/39 , H01F10/32 , H01L43/08 , H01L43/10 , G11B5/66 , B32B9/00
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , H01F10/324 , H01F10/325 , H01F10/3268 , H01L43/08 , H01L43/10 , G11B2005/3996 , G11B5/3932 , Y10S428/90 , Y10S428/928 , Y10T428/1121 , Y10T428/12465 , Y10T428/12493 , Y10T428/12542 , Y10T428/12576 , Y10T428/1259 , Y10T428/12611 , Y10T428/1266 , Y10T428/12674 , Y10T428/1275 , Y10T428/12806 , Y10T428/12854 , Y10T428/12861 , Y10T428/12875 , Y10T428/12882 , Y10T428/12889 , Y10T428/12896 , Y10T428/12903 , Y10T428/1291 , Y10T428/12931
摘要： It is an object of the present invention to provide a magnetoresistance effect element which has a film with a spin valve structure or an artificial lattice film having good soft magnetic characteristics, and which can be applied to a high-sensitivity magnetic head. The present invention provides a magnetoresistance effect element including a stacked film formed on a substrate by sequentially stacking a ferromagnetic film containing as its main constituents at least one elements selected from the group consisting of Co, Fe, and Ni, a nonmagnetic film, and the ferromagnetic film, wherein the two ferromagnetic films are not coupled with each other, and the closest packed plane of each ferromagnetic film is oriented in a direction perpendicular to the film surface.
摘要翻译：本发明的目的是提供一种磁阻效应元件，其具有具有自旋阀结构的膜或具有良好软磁特性的人造网格膜，并且可以应用于高灵敏度磁头。本发明提供一种磁电阻效应元件，其包括通过依次层叠含有作为其主要成分的至少一种选自Co，Fe和Ni的元素的铁磁性膜，非磁性膜，形成在基板上的层叠膜，铁磁膜，其中两个铁磁膜彼此不耦合，并且每个铁磁膜的最紧密的堆积平面在垂直于膜表面的方向上取向。

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