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1. 发明授权

US5919735A High temperature superconductor 失效
标题翻译：高温超导体
公开(公告)号：US5919735A
公开(公告)日：1999-07-06
申请号：US548975
申请日：1995-10-27
申请人： Hideo Ihara , Akira Iyo
发明人： Hideo Ihara , Akira Iyo
IPC分类号： C04B35/45 , H01L39/12
CPC分类号： C04B35/45 , H01L39/126 , Y10S505/731 , Y10S505/732 , Y10S505/776 , Y10S505/783 , Y10S505/816
摘要： A high temperature superconductor which has a layered crystal structure, which has a superconducting transition temperature, Tc, of 110 K or more, and which has a composition expressed by:Cu.sub.1-z M'.sub.z Ae.sub.2 Ca.sub.x-1 Cu.sub.x O.sub.y,where M' is at least one element selected from the group consisting of (a) trivalent ions of Tl, and (b) polyvalent ions of Mo, W, and Re,where Ae is at least one of Ba and Sr,where x ranges from 1 to 10,where y ranges from 2x+1 to 2x+4, andwhere z ranges from 0
摘要翻译：具有层状晶体结构的高温超导体，其具有110K以上的超导转变温度Tc，其具有由以下组成表示的组成：Cu1-zM'zAe2Cax-1CuxOy，其中M'为至少一种元素选自（a）T1的三价离子和（b）Mo，W和Re的多价离子，其中Ae是Ba和Sr中的至少一种，其中x的范围为1至10，其中y范围从2x + 1至2x + 4，并且其中z的范围为0

2. 发明授权

US06218341B1 Process for the preparation of a high temperature superconductor 失效
标题翻译：制备高温超导体的工艺
公开(公告)号：US06218341B1
公开(公告)日：2001-04-17
申请号：US09325737
申请日：1999-06-04
申请人： Hideo Ihara , Masayuki Hirabayashi , Akira Iyo
发明人： Hideo Ihara , Masayuki Hirabayashi , Akira Iyo
IPC分类号： H01L3924
CPC分类号： C04B35/45 , H01L39/126 , Y10S505/731 , Y10S505/732 , Y10S505/776 , Y10S505/783 , Y10S505/816
摘要： A process for preparing a superconductor which is a low anisotropy, high temperature superconductor, includes providing a target in molded form comprised of one of the superconductor or constituent elements of the superconductor, the superconductor having a layered crystal structure, having a superconducting transition temperature, Tc, of 110 K or more, and having a composition expressed by Cu1−zMzAe2Cax−1CuxOy where M is at least one member selected from the group consisting of (a) a trivalent ion of Tl, and (b) polyvalent ions of Mo, W, and Re, Ae is at least one of Ba and Sr, x ranges from 1 to 10, and y ranges from 2x+1 to 2x+4, and z ranges from 0
摘要翻译：一种制备低各向异性高温超导体的超导体的方法包括提供由超导体的超导体或构成元素之一构成的成型体的靶，超导体具有层状晶体结构，具有超导转变温度， Tc为110K以上，具有由Cu1-zMzAe2Cax-1CuxOy表示的组成，其中M为选自（a）T 1的三价离子和（b）Mo的多价离子中的至少一种， W和Re，Ae是Ba和Sr中的至少一种，x的范围为1至10，y的范围为2×+ 1至2×+ 4，z的范围为0

3. 发明授权

US5455224A Method of producing compound oxide superconducting thin film 失效
标题翻译：复合氧化物超导薄膜的制备方法
公开(公告)号：US5455224A
公开(公告)日：1995-10-03
申请号：US217098
申请日：1994-03-24
申请人： Hiroko Kaneko , Keiji Kaneko , Hideo Ihara , Akira Negishi , Shoji Ishibashi
发明人： Hiroko Kaneko , Keiji Kaneko , Hideo Ihara , Akira Negishi , Shoji Ishibashi
IPC分类号： C01G1/00 , C01B13/14 , C01G3/00 , C25D9/04 , C25D11/00 , C25D11/02 , C25D11/34 , C30B29/22 , H01L39/24
CPC分类号： H01L39/2422
摘要： A method for producing a compound oxide superconducting thin film, comprising forming an oxide thin film on the surface of a substrate of a first metal element having a redox charge by oxidizing the metal, using the oxide thin film thus formed as an electrode for oxidation reaction of a second metal element contained in an electrolyte solution or molten salt to incorporate the second metal element in the oxide thin film, using the compound oxide thin film thus formed as an electrode to obtain a cyclic voltammogram, and electrochemically processing the compound oxide thin film at an electrolytic potential that is determined based on the cyclic voltammogram.
摘要翻译：一种复合氧化物超导薄膜的制造方法，其特征在于，使用由此形成的氧化物薄膜作为氧化反应的电极，通过氧化金属，在具有氧化还原电荷的第一金属元素的基板的表面上形成氧化物薄膜使用包含在电解质溶液或熔融盐中的第二金属元素以将第二金属元素并入氧化物薄膜中，使用如此形成的复合氧化物薄膜作为电极以获得循环伏安图，并且对化合物氧化物薄膜进行电化学处理在基于循环伏安图确定的电解电位下。

4. 发明授权

US06605569B2 Mg-doped high-temperature superconductor having low superconducting anisotropy and method for producing the superconductor 失效
标题翻译：具有低超导各向异性的掺杂Mg的高温超导体和制造超导体的方法
公开(公告)号：US06605569B2
公开(公告)日：2003-08-12
申请号：US09870465
申请日：2001-06-01
申请人： Hideo Ihara , Shyam Kishore Agarwal
发明人： Hideo Ihara , Shyam Kishore Agarwal
IPC分类号： H01B1200
CPC分类号： H01L39/126 , Y10S505/776 , Y10S505/779
摘要： A Mg-doped high-temperature superconductor having low superconducting anisotropy includes a two-dimensional layered structure constituted by a charge reservoir layer and a superconducting layer, wherein some or all atoms constituting the charge reservoir layer are Cu and O atoms, metallizing or rendering the charge reservoir layer superconducting, a portion of the Ca of the CunCan+1O2n constituting the superconducting layer is replaced by Mg, increasing superconductive coupling between CuO2 layers, a thickness of the superconducting layer is increased, and therefore coherence length in a thickness direction is increased based on the uncertainty principle, lowering superconducting anisotropy.
摘要翻译：具有低超导各向异性的Mg掺杂的高温超导体包括由电荷储存层和超导层构成的二维分层结构，其中构成电荷储存层的一些或全部原子是Cu和O原子，金属化或呈现电荷储存层超导，构成超导层的CunCan + 1O2n的Ca的一部分被Mg代替，增加CuO 2层之间的超导耦合，增加了超导层的厚度，因此增加了厚度方向的相干长度基于不确定性原理，降低了超导各向异性。

5. 发明授权

US06281171B1 MG-doped high-temperature superconductor having the superconducting anisotropy and method for producing the superconductor 失效
标题翻译：具有低超导各向异性的MG掺杂的高温超导体和用于制造超导体的方法
公开(公告)号：US06281171B1
公开(公告)日：2001-08-28
申请号：US09270682
申请日：1999-03-16
申请人： Hideo Ihara , Shyam Kishore Agarwal
发明人： Hideo Ihara , Shyam Kishore Agarwal
IPC分类号： C04B3504
CPC分类号： H01L39/126 , Y10S505/776 , Y10S505/779
摘要： A Mg-doped high-temperature superconductor having low superconducting anisotropy includes a two-dimensional layered structure constituted by a charge reservoir layer and a superconducting layer, wherein some or all atoms constituting the charge reservoir layer are Cu and O atoms, metallizing or rendering the charge reservoir layer superconducting, a portion of the Ca of the CunCan−1O2n constituting the superconducting layer is replaced by Mg, increasing superconductive coupling between CuO2 layers, a thickness of the superconducting layer is increased, and therefore coherence length in a thickness direction is increased based on the uncertainty principle, lowering superconducting anisotropy.
摘要翻译：具有低超导各向异性的Mg掺杂的高温超导体包括由电荷储存层和超导层构成的二维分层结构，其中构成电荷储存层的一些或全部原子是Cu和O原子，金属化或呈现电荷储存层超导，构成超导层的CunCan-1O2n的Ca的一部分被Mg代替，增加CuO 2层之间的超导耦合，增加了超导层的厚度，因此增加了厚度方向上的相干长度基于不确定性原理，降低了超导各向异性。

6. 发明授权

US07795181B2 Oxide high-temperature superconductor and its production method 有权
标题翻译：氧化物高温超导体及其制备方法
公开(公告)号：US07795181B2
公开(公告)日：2010-09-14
申请号：US10487415
申请日：2002-09-05
申请人： Sundaresan Athinarayanan , Hideo Ihara , Yoshiko Ihara, legal representative , Hideyo Ihara, legal representative , Hidetaka Ihara, legal representative , Gen-ei Ihara, legal representative , Chiaki Ihara, legal representative
发明人： Sundaresan Athinarayanan , Hideo Ihara
IPC分类号： H01L39/24
CPC分类号： H01L39/2461 , C30B23/02 , C30B29/22 , C30B29/225 , H01L39/2458 , Y10S505/782 , Y10S505/783
摘要： An oxide high temperature superconductor and method of making which includes a first buffer layer composed of CeO3 formed on a sapphire R (1, −1, 0, 2) face substrate for reducing lattice mismatch between the sapphire R (1, −1, 0, 2) face substrate and the oxide high temperature superconductor thin film, and a second buffer layer composed of such an oxide high temperature superconductor but in which Ba is substituted with Sr formed on the first buffer layer. The first buffer layer reduces the lattice mismatch between the sapphire R (1, −1, 0, 2) face substrate and the oxide high temperature superconductor thin, the second buffer layer prevents an interfacial reaction with Ba, thereby permitting the epitaxial growth of an oxide high temperature superconductor thin film that excels in both crystallographic integrity and crystallographic orientation.
摘要翻译：一种氧化物高温超导体及其制造方法，其包括由蓝宝石R（1，-1,0,2）面基板上形成的CeO 3构成的第一缓冲层，用于减少蓝宝石R（1，-1,0 ，2）正面基板和氧化物高温超导体薄膜，以及由这样的氧化物高温超导体构成的第二缓冲层，其中Ba被第一缓冲层上形成的Sr取代。第一缓冲层减少蓝宝石R（1，-1,0,2）面基片与氧化物高温超导薄层之间的晶格失配，第二缓冲层防止与Ba的界面反应，从而允许外延生长氧化物高温超导体薄膜，其结晶学完整性和晶体取向均优异。

7. 发明申请

US20090048113A1 Superconducting thin film having columnar pinning centers utilizing nano dots and method of making the same 审中-公开
标题翻译：具有使用纳米点的柱状钉扎中心的超导薄膜及其制造方法
公开(公告)号：US20090048113A1
公开(公告)日：2009-02-19
申请号：US12285593
申请日：2008-10-09
申请人： Ioan Adrian Crisan , Hideo Ihara , Yoshiko Ihara , Hideyo Ihara , Hidetaka Ihara , Gen-ei Ihara , Chiaki Ihara
发明人： Ioan Adrian Crisan , Hideo Ihara , Yoshiko Ihara , Hideyo Ihara , Hidetaka Ihara , Gen-ei Ihara , Chiaki Ihara
IPC分类号： H01L39/02 , H01L39/24
CPC分类号： H01L39/2483 , Y10T428/24612
摘要： A superconducting thin film is disclosed having columnar pinning centers utilizing nano dots, and comprising nano dots (3) which are formed insularly on a substrate (2) and three-dimensionally in shape and composed of a material other than a superconducting material and also other than a material of which the substrate is formed, columnar defects (4) composed of the superconducting material and grown on the nano dots (3), respectively, a lattice defect (6) formed on a said columnar defect (4), and a thin film of the superconducting material (5) formed in those areas on the substrate which are other than those where said columnar defects are formed. The superconducting thin film (5) is prepared by depositing the material other than the superconducting material on the substrate (2) while controlling the substrate (2) temperature, and the film thickness of the material deposited so to coagulate the deposited material to form the nano dots (3), and then growing a thin film of the superconducting material (5) on the substrate (2). An improved superconducting thin film is thus provided which regardless of its type is at least ten times higher in critical current density than an exiting superconducting thin film, and which can also be manufactured at a low cost. And, being large in critical superconducting current density and critical superconducting magnetic field, it is advantageously applicable to the technical fields of cryogenic electronics and microwaves.
摘要翻译：公开了一种使用纳米点的柱状钉扎中心的超导薄膜，并且包括在基片（2）上分别形成并三维形状并由超导材料以外的材料构成的纳米点（3）除了形成基板的材料之外，分别由超导材料构成并在纳米点（3）上生长的柱状缺陷（4）形成在所述柱状缺陷（4）上的晶格缺陷（6），以及在基板上形成的那些区域中形成的超导材料（5）的薄膜不同于形成所述柱状缺陷的区域。超导薄膜（5）通过将超导材料以外的材料沉积在衬底（2）上同时控制衬底（2）的温度和沉积的材料的膜厚度使沉积的材料凝结而形成纳米点（3），然后在衬底（2）上生长超导材料（5）的薄膜。因此，提供了一种改进的超导薄膜，其与其离型超导薄膜的临界电流密度相比其类型至少高十倍，并且也可以以低成本制造。而且，在临界超导电流密度和临界超导磁场范围较大的情况下，它有利于低温电子和微波的技术领域。

8. 发明授权

US5344779A Method for production of standard oxide sample for X-ray fluorescence spectrometry 失效
标题翻译： X射线荧光光谱法生产标准氧化物样品的方法
公开(公告)号：US5344779A
公开(公告)日：1994-09-06
申请号：US035211
申请日：1993-03-22
申请人： Keiji Kaneko , Masayuki Hirabayashi , Hideo Ihara , Hiroko Kaneko
发明人： Keiji Kaneko , Masayuki Hirabayashi , Hideo Ihara , Hiroko Kaneko
IPC分类号： G01N1/00 , G01N23/22 , G01N23/223 , G01N33/20
CPC分类号： G01N23/2202 , Y10T436/10 , Y10T436/109163
摘要： A method for the production of a standard oxide sample for X-ray fluorescence analysis of an impurity element contained in an inorganic compound. The standard oxide sample is produced by accurately weighing a high-purity compound of the type of the main-component element of the inorganic compound, dissolving the weighed compound in an acid, adding an element of the type of the impurity element to be subjected to determination in a prescribed amount to the acid solution, evaporating the resultant solution to dryness, and heating the dry residue of evaporation.
摘要翻译：制备用于对无机化合物中含有的杂质元素进行X射线荧光分析的标准氧化物样品的方法。标准氧化物样品通过精确称量无机化合物的主要组分元素类型的高纯度化合物，将称重的化合物溶解在酸中，加入要经受的杂质元素的元素，对酸溶液进行规定量的测定，将所得溶液蒸发至干，并加热干燥的蒸发残余物。

9. 发明授权

US5112783A Conductive copper oxide ceramics and process for producing same 失效
标题翻译：导电铜氧化物陶瓷及其制造方法
公开(公告)号：US5112783A
公开(公告)日：1992-05-12
申请号：US639931
申请日：1991-01-14
申请人： Ryoji Sugise , Hiroshi Daimon , Itsuhiro Fujii , Hideo Ihara , Norio Terada , Masatoshi Jo , Masayuki Hirabayashi
发明人： Ryoji Sugise , Hiroshi Daimon , Itsuhiro Fujii , Hideo Ihara , Norio Terada , Masatoshi Jo , Masayuki Hirabayashi
IPC分类号： C01G3/00 , C01G15/00 , C04B35/45 , H01B1/08 , H01M4/90
CPC分类号： H01M4/9016 , C01G15/006 , C01G3/006 , C04B35/45 , H01B1/08 , C01P2002/72 , C01P2002/76 , C01P2002/82
摘要： Cubic conductive copper oxide ceramics which are represented by the following formula I:(M.sub.x Cu.sub.y).sub.7 O.sub.z A.sub.w Iwherein M represents at least one element selected from the group consisting of In, Sc, Y, Tl, and Ga, A represents Cl, NO.sub.3, or Cl and NO.sub.3, x+Y is a value of 1, x/y is a number of 0 to 10, z is a number of from 6 to 8, and w is a number of from 1 to 9, and processes for producing same by mixing at least one nitrate and/or chloride of a metal selected from the group consisting of In, Sc, Y, Tl, and Ga, with copper nitrate and/or copper chloride, and firing the mixture at from 200.degree. to 600.degree. C. The copper oxide ceramics are preferably used as electrodes in various fields, heat emiters and also as a material for producing superconductors.
摘要翻译：由下式I表示的立方导电铜氧化物陶瓷：（MxCuy）7OzAw I其中M表示选自In，Sc，Y，Tl和Ga中的至少一种元素，A表示Cl，NO 3或 Cl和NO 3，x + Y为1，x / y为0〜10的数，z为6〜8的数，w为1〜9的数，其制造方法通过将选自In，Sc，Y，Tl和Ga的金属的至少一种硝酸盐和/或氯化物与硝酸铜和/或氯化铜混合，并将混合物在200〜600℃ 铜氧化物陶瓷优选用作各种领域的电极，发热体以及用作制造超导体的材料。

10. 发明授权

US06767866B1 Selective reduction type high temperature superconductor and methods of making the same 失效
标题翻译：选择性还原型高温超导体及其制造方法
公开(公告)号：US06767866B1
公开(公告)日：2004-07-27
申请号：US09926228
申请日：2001-09-26
申请人： Hideo Ihara
发明人： Hideo Ihara
IPC分类号： C04B10100
CPC分类号： H01L39/126
摘要： Proposed are a selective reduction type high temperature superconductor and methods of making the same, the superconductor having a pair of charge supply layers each formed of a Cu1-xMx surface (1, 1), a first superconducting layer formed of a 5-coordination CuO2 surface (2) and a second superconducting layer formed of a 4-coordination CuO2 surface (3). Reducing M ions (e.g., Tl ions) in the charge supply layers by heat treatment in a reducing atmosphere enables the 5-coordination CuO2 surface (2) as the first superconducting layer to be over-doped and the 4-coordination CuO2 surface (3) as the second superconducting layer to be optimum-doped. According to the present invention, a high temperature superconductor is provided that with its critical temperature held high has a reduced superconducting anisotropy &ggr;, and provides a high critical current density Jc and a high c irreversibility field Hirr.
摘要翻译：提出了一种选择性还原型高温超导体及其制造方法，该超导体具有由Cu1-xMx表面（1,1）形成的一对电荷供给层，由五配位CuO 2形成的第一超导层表面（2）和由4-配位CuO 2表面（3）形成的第二超导层。通过在还原气氛中进行热处理，在电荷供给层中还原M离子（例如，Tl离子）使得能够将作为第一超导层的5-配位CuO 2表面（2）过掺杂，并且将4-配位CuO 2表面（3 ）作为最佳掺杂的第二超导层。根据本发明，提供了一种高温超导体，其临界温度保持较高，具有降低的超导各向异性γ，并提供高临界电流密度Jc和高c不可逆性场Hirr。

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