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1. 发明授权

US06395388B1 Magnetoresistance effect element 失效
标题翻译：磁阻效应元件
公开(公告)号：US06395388B1
公开(公告)日：2002-05-28
申请号：US09442032
申请日：1999-11-17
申请人： Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Susumu Hashimoto , Atsuhito Sawabe , Yuzo Kamiguchi , Masashi Sahashi , Hiromi Fuke
发明人： Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Susumu Hashimoto , Atsuhito Sawabe , Yuzo Kamiguchi , Masashi Sahashi , Hiromi Fuke
IPC分类号： G11B566
CPC分类号： B82Y25/00 , B82Y10/00 , E05B17/2007 , E05B67/36 , E05C1/04 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , H01F10/324 , H01F10/325 , H01F10/3268 , H01F10/3286 , H01L43/08 , H01L43/10 , Y10S428/90 , Y10T70/498 , Y10T70/5319 , Y10T292/1025 , Y10T428/11 , Y10T428/1107 , Y10T428/26 , Y10T428/265
摘要： The present invention provides an exchange coupling film having a stacked-film-structure consisting of a ferromagnetic film made of at least one material of Fe, Co and Ni, and an antiferromagnetic film, wherein the exchange coupling film made of a ferromagnetic material to which an element is added, is provided at the interface between the ferromagnetic film and the antiferromagnetic film so as to improve the lattice matching, which results in the enhancement of the exchange coupling force, and a magnetoresistance effect element including such an exchange coupling film as described above, and an electrode for supplying a current to the ferromagnetic film which constitutes the exchange coupling film.
摘要翻译：本发明提供一种交换耦合膜，其具有由由Fe，Co和Ni的至少一种材料制成的铁磁膜和反铁磁膜构成的层叠膜结构，其中由铁磁材料制成的交换耦合膜，在铁磁膜和反铁磁膜之间的界面处设置元件，以改善晶格匹配，这导致交换耦合力的增强，以及包括如上所述的这种交换耦合膜的磁电阻效应元件以及用于向构成交换耦合膜的铁磁膜提供电流的电极。

2. 发明授权

US5738946A Magnetoresistance effect element 失效
标题翻译：磁阻效应元件
公开(公告)号：US5738946A
公开(公告)日：1998-04-14
申请号：US652784
申请日：1996-05-23
申请人： Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Susumu Hashimoto , Atsuhito Sawabe , Yuzo Kamiguchi , Masashi Sahashi
发明人： Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Susumu Hashimoto , Atsuhito Sawabe , Yuzo Kamiguchi , Masashi Sahashi
IPC分类号： G11B5/39 , H01F10/32 , H01L43/08 , H01L43/10 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , H01F10/324 , H01F10/325 , H01F10/3268 , H01L43/08 , H01L43/10 , G11B2005/3996 , G11B5/3932 , Y10S428/90 , Y10S428/928 , Y10T428/1121 , Y10T428/12465 , Y10T428/12493 , Y10T428/12542 , Y10T428/12576 , Y10T428/1259 , Y10T428/12611 , Y10T428/1266 , Y10T428/12674 , Y10T428/1275 , Y10T428/12806 , Y10T428/12854 , Y10T428/12861 , Y10T428/12875 , Y10T428/12882 , Y10T428/12889 , Y10T428/12896 , Y10T428/12903 , Y10T428/1291 , Y10T428/12931
摘要： It is an object of the present invention to provide a magnetoresistance effect element which has a film with a spin valve structure or an artificial lattice film having good soft magnetic characteristics, and which can be applied to a high-sensitivity magnetic head. The present invention provides a magneto-resistance effect element including a stacked film formed on a substrate by sequentially stacking a ferromagnetic film containing as its main constituents at least one elements selected from the group consisting of Co, Fe, and Ni, a nonmagnetic film, and the ferromagnetic film, wherein the two ferromagnetic films are not coupled with each other, and the closest packed plane of each ferromagnetic film is oriented in a direction perpendicular to the film surface.
摘要翻译：本发明的目的是提供一种磁阻效应元件，其具有具有自旋阀结构的膜或具有良好软磁特性的人造网格膜，并且可以应用于高灵敏度磁头。本发明提供一种磁电阻效应元件，其包括：通过依次层叠含有选自Co，Fe和Ni中的至少一种元素作为其主要成分的铁磁性膜，形成在基板上的非磁性膜，和铁磁膜，其中两个铁磁膜彼此不耦合，并且每个铁磁膜的最紧密的堆积平面在垂直于膜表面的方向上取向。

3. 发明授权

US5585199A Magnetoresistance effect head 失效
标题翻译：磁阻效应头
公开(公告)号：US5585199A
公开(公告)日：1996-12-17
申请号：US303014
申请日：1994-09-08
申请人： Yuzo Kamiguchi , Susumu Hashimoto , Hitoshi Iwasaki , Yuichi Ohsawa , Masashi Sahashi
发明人： Yuzo Kamiguchi , Susumu Hashimoto , Hitoshi Iwasaki , Yuichi Ohsawa , Masashi Sahashi
IPC分类号： G11B5/012 , G11B5/39 , H01F10/32 , H01F1/00 , G11B21/00
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , H01F10/3281 , G11B2005/3996 , G11B5/012 , H01F10/3295 , Y10S428/928 , Y10T428/12465 , Y10T428/12535
摘要： A magnetoresistance effect head is disclosed which is provided with a spin valve film of the three-layer laminate construction comprising a pair of magnetic layers made of a Co-based alloy and a nonmagnetic intermediate layer interposed between the pair of magnetic layers. This magnetoresistance effect head satisfies the expressions, 3.ltoreq.d.sub.1 .ltoreq.7, 3.ltoreq.d.sub.2 .ltoreq.7, and 0.ltoreq. (d.sub.1 -d.sub.2)/d.sub.1 .ltoreq.0.40, wherein d.sub.1 and d.sub.2 stand for the thicknesses (nm) of the pair of magnetic layers (providing d.sub.1 .gtoreq.d.sub.2). A soft magnetic layer of high resistance is disposed contiguously to that of the pair of magnetic layers which has the direction of magnetization thereof varied by an external magnetic layer. The total thickness of this soft magnetic layer and the magnetic layer contiguous thereto is in the range of from 5 to 40 nm. In the case of a magnetoresistance effect head which is provided with a spin valve film of the five-layer laminate construction, the thicknesses (nm), d.sub.1 and d.sub.2, of the two outer magnetic layers similarly satisfy the conditions mentioned above. Further, the thickness (nm), d.sub.3, of the center magnetic layer satisfies the expression, 1.ltoreq.d.sub.3 .ltoreq.2/3d.sub.1. As a result, the magnetoresistance effect head acquires the ability to produce a large rate of change of magnetic resistance with high repeatability.
摘要翻译：公开了一种磁阻效应头，其具有三层层压结构的自旋阀膜，该三层层压结构包括一对由Co基合金制成的磁性层和介于该一对磁性层之间的非磁性中间层。该磁电阻效应头满足表达式，其中d1和d2表示为3 / = d2）。高电阻的软磁性层与具有由外部磁性层变化的磁化方向的一对磁性层的磁性层相邻设置。该软磁性层和与其相邻的磁性层的总厚度为5〜40nm的范围。在具有五层层叠结构的自旋阀膜的磁阻效应头的情况下，两个外磁层的厚度（nm），d1和d2类似地满足上述条件。此外，中心磁性层的厚度（nm），d3满足表达式1，d3，其中E 2，结果，磁阻效应头获得以高重复性产生大的磁阻变化率的能力。

4. 发明授权

US5549978A Magnetoresistance effect element 失效
标题翻译：磁阻效应元件
公开(公告)号：US5549978A
公开(公告)日：1996-08-27
申请号：US144258
申请日：1993-11-01
申请人： Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Susumu Hashimoto , Atsuhito Sawabe , Yuzo Kamiguchi , Masashi Sahashi
发明人： Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Susumu Hashimoto , Atsuhito Sawabe , Yuzo Kamiguchi , Masashi Sahashi
IPC分类号： G11B5/39 , H01F10/32 , H01L43/08 , H01L43/10 , G11B5/66 , B32B9/00
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , H01F10/324 , H01F10/325 , H01F10/3268 , H01L43/08 , H01L43/10 , G11B2005/3996 , G11B5/3932 , Y10S428/90 , Y10S428/928 , Y10T428/1121 , Y10T428/12465 , Y10T428/12493 , Y10T428/12542 , Y10T428/12576 , Y10T428/1259 , Y10T428/12611 , Y10T428/1266 , Y10T428/12674 , Y10T428/1275 , Y10T428/12806 , Y10T428/12854 , Y10T428/12861 , Y10T428/12875 , Y10T428/12882 , Y10T428/12889 , Y10T428/12896 , Y10T428/12903 , Y10T428/1291 , Y10T428/12931
摘要： It is an object of the present invention to provide a magnetoresistance effect element which has a film with a spin valve structure or an artificial lattice film having good soft magnetic characteristics, and which can be applied to a high-sensitivity magnetic head. The present invention provides a magnetoresistance effect element including a stacked film formed on a substrate by sequentially stacking a ferromagnetic film containing as its main constituents at least one elements selected from the group consisting of Co, Fe, and Ni, a nonmagnetic film, and the ferromagnetic film, wherein the two ferromagnetic films are not coupled with each other, and the closest packed plane of each ferromagnetic film is oriented in a direction perpendicular to the film surface.
摘要翻译：本发明的目的是提供一种磁阻效应元件，其具有具有自旋阀结构的膜或具有良好软磁特性的人造网格膜，并且可以应用于高灵敏度磁头。本发明提供一种磁电阻效应元件，其包括通过依次层叠含有作为其主要成分的至少一种选自Co，Fe和Ni的元素的铁磁性膜，非磁性膜，形成在基板上的层叠膜，铁磁膜，其中两个铁磁膜彼此不耦合，并且每个铁磁膜的最紧密的堆积平面在垂直于膜表面的方向上取向。

5. 发明授权

US5702832A Magnetoresistance effect element 失效
公开(公告)号：US5702832A
公开(公告)日：1997-12-30
申请号：US652850
申请日：1996-05-23
申请人： Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Susumu Hashimoto , Atsuhito Sawabe , Yuzo Kamiguchi , Masashi Sahashi
发明人： Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Susumu Hashimoto , Atsuhito Sawabe , Yuzo Kamiguchi , Masashi Sahashi
IPC分类号： G11B5/39 , H01F10/32 , H01L43/08 , H01L43/10 , G11B5/66 , B32B15/01
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , H01F10/324 , H01F10/325 , H01F10/3268 , H01L43/08 , H01L43/10 , G11B2005/3996 , G11B5/3932 , Y10S428/90 , Y10S428/928 , Y10T428/1121 , Y10T428/12465 , Y10T428/12493 , Y10T428/12542 , Y10T428/12576 , Y10T428/1259 , Y10T428/12611 , Y10T428/1266 , Y10T428/12674 , Y10T428/1275 , Y10T428/12806 , Y10T428/12854 , Y10T428/12861 , Y10T428/12875 , Y10T428/12882 , Y10T428/12889 , Y10T428/12896 , Y10T428/12903 , Y10T428/1291 , Y10T428/12931
摘要： It is an object of the present invention to provide a magnetoresistance effect element which has a film with a spin valve structure or an artificial lattice film having good soft magnetic characteristics, and which can be applied to a high-sensitivity magnetic head. The present invention provides a magnetoresistance effect element including a stacked film formed on a substrate by sequentially stacking a ferromagnetic film containing as its main constituents at least one elements selected from the group consisting of Co, Fe, and Ni, a nonmagnetic film, and the ferromagnetic film, wherein the two ferromagnetic films are not coupled with each other, and the closest packed plane of each ferromagnetic film is oriented in a direction perpendicular to the film surface.

6. 发明授权

US5688605A Magnetoresistance effect element 失效
标题翻译：磁阻效应元件
公开(公告)号：US5688605A
公开(公告)日：1997-11-18
申请号：US652796
申请日：1996-05-23
申请人： Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Susumu Hashimoto , Atsuhito Sawabe , Yuzo Kamiguchi , Masashi Sahashi
发明人： Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Susumu Hashimoto , Atsuhito Sawabe , Yuzo Kamiguchi , Masashi Sahashi
IPC分类号： G11B5/39 , H01F10/32 , H01L43/08 , H01L43/10 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , H01F10/324 , H01F10/325 , H01F10/3268 , H01L43/08 , H01L43/10 , G11B2005/3996 , G11B5/3932 , Y10S428/90 , Y10S428/928 , Y10T428/1121 , Y10T428/12465 , Y10T428/12493 , Y10T428/12542 , Y10T428/12576 , Y10T428/1259 , Y10T428/12611 , Y10T428/1266 , Y10T428/12674 , Y10T428/1275 , Y10T428/12806 , Y10T428/12854 , Y10T428/12861 , Y10T428/12875 , Y10T428/12882 , Y10T428/12889 , Y10T428/12896 , Y10T428/12903 , Y10T428/1291 , Y10T428/12931
摘要： It is an object of the present invention to provide a magnetoresistance effect element which has a film with a spin valve structure or an artificial lattice film having good soft magnetic characteristics, and which can be applied to a high-sensitivity magnetic head. The present invention provides a magnetoresistance effect element including a stacked film formed on a substrate by sequentially stacking a ferromagnetic film containing as its main constituents at least one elements selected from the group consisting of Co, Fe, and Ni, a nonmagnetic film, and the ferromagnetic film, wherein the two ferromagnetic films are not coupled with each other, and the closest packed plane of each ferromagnetic film is oriented in a direction perpendicular to the film surface.
摘要翻译：本发明的目的是提供一种磁阻效应元件，其具有具有自旋阀结构的膜或具有良好软磁特性的人造网格膜，并且可以应用于高灵敏度磁头。本发明提供一种磁电阻效应元件，其包括通过依次层叠含有作为其主要成分的至少一种选自Co，Fe和Ni的元素的铁磁性膜，非磁性膜，形成在基板上的层叠膜，铁磁膜，其中两个铁磁膜彼此不耦合，并且每个铁磁膜的最紧密的堆积平面在垂直于膜表面的方向上取向。

7. 发明授权

US06368706B1 Magnetoresistance effect element 失效
公开(公告)号：US06368706B1
公开(公告)日：2002-04-09
申请号：US09111884
申请日：1998-07-08
申请人： Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Susumu Hashimoto , Atsuhito Sawabe , Yuzo Kamiguchi , Masashi Sahashi , Hiromi Fuke
发明人： Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Susumu Hashimoto , Atsuhito Sawabe , Yuzo Kamiguchi , Masashi Sahashi , Hiromi Fuke
IPC分类号： G11B566
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , H01F10/324 , H01F10/325 , H01F10/3268 , H01L43/08 , H01L43/10 , Y10S428/90 , Y10T428/11 , Y10T428/1114 , Y10T428/1121 , Y10T428/12458 , Y10T428/12875 , Y10T428/1291 , Y10T428/12917 , Y10T428/12931 , Y10T428/26 , Y10T428/265
摘要： The present invention provides an exchange coupling film having a stacked-film-structure consisting of a ferromagnetic film made of at least one material of Fe, Co and Ni, and an antiferromagnetic film, wherein the exchange coupling film made of a ferromagnetic material to which an element is added, is provided at the interface between the ferromagnetic film and the antiferromagnetic film so as to improve the lattice matching, which results in the enhancement of the exchange coupling force, and a magnetoresistance effect element including such an exchange coupling film as described above, and an electrode for supplying a current to the ferromagnetic film which constitutes the exchange coupling film.

8. 发明授权

US6159593A Magnetoresistance effect element 失效
公开(公告)号：US6159593A
公开(公告)日：2000-12-12
申请号：US61070
申请日：1998-04-16
申请人： Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Susumu Hashimoto , Atsuhito Sawabe , Yuzo Kamiguchi , Masashi Sahashi , Hiromi Fuke
发明人： Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Susumu Hashimoto , Atsuhito Sawabe , Yuzo Kamiguchi , Masashi Sahashi , Hiromi Fuke
IPC分类号： G11B5/39 , H01F10/32 , H01L43/08 , H01L43/10 , G11B5/66
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , H01F10/324 , H01F10/325 , H01F10/3268 , H01L43/08 , H01L43/10 , Y10S428/90 , Y10T428/11 , Y10T428/1114 , Y10T428/1121 , Y10T428/12458 , Y10T428/12875 , Y10T428/1291 , Y10T428/12917 , Y10T428/12931 , Y10T428/26 , Y10T428/265
摘要： The present invention provides an exchange coupling film having a stacked-film-structure consisting of a ferromagnetic film made of at least one material of Fe, Co and Ni, and an antiferromagnetic film, wherein the exchange coupling film made of a ferromagnetic material to which an element is added, is provided at the interface between the ferromagnetic film and the antiferromagnetic film so as to improve the lattice matching, which results in the enhancement of the exchange coupling force, and a magnetoresistance effect element including such an exchange coupling film as described above, and an electrode for supplying a current to the ferromagnetic film which constitutes the exchange coupling film.

9. 发明授权

US5780176A Magnetoresistance effect element 失效
公开(公告)号：US5780176A
公开(公告)日：1998-07-14
申请号：US672912
申请日：1996-06-28
申请人： Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Susumu Hashimoto , Atsuhito Sawabe , Yuzo Kamiguchi , Masashi Sahashi , Hiromi Fuke
发明人： Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Susumu Hashimoto , Atsuhito Sawabe , Yuzo Kamiguchi , Masashi Sahashi , Hiromi Fuke
IPC分类号： G11B5/39 , H01F10/32 , H01L43/08 , H01L43/10 , G11B5/66
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , H01F10/324 , H01F10/325 , H01F10/3268 , H01L43/08 , H01L43/10 , G11B2005/3996 , G11B5/3932 , Y10S428/90 , Y10T428/11 , Y10T428/1114 , Y10T428/1121 , Y10T428/12458 , Y10T428/12875 , Y10T428/1291 , Y10T428/12917 , Y10T428/12931 , Y10T428/26 , Y10T428/265
摘要： The present invention provides an exchange coupling film having a stacked-film-structure consisting of a ferromagnetic film made of at least one material of Fe, Co and Ni, and an antiferromagnetic film, wherein the exchange coupling film made of a ferromagnetic material to which an element is added, is provided at the interface between the ferromagnetic film and the antiferromagnetic film so as to improve the lattice matching, which results in the enhancement of the exchange coupling force, and a magnetoresistance effect element including such an exchange coupling film as described above, and an electrode for supplying a current to the ferromagnetic film which constitutes the exchange coupling film.

10. 发明授权

US5725963A Magnetoresistance effect element 失效
公开(公告)号：US5725963A
公开(公告)日：1998-03-10
申请号：US652849
申请日：1996-05-23
申请人： Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Susumu Hashimoto , Atsuhito Sawabe , Yuzo Kamiguchi , Masashi Sahashi
发明人： Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Susumu Hashimoto , Atsuhito Sawabe , Yuzo Kamiguchi , Masashi Sahashi
IPC分类号： G11B5/39 , H01F10/32 , H01L43/08 , H01L43/10 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , H01F10/324 , H01F10/325 , H01F10/3268 , H01L43/08 , H01L43/10 , G11B2005/3996 , G11B5/3932 , Y10S428/90 , Y10S428/928 , Y10T428/1121 , Y10T428/12465 , Y10T428/12493 , Y10T428/12542 , Y10T428/12576 , Y10T428/1259 , Y10T428/12611 , Y10T428/1266 , Y10T428/12674 , Y10T428/1275 , Y10T428/12806 , Y10T428/12854 , Y10T428/12861 , Y10T428/12875 , Y10T428/12882 , Y10T428/12889 , Y10T428/12896 , Y10T428/12903 , Y10T428/1291 , Y10T428/12931
摘要： It is an object of the present invention to provide a magnetoresistance effect element which has a film with a spin valve structure or an artificial lattice film having good soft magnetic characteristics, and which can be applied to a high-sensitivity magnetic head. The present invention provides a magnetoresistance effect element including a stacked film formed on a substrate by sequentially stacking a ferromagnetic film containing as its main constituents at least one elements selected from the group consisting of Co, Fe, and Ni, a nonmagnetic film, and the ferromagnetic film, wherein the two ferromagnetic films are not coupled with each other, and the closest packed plane of each ferromagnetic film is oriented in a direction perpendicular to the film surface.

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