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1. 发明授权

US08476644B2 Optoelectronic component and method for the manufacture of a plurality of optoelectronic components 有权
标题翻译：用于制造多个光电子部件的光电子部件和方法
公开(公告)号：US08476644B2
公开(公告)日：2013-07-02
申请号：US12597682
申请日：2008-04-25
申请人： Stefan Illek , Andreas Ploessl , Alexander Heindl , Patrick Rode , Dieter Eissler
发明人： Stefan Illek , Andreas Ploessl , Alexander Heindl , Patrick Rode , Dieter Eissler
IPC分类号： H01L27/15 , H01L33/00 , H01L21/00
CPC分类号： H01L33/382 , H01L33/20 , H01L33/46 , H01L33/505 , H01L2924/0002 , H01L2924/00
摘要： An optoelectronic component with a semiconductor body includes an active region suitable for generating radiation, and two electrical contacts arranged on the semiconductor body. The contacts are electrically connected to the active region. The contacts each have a connecting face that faces away from the semiconductor body. The contact faces are located on a connection side of the component and a side of the component that is different from the connection side is mirror-coated. A method for the manufacture of multiple components of this sort is also disclosed.
摘要翻译：具有半导体本体的光电子部件包括适于产生辐射的有源区和布置在半导体本体上的两个电触头。触头电连接到有源区。触点各自具有面向远离半导体主体的连接面。接触面位于部件的连接侧，并且与连接侧不同的部件的一侧被镜面涂覆。还公开了用于制造这种多个部件的方法。

2. 发明申请

US20100117111A1 Optoelectronic Component and Method for the Manufacture of a Plurality of Optoelectronic Components 有权
标题翻译：用于制造多种光电子元件的光电元件和方法
公开(公告)号：US20100117111A1
公开(公告)日：2010-05-13
申请号：US12597682
申请日：2008-04-25
申请人： Stefan Illek , Andreas Ploessl , Alexander Heindl , Patrick Rode , Dieter Eissler
发明人： Stefan Illek , Andreas Ploessl , Alexander Heindl , Patrick Rode , Dieter Eissler
IPC分类号： H01L33/00
CPC分类号： H01L33/382 , H01L33/20 , H01L33/46 , H01L33/505 , H01L2924/0002 , H01L2924/00
摘要： An optoelectronic component with a semiconductor body includes an active region suitable for generating radiation, and two electrical contacts arranged on the semiconductor body. The contacts are electrically connected to the active region. The contacts each have a connecting face that faces away from the semiconductor body. The contact faces are located on a connection side of the component and a side of the component that is different from the connection side is mirror-coated. A method for the manufacture of multiple components of this sort is also disclosed.
摘要翻译：具有半导体本体的光电子部件包括适于产生辐射的有源区和布置在半导体本体上的两个电触头。触头电连接到有源区。触点各自具有面向远离半导体主体的连接面。接触面位于部件的连接侧，并且与连接侧不同的部件的一侧被镜面涂覆。还公开了用于制造这种多个部件的方法。

3. 发明授权

US08314430B2 Optoelectronic component and method for the manufacture of a plurality of optoelectronic components 有权
公开(公告)号：US08314430B2
公开(公告)日：2012-11-20
申请号：US12597682
申请日：2008-04-25
申请人： Stefan Illek , Andreas Ploessl , Alexander Heindl , Patrick Rode , Dieter Eissler
发明人： Stefan Illek , Andreas Ploessl , Alexander Heindl , Patrick Rode , Dieter Eissler
IPC分类号： H01L27/15 , H01L33/00 , H01L21/00
摘要： An optoelectronic component with a semiconductor body includes an active region suitable for generating radiation, and two electrical contacts arranged on the semiconductor body. The contacts are electrically connected to the active region. The contacts each have a connecting face that faces away from the semiconductor body. The contact faces are located on a connection side of the component and a side of the component that is different from the connection side is mirror-coated. A method for the manufacture of multiple components of this sort is also disclosed.

4. 发明申请

US20130043496A1 LIGHTING DEVICE 有权
标题翻译：照明设备
公开(公告)号：US20130043496A1
公开(公告)日：2013-02-21
申请号：US13522508
申请日：2011-01-17
申请人： Matthias Sabathil , Norwin von Malm , Lutz Hoeppel , Stefan Illek , Bernd Barchmann , Patrick Rode
发明人： Matthias Sabathil , Norwin von Malm , Lutz Hoeppel , Stefan Illek , Bernd Barchmann , Patrick Rode
IPC分类号： H01L33/08
CPC分类号： H01L25/0753 , H01L33/22 , H01L33/507 , H01L33/58 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A lighting device with front carrier, rear carrier and plurality of light-emitting diode chips, which when in operation emits light and releases waste heat, wherein rear carrier is covered at least in selected locations by front carrier, light-emitting diode chips are arranged between rear carrier and front carrier to form array, light-emitting diodes are contacted electrically by rear and/or front carrier and immobilized mechanically by rear carrier and front carrier, front carrier is coupled thermally conductively to light-emitting diode chips and includes light outcoupling face remote from light-emitting diode chips, which light outcoupling face releases some of waste heat released by light-emitting diode chips into surrounding environment, each light-emitting diode chip is actuated with electrical nominal power of 100 mW or less when lighting device is in operation and has light yield of 100 lm/W or more.
摘要翻译：一种具有前载体，后载体和多个发光二极管芯片的照明装置，其在运行时发光并释放废热，其中后载体至少在前载体上被选定的位置覆盖，发光二极管芯片布置在后载体和前载体之间形成阵列，发光二极管由后和/或前载体电接触并由后载体和前载体机械固定，前载体热传导耦合到发光二极管芯片，并且包括光输出耦合面对远离发光二极管芯片的光输出耦合面将发光二极管芯片释放的一部分废热释放到周围环境中，当发光二极管芯片的照明装置为100mW或更小时，每个发光二极管芯片的功率为100mW 具有100 lm / W以上的光收率。

5. 发明授权

US09029878B2 Lighting device 有权
标题翻译：照明设备
公开(公告)号：US09029878B2
公开(公告)日：2015-05-12
申请号：US13522508
申请日：2011-01-17
申请人： Matthias Sabathil , Norwin von Malm , Lutz Hoeppel , Stefan Illek , Bernd Barchmann , Patrick Rode
发明人： Matthias Sabathil , Norwin von Malm , Lutz Hoeppel , Stefan Illek , Bernd Barchmann , Patrick Rode
IPC分类号： H01L33/08 , H01L25/075 , H01L33/22 , H01L33/50 , H01L33/58 , H01L33/62
CPC分类号： H01L25/0753 , H01L33/22 , H01L33/507 , H01L33/58 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A lighting device with front carrier, rear carrier and plurality of light-emitting diode chips, which when in operation emits light and releases waste heat, wherein rear carrier is covered at least in selected locations by front carrier, light-emitting diode chips are arranged between rear carrier and front carrier to form array, light-emitting diodes are contacted electrically by rear and/or front carrier and immobilized mechanically by rear carrier and front carrier, front carrier is coupled thermally conductively to light-emitting diode chips and includes light outcoupling face remote from light-emitting diode chips, which light outcoupling face releases some of waste heat released by light-emitting diode chips into surrounding environment, each light-emitting diode chip is actuated with electrical nominal power of 100 mW or less when lighting device is in operation and has light yield of 100 lm/W or more.
摘要翻译：一种具有前载体，后载体和多个发光二极管芯片的照明装置，其在运行时发光并释放废热，其中后载体至少在前载体上被选定的位置覆盖，发光二极管芯片布置在后载体和前载体之间形成阵列，发光二极管由后和/或前载体电接触并由后载体和前载体机械固定，前载体热传导耦合到发光二极管芯片，并且包括光输出耦合面对远离发光二极管芯片的光输出耦合面将发光二极管芯片释放的一部分废热释放到周围环境中，当发光二极管芯片的照明装置为100mW或更小时，每个发光二极管芯片的功率为100mW 具有100 lm / W以上的光收率。

6. 发明授权

US08569079B2 Method for producing an optoelectronic semiconductor component 有权
标题翻译：光电半导体元件的制造方法
公开(公告)号：US08569079B2
公开(公告)日：2013-10-29
申请号：US13322662
申请日：2010-05-03
申请人： Elmar Baur , Alexander Heindl , Bernd Bohm , Patrick Rode , Heribert Zull
发明人： Elmar Baur , Alexander Heindl , Bernd Bohm , Patrick Rode , Heribert Zull
IPC分类号： H01L21/00
CPC分类号： H01L33/22 , B82Y10/00 , B82Y40/00 , G03F7/0002 , H01L33/005 , H01L33/20
摘要： A method for producing an optoelectronic semiconductor component includes providing a first wafer having a patterned surface, wherein the patterned surface is formed at least in places by elevations having first and second heights, wherein the first height is greater than the second height; providing a second wafer; applying a photoresist to outer areas of the second wafer; patterning a surface of the photoresist facing away from the second wafer by impressing the patterned surface of the first wafer into the photoresist, wherein the elevations are impressed as trenches having a first and second depth into the photoresist; applying a patterning method to the patterned surface of the photoresist, wherein the structure applied on the photoresist is transferred at least in places to the outer area of the second wafer.
摘要翻译：一种用于制造光电子半导体部件的方法包括提供具有图案化表面的第一晶片，其中所述图案化表面至少在具有第一和第二高度的高度的位置形成，其中所述第一高度大于所述第二高度; 提供第二晶片; 将光致抗蚀剂施加到第二晶片的外部区域; 通过将第一晶片的图案化表面压印到光致抗蚀剂中，将光致抗蚀剂的表面图案化为远离第二晶片，其中，将高度作为具有第一和第二深度的沟槽印刷到光致抗蚀剂中; 将图案化方法应用于光致抗蚀剂的图案化表面，其中施加在光致抗蚀剂上的结构至少在第二晶片的外部区域被转移。

7. 发明申请

US20120032306A1 Method for Patterning a Semiconductor Surface, and Semiconductor Chip 审中-公开
标题翻译：半导体表面图案化方法和半导体芯片
公开(公告)号：US20120032306A1
公开(公告)日：2012-02-09
申请号：US13148631
申请日：2010-01-22
申请人： Elmar Baur , Bernd Böhm , Alexander Heindl , Patrick Rode , Matthias Sabathil
发明人： Elmar Baur , Bernd Böhm , Alexander Heindl , Patrick Rode , Matthias Sabathil
IPC分类号： H01L29/12 , H01L21/312
CPC分类号： H01L33/22 , H01L33/0062
摘要： A method for patterning a semiconductor surface is specified. A photoresist is applied to an outer area of a second semiconductor wafer. A surface of the photoresist that is remote from the second semiconductor wafer is patterned by impressing a patterned surface of the first wafer into the photoresist. A patterning method is applied to the surface of the photoresist, wherein a structure applied on the photoresist is transferred at least in places to the outer area of the second semiconductor wafer.
摘要翻译：规定了图案化半导体表面的方法。光致抗蚀剂被施加到第二半导体晶片的外部区域。通过将第一晶片的图案化表面压印到光致抗蚀剂中，使光刻胶远离第二半导体晶片的表面被图案化。将图案化方法应用于光致抗蚀剂的表面，其中施加在光致抗蚀剂上的结构至少在第二半导体晶片的外部区域被转移。

8. 发明申请

US20120070927A1 METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR COMPONENT 有权
标题翻译：生产光电半导体元件的方法
公开(公告)号：US20120070927A1
公开(公告)日：2012-03-22
申请号：US13322662
申请日：2010-05-03
申请人： Elmar Baur , Alexander Heindl , Bernd Böhm , Patrick Rode , Heribert Zull
发明人： Elmar Baur , Alexander Heindl , Bernd Böhm , Patrick Rode , Heribert Zull
IPC分类号： H01L33/48
CPC分类号： H01L33/22 , B82Y10/00 , B82Y40/00 , G03F7/0002 , H01L33/005 , H01L33/20
摘要： A method for producing an optoelectronic semiconductor component includes providing a first wafer having a patterned surface, wherein the patterned surface is formed at least in places by elevations having first and second heights, wherein the first height is greater than the second height; providing a second wafer; applying a photoresist to outer areas of the second wafer; patterning a surface of the photoresist facing away from the second wafer by impressing the patterned surface of the first wafer into the photoresist, wherein the elevations are impressed as trenches having a first and second depth into the photoresist; applying a patterning method to the patterned surface of the photoresist, wherein the structure applied on the photoresist is transferred at least in places to the outer area of the second wafer.
摘要翻译：一种用于制造光电子半导体部件的方法包括提供具有图案化表面的第一晶片，其中所述图案化表面至少在具有第一和第二高度的高度的位置形成，其中所述第一高度大于所述第二高度; 提供第二晶片; 将光致抗蚀剂施加到第二晶片的外部区域; 通过将第一晶片的图案化表面压印到光致抗蚀剂中，将光致抗蚀剂的表面图案化为远离第二晶片，其中，将高度作为具有第一和第二深度的沟槽印刷到光致抗蚀剂中; 将图案化方法应用于光致抗蚀剂的图案化表面，其中施加在光致抗蚀剂上的结构至少在第二晶片的外部区域被转移。

9. 发明申请

US20130200432A1 SEMICONDUCTOR COMPONENT, SUBSTRATE AND METHOD FOR PRODUCING A SEMICONDUCTOR LAYER SEQUENCE 审中-公开
标题翻译：半导体元件，基板和制造半导体层序列的方法
公开(公告)号：US20130200432A1
公开(公告)日：2013-08-08
申请号：US13809642
申请日：2011-07-07
申请人： Peter Stauß , Patrick Rode , Philipp Drechsel
发明人： Peter Stauß , Patrick Rode , Philipp Drechsel
IPC分类号： H01L21/36 , H01L29/267
CPC分类号： H01L29/267 , C30B25/18 , C30B29/403 , H01L21/02381 , H01L21/02433 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L33/007 , H01L33/0079 , H01L33/02 , H01L33/382
摘要： A semiconductor component includes a semiconductor body based on a nitride compound semiconductor material, and a substrate on which the semiconductor body is arranged, wherein impurities are formed in the substrate in a targeted manner.
摘要翻译：半导体部件包括基于氮化物化合物半导体材料的半导体本体，以及配置有半导体主体的基板，以目标方式在基板上形成杂质。

10. 发明申请

US20110104836A1 METHOD FOR PRODUCING AN OPTOELECTRONIC COMPONENT AND OPTOELECTRONIC COMPONENT 有权
标题翻译：用于生产光电元件和光电元件的方法
公开(公告)号：US20110104836A1
公开(公告)日：2011-05-05
申请号：US12990243
申请日：2009-06-09
申请人： Patrick Rode , Martin Strassburg , Karl Engl , Lutz Höppel
发明人： Patrick Rode , Martin Strassburg , Karl Engl , Lutz Höppel
IPC分类号： H01L33/00
CPC分类号： H01L33/382 , H01L33/007 , H01L33/0079 , H01L33/14 , H01L33/22 , H01L33/62 , H01L2224/48
摘要： In a method for producing an optoelectronic component, a growth substrate having a first coefficient of thermal expansion is provided. A multilayered buffer layer sequence is applied thereto. A layer sequence having a second coefficient of thermal expansion—different than the first coefficient of thermal expansion—is subsequently deposited epitaxially. It furthermore comprises an active layer for emitting electromagnetic radiation. A carrier substrate is subsequently applied on the epitaxially deposited layer sequence. The growth substrate is removed and the multilayered buffer layer sequence is structured in order to increase a coupling-out of electromagnetic radiation. Finally, contact is made with the epitaxially deposited layer sequence.
摘要翻译：在制造光电子部件的方法中，提供具有第一热膨胀系数的生长衬底。向其施加多层缓冲层序列。随后沉积具有不同于第一热膨胀系数的第二热膨胀系数的层序列。它还包括用于发射电磁辐射的有源层。随后将载体衬底施加在外延沉积层序列上。去除生长衬底，并且构造多层缓冲层序列以增加电磁辐射的耦合。最后，用外延沉积层序列进行接触。

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