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    • 1. 发明授权
    • Magnetic memory element and magnetic memory apparatus
    • 磁存储元件和磁存储装置
    • US08982611B2
    • 2015-03-17
    • US13526961
    • 2012-06-19
    • Tsuyoshi KondoHirofumi MoriseShiho NakamuraJunichi Akiyama
    • Tsuyoshi KondoHirofumi MoriseShiho NakamuraJunichi Akiyama
    • G11C11/00G11C11/16
    • G11C11/1673G11C11/161Y10S977/933Y10S977/935
    • A magnetic memory element includes a first magnetic layer, a second magnetic layer, a first intermediate layer, a first magnetic wire, a first input unit, and a first detection unit. The first magnetic layer has magnetization fixed. The second magnetic layer has magnetization which is variable. The first intermediate layer is between the first magnetic layer and the second magnetic layer. The first magnetic wire extends in a first direction perpendicular to a direction connecting from the first magnetic layer to the second magnetic layer and is adjacent to the second magnetic layer. In addition, write-in is performed by propagating a first spin wave through the first magnetic wire and by passing a first current from the first magnetic layer toward the second magnetic layer. Read-out is performed by passing a second current from the first magnetic layer toward the second magnetic layer.
    • 磁存储元件包括第一磁性层,第二磁性层,第一中间层,第一磁性线,第一输入单元和第一检测单元。 第一磁性层具有固定的磁化。 第二磁性层具有可变的磁化。 第一中间层位于第一磁性层和第二磁性层之间。 第一磁性线沿垂直于从第一磁性层连接到第二磁性层的方向的第一方向延伸并与第二磁性层相邻。 此外,通过将第一自旋波传播通过第一磁线并通过使第一电流从第一磁性层向第二磁性层传递来执行写入。 通过将第二电流从第一磁性层传递到第二磁性层来进行读出。