专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08340397B2 Extensible system and method for stereo matching in real-time 有权
标题翻译：实时立体匹配的可扩展系统和方法
公开(公告)号：US08340397B2
公开(公告)日：2012-12-25
申请号：US11678428
申请日：2007-02-23
申请人： Jae Wook Jeon , Seung Hun Jin , Jung Uk Cho , Sung Kee Park , Munsang Kim , Kyoung Mu Lee , Jong Eun Byun
发明人： Jae Wook Jeon , Seung Hun Jin , Jung Uk Cho , Sung Kee Park , Munsang Kim , Kyoung Mu Lee , Jong Eun Byun
IPC分类号： G06K9/00 , G06K9/56 , G06K9/64 , G03B35/08
CPC分类号： G06K9/32 , G06T7/593 , G06T2207/10021
摘要： Disclosed are a system and a method extensible for performing, in real-time, stereo snatching for calculating depth images with a result of searching for points of similarity by using images taken with two cameras. The system includes a coordinate creating module, a census transform module, a delay XOR calculation module, a stereo matching module, and a control module. Accordingly, by using the system extensible for performing stereo matching, depth information of corrected images can be acquired in real-time without using computer systems or software programs for special purposes. Furthermore, since the system extensible for performing stereo matching can be simply realized by hardware, the system and the method of the present invention can be easily applied to actual intellectual-type robots, industrial settings, etc.
摘要翻译：公开了一种可扩展的系统和方法，用于实时地执行用于计算深度图像的立体声捕获，其结果是通过使用用两个相机拍摄的图像来搜索相似点。该系统包括坐标创建模块，普查变换模块，延迟XOR计算模块，立体匹配模块和控制模块。因此，通过使用可扩展的用于执行立体匹配的系统，可以实时获取校正图像的深度信息，而不用于特殊目的的计算机系统或软件程序。此外，由于用于执行立体匹配的可扩展的系统可以通过硬件简单地实现，所以本发明的系统和方法可以容易地应用于实际的智能机器人，工业设置等。

2. 发明授权

US08252661B2 Method of fabricating flash memory device 有权
标题翻译：制造闪存设备的方法
公开(公告)号：US08252661B2
公开(公告)日：2012-08-28
申请号：US12781777
申请日：2010-05-17
申请人： Sung Kee Park
发明人： Sung Kee Park
IPC分类号： H01L21/76
CPC分类号： H01L27/105 , G11C16/0408 , H01L27/11526 , H01L27/11531
摘要： A semiconductor device includes a semiconductor substrate having a cell region and a peripheral region. A cell array is defined within the cell region, the cell array having first, second, third, and fourth sides. A first decoder is defined within the peripheral region and provided adjacent to the first side of the cell array. A first isolation structure is formed at a first boundary region provided between the first side of the cell array and the peripheral region. A first active region is formed at a second boundary region that is provided between the second side of the cell array and the peripheral region. The first isolation structure has a first portion that has a first depth and a second portion that has a second depth.
摘要翻译：半导体器件包括具有单元区域和周边区域的半导体衬底。单元阵列定义在单元区域内，单元阵列具有第一，第二，第三和第四面。第一解码器被限定在外围区域内并且被提供为与单元阵列的第一侧相邻。在设置在电池阵列的第一侧和周边区域之间的第一边界区域处形成第一隔离结构。第一有源区形成在设置在电池阵列的第二侧和周边区域之间的第二边界区域。第一隔离结构具有具有第一深度的第一部分和具有第二深度的第二部分。

3. 发明授权

US08024072B2 Method for self-localization of robot based on object recognition and environment information around recognized object 有权
标题翻译：基于对象识别和识别对象周围环境信息的机器人自定位方法
公开(公告)号：US08024072B2
公开(公告)日：2011-09-20
申请号：US12292715
申请日：2008-11-25
申请人： Sung Kee Park , Soon Yong Park
发明人： Sung Kee Park , Soon Yong Park
IPC分类号： G05B15/00
CPC分类号： B25J19/023 , B25J5/00 , G01C21/00 , G05D1/0251 , G05D1/0274 , G06T7/80 , G06T2207/10021 , G06T2207/30252
摘要： A method for self-localization of a robot, the robot including a camera unit, a database storing a map around a robot traveling path, and a position arithmetic unit estimating the position of the robot, includes: acquiring an image around the robot, in the camera unit. Further, the method includes recognizing, in the position arithmetic unit, an individual object in the image acquired by the camera unit, to generate position values on a camera coordinate system of local feature points of the individual objects and local feature points of a surrounding environment including the individual objects; and estimating, in the position arithmetic unit, the position of the robot on the basis of the map and the position values on the camera coordinate system of local feature points of the individual objects and local feature points of a surrounding environment including the individual objects.
摘要翻译：一种机器人自身定位的方法，包括相机单元的机器人，存储机器人行进路径周围的地图的数据库以及估计机器人的位置的位置运算单元，包括：在机器人周围获取图像，相机单元。此外，该方法包括在位置运算单元中识别由相机单元获取的图像中的单个对象，以在相机坐标系上生成各个对象的局部特征点和周围环境的局部特征点的位置值包括个别物品; 以及在所述位置运算单元中，基于所述映射来估计所述机器人的位置，以及在包括所述各个对象的周围环境的各个对象和所述局部特征点的所述摄像机坐标系上的位置值。

4. 发明申请

US20090210092A1 Method for self-localization of robot based on object recognition and environment information around recognized object 有权
标题翻译：基于对象识别和识别对象周围环境信息的机器人自定位方法
公开(公告)号：US20090210092A1
公开(公告)日：2009-08-20
申请号：US12292715
申请日：2008-11-25
申请人： Sung Kee Park , Soon Yong Park
发明人： Sung Kee Park , Soon Yong Park
IPC分类号： B25J9/00 , B25J19/04
CPC分类号： B25J19/023 , B25J5/00 , G01C21/00 , G05D1/0251 , G05D1/0274 , G06T7/80 , G06T2207/10021 , G06T2207/30252
摘要： A method for self-localization of a robot, the robot including a camera unit, a database storing a map around a robot traveling path, and a position arithmetic unit estimating the position of the robot, includes: acquiring an image around the robot, in the camera unit. Further, the method includes recognizing, in the position arithmetic unit, an individual object in the image acquired by the camera unit, to generate position values on a camera coordinate system of local feature points of the individual objects and local feature points of a surrounding environment including the individual objects; and estimating, in the position arithmetic unit, the position of the robot on the basis of the map and the position values on the camera coordinate system of local feature points of the individual objects and local feature points of a surrounding environment including the individual objects.
摘要翻译：一种机器人自身定位的方法，包括相机单元的机器人，存储机器人行进路径周围的地图的数据库以及估计机器人的位置的位置运算单元，包括：在机器人周围获取图像，相机单元。此外，该方法包括在位置运算单元中识别由相机单元获取的图像中的单个对象，以在相机坐标系上生成各个对象的局部特征点和周围环境的局部特征点的位置值包括个别物品; 以及在所述位置运算单元中，基于所述映射来估计所述机器人的位置，以及在包括所述各个对象的周围环境的各个对象和所述局部特征点的所述摄像机坐标系上的位置值。

5. 发明授权

US06204125B1 Method of forming a gate in a stack gate flash EEPROM cell 有权
标题翻译：在堆叠栅极快速EEPROM单元中形成栅极的方法
公开(公告)号：US06204125B1
公开(公告)日：2001-03-20
申请号：US09605632
申请日：2000-06-28
申请人： Keun Woo Lee , Ki Seog Kim , Jin Shin , Sung Kee Park
发明人： Keun Woo Lee , Ki Seog Kim , Jin Shin , Sung Kee Park
IPC分类号： H01L218247
CPC分类号： H01L27/11521 , H01L21/28273
摘要： The present invention relates to a method of forming a gate in a stack gate flash EEPROM cell. In order to preventing a lateral bird's beak from occurring in an ONO dielectric layer during a reoxidation process to be performed after a formation of a cell gate having a stack structure formed by stacking a floating gate, an ONO dielectric layer and a control gate, an oxide layer and a nitride layer are sequentially formed on an entire structure before the reoxidation and after a formation of the cell gate. The oxide layer serves to reduce a stress in depositing the nitride layer, and the nitride layer serves to prevent an occurrence of the lateral bird's beak of the ONO dielectric layer during the reoxidation process. Accordingly, the present invention prevents the lateral bird's beak of the ONO dielectric layer, thereby improving a speed of cell erase operation.
摘要翻译：本发明涉及一种在堆叠栅极快闪EEPROM单元中形成栅极的方法。为了防止在形成具有通过堆叠浮栅，ONO电介质层和控制栅形成的堆叠结构的电池栅极的再氧化工艺期间在ONO电介质层中发生侧面鸟嘴，氧化层和氮化物层在再氧化之前和电池栅极形成之后的整个结构上依次形成。氧化物层用于减少沉积氮化物层的应力，并且氮化物层用于在再氧化过程期间防止ONO电介质层的侧面鸟喙的发生。因此，本发明能够防止ONO电介质层的横向鸟嘴，从而提高电池擦除操作的速度。

6. 发明授权

US08067838B2 Semiconductor device having pad structure for preventing and buffering stress of silicon nitride film 有权
标题翻译：具有用于防止和缓冲氮化硅膜的应力的衬垫结构的半导体器件
公开(公告)号：US08067838B2
公开(公告)日：2011-11-29
申请号：US11831595
申请日：2007-07-31
申请人： Sung Kee Park
发明人： Sung Kee Park
IPC分类号： H01L23/522
CPC分类号： H01L24/05 , H01L23/562 , H01L2224/0569 , H01L2924/01004 , H01L2924/01006 , H01L2924/01014 , H01L2924/01033 , H01L2924/01059 , H01L2924/01079 , H01L2924/05042 , H01L2924/30105 , H01L2924/351 , H01L2924/00
摘要： A semiconductor device having a pad structure for preventing a stress of a silicon nitride film. The semiconductor device includes a semiconductor substrate, a lower structure formed on the semiconductor substrate, a first insulation film formed on the lower structure, a first metal layer coupled to the lower structure through a first metal contact in the first insulation film, a second metal layer formed on the first metal layer, and a plurality of dummy gates having a concentric square structure formed at the lower portion of the pad region on the second metal layer.
摘要翻译：一种具有用于防止氮化硅膜的应力的焊盘结构的半导体器件。半导体器件包括半导体衬底，形成在半导体衬底上的下部结构，形成在下部结构上的第一绝缘膜，通过第一绝缘膜中的第一金属接触耦合到下部结构的第一金属层，第二金属形成在第一金属层上的多层虚拟栅极和形成在第二金属层上的焊盘区域的下部的同心方形结构的多个虚拟栅极。

7. 发明申请

US20100291750A1 METHOD OF FABRICATING FLASH MEMORY DEVICE 有权
标题翻译：制造闪存存储器件的方法
公开(公告)号：US20100291750A1
公开(公告)日：2010-11-18
申请号：US12781777
申请日：2010-05-17
申请人： Sung Kee Park
发明人： Sung Kee Park
IPC分类号： H01L21/762
CPC分类号： H01L27/105 , G11C16/0408 , H01L27/11526 , H01L27/11531
摘要： A semiconductor device includes a semiconductor substrate having a cell region and a peripheral region. A cell array is defined within the cell region, the cell array having first, second, third, and fourth sides. A first decoder is defined within the peripheral region and provided adjacent to the first side of the cell array. A first isolation structure is formed at a first boundary region provided between the first side of the cell array and the peripheral region. A first active region is formed at a second boundary region that is provided between the second side of the cell array and the peripheral region. The first isolation structure has a first portion that has a first depth and a second portion that has a second depth.
摘要翻译：半导体器件包括具有单元区域和周边区域的半导体衬底。单元阵列定义在单元区域内，单元阵列具有第一，第二，第三和第四面。第一解码器被限定在外围区域内并且被提供为与单元阵列的第一侧相邻。在设置在电池阵列的第一侧和周边区域之间的第一边界区域处形成第一隔离结构。第一有源区形成在设置在电池阵列的第二侧和周边区域之间的第二边界区域。第一隔离结构具有具有第一深度的第一部分和具有第二深度的第二部分。

8. 发明授权

US07705395B2 Flash memory cell and method of manufacturing the same and programming/erasing reading method of flash memory cell 失效
标题翻译：闪存单元及其制造方法和闪存单元的编程/擦除读取方法
公开(公告)号：US07705395B2
公开(公告)日：2010-04-27
申请号：US12247305
申请日：2008-10-08
申请人： Sung Kee Park , Young Seon You , Yong Wook Kim , Yoo Nam Jeon
发明人： Sung Kee Park , Young Seon You , Yong Wook Kim , Yoo Nam Jeon
IPC分类号： H01L29/788
CPC分类号： H01L27/11521 , G11C11/5628 , G11C11/5635 , G11C11/5642 , G11C16/0458 , G11C2211/5612 , H01L27/115 , H01L29/7887
摘要： Disclosed is a flash memory cell and method of manufacturing the same, and programming/erasing/reading method thereof. The flash memory cell comprises a first tunnel oxide film formed at a given region of a semiconductor substrate, a first floating gate formed on the first tunnel oxide film, a second tunnel oxide film formed over the semiconductor substrate and along one sidewall of the first floating gate, a second floating gate isolated from the first floating gate while contacting the second tunnel oxide film, a dielectric film formed on the first floating gate and the second floating gate, a control gate formed on the dielectric film, a first junction region formed in the semiconductor substrate below one side of the second tunnel oxide film, and a second junction region formed in the semiconductor substrate below one side of the first tunnel oxide film. Therefore, the present invention can implement 2-bit cell or 3-bit cell of a high density using the existing process technology. Further, it can reduce the manufacture cost and implement a high-integrated flash memory cell that is advantageous than a conventional flash memory cell in view of charge storage/retention as well as programming time.
摘要翻译：公开了一种闪存单元及其制造方法及其编程/擦除/读取方法。闪速存储单元包括形成在半导体衬底的给定区域的第一隧道氧化物膜，形成在第一隧道氧化物膜上的第一浮栅，形成在半导体衬底上并沿着第一浮置区的一个侧壁的第二隧道氧化膜栅极，与第一沟槽氧化膜接触时与第一浮栅隔离的第二浮栅;形成在第一浮栅和第二浮栅上的电介质膜，形成在电介质膜上的控制栅，位于第二隧道氧化膜的一侧以下的半导体衬底，以及形成在第一隧道氧化膜的一侧以下的半导体衬底中的第二结区。因此，本发明可以使用现有的工艺技术来实现高密度的2比特单元或3比特单元。此外，鉴于电荷存储/保持以及编程时间，它可以降低制造成本并实现比传统闪存单元有利的高集成闪存单元。

9. 发明授权

US07449400B2 Method of forming an isolation film in a semiconductor device 失效
标题翻译：在半导体器件中形成隔离膜的方法
公开(公告)号：US07449400B2
公开(公告)日：2008-11-11
申请号：US11155747
申请日：2005-06-20
申请人： Sung Kee Park
发明人： Sung Kee Park
IPC分类号： H01L21/425
CPC分类号： H01L21/76224 , H01L27/11526 , H01L27/11531
摘要： The present invention relates to an isolation film in a semiconductor device and method of forming the same. An isolation film is formed in a doped region of a peripheral region, in which the doped region is isolated from a deep well region of a cell region and the isolation film is thicker than an isolation film of the cell region so that a parasitic transistor is not generated and a leakage current can be prevented.
摘要翻译：本发明涉及一种半导体器件中的隔离膜及其制造方法。隔离膜形成在周边区域的掺杂区域中，其中掺杂区域与单元区域的深阱区域隔离，并且隔离膜比单元区域的隔离膜厚，使得寄生晶体管为不产生并且可以防止泄漏电流。

10. 发明申请

US20080037862A1 EXTENSIBLE SYSTEM AND METHOD FOR STEREO MATCHING IN REAL-TIME 有权
标题翻译：实时立体匹配的可扩展系统和方法
公开(公告)号：US20080037862A1
公开(公告)日：2008-02-14
申请号：US11678428
申请日：2007-02-23
申请人： Jae Wook Jeon , Seung Hun Jin , Jung Uk Cho , Sung Kee Park , Munsang Kim , Kyoung Mu Lee , Jong Eun Byun
发明人： Jae Wook Jeon , Seung Hun Jin , Jung Uk Cho , Sung Kee Park , Munsang Kim , Kyoung Mu Lee , Jong Eun Byun
IPC分类号： G06K9/00
CPC分类号： G06K9/32 , G06T7/593 , G06T2207/10021
摘要： Disclosed are a system and a method extensible for performing, in real-time, stereo snatching for calculating depth images with a result of searching for points of similarity by using images taken with two cameras. The system includes a coordinate creating module, a census transform module, a delay XOR calculation module, a stereo matching module, and a control module. Accordingly, by using the system extensible for performing stereo matching, depth information of corrected images can be acquired in real-time without using computer systems or software programs for special purposes. Furthermore, since the system extensible for performing stereo matching can be simply realized by hardware, the system and the method of the present invention can be easily applied to actual intellectual-type robots, industrial settings, etc.
摘要翻译：公开了一种可扩展的系统和方法，用于实时地执行用于计算深度图像的立体声捕获，其结果是通过使用用两个相机拍摄的图像来搜索相似点。该系统包括坐标创建模块，普查变换模块，延迟XOR计算模块，立体匹配模块和控制模块。因此，通过使用可扩展的用于执行立体匹配的系统，可以实时获取校正图像的深度信息，而不用于特殊目的的计算机系统或软件程序。此外，由于用于执行立体匹配的可扩展的系统可以通过硬件简单地实现，所以本发明的系统和方法可以容易地应用于实际的智能机器人，工业设置等。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式