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1. 发明授权

US06801098B2 Group delay equalizer integrated with a wideband distributed amplifier monolithic microwave integrated circuit 有权
标题翻译：集群延迟均衡器与宽带分布式放大器单片微波集成电路集成
公开(公告)号：US06801098B2
公开(公告)日：2004-10-05
申请号：US10061716
申请日：2002-01-31
申请人： Kazuya Ozawa , Saphan Yok , Stephen R. Nelson
发明人： Kazuya Ozawa , Saphan Yok , Stephen R. Nelson
IPC分类号： H03H500
CPC分类号： H03F3/60 , H03F3/602
摘要： A wideband distributed or feedback amplifier monolithic microwave integrated circuit (MMIC) is disclosed that contains an integrated group delay equalizer circuit to compensate for the group delay variation of the amplifier circuitry. The MMIC amplifier is capable of achieving a predicted constant group delay with little variation over a wide frequency range. In addition, the group delay equalizer circuit enables the amplifier to achieve flat (constant) gain over a wide bandwidth, while maintaining constant group delay. Furthermore, the group delay equalizer circuitry requires only a small portion of the total MMIC area.
摘要翻译：公开了一种宽带分布式或反馈放大器单片微波集成电路（MMIC），其包含集成组延迟均衡器电路以补偿放大器电路的组延迟变化。 MMIC放大器能够实现在宽频率范围内几乎没有变化的预测恒定群延迟。此外，组延迟均衡器电路使得放大器能够在宽带宽下实现平坦（恒定）增益，同时保持恒定的组延迟。此外，组延迟均衡器电路仅需要总MMIC面积的一小部分。

2. 发明授权

US6081006A Reduced size field effect transistor 有权
标题翻译：减小尺寸场效应晶体管
公开(公告)号：US6081006A
公开(公告)日：2000-06-27
申请号：US134291
申请日：1998-08-13
申请人： Stephen R. Nelson
发明人： Stephen R. Nelson
IPC分类号： H01L23/48 , H01L23/482 , H01L29/417 , H01L29/423 , H01L29/812 , H01L29/772
CPC分类号： H01L23/4821 , H01L23/481 , H01L23/4824 , H01L24/05 , H01L29/41725 , H01L29/42316 , H01L29/812 , H01L2924/12032 , H01L2924/1306 , H01L2924/13063 , H01L2924/14 , H01L2924/3011
摘要： A reduced size field effect transistor is disclosed which has a substrate with a body of semiconductor material having an active region on one surface thereof, and a common conductor located in remote insulated relation to the one surface of the semiconductor body, a pair of source electrodes, a drain electrode and a gate electrode located on the one surface, with the drain electrode having drain fingers located on opposite sides of each of the source electrodes and an air bridge overlying the source electrodes and interconnecting the drain fingers located on opposite sides of each of the source electrodes, the gate electrode having a connection pad at one side thereof and a manifold extending between the source electrodes, and having gate fingers extending between the drain fingers and the source electrodes, and conductive connections between the source electrodes and the common conductor.
摘要翻译：公开了一种减小尺寸的场效应晶体管，其具有基板，该基板具有在其一个表面上具有有源区的半导体材料体，以及位于半导体主体的一个表面的远程绝缘关系中的公共导体，一对源电极位于一个表面上的漏电极和栅电极，漏电极具有位于每个源电极的相对侧上的漏极指状物，并且覆盖源电极的空气桥和互连位于每个源电极的相对侧上的漏极指的源电极，栅电极在其一侧具有连接焊盘和在源极之间延伸的歧管，并且具有在漏极指和源电极之间延伸的栅极指，以及源电极和公共导体之间的导电连接。

3. 发明授权

US06774416B2 Small area cascode FET structure operating at mm-wave frequencies 有权
标题翻译：小区域共源共栅FET结构以毫米波频率工作
公开(公告)号：US06774416B2
公开(公告)日：2004-08-10
申请号：US09906312
申请日：2001-07-16
申请人： Stephen R. Nelson
发明人： Stephen R. Nelson
IPC分类号： H01L2980
CPC分类号： H01L27/0705 , H01L27/088
摘要： A small area cascode FET structure capable of operating at mm-wave frequenices cascades a common-source (CS) FET with a common gate (CG) FET, in a smaller physical area than conventional cascode FET structures. The small area of the cascode FET structure is partially achieved by using small source via grounds, requiring a thin gallium arsenide substrate (typically between 50 and 70 microns thick). The overall cascode area is reduced further, by having the two FETs share a common node. This common node is the output drain manifold of the CS FET, which is also an input source finger of the CG FET. In addition, small via grounds within the MIM capacitors and CS FET, which provide the ground connection to the gate manifolds of the CG FET, further reduce circuit area. Advantageously, the small area cascode FET can be applied to many different MMICs to reduce MMIC area requirements and cost.
摘要翻译：能够以毫米波频率工作的小面积共源共栅结构在比常规共源共栅FET结构更小的物理区域中将公共源（CS）FET与公共栅极（CG）FET串联。共源共栅FET结构的小面积部分地通过使用小的源极通孔来实现，需要薄的砷化镓衬底（通常在50和70微米厚之间）。通过使两个FET共享公共节点，整体共源共栅区域进一步减小。该公共节点是CS FET的输出漏极歧管，也是CG FET的输入源极。另外，提供与CG FET的栅极歧管的接地连接的MIM电容器和CS FET内的小通孔接地进一步减小了电路面积。有利地，小面积共源共栅FET可以应用于许多不同的MMIC以减少MMIC面积要求和成本。

4. 发明授权

US5663597A RF device package for high frequency applications 失效
标题翻译： RF器件封装，用于高频应用
公开(公告)号：US5663597A
公开(公告)日：1997-09-02
申请号：US344798
申请日：1994-11-23
申请人： Stephen R. Nelson , Buford H. Carter , Dennis D. Davis , Tammy J. Lahutsky , John Barnett , Glen R. Haas, Jr.
发明人： Stephen R. Nelson , Buford H. Carter , Dennis D. Davis , Tammy J. Lahutsky , John Barnett , Glen R. Haas, Jr.
IPC分类号： H01L23/50 , H01L23/495 , H01L23/66 , H03F3/60 , H05K1/02 , H05K1/18 , H05K3/34 , H01L23/48 , H01L23/52
CPC分类号： H01L24/06 , H01L23/49541 , H01L23/49575 , H01L23/66 , H01L24/49 , H01L2223/6644 , H01L2224/0401 , H01L2224/05553 , H01L2224/0603 , H01L2224/48137 , H01L2224/48195 , H01L2224/48247 , H01L2224/49111 , H01L2224/49171 , H01L2224/49175 , H01L24/48 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/01033 , H01L2924/01072 , H01L2924/01077 , H01L2924/01082 , H01L2924/014 , H01L2924/10329 , H01L2924/1305 , H01L2924/14 , H01L2924/1423 , H01L2924/15787 , H01L2924/19107 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H01L2924/30111 , H01L2924/3025 , H05K1/0237 , H05K1/182 , H05K3/3421
摘要： This is a device package comprising: a leadframe comprising a plurality of leads for effecting circuit connections to the device; and a metal ground piece connected to the leadframe. Other devices and methods are also disclosed.
摘要翻译：这是一种器件封装，包括：引线框，其包括用于实现到器件的电路连接的多个引线; 以及连接到引线框的金属接地片。还公开了其它装置和方法。

5. 发明授权

US5376909A Device packaging 失效
标题翻译：设备包装
公开(公告)号：US5376909A
公开(公告)日：1994-12-27
申请号：US65691
申请日：1993-05-21
申请人： Stephen R. Nelson , Buford H. Carter, Jr. , Tammy J. Lahutsky , Glen R. Haas , Dennis D. Davis , Charles W. Suckling , Glenn Collinson
发明人： Stephen R. Nelson , Buford H. Carter, Jr. , Tammy J. Lahutsky , Glen R. Haas , Dennis D. Davis , Charles W. Suckling , Glenn Collinson
IPC分类号： H01L23/04 , H01L23/02 , H01L23/12 , H01L23/433 , H01L23/495 , H01L23/66 , H01L23/28
CPC分类号： H01L23/66 , H01L23/4334 , H01L23/49541 , H01L24/49 , H01L2223/6644 , H01L2224/45144 , H01L2224/48137 , H01L2224/48247 , H01L2224/49111 , H01L2224/49171 , H01L2224/49175 , H01L24/45 , H01L24/48 , H01L2924/00014 , H01L2924/01027 , H01L2924/01031 , H01L2924/01033 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10329 , H01L2924/1305 , H01L2924/1306 , H01L2924/14 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/30107 , H01L2924/3011 , H01L2924/30111 , H01L2924/3025
摘要： This is a package [10] for an rf device [11] operable with a characteristic impedance providing a plurality of terminals [12-19] and [101] for effecting circuit connections to the device, the connection between at least one of the terminals and the device being matched in relation to the characteristic impedance. Other devices and methods are also disclosed.
摘要翻译：这是一种可用于具有提供多个终端[12-19]和[101]的特征阻抗的射频设备[11]的封装[10]，用于实现到该设备的电路连接，至少一个终端并且该器件相对于特性阻抗匹配。还公开了其它装置和方法。

6. 发明授权

US5170139A PIN diode switch 失效
标题翻译： PIN二极管开关
公开(公告)号：US5170139A
公开(公告)日：1992-12-08
申请号：US801330
申请日：1991-12-02
申请人： Stephen R. Nelson
发明人： Stephen R. Nelson
IPC分类号： H01P1/15 , H03K17/76
CPC分类号： H01P1/15 , H03K17/76
摘要： This is a monolithic PIN diode switch circuit. The switch comprises: input ports, output ports, bias nodes and PIN diodes. Each port or node is connected to receive a bias signal. Preferably the PIN diodes are fabricated from GaAs or other III-V compound. This monolithic PIN diode switch offers broader band performance and smaller size. Other methods and devices are disclosed.
摘要翻译：这是一个单片PIN二极管开关电路。开关包括：输入端口，输出端口，偏置节点和PIN二极管。每个端口或节点被连接以接收偏置信号。优选地，PIN二极管由GaAs或其他III-V化合物制造。该单片PIN二极管开关提供更宽的频带性能和更小的尺寸。公开了其它方法和装置。

7. 发明授权

US5159296A Four port monolithic GaAs pin diode switch 失效
标题翻译：四端口单片GAAS PIN二极管开关
公开(公告)号：US5159296A
公开(公告)日：1992-10-27
申请号：US676649
申请日：1991-03-28
申请人： Stephen R. Nelson
发明人： Stephen R. Nelson
IPC分类号： H01L29/861 , H01P1/15 , H03K17/76
CPC分类号： H03K17/76 , H01P1/15
摘要： This is a monolithic PIN diode switch circuit. The switch comprises: input ports, output ports, bias nodes and PIN diodes. Each port or node is connected to receive a bias signal. Preferably the PIN diodes are fabricated from GaAs or other III-V compounds. This monolithic PIN diode switch offers broader band performance and smaller size. Other methods and devices are disclosed.

8. 发明授权

US06545543B2 Small aspect ratio MMIC power amplifier layout 失效
标题翻译：小宽高比MMIC功率放大器布局
公开(公告)号：US06545543B2
公开(公告)日：2003-04-08
申请号：US09900562
申请日：2001-07-06
申请人： Stephen R. Nelson
发明人： Stephen R. Nelson
IPC分类号： H03F314
CPC分类号： H01L27/088 , H01L27/0207 , H01L2224/49111 , H01L2924/01055 , H01L2924/12032 , H01L2924/13063 , H01L2924/14 , H01L2924/1423 , H01L2924/00
摘要： A small aspect ratio, high power MMIC amplifier is disclosed. The small aspect ratio MMIC amplifier is capable of achieving the same power levels as conventional power amplifier designs, but with an aspect ratio of near 1:1, versus 4:1 of conventional power amplifiers. The small aspect ratio MMIC amplifier layout uses two different types of FETs, with all gate fingers of both types of FETs running in the same direction. One type of FET is a conventional FET, in which the gate stripes run parallel to the direction of the output. In the conventional FET, the gate manifold and the drain manifold both generally extend in the x-direction (parallel to each other). The other type of FET has gate fingers that run perpendicular to the direction of the output. In this other type of FET, the gate manifold generally extends in the x-direction, while the drain manifold generally extends in the y-direction (perpendicular to each other). By using two different types of FETs, large gate width power FETs can be placed on two, three or four sides of the MMIC.
摘要翻译：公开了一种小尺寸比的高功率MMIC放大器。小尺寸比MMIC放大器能够实现与传统功率放大器设计相同的功率水平，但是与常规功率放大器相比，其纵横比接近1：1，而4：1。小尺寸比MMIC放大器布局使用两种不同类型的FET，两种类型的FET的所有栅极指针在相同方向上运行。一种类型的FET是常规FET，其中栅极条平行于输出的方向延伸。在传统的FET中，门歧管和排水歧管两者通常在x方向（彼此平行）延伸。另一种类型的FET具有垂直于输出方向延伸的栅极指状物。在这种其他类型的FET中，门歧管通常在x方向上延伸，而排水歧管通常沿y方向（彼此垂直）延伸。通过使用两种不同类型的FET，可以将大栅极宽度功率FET放置在MMIC的两侧，三侧或四侧。

9. 发明授权

US5009772A Solvent extraction process 失效
标题翻译：溶剂萃取工艺
公开(公告)号：US5009772A
公开(公告)日：1991-04-23
申请号：US315489
申请日：1989-02-27
申请人： Stephen R. Nelson , Richard L. Hood
发明人： Stephen R. Nelson , Richard L. Hood
IPC分类号： C10G21/00 , C10G53/06
CPC分类号： C10G53/06 , C10G21/003
摘要： A solvent extraction process for separating a heavy hydrocarbon feedstock material into its various component parts. The process comprises the utilization of pressure reduction to enhance the separation and recovery of a deasphalted oil product comprising substantially the lower molecular weight hydrocarbon components present in the original heavy hydrocarbon feedstock material.
摘要翻译：用于将重质烃原料分离成其各种组分部分的溶剂萃取方法。该方法包括利用减压来增强脱沥青油产品的分离和回收，所述脱沥青油产品基本上包含存在于原始重质烃原料中的较低分子量烃成分。

10. 发明授权

US4502944A Fractionation of heavy hydrocarbon process material 失效
标题翻译：重烃工艺材料的分馏
公开(公告)号：US4502944A
公开(公告)日：1985-03-05
申请号：US424290
申请日：1982-09-27
申请人： Stephen R. Nelson
发明人： Stephen R. Nelson
IPC分类号： C10G21/00 , C10G21/28 , C10C1/18 , C10C3/08
CPC分类号： C10G21/003 , C10G21/28
摘要： A method of separating a process material comprising oils, resins and asphaltenes into at least three fractions. The process material is mixed in a mixing zone with a solvent selected from the group consisting of paraffinic hydrocarbons having between about 3 and about 8 carbon atoms. The process material-solvent mixture is introduced into a first separation zone to form an asphaltene-rich first heavy fraction and a resin-rich intermediate fraction, separated by a first liquid-liquid interface, and to form a first light fraction, rich in solvent and oils, separated from the intermediate fraction by a second liquid-liquid interface.The first heavy fraction and the intermediate fraction are withdrawn from the first separation zone. The first light fraction is introduced into a second separation zone to separate a second heavy fraction, rich in oils, and a second light fraction, rich in solvent.
摘要翻译：将包含油，树脂和沥青质的工艺材料分离成至少三个部分的方法。该工艺材料在混合区中与选自具有约3至约8个碳原子的链烷烃的溶剂混合。将处理材料 - 溶剂混合物引入第一分离区以形成富含沥青质的第一重质馏分和富含树脂的中间馏分，通过第一液 - 液界面分离，并形成富含溶剂的第一轻馏分和通过第二液 - 液界面与中间馏分分离的油。第一重馏分和中间馏分从第一分离区排出。将第一轻馏分引入第二分离区以分离富含油的第二重馏分和富含溶剂的第二轻馏分。

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