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    • 4. 发明授权
    • Photo-mask having exposure blocking region and methods of designing and fabricating the same
    • 具有曝光阻挡区域的光掩模及其设计和制造方法
    • US07560198B2
    • 2009-07-14
    • US11145985
    • 2005-06-07
    • Il-Yong JangSeong-Woon ChoiSeong-Yong MoonJeong-Yun LeeSung-Hoon Jang
    • Il-Yong JangSeong-Woon ChoiSeong-Yong MoonJeong-Yun LeeSung-Hoon Jang
    • G03F1/00
    • G03F1/36
    • A photo-mask has a main mask pattern in a main region, a density correcting pattern in a peripheral region, and an exposure blocking pattern interposed between the main mask pattern and density correcting pattern. The exposure blocking pattern is configured to prevent the density correcting pattern from being transcribed to a wafer. The photo-mask is made by providing mask substrate on which a mask layer and a photoresist layer are disposed, providing design data that specifies at least the main mask pattern, and using the design data to derive exposure data that controls the exposure of the photoresist layer. The exposure data includes information that specifies the exposure blocking pattern, the portion of the peripheral region to be occupied by the density correcting pattern, and the pattern density of that portion of the peripheral region to be occupied by the density correcting pattern.
    • 光掩模在主区域中具有主掩模图案,在周边区域中具有浓度校正图案,以及插入在主掩模图案和密度校正图案之间的曝光阻挡图案。 曝光阻挡图案被配置为防止将密度校正图案转录到晶片。 光掩模是通过提供其上设置有掩模层和光致抗蚀剂层的掩模基板制成的,提供至少指定主掩模图案的设计数据,并且使用该设计数据来导出控制光致抗蚀剂曝光的曝光数据 层。 曝光数据包括指定曝光阻挡图案的信息,由密度校正图案占据的外围区域的部分以及由密度校正图案占据的外围区域的那部分的图案密度。