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1. 发明申请

US20110275020A1 Methods Of Forming Photoresist Patterns 有权
标题翻译：形成光刻胶图案的方法
公开(公告)号：US20110275020A1
公开(公告)日：2011-11-10
申请号：US13099910
申请日：2011-05-03
申请人： Subramanya Mayya , Takahiro Yasue , Seok-hwan Oh , Yool Kang
发明人： Subramanya Mayya , Takahiro Yasue , Seok-hwan Oh , Yool Kang
IPC分类号： G03F7/20 , G03F7/32
CPC分类号： G03F7/40 , G03F7/322
摘要： Methods of forming photoresist patterns may include forming a photoresist layer on a substrate, exposing the photoresist layer using an exposure mask, forming a preliminary pattern by developing the exposed photoresist layer and treating a surface of the preliminary pattern using a treatment agent that includes a coating polymer.
摘要翻译：形成光致抗蚀剂图案的方法可以包括在基板上形成光致抗蚀剂层，使用曝光掩模曝光光致抗蚀剂层，通过显影曝光的光致抗蚀剂层和使用包括涂层的处理剂处理初步图案的表面来形成初步图案聚合物。

2. 发明授权

US08735053B2 Methods of forming photoresist patterns 有权
标题翻译：形成光刻胶图案的方法
公开(公告)号：US08735053B2
公开(公告)日：2014-05-27
申请号：US13099910
申请日：2011-05-03
申请人： Subramanya Mayya , Takahiro Yasue , Seok-hwan Oh , Yool Kang
发明人： Subramanya Mayya , Takahiro Yasue , Seok-hwan Oh , Yool Kang
IPC分类号： G03F7/26
CPC分类号： G03F7/40 , G03F7/322
摘要： Methods of forming photoresist patterns may include forming a photoresist layer on a substrate, exposing the photoresist layer using an exposure mask, forming a preliminary pattern by developing the exposed photoresist layer and treating a surface of the preliminary pattern using a treatment agent that includes a coating polymer.
摘要翻译：形成光致抗蚀剂图案的方法可以包括在基板上形成光致抗蚀剂层，使用曝光掩模曝光光致抗蚀剂层，通过显影曝光的光致抗蚀剂层和使用包括涂层的处理剂处理初步图案的表面来形成初步图案聚合物。

3. 发明授权

US09063414B2 Photoresist composition 有权
标题翻译：光刻胶组成
公开(公告)号：US09063414B2
公开(公告)日：2015-06-23
申请号：US13190173
申请日：2011-07-25
申请人： Koji Ichikawa , Mitsuhiro Hata , Takahiro Yasue
发明人： Koji Ichikawa , Mitsuhiro Hata , Takahiro Yasue
IPC分类号： G03F7/004 , G03F7/039
CPC分类号： G03F7/0045 , G03F7/0397
摘要： The present invention provides a photoresist composition comprising a resin which comprises a structural unit derived from a compound having an acid-labile group and which is insoluble or poorly soluble in an alkali aqueous solution but becomes soluble in an alkali aqueous solution by the action of an acid, an acid generator and a compound represented by the formula (I): wherein R1 and R2 are independently in each occurrence a C1-C12 hydrocarbon group, a C1-C6 alkoxy group, a C2-C7 acyl group, a C2-C7 acyloxy group, a C2-C7 alkoxycarbonyl group, a nitro group or a halogen atom, and m and n independently each represent an integer of 0 to 4.
摘要翻译：本发明提供一种光致抗蚀剂组合物，其包含树脂，其包含衍生自具有酸不稳定基团的化合物的结构单元，其在碱性水溶液中不溶或难溶于碱性水溶液，但通过酸，酸产生剂和由式（I）表示的化合物：其中R1和R2在每次出现时独立地为C1-C12烃基，C1-C6烷氧基，C2-C7酰基，C2-C7 酰氧基，C 2 -C 7烷氧基羰基，硝基或卤素原子，m和n分别表示0〜4的整数。

4. 发明授权

US08563218B2 Resist composition and method for producing resist pattern 有权
标题翻译：抗蚀剂组合物和抗蚀剂图案的制造方法
公开(公告)号：US08563218B2
公开(公告)日：2013-10-22
申请号：US13404123
申请日：2012-02-24
申请人： Koji Ichikawa , Takahiro Yasue
发明人： Koji Ichikawa , Takahiro Yasue
IPC分类号： G03F7/004 , G03F7/30 , G03F7/38 , G03F7/039
CPC分类号： G03F7/38 , G03F7/0045 , G03F7/0046 , G03F7/0392 , G03F7/0397 , G03F7/11 , G03F7/2041 , G03F7/30 , Y10S430/108 , Y10S430/111
摘要： A resist composition of the present invention has (A1) a resin having a structural unit represented by the formula (I), (A2) a resin being insoluble or poorly soluble in alkali aqueous solution, but becoming soluble in an alkali aqueous solution by the action of an acid, (B) an acid generator and (D) a compound represented by the formula (II). wherein R1 represents a hydrogen atom or a methyl group; A1 represents a C1 to C6 alkanediyl group; R2 represents a C1 to C10 hydrocarbon group having a fluorine atom, R3 and R4 in each occurrence independently represent a C1 to C12 hydrocarbon group, a C1 to C6 alkoxyl group, a C2 to C7 acyl group, a C2 to C7 acyloxy group, a C2 to C7 alkoxycarbonyl group, a nitro group or a halogen atom; m′ and n′ independently represent an integer of 0 to 4.
摘要翻译：本发明的抗蚀剂组合物具有（A1）具有由式（I）表示的结构单元的树脂，（A2）树脂在碱性水溶液中不溶或难溶，但在碱性水溶液中溶解，酸的作用，（B）酸产生剂和（D）由式（II）表示的化合物。其中R1表示氢原子或甲基; A1表示C1〜C6烷二基; R2表示具有氟原子的C1〜C10烃基，R3和R4各自独立地表示C1〜C12烃基，C1〜C6烷氧基，C2〜C7酰基，C2〜C7酰氧基， C2至C7烷氧基羰基，硝基或卤素原子; m'和n'独立地表示0〜4的整数。

5. 发明授权

US08338815B2 Memory units and related semiconductor devices including nanowires 失效
标题翻译：存储器单元和包括纳米线的相关半导体器件
公开(公告)号：US08338815B2
公开(公告)日：2012-12-25
申请号：US12851268
申请日：2010-08-05
申请人： Moon-Sook Lee , Byeong-Ok Cho , Man-Hyoung Ryoo , Takahiro Yasue
发明人： Moon-Sook Lee , Byeong-Ok Cho , Man-Hyoung Ryoo , Takahiro Yasue
IPC分类号： H01L29/04 , H01L47/00
CPC分类号： H01L27/11507 , B82Y10/00 , H01L27/10 , H01L27/1021 , H01L27/24
摘要： Methods of fabricating a memory unit are provided including forming a plurality of first nanowire structures, each of which includes a first nanowire extending in a first direction parallel to the first substrate and a first electrode layer enclosing the first nanowire, on a first substrate. The first electrode layers are partially removed to form first electrodes beneath the first nanowires. A first insulation layer filling up spaces between structures, each of which includes the first nanowire and the first electrode, is formed on the first substrate. A second electrode layer is formed on the first nanowires and the first insulation layer. A plurality of second nanowires is formed on the second electrode layer, each of which extends in a second direction perpendicular to the first direction. The second electrode layer is partially etched using the second nanowires as an etching mask to form a plurality of second electrodes. Related memory units, methods of fabricating semiconductor devices and semiconductor devices are also provided.
摘要翻译：提供了一种制造存储器单元的方法，包括形成多个第一纳米线结构，每个第一纳米线结构包括在第一衬底上沿与第一衬底平行的第一方向延伸的第一纳米线和包围第一纳米线的第一电极层。第一电极层被部分地去除以在第一纳米线下方形成第一电极。填充第一基板上形成有第一纳米线和第一电极的结构之间的空间的第一绝缘层。在第一纳米线和第一绝缘层上形成第二电极层。多个第二纳米线形成在第二电极层上，每个第二纳米线沿垂直于第一方向的第二方向延伸。使用第二纳米线作为蚀刻掩模来部分蚀刻第二电极层以形成多个第二电极。还提供了相关的存储单元，制造半导体器件和半导体器件的方法。

6. 发明申请

US20090189152A1 FERROELECTRIC MEMORY DEVICE 审中-公开
标题翻译：电磁存储器件
公开(公告)号：US20090189152A1
公开(公告)日：2009-07-30
申请号：US12354990
申请日：2009-01-16
申请人： Byeong-Ok Cho , Moon-Sook Lee , Man-Hyoung Ryoo , Jung-Hyeon Kim , Takahiro Yasue
发明人： Byeong-Ok Cho , Moon-Sook Lee , Man-Hyoung Ryoo , Jung-Hyeon Kim , Takahiro Yasue
IPC分类号： H01L51/00 , H01L29/76
CPC分类号： H01L29/78391 , B82Y10/00 , G11C11/22 , H01L29/40111 , H01L29/516 , H01L29/6684
摘要： Provided is a ferroelectric memory device. The ferroelectric memory device includes an inorganic channel pattern on a substrate, a source electrode and a drain electrode spaced apart from each other on the substrate and contacting the inorganic channel pattern, a gate electrode disposed adjacent to the inorganic channel pattern, and an organic ferroelectric layer interposed between the inorganic channel pattern and the gate electrode.
摘要翻译：提供了一种铁电存储器件。铁电存储器件包括在衬底上的无机沟道图案，在衬底上彼此间隔开的源电极和漏电极，并与无机沟道图案接触，邻近无机沟道图案设置的栅电极和有机铁电体介于无机通道图案和栅电极之间的层。

7. 发明授权

US08859182B2 Resist composition and method for producing resist pattern 有权
标题翻译：抗蚀剂组合物和抗蚀剂图案的制造方法
公开(公告)号：US08859182B2
公开(公告)日：2014-10-14
申请号：US13404064
申请日：2012-02-24
申请人： Koji Ichikawa , Takahiro Yasue , Akira Kamabuchi
发明人： Koji Ichikawa , Takahiro Yasue , Akira Kamabuchi
IPC分类号： G03F7/004 , G03F7/027 , C08F26/06 , G03F7/20 , G03F7/039
CPC分类号： G03F7/027 , G03F7/0045 , G03F7/0397 , G03F7/20 , G03F7/2041
摘要： A resist composition contains (A) a resin having a structural unit represented by the formula (I), (B) an acid generator and (D) a compound represented by the formula (II), wherein R1, ring X1, R3, R4, m, and n are defined in the specification.
摘要翻译：抗蚀剂组合物含有（A）具有由式（I）表示的结构单元，（B）酸产生剂和（D）由式（II）表示的化合物的树脂，其中R1，X1，R3，R4 ，m和n在说明书中定义。

8. 发明授权

US08105697B2 Polymer memory device and method of forming the same 有权
标题翻译：聚合物记忆装置及其形成方法
公开(公告)号：US08105697B2
公开(公告)日：2012-01-31
申请号：US11905510
申请日：2007-10-02
申请人： Byeong-Ok Cho , Takahiro Yasue , Moon-Sook Lee
发明人： Byeong-Ok Cho , Takahiro Yasue , Moon-Sook Lee
IPC分类号： B21D39/00 , B32B9/02
CPC分类号： H01L27/285 , B82Y10/00 , G11C13/0014 , G11C13/0016 , H01L51/0035 , H01L51/0047 , Y10T428/12556 , Y10T428/31681 , Y10T428/31721
摘要： Provided is a polymer memory device and a method of forming the same. The polymer memory device may include a first electrode, a first curable polymer layer, a second electrode, a second curable polymer layer, and a third electrode. The first electrode may be disposed on a substrate. The first curable polymer layer may cover the first electrode. The second electrode may be disposed on the first curable polymer layer and cross over the first electrode. The second curable polymer layer may cover the second electrode. The third electrode may be disposed on the second curable polymer layer and cross over the second electrode. Each of the first curable polymer layer and the second curable polymer layer may contain a fullerene or a fullerene derivative.
摘要翻译：提供聚合物记忆装置及其形成方法。聚合物记忆装置可以包括第一电极，第一可固化聚合物层，第二电极，第二可固化聚合物层和第三电极。第一电极可以设置在基板上。第一可固化聚合物层可以覆盖第一电极。第二电极可以设置在第一可固化聚合物层上并与第一电极交叉。第二可固化聚合物层可以覆盖第二电极。第三电极可以设置在第二可固化聚合物层上并与第二电极交叉。第一可固化聚合物层和第二可固化聚合物层中的每一个可以含有富勒烯或富勒烯衍生物。

9. 发明申请

US20090085072A1 Biosensor using nanoscale material as transistor channel and method of fabricating the same 有权
标题翻译：使用纳米级材料作为晶体管沟道的生物传感器及其制造方法
公开(公告)号：US20090085072A1
公开(公告)日：2009-04-02
申请号：US12232243
申请日：2008-09-12
申请人： Moon-Sook Lee , Byeong-Ok Cho , Man-Hyoung Ryoo , Takahiro Yasue , Jung-Hwan Hah
发明人： Moon-Sook Lee , Byeong-Ok Cho , Man-Hyoung Ryoo , Takahiro Yasue , Jung-Hwan Hah
IPC分类号： H01L21/28 , H01L29/772
CPC分类号： G01N27/4145 , B82Y10/00 , B82Y15/00 , G01N27/4146 , H01L51/0595 , H01L2924/0002 , H01L2924/00
摘要： Example embodiments relate to a biosensor using a nanoscale material as a channel of a transistor and a method of fabricating the same. A biosensor according to example embodiments may include a plurality of insulating films. A first signal line and a second signal line may be interposed between the plurality of insulating films. A semiconductor nanostructure may be disposed on the plurality of insulating films, the semiconductor nanostructure having a first side electrically connected to the first signal line and a second side electrically connected to the second signal line. A plurality of probes may be coupled to the semiconductor nanostructure. A biosensor according to example embodiments may have a reduced analysis time.
摘要翻译：实施例涉及使用纳米级材料作为晶体管的沟道的生物传感器及其制造方法。根据示例性实施例的生物传感器可以包括多个绝缘膜。第一信号线和第二信号线可以插入在多个绝缘膜之间。半导体纳米结构可以设置在多个绝缘膜上，半导体纳米结构具有电连接到第一信号线的第一侧和与第二信号线电连接的第二侧。多个探针可以耦合到半导体纳米结构。根据示例性实施例的生物传感器可以具有减少的分析时间。

10. 发明申请

US20080131712A1 Polymer memory device and method of forming the same 有权
标题翻译：聚合物记忆装置及其形成方法
公开(公告)号：US20080131712A1
公开(公告)日：2008-06-05
申请号：US11905510
申请日：2007-10-02
申请人： Byeong-Ok Cho , Takahiro Yasue , Moon-Sook Lee
发明人： Byeong-Ok Cho , Takahiro Yasue , Moon-Sook Lee
IPC分类号： B32B27/06 , B05D5/12
CPC分类号： H01L27/285 , B82Y10/00 , G11C13/0014 , G11C13/0016 , H01L51/0035 , H01L51/0047 , Y10T428/12556 , Y10T428/31681 , Y10T428/31721
摘要： Provided is a polymer memory device and a method of forming the same. The polymer memory device may include a first electrode, a first curable polymer layer, a second electrode, a second curable polymer layer, and a third electrode. The first electrode may be disposed on a substrate. The first curable polymer layer may cover the first electrode. The second electrode may be disposed on the first curable polymer layer and cross over the first electrode. The second curable polymer layer may cover the second electrode. The third electrode may be disposed on the second curable polymer layer and cross over the second electrode. Each of the first curable polymer layer and the second curable polymer layer may contain a fullerene or a fullerene derivative.
摘要翻译：提供聚合物记忆装置及其形成方法。聚合物记忆装置可以包括第一电极，第一可固化聚合物层，第二电极，第二可固化聚合物层和第三电极。第一电极可以设置在基板上。第一可固化聚合物层可以覆盖第一电极。第二电极可以设置在第一可固化聚合物层上并与第一电极交叉。第二可固化聚合物层可以覆盖第二电极。第三电极可以设置在第二可固化聚合物层上并与第二电极交叉。第一可固化聚合物层和第二可固化聚合物层中的每一个可以含有富勒烯或富勒烯衍生物。

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