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    • 10. 发明授权
    • Process for making dense thin films
    • 制造薄膜的工艺
    • US06921557B2
    • 2005-07-26
    • US10323137
    • 2002-12-18
    • Craig P. JacobsonSteven J. ViscoLutgard C. DeJonghe
    • Craig P. JacobsonSteven J. ViscoLutgard C. DeJonghe
    • B05D1/36B05D3/02H01M8/12
    • H01M8/1213H01M4/9066H01M8/1226H01M8/1246Y02E60/525Y02P70/56
    • Provided are low-cost, mechanically strong, highly electronically conductive porous substrates and associated structures for solid-state electrochemical devices, techniques for forming these structures, and devices incorporating the structures. The invention provides solid state electrochemical device substrates of novel composition and techniques for forming thin electrode/membrane/electrolyte coatings on the novel or more conventional substrates. In particular, in one embodiment the invention provides techniques for firing of device substrate to form densified electrolyte/membrane films 5 to 20 microns thick. In another embodiment, densified electrolyte/membrane films 5 to 20 microns thick may be formed on a pre-sintered substrate by a constrained sintering process. In some cases, the substrate may be a porous metal, alloy, or non-nickel cermet incorporating one or more of the transition metals Cr, Fe, Cu and Ag, or alloys thereof.
    • 提供了低成本,机械强度高的电子导电多孔基底和用于固态电化学装置的相关结构,用于形成这些结构的技术以及结合该结构的装置。 本发明提供了用于在新颖或更传统的基底上形成薄电极/膜/电解质涂层的新型组成和技术的固态电化学装置基板。 特别地,在一个实施例中,本发明提供了用于烧制器件衬底以形成5至20微米厚的致密化电解质/膜膜的技术。 在另一个实施方案中,可以通过约束烧结工艺在预烧结衬底上形成5至20微米厚的致密化电解质/膜膜。 在一些情况下,基底可以是包含一种或多种过渡金属Cr,Fe,Cu和Ag的多孔金属,合金或非镍金属陶瓷,或其合金。