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1. 发明授权

US07795181B2 Oxide high-temperature superconductor and its production method 有权
标题翻译：氧化物高温超导体及其制备方法
公开(公告)号：US07795181B2
公开(公告)日：2010-09-14
申请号：US10487415
申请日：2002-09-05
申请人： Sundaresan Athinarayanan , Hideo Ihara , Yoshiko Ihara, legal representative , Hideyo Ihara, legal representative , Hidetaka Ihara, legal representative , Gen-ei Ihara, legal representative , Chiaki Ihara, legal representative
发明人： Sundaresan Athinarayanan , Hideo Ihara
IPC分类号： H01L39/24
CPC分类号： H01L39/2461 , C30B23/02 , C30B29/22 , C30B29/225 , H01L39/2458 , Y10S505/782 , Y10S505/783
摘要： An oxide high temperature superconductor and method of making which includes a first buffer layer composed of CeO3 formed on a sapphire R (1, −1, 0, 2) face substrate for reducing lattice mismatch between the sapphire R (1, −1, 0, 2) face substrate and the oxide high temperature superconductor thin film, and a second buffer layer composed of such an oxide high temperature superconductor but in which Ba is substituted with Sr formed on the first buffer layer. The first buffer layer reduces the lattice mismatch between the sapphire R (1, −1, 0, 2) face substrate and the oxide high temperature superconductor thin, the second buffer layer prevents an interfacial reaction with Ba, thereby permitting the epitaxial growth of an oxide high temperature superconductor thin film that excels in both crystallographic integrity and crystallographic orientation.
摘要翻译：一种氧化物高温超导体及其制造方法，其包括由蓝宝石R（1，-1,0,2）面基板上形成的CeO 3构成的第一缓冲层，用于减少蓝宝石R（1，-1,0 ，2）正面基板和氧化物高温超导体薄膜，以及由这样的氧化物高温超导体构成的第二缓冲层，其中Ba被第一缓冲层上形成的Sr取代。第一缓冲层减少蓝宝石R（1，-1,0,2）面基片与氧化物高温超导薄层之间的晶格失配，第二缓冲层防止与Ba的界面反应，从而允许外延生长氧化物高温超导体薄膜，其结晶学完整性和晶体取向均优异。

2. 发明授权

US07335283B2 Production method for composite oxide thin film and device therefor and composite oxide film produced thereby 失效
标题翻译：复合氧化物薄膜的制造方法及其制造方法以及由此制造的复合氧化物膜
公开(公告)号：US07335283B2
公开(公告)日：2008-02-26
申请号：US10363050
申请日：2001-08-24
申请人： Yoshiko Ihara, legal representative , Hideyo Ihara, legal representative , Hidetaka Ihara, legal representative , Gen-ei Ihara, legal representative , Chiaki Ihara, legal representative , Sundaresan Athinarayanan , JiaCai Nie
发明人： Hideo Ihara
IPC分类号： C23C14/00
CPC分类号： H01L39/2435 , C04B35/45 , C04B35/4512 , C04B35/4521 , C04B2235/3201 , C04B2235/3206 , C04B2235/3208 , C04B2235/3213 , C04B2235/3215 , C04B2235/3217 , C04B2235/3232 , C04B2235/3239 , C04B2235/3241 , C04B2235/3244 , C04B2235/3251 , C04B2235/3256 , C04B2235/3258 , C04B2235/3262 , C04B2235/3272 , C04B2235/3275 , C04B2235/3279 , C04B2235/3286 , C04B2235/3287 , C04B2235/3289 , C04B2235/3293 , C04B2235/3296 , C04B2235/3409 , C04B2235/3418 , C30B23/002 , C30B23/02 , C30B29/22 , C30B29/225 , G11B11/10586 , H01L39/126
摘要： A method and an apparatus which permits making a composite oxide thin film excellent in crystallinity easily and at a low temperature, with the capability of controlling the basic unit cell structure as desired, and without the need for a post annealing, as well as a composite oxide thin film thereby, especially a Cu group high temperature superconducting thin film, are disclosed. A thin Cu group high temperature superconducting film, which is constituted of a charge supply block (1) and a superconducting block (2), is formed on a substrate by alternately sputtering from a sputtering target having a composition of the charge supply block (1) and a sputtering target having a composition of the superconducting block (2) and repeating such an alternate sputtering operation a number of times needed for the film to reach a desired thickness. The first sputtering target for the charge supply block has a charge supply block composition in which Cu atoms are partly substituted with atoms of an element having a structure stabilizing effect.
摘要翻译：能够容易地和在低温下制造结晶性优异的复合氧化物薄膜的方法和装置，具有根据需要控制基本晶胞结构的能力，并且不需要后退火，以及复合材料氧化物薄膜，特别是Cu组高温超导薄膜。通过从具有电荷供给块（1）的组成的溅射靶交替溅射，在基板上形成由电荷供给块（1）和超导块（2）构成的薄Cu组高温超导膜）和具有超导块（2）的组成的溅射靶，并重复这样的交替溅射操作，使膜达到所需厚度所需的次数。用于电荷供应块的第一溅射靶具有电荷供应块组成，其中Cu原子被具有结构稳定作用的元素的原子部分取代。

3. 发明授权

US07491678B2 Superconducting thin film having columnar pin retaining center using nano-dots 失效
标题翻译：具有使用纳米点的柱状销保持中心的超导薄膜
公开(公告)号：US07491678B2
公开(公告)日：2009-02-17
申请号：US10480942
申请日：2002-06-17
申请人： Ioan Adrian Crisan , Yoshiko Ihara, legal representative , Hideyo Ihara, legal representative , Hidetaka Ihara, legal representative , Gen-ei Ihara, legal representative , Chiaki Ihara, legal representative
发明人： Hideo Ihara
IPC分类号： H01L39/12 , H01B12/00 , B05D5/12
CPC分类号： H01L39/2483 , Y10T428/24612
摘要： A superconducting thin film is disclosed having columnar pinning centers utilizing nano dots, and comprising nano dots (3) which are formed insularly on a substrate (2) and three-dimensionally in shape and composed of a material other than a superconducting material and also other than a material of which the substrate is formed, columnar defects (4) composed of the superconducting material and grown on the nano dots (3), respectively, a lattice defect (6) formed on a said columnar defect (4), and a thin film of the superconducting material (5) formed in those areas on the substrate which are other than those where said columnar defects are formed. The superconducting thin film is prepared by depositing the material other than the superconducting material on the substrate (2) while controlling the substrate temperature, the rate of deposition of the material and the film thickness of the material deposited so to coagulate the deposited material to form the nano dots (3), and then growing a thin film of the superconducting material (5) on the substrate (2). An improved superconducting this film is thus provided which regardless of its type is at least ten times higher in critical current density than an exiting superconducting thin film, and which can also be manufactured at a low cost. And, being large in critical superconducting current density and critical superconducting magnetic field, it is advantageously applicable to the technical fields of cryogenic electronics and microwaves.
摘要翻译：公开了一种使用纳米点的柱状钉扎中心的超导薄膜，并且包括在基片（2）上分别形成并三维形状并由超导材料以外的材料构成的纳米点（3）除了形成基板的材料之外，分别由超导材料构成并在纳米点（3）上生长的柱状缺陷（4）形成在所述柱状缺陷（4）上的晶格缺陷（6），以及在基板上形成的那些区域中形成的超导材料（5）的薄膜不同于形成所述柱状缺陷的区域。通过在衬底（2）上沉积超导材料以外的材料，同时控制衬底温度，材料的沉积速率和沉积的材料的膜厚度以使沉积的材料凝固形成超导薄膜纳米点（3），然后在衬底（2）上生长超导材料（5）的薄膜。因此，提供了这种膜的改进的超导，其与其离型超导薄膜的临界电流密度相比其类型至少高十倍，并且也可以以低成本制造。而且，在临界超导电流密度和临界超导磁场范围较大的情况下，它有利于低温电子和微波的技术领域。

4. 发明授权

US5919735A High temperature superconductor 失效
标题翻译：高温超导体
公开(公告)号：US5919735A
公开(公告)日：1999-07-06
申请号：US548975
申请日：1995-10-27
申请人： Hideo Ihara , Akira Iyo
发明人： Hideo Ihara , Akira Iyo
IPC分类号： C04B35/45 , H01L39/12
CPC分类号： C04B35/45 , H01L39/126 , Y10S505/731 , Y10S505/732 , Y10S505/776 , Y10S505/783 , Y10S505/816
摘要： A high temperature superconductor which has a layered crystal structure, which has a superconducting transition temperature, Tc, of 110 K or more, and which has a composition expressed by:Cu.sub.1-z M'.sub.z Ae.sub.2 Ca.sub.x-1 Cu.sub.x O.sub.y,where M' is at least one element selected from the group consisting of (a) trivalent ions of Tl, and (b) polyvalent ions of Mo, W, and Re,where Ae is at least one of Ba and Sr,where x ranges from 1 to 10,where y ranges from 2x+1 to 2x+4, andwhere z ranges from 0
摘要翻译：具有层状晶体结构的高温超导体，其具有110K以上的超导转变温度Tc，其具有由以下组成表示的组成：Cu1-zM'zAe2Cax-1CuxOy，其中M'为至少一种元素选自（a）T1的三价离子和（b）Mo，W和Re的多价离子，其中Ae是Ba和Sr中的至少一种，其中x的范围为1至10，其中y范围从2x + 1至2x + 4，并且其中z的范围为0

5. 发明授权

US5455224A Method of producing compound oxide superconducting thin film 失效
标题翻译：复合氧化物超导薄膜的制备方法
公开(公告)号：US5455224A
公开(公告)日：1995-10-03
申请号：US217098
申请日：1994-03-24
申请人： Hiroko Kaneko , Keiji Kaneko , Hideo Ihara , Akira Negishi , Shoji Ishibashi
发明人： Hiroko Kaneko , Keiji Kaneko , Hideo Ihara , Akira Negishi , Shoji Ishibashi
IPC分类号： C01G1/00 , C01B13/14 , C01G3/00 , C25D9/04 , C25D11/00 , C25D11/02 , C25D11/34 , C30B29/22 , H01L39/24
CPC分类号： H01L39/2422
摘要： A method for producing a compound oxide superconducting thin film, comprising forming an oxide thin film on the surface of a substrate of a first metal element having a redox charge by oxidizing the metal, using the oxide thin film thus formed as an electrode for oxidation reaction of a second metal element contained in an electrolyte solution or molten salt to incorporate the second metal element in the oxide thin film, using the compound oxide thin film thus formed as an electrode to obtain a cyclic voltammogram, and electrochemically processing the compound oxide thin film at an electrolytic potential that is determined based on the cyclic voltammogram.
摘要翻译：一种复合氧化物超导薄膜的制造方法，其特征在于，使用由此形成的氧化物薄膜作为氧化反应的电极，通过氧化金属，在具有氧化还原电荷的第一金属元素的基板的表面上形成氧化物薄膜使用包含在电解质溶液或熔融盐中的第二金属元素以将第二金属元素并入氧化物薄膜中，使用如此形成的复合氧化物薄膜作为电极以获得循环伏安图，并且对化合物氧化物薄膜进行电化学处理在基于循环伏安图确定的电解电位下。

6. 发明授权

US06605569B2 Mg-doped high-temperature superconductor having low superconducting anisotropy and method for producing the superconductor 失效
标题翻译：具有低超导各向异性的掺杂Mg的高温超导体和制造超导体的方法
公开(公告)号：US06605569B2
公开(公告)日：2003-08-12
申请号：US09870465
申请日：2001-06-01
申请人： Hideo Ihara , Shyam Kishore Agarwal
发明人： Hideo Ihara , Shyam Kishore Agarwal
IPC分类号： H01B1200
CPC分类号： H01L39/126 , Y10S505/776 , Y10S505/779
摘要： A Mg-doped high-temperature superconductor having low superconducting anisotropy includes a two-dimensional layered structure constituted by a charge reservoir layer and a superconducting layer, wherein some or all atoms constituting the charge reservoir layer are Cu and O atoms, metallizing or rendering the charge reservoir layer superconducting, a portion of the Ca of the CunCan+1O2n constituting the superconducting layer is replaced by Mg, increasing superconductive coupling between CuO2 layers, a thickness of the superconducting layer is increased, and therefore coherence length in a thickness direction is increased based on the uncertainty principle, lowering superconducting anisotropy.
摘要翻译：具有低超导各向异性的Mg掺杂的高温超导体包括由电荷储存层和超导层构成的二维分层结构，其中构成电荷储存层的一些或全部原子是Cu和O原子，金属化或呈现电荷储存层超导，构成超导层的CunCan + 1O2n的Ca的一部分被Mg代替，增加CuO 2层之间的超导耦合，增加了超导层的厚度，因此增加了厚度方向的相干长度基于不确定性原理，降低了超导各向异性。

7. 发明授权

US06281171B1 MG-doped high-temperature superconductor having the superconducting anisotropy and method for producing the superconductor 失效
标题翻译：具有低超导各向异性的MG掺杂的高温超导体和用于制造超导体的方法
公开(公告)号：US06281171B1
公开(公告)日：2001-08-28
申请号：US09270682
申请日：1999-03-16
申请人： Hideo Ihara , Shyam Kishore Agarwal
发明人： Hideo Ihara , Shyam Kishore Agarwal
IPC分类号： C04B3504
CPC分类号： H01L39/126 , Y10S505/776 , Y10S505/779
摘要： A Mg-doped high-temperature superconductor having low superconducting anisotropy includes a two-dimensional layered structure constituted by a charge reservoir layer and a superconducting layer, wherein some or all atoms constituting the charge reservoir layer are Cu and O atoms, metallizing or rendering the charge reservoir layer superconducting, a portion of the Ca of the CunCan−1O2n constituting the superconducting layer is replaced by Mg, increasing superconductive coupling between CuO2 layers, a thickness of the superconducting layer is increased, and therefore coherence length in a thickness direction is increased based on the uncertainty principle, lowering superconducting anisotropy.
摘要翻译：具有低超导各向异性的Mg掺杂的高温超导体包括由电荷储存层和超导层构成的二维分层结构，其中构成电荷储存层的一些或全部原子是Cu和O原子，金属化或呈现电荷储存层超导，构成超导层的CunCan-1O2n的Ca的一部分被Mg代替，增加CuO 2层之间的超导耦合，增加了超导层的厚度，因此增加了厚度方向上的相干长度基于不确定性原理，降低了超导各向异性。

8. 发明申请

US20090048113A1 Superconducting thin film having columnar pinning centers utilizing nano dots and method of making the same 审中-公开
标题翻译：具有使用纳米点的柱状钉扎中心的超导薄膜及其制造方法
公开(公告)号：US20090048113A1
公开(公告)日：2009-02-19
申请号：US12285593
申请日：2008-10-09
申请人： Ioan Adrian Crisan , Hideo Ihara , Yoshiko Ihara , Hideyo Ihara , Hidetaka Ihara , Gen-ei Ihara , Chiaki Ihara
发明人： Ioan Adrian Crisan , Hideo Ihara , Yoshiko Ihara , Hideyo Ihara , Hidetaka Ihara , Gen-ei Ihara , Chiaki Ihara
IPC分类号： H01L39/02 , H01L39/24
CPC分类号： H01L39/2483 , Y10T428/24612
摘要： A superconducting thin film is disclosed having columnar pinning centers utilizing nano dots, and comprising nano dots (3) which are formed insularly on a substrate (2) and three-dimensionally in shape and composed of a material other than a superconducting material and also other than a material of which the substrate is formed, columnar defects (4) composed of the superconducting material and grown on the nano dots (3), respectively, a lattice defect (6) formed on a said columnar defect (4), and a thin film of the superconducting material (5) formed in those areas on the substrate which are other than those where said columnar defects are formed. The superconducting thin film (5) is prepared by depositing the material other than the superconducting material on the substrate (2) while controlling the substrate (2) temperature, and the film thickness of the material deposited so to coagulate the deposited material to form the nano dots (3), and then growing a thin film of the superconducting material (5) on the substrate (2). An improved superconducting thin film is thus provided which regardless of its type is at least ten times higher in critical current density than an exiting superconducting thin film, and which can also be manufactured at a low cost. And, being large in critical superconducting current density and critical superconducting magnetic field, it is advantageously applicable to the technical fields of cryogenic electronics and microwaves.
摘要翻译：公开了一种使用纳米点的柱状钉扎中心的超导薄膜，并且包括在基片（2）上分别形成并三维形状并由超导材料以外的材料构成的纳米点（3）除了形成基板的材料之外，分别由超导材料构成并在纳米点（3）上生长的柱状缺陷（4）形成在所述柱状缺陷（4）上的晶格缺陷（6），以及在基板上形成的那些区域中形成的超导材料（5）的薄膜不同于形成所述柱状缺陷的区域。超导薄膜（5）通过将超导材料以外的材料沉积在衬底（2）上同时控制衬底（2）的温度和沉积的材料的膜厚度使沉积的材料凝结而形成纳米点（3），然后在衬底（2）上生长超导材料（5）的薄膜。因此，提供了一种改进的超导薄膜，其与其离型超导薄膜的临界电流密度相比其类型至少高十倍，并且也可以以低成本制造。而且，在临界超导电流密度和临界超导磁场范围较大的情况下，它有利于低温电子和微波的技术领域。

9. 发明授权

US5344779A Method for production of standard oxide sample for X-ray fluorescence spectrometry 失效
标题翻译： X射线荧光光谱法生产标准氧化物样品的方法
公开(公告)号：US5344779A
公开(公告)日：1994-09-06
申请号：US035211
申请日：1993-03-22
申请人： Keiji Kaneko , Masayuki Hirabayashi , Hideo Ihara , Hiroko Kaneko
发明人： Keiji Kaneko , Masayuki Hirabayashi , Hideo Ihara , Hiroko Kaneko
IPC分类号： G01N1/00 , G01N23/22 , G01N23/223 , G01N33/20
CPC分类号： G01N23/2202 , Y10T436/10 , Y10T436/109163
摘要： A method for the production of a standard oxide sample for X-ray fluorescence analysis of an impurity element contained in an inorganic compound. The standard oxide sample is produced by accurately weighing a high-purity compound of the type of the main-component element of the inorganic compound, dissolving the weighed compound in an acid, adding an element of the type of the impurity element to be subjected to determination in a prescribed amount to the acid solution, evaporating the resultant solution to dryness, and heating the dry residue of evaporation.
摘要翻译：制备用于对无机化合物中含有的杂质元素进行X射线荧光分析的标准氧化物样品的方法。标准氧化物样品通过精确称量无机化合物的主要组分元素类型的高纯度化合物，将称重的化合物溶解在酸中，加入要经受的杂质元素的元素，对酸溶液进行规定量的测定，将所得溶液蒸发至干，并加热干燥的蒸发残余物。

10. 发明授权

US5112783A Conductive copper oxide ceramics and process for producing same 失效
标题翻译：导电铜氧化物陶瓷及其制造方法
公开(公告)号：US5112783A
公开(公告)日：1992-05-12
申请号：US639931
申请日：1991-01-14
申请人： Ryoji Sugise , Hiroshi Daimon , Itsuhiro Fujii , Hideo Ihara , Norio Terada , Masatoshi Jo , Masayuki Hirabayashi
发明人： Ryoji Sugise , Hiroshi Daimon , Itsuhiro Fujii , Hideo Ihara , Norio Terada , Masatoshi Jo , Masayuki Hirabayashi
IPC分类号： C01G3/00 , C01G15/00 , C04B35/45 , H01B1/08 , H01M4/90
CPC分类号： H01M4/9016 , C01G15/006 , C01G3/006 , C04B35/45 , H01B1/08 , C01P2002/72 , C01P2002/76 , C01P2002/82
摘要： Cubic conductive copper oxide ceramics which are represented by the following formula I:(M.sub.x Cu.sub.y).sub.7 O.sub.z A.sub.w Iwherein M represents at least one element selected from the group consisting of In, Sc, Y, Tl, and Ga, A represents Cl, NO.sub.3, or Cl and NO.sub.3, x+Y is a value of 1, x/y is a number of 0 to 10, z is a number of from 6 to 8, and w is a number of from 1 to 9, and processes for producing same by mixing at least one nitrate and/or chloride of a metal selected from the group consisting of In, Sc, Y, Tl, and Ga, with copper nitrate and/or copper chloride, and firing the mixture at from 200.degree. to 600.degree. C. The copper oxide ceramics are preferably used as electrodes in various fields, heat emiters and also as a material for producing superconductors.
摘要翻译：由下式I表示的立方导电铜氧化物陶瓷：（MxCuy）7OzAw I其中M表示选自In，Sc，Y，Tl和Ga中的至少一种元素，A表示Cl，NO 3或 Cl和NO 3，x + Y为1，x / y为0〜10的数，z为6〜8的数，w为1〜9的数，其制造方法通过将选自In，Sc，Y，Tl和Ga的金属的至少一种硝酸盐和/或氯化物与硝酸铜和/或氯化铜混合，并将混合物在200〜600℃ 铜氧化物陶瓷优选用作各种领域的电极，发热体以及用作制造超导体的材料。

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