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1. 发明授权

US5663597A RF device package for high frequency applications 失效
标题翻译： RF器件封装，用于高频应用
公开(公告)号：US5663597A
公开(公告)日：1997-09-02
申请号：US344798
申请日：1994-11-23
申请人： Stephen R. Nelson , Buford H. Carter , Dennis D. Davis , Tammy J. Lahutsky , John Barnett , Glen R. Haas, Jr.
发明人： Stephen R. Nelson , Buford H. Carter , Dennis D. Davis , Tammy J. Lahutsky , John Barnett , Glen R. Haas, Jr.
IPC分类号： H01L23/50 , H01L23/495 , H01L23/66 , H03F3/60 , H05K1/02 , H05K1/18 , H05K3/34 , H01L23/48 , H01L23/52
CPC分类号： H01L24/06 , H01L23/49541 , H01L23/49575 , H01L23/66 , H01L24/49 , H01L2223/6644 , H01L2224/0401 , H01L2224/05553 , H01L2224/0603 , H01L2224/48137 , H01L2224/48195 , H01L2224/48247 , H01L2224/49111 , H01L2224/49171 , H01L2224/49175 , H01L24/48 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/01033 , H01L2924/01072 , H01L2924/01077 , H01L2924/01082 , H01L2924/014 , H01L2924/10329 , H01L2924/1305 , H01L2924/14 , H01L2924/1423 , H01L2924/15787 , H01L2924/19107 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H01L2924/30111 , H01L2924/3025 , H05K1/0237 , H05K1/182 , H05K3/3421
摘要： This is a device package comprising: a leadframe comprising a plurality of leads for effecting circuit connections to the device; and a metal ground piece connected to the leadframe. Other devices and methods are also disclosed.
摘要翻译：这是一种器件封装，包括：引线框，其包括用于实现到器件的电路连接的多个引线; 以及连接到引线框的金属接地片。还公开了其它装置和方法。

2. 发明授权

US5376909A Device packaging 失效
标题翻译：设备包装
公开(公告)号：US5376909A
公开(公告)日：1994-12-27
申请号：US65691
申请日：1993-05-21
申请人： Stephen R. Nelson , Buford H. Carter, Jr. , Tammy J. Lahutsky , Glen R. Haas , Dennis D. Davis , Charles W. Suckling , Glenn Collinson
发明人： Stephen R. Nelson , Buford H. Carter, Jr. , Tammy J. Lahutsky , Glen R. Haas , Dennis D. Davis , Charles W. Suckling , Glenn Collinson
IPC分类号： H01L23/04 , H01L23/02 , H01L23/12 , H01L23/433 , H01L23/495 , H01L23/66 , H01L23/28
CPC分类号： H01L23/66 , H01L23/4334 , H01L23/49541 , H01L24/49 , H01L2223/6644 , H01L2224/45144 , H01L2224/48137 , H01L2224/48247 , H01L2224/49111 , H01L2224/49171 , H01L2224/49175 , H01L24/45 , H01L24/48 , H01L2924/00014 , H01L2924/01027 , H01L2924/01031 , H01L2924/01033 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10329 , H01L2924/1305 , H01L2924/1306 , H01L2924/14 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/30107 , H01L2924/3011 , H01L2924/30111 , H01L2924/3025
摘要： This is a package [10] for an rf device [11] operable with a characteristic impedance providing a plurality of terminals [12-19] and [101] for effecting circuit connections to the device, the connection between at least one of the terminals and the device being matched in relation to the characteristic impedance. Other devices and methods are also disclosed.
摘要翻译：这是一种可用于具有提供多个终端[12-19]和[101]的特征阻抗的射频设备[11]的封装[10]，用于实现到该设备的电路连接，至少一个终端并且该器件相对于特性阻抗匹配。还公开了其它装置和方法。

3. 发明授权

US5536906A Package for integrated circuits 失效
标题翻译：集成电路封装
公开(公告)号：US5536906A
公开(公告)日：1996-07-16
申请号：US097336
申请日：1993-07-23
申请人： Glen R. Haas, Jr. , John E. Barnett, Jr. , Stephen R. Nelson , Douglas J. Darrow , Susan V. Bagen , Henry Breit , James Forster
发明人： Glen R. Haas, Jr. , John E. Barnett, Jr. , Stephen R. Nelson , Douglas J. Darrow , Susan V. Bagen , Henry Breit , James Forster
IPC分类号： H01L23/433 , H01L23/495 , H01L23/66 , H01L23/02
CPC分类号： H01L24/49 , H01L23/4334 , H01L23/49531 , H01L23/66 , H01L2224/05554 , H01L2224/45015 , H01L2224/45144 , H01L2224/48137 , H01L2224/48247 , H01L2224/49111 , H01L2224/49171 , H01L24/45 , H01L24/48 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01018 , H01L2924/01028 , H01L2924/01029 , H01L2924/01031 , H01L2924/01033 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10329 , H01L2924/12042 , H01L2924/14 , H01L2924/15787 , H01L2924/181 , H01L2924/19041 , H01L2924/20752 , H01L2924/30107 , H01L2924/3011 , H01L2924/30111
摘要： In one form of the invention, a package for integrated circuits and devices (42), (46) is disclosed, the package including: a package base (44), the base having a first top surface; a layer of material (43) on the first top surface of the base (44) wherein the material (43) is patterned to cover a portion of the base, and wherein the layer of material (43) forms a substrate having a second top surface; a microstrip transmission line (45) on the second top surface; and a plastic encapsulant (50), wherein the encapsulant covers the first top surface of the base.
摘要翻译：在本发明的一种形式中，公开了一种用于集成电路和器件（42），（46）的封装，所述封装包括：封装基座（44），所述基座具有第一顶表面; 在所述基座（44）的所述第一顶表面上的材料层（43），其中所述材料（43）被图案化以覆盖所述基部的一部分，并且其中所述材料层（43）形成具有第二顶部表面; 在第二顶表面上的微带传输线（45）; 和塑料密封剂（50），其中所述密封剂覆盖所述基底的第一顶表面。

4. 发明授权

US06801098B2 Group delay equalizer integrated with a wideband distributed amplifier monolithic microwave integrated circuit 有权
标题翻译：集群延迟均衡器与宽带分布式放大器单片微波集成电路集成
公开(公告)号：US06801098B2
公开(公告)日：2004-10-05
申请号：US10061716
申请日：2002-01-31
申请人： Kazuya Ozawa , Saphan Yok , Stephen R. Nelson
发明人： Kazuya Ozawa , Saphan Yok , Stephen R. Nelson
IPC分类号： H03H500
CPC分类号： H03F3/60 , H03F3/602
摘要： A wideband distributed or feedback amplifier monolithic microwave integrated circuit (MMIC) is disclosed that contains an integrated group delay equalizer circuit to compensate for the group delay variation of the amplifier circuitry. The MMIC amplifier is capable of achieving a predicted constant group delay with little variation over a wide frequency range. In addition, the group delay equalizer circuit enables the amplifier to achieve flat (constant) gain over a wide bandwidth, while maintaining constant group delay. Furthermore, the group delay equalizer circuitry requires only a small portion of the total MMIC area.
摘要翻译：公开了一种宽带分布式或反馈放大器单片微波集成电路（MMIC），其包含集成组延迟均衡器电路以补偿放大器电路的组延迟变化。 MMIC放大器能够实现在宽频率范围内几乎没有变化的预测恒定群延迟。此外，组延迟均衡器电路使得放大器能够在宽带宽下实现平坦（恒定）增益，同时保持恒定的组延迟。此外，组延迟均衡器电路仅需要总MMIC面积的一小部分。

5. 发明授权

US6081006A Reduced size field effect transistor 有权
标题翻译：减小尺寸场效应晶体管
公开(公告)号：US6081006A
公开(公告)日：2000-06-27
申请号：US134291
申请日：1998-08-13
申请人： Stephen R. Nelson
发明人： Stephen R. Nelson
IPC分类号： H01L23/48 , H01L23/482 , H01L29/417 , H01L29/423 , H01L29/812 , H01L29/772
CPC分类号： H01L23/4821 , H01L23/481 , H01L23/4824 , H01L24/05 , H01L29/41725 , H01L29/42316 , H01L29/812 , H01L2924/12032 , H01L2924/1306 , H01L2924/13063 , H01L2924/14 , H01L2924/3011
摘要： A reduced size field effect transistor is disclosed which has a substrate with a body of semiconductor material having an active region on one surface thereof, and a common conductor located in remote insulated relation to the one surface of the semiconductor body, a pair of source electrodes, a drain electrode and a gate electrode located on the one surface, with the drain electrode having drain fingers located on opposite sides of each of the source electrodes and an air bridge overlying the source electrodes and interconnecting the drain fingers located on opposite sides of each of the source electrodes, the gate electrode having a connection pad at one side thereof and a manifold extending between the source electrodes, and having gate fingers extending between the drain fingers and the source electrodes, and conductive connections between the source electrodes and the common conductor.
摘要翻译：公开了一种减小尺寸的场效应晶体管，其具有基板，该基板具有在其一个表面上具有有源区的半导体材料体，以及位于半导体主体的一个表面的远程绝缘关系中的公共导体，一对源电极位于一个表面上的漏电极和栅电极，漏电极具有位于每个源电极的相对侧上的漏极指状物，并且覆盖源电极的空气桥和互连位于每个源电极的相对侧上的漏极指的源电极，栅电极在其一侧具有连接焊盘和在源极之间延伸的歧管，并且具有在漏极指和源电极之间延伸的栅极指，以及源电极和公共导体之间的导电连接。

6. 发明授权

US06815740B2 Gate feed structure for reduced size field effect transistors 有权
标题翻译：用于减小尺寸场效应晶体管的栅极馈电结构
公开(公告)号：US06815740B2
公开(公告)日：2004-11-09
申请号：US10158265
申请日：2002-05-29
申请人： Stephen R. Nelson , Gregory T. Clark , Dean R. White
发明人： Stephen R. Nelson , Gregory T. Clark , Dean R. White
IPC分类号： H01L2980
CPC分类号： H01L29/42316 , H01L23/4824 , H01L29/0692 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： A FET or BJT structure or distributed transistor amplifier having a tapered gate feed line and a tapered channel width (tapered source fingers, tapered drain fingers) provides increased bandwidth and gain in the microwave/mm-wave frequency spectrum.

7. 发明授权

US5271851A Integrated treatment system for refinery oily sludges 失效
标题翻译：炼油油污泥综合处理系统
公开(公告)号：US5271851A
公开(公告)日：1993-12-21
申请号：US27879
申请日：1993-03-08
申请人： Stephen R. Nelson , Alan M. Claude
发明人： Stephen R. Nelson , Alan M. Claude
IPC分类号： B01D29/39 , B01D37/02 , B01D29/01
CPC分类号： B01D37/02 , B01D29/39
摘要： A process for the treatment of refinery oily sludges to produce an oily fraction that is reprocessed in the refinery into (i) salable products and (ii) a solid residue meeting environmental regulatory agency requirements for disposal in non-hazardous solid waste landfills. The process includes mixing the refinery oily sludge with a particulate filter aid and preferably a single solvent selected from refinery intermediate and product streams and contacting this mixture with plate filters in a closed filter vessel. A cake residue forms on the filter plates and a filtrate mixture of oil, water and solvent is produced. The filtrate is separated into an oily fraction and a water fraction. The oily fraction is rerouted to refinery operating units for processing into salable products. The water fraction is routed to a refinery water treatment system. When filter cake residue has built to a predetermined level, charge to the filter vessel is discontinued. The filter cake residue is washed with a predetermined quantity of solvent and then steam stripped to remove petroleum hydrocarbons to a desired residual level, e.g. less than about 1,000 ppm or less than 500 ppm. The steam stripped filter cake is then removed from the filter vessel for disposal in an environmentally approved landfill.
摘要翻译：一种处理炼油油污泥的方法，用于生产在炼油厂中再处理的油性馏分为（i）可销售产品和（ii）符合环境管理机构在非危险性固体废物堆填区处置的要求的固体残渣。该方法包括将精炼油性污泥与微粒过滤助剂混合，优选将选自炼厂中间体和产物流的单一溶剂混合，并将该混合物与板式过滤器在封闭的过滤容器中接触。在滤板上形成滤饼，产生油，水和溶剂的滤液混合物。将滤液分离成油状部分和水分。油性馏分被重新路由到炼油厂操作单元，用于加工成可销售的产品。水分被送到炼油厂水处理系统。当滤饼残渣达到预定水平时，停止对过滤容器的充电。滤饼残留物用预定量的溶剂洗涤，然后蒸汽汽提以除去石油烃至所需的残留水平，例如，小于约1,000ppm或小于500ppm。然后将蒸汽汽提的滤饼从过滤器容器中取出，以便在环境认证的垃圾填埋场中处理。

8. 发明授权

US4666562A Solvent recovery from solvent process material mixtures 失效
标题翻译：溶剂回收溶剂工艺材料混合物
公开(公告)号：US4666562A
公开(公告)日：1987-05-19
申请号：US424393
申请日：1982-09-27
申请人： Stephen R. Nelson
发明人： Stephen R. Nelson
IPC分类号： B01D3/06 , B01D3/38 , C10G1/00 , C10G21/00 , C10G21/28 , C10G7/00
CPC分类号： B01D3/06 , B01D3/38 , C10G1/002 , C10G21/003 , C10G21/28 , Y10S203/90
摘要： A method of recovering light organic solvent from a liquid mixture containing the solvent and a process material, such as asphaltenes or coal liquefaction products. The solvent-process material mixture is treated in a solvent separation zone to separate a first vapor phase rich in solvent and a first liquid phase rich in process material. At least a portion of the liquid in the solvent separation zone is transferred to a mixing zone, where the liquid is intimately contacted with steam, under shearing conditions. The steam-liquid phase mixture thus produced is returned to the solvent separation zone and treated to separate a second vapor phase, rich in steam and solvent, and a second liquid phase, rich in process material and substantially depleted of solvent. Solvent is recovered from the first and second vapor phases.
摘要翻译：从含有溶剂的液体混合物和沥青质或煤液化产物等工艺材料中回收轻质有机溶剂的方法。溶剂处理材料混合物在溶剂分离区中处理以分离富含溶剂的第一气相和富含工艺材料的第一液相。在剪切条件下，将溶剂分离区中的液体的至少一部分转移到混合区，其中液体与蒸汽紧密接触。将如此制备的蒸汽 - 液相混合物返回到溶剂分离区并进行处理以分离富含蒸气和溶剂的第二气相，以及富含工艺材料和基本上不含溶剂的第二液相。从第一和第二蒸气相回收溶剂。

9. 发明授权

US4921191A Adjustable waveguide/conduit clamp 失效
标题翻译：可调波导/导管夹
公开(公告)号：US4921191A
公开(公告)日：1990-05-01
申请号：US206387
申请日：1988-06-14
申请人： Wilbert H. Herschler , Stephen R. Nelson
发明人： Wilbert H. Herschler , Stephen R. Nelson
IPC分类号： F16L3/00 , F16L3/12
CPC分类号： F16L3/12 , F16L3/006
摘要： A waveguide/conduit clamp has a load bearing frame with slotted mounting provisions and two mated center rings, an inner circular member with a center cutout to accommodate a waveguide or other conduit member and an outer circular member with a circular cutout displaced from its centerline by a specified offset. Rotation of the outer member, while maintaining orientation of the central one, results in vertical and horizontal displacement of the cutout in the central unit. When proper vertical distance of the cutout is achieved, the clamp is moved in its slotted mounting base to provide final adjusted position of the central member's waveguide/conduit workpiece. Both circular members have slits allowing their placement around the workpiece and within the clamp's load bearing frame.
摘要翻译：波导/管道夹具具有带有开槽安装部件和两个配合的中心环的承载框架，具有中心切口以容纳波导或其它导管构件的内圆形构件和具有圆形切口的外圆形构件，圆形切口从其中心线移位，指定的偏移量。外部构件的旋转同时保持中心的定向，导致中心单元中的切口的垂直和水平位移。当实现切口的适当垂直距离时，夹具在其开槽安装基座中移动，以提供中心构件的波导管道工件的最终调整位置。两个圆形构件具有允许它们放置在工件周围并且在夹具的承载框架内的狭缝。

10. 发明授权

US06545543B2 Small aspect ratio MMIC power amplifier layout 失效
标题翻译：小宽高比MMIC功率放大器布局
公开(公告)号：US06545543B2
公开(公告)日：2003-04-08
申请号：US09900562
申请日：2001-07-06
申请人： Stephen R. Nelson
发明人： Stephen R. Nelson
IPC分类号： H03F314
CPC分类号： H01L27/088 , H01L27/0207 , H01L2224/49111 , H01L2924/01055 , H01L2924/12032 , H01L2924/13063 , H01L2924/14 , H01L2924/1423 , H01L2924/00
摘要： A small aspect ratio, high power MMIC amplifier is disclosed. The small aspect ratio MMIC amplifier is capable of achieving the same power levels as conventional power amplifier designs, but with an aspect ratio of near 1:1, versus 4:1 of conventional power amplifiers. The small aspect ratio MMIC amplifier layout uses two different types of FETs, with all gate fingers of both types of FETs running in the same direction. One type of FET is a conventional FET, in which the gate stripes run parallel to the direction of the output. In the conventional FET, the gate manifold and the drain manifold both generally extend in the x-direction (parallel to each other). The other type of FET has gate fingers that run perpendicular to the direction of the output. In this other type of FET, the gate manifold generally extends in the x-direction, while the drain manifold generally extends in the y-direction (perpendicular to each other). By using two different types of FETs, large gate width power FETs can be placed on two, three or four sides of the MMIC.
摘要翻译：公开了一种小尺寸比的高功率MMIC放大器。小尺寸比MMIC放大器能够实现与传统功率放大器设计相同的功率水平，但是与常规功率放大器相比，其纵横比接近1：1，而4：1。小尺寸比MMIC放大器布局使用两种不同类型的FET，两种类型的FET的所有栅极指针在相同方向上运行。一种类型的FET是常规FET，其中栅极条平行于输出的方向延伸。在传统的FET中，门歧管和排水歧管两者通常在x方向（彼此平行）延伸。另一种类型的FET具有垂直于输出方向延伸的栅极指状物。在这种其他类型的FET中，门歧管通常在x方向上延伸，而排水歧管通常沿y方向（彼此垂直）延伸。通过使用两种不同类型的FET，可以将大栅极宽度功率FET放置在MMIC的两侧，三侧或四侧。

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