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1. 发明申请

US20130313604A1 Method for Producing a Light-Emitting Semiconductor Component and Light-Emitting Semiconductor Component 审中-公开
标题翻译：产生发光半导体元件和发光半导体元件的方法
公开(公告)号：US20130313604A1
公开(公告)日：2013-11-28
申请号：US13991135
申请日：2012-04-11
申请人： Karl Engl , Richard Baisl , Tilman Schlenker , Lutz Hoeppel , Sebastian Taeger , Christian Gaertner
发明人： Karl Engl , Richard Baisl , Tilman Schlenker , Lutz Hoeppel , Sebastian Taeger , Christian Gaertner
IPC分类号： H01L33/52 , H01L33/60
CPC分类号： H01L33/52 , H01L33/44 , H01L33/60 , H01L33/62 , H01L2224/32225 , H01L2224/48091 , H01L2933/0025 , H01L2924/00014
摘要： A method for producing a light-emitting semiconductor component is specified. A light-emitting semiconductor chip is arranged on a mounting area of a carrier. The semiconductor chip is electrically connected to electrical contact regions on the mounting area. An encapsulation layer is applied to the semiconductor chip by means of atomic layer deposition. All surfaces of the semiconductor chip which are free after mounting and electrical connection are covered with an encapsulation layer. Furthermore, a light-emitting semiconductor component is specified.
摘要翻译：规定了发光半导体元件的制造方法。发光半导体芯片布置在载体的安装区域上。半导体芯片电连接到安装区域上的电接触区域。通过原子层沉积将封装层施加到半导体芯片。半导体芯片的安装和电连接后的所有表面都被封装层覆盖。此外，规定了发光半导体元件。

2. 发明授权

US08530923B2 LED chip 有权
标题翻译： LED芯片
公开(公告)号：US08530923B2
公开(公告)日：2013-09-10
申请号：US12922830
申请日：2009-04-28
申请人： Matthias Sabathil , Lutz Hoeppel , Andreas Weimar , Karl Engl , Johannes Baur
发明人： Matthias Sabathil , Lutz Hoeppel , Andreas Weimar , Karl Engl , Johannes Baur
IPC分类号： H01L33/38
CPC分类号： H01L33/387 , H01L33/42 , H01L33/46 , H01L33/641 , H01L33/642 , H01L2924/0002 , H01L2924/00
摘要： A light-emitting diode chip (1) with a semiconductor layer sequence (2) is described, which is contacted electrically by contacts (5) via a current spreading layer (3). The contacts (5) cover around 1%-8% of the surface of the semiconductor layer sequence (2). The contacts (5) consist for example of separate contact points (51), which are arranged at the nodes of a regular grid (52) with a grid constant of 12 μm. The current spreading layer (3) contains for example indium-tin oxide, indium-zinc oxide or zinc oxide and has a thickness in the range from 15 nm to 60 nm.
摘要翻译：描述了具有半导体层序列（2）的发光二极管芯片（1），其经由电流扩展层（3）由触点（5）电接触。触点（5）覆盖半导体层序列（2）的表面的约1％-8％。触点（5）例如由单独的接触点（51）组成，它们布置在栅格常数为12μm的规则网格（52）的节点处。电流扩展层（3）包含例如氧化铟锡，氧化铟锌或氧化锌，其厚度在15nm至60nm的范围内。

3. 发明申请

US20130043496A1 LIGHTING DEVICE 有权
标题翻译：照明设备
公开(公告)号：US20130043496A1
公开(公告)日：2013-02-21
申请号：US13522508
申请日：2011-01-17
申请人： Matthias Sabathil , Norwin von Malm , Lutz Hoeppel , Stefan Illek , Bernd Barchmann , Patrick Rode
发明人： Matthias Sabathil , Norwin von Malm , Lutz Hoeppel , Stefan Illek , Bernd Barchmann , Patrick Rode
IPC分类号： H01L33/08
CPC分类号： H01L25/0753 , H01L33/22 , H01L33/507 , H01L33/58 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A lighting device with front carrier, rear carrier and plurality of light-emitting diode chips, which when in operation emits light and releases waste heat, wherein rear carrier is covered at least in selected locations by front carrier, light-emitting diode chips are arranged between rear carrier and front carrier to form array, light-emitting diodes are contacted electrically by rear and/or front carrier and immobilized mechanically by rear carrier and front carrier, front carrier is coupled thermally conductively to light-emitting diode chips and includes light outcoupling face remote from light-emitting diode chips, which light outcoupling face releases some of waste heat released by light-emitting diode chips into surrounding environment, each light-emitting diode chip is actuated with electrical nominal power of 100 mW or less when lighting device is in operation and has light yield of 100 lm/W or more.
摘要翻译：一种具有前载体，后载体和多个发光二极管芯片的照明装置，其在运行时发光并释放废热，其中后载体至少在前载体上被选定的位置覆盖，发光二极管芯片布置在后载体和前载体之间形成阵列，发光二极管由后和/或前载体电接触并由后载体和前载体机械固定，前载体热传导耦合到发光二极管芯片，并且包括光输出耦合面对远离发光二极管芯片的光输出耦合面将发光二极管芯片释放的一部分废热释放到周围环境中，当发光二极管芯片的照明装置为100mW或更小时，每个发光二极管芯片的功率为100mW 具有100 lm / W以上的光收率。

4. 发明申请

US20110316028A1 Optoelectronic Semiconductor Component 有权
标题翻译：光电半导体元件
公开(公告)号：US20110316028A1
公开(公告)日：2011-12-29
申请号：US13124707
申请日：2009-09-16
申请人： Martin Strassburg , Lutz Hoeppel , Matthias Peter , Ulrich Zehnder , Tetsuya Taki , Andreas Leber , Rainer Butendeich , Thomas Bauer
发明人： Martin Strassburg , Lutz Hoeppel , Matthias Peter , Ulrich Zehnder , Tetsuya Taki , Andreas Leber , Rainer Butendeich , Thomas Bauer
IPC分类号： H01L33/60
CPC分类号： H01L33/40 , H01L2924/0002 , H01L2924/00
摘要： An optoelectronic semiconductor component comprising a semiconductor layer sequence (3) based on a nitride compound semiconductor and containing an n-doped region (4), a p-doped region (8) and an active zone (5) arranged between the n-doped region (4) and the p-doped region (8) is specified. The p-doped region (8) comprises a p-type contact layer (7) composed of InxAlyGa1-x-yN where 0≦x≦1, 0≦y≦1 and x+y≦1. The p-type contact layer (7) adjoins a connection layer (9) composed of a metal, a metal alloy or a transparent conductive oxide, wherein the p-type contact layer (7) has first domains (1) having a Ga-face orientation and second domains (2) having an N-face orientation at an interface with the connection layer (9).
摘要翻译：一种光电子半导体部件，包括基于氮化物化合物半导体的半导体层序列（3），并且包含n掺杂区域（4），p掺杂区域（8）和有源区域（5）区域（4）和p掺杂区域（8）。 p掺杂区域（8）包括由In x Al y Ga 1-x-y N组成的p型接触层（7），其中0和nlE; x和nlE; 1,0和nlE; y和nlE; 1和x + y和nlE; 1。 p型接触层（7）与由金属，金属合金或透明导电氧化物构成的连接层（9）相邻，其中p型接触层（7）具有第一畴（1）面取向和在与连接层（9）的界面处具有N面取向的第二域（2）。

5. 发明申请

US20110284893A1 Optoelectronic Semiconductor Chip 有权
标题翻译：光电半导体芯片
公开(公告)号：US20110284893A1
公开(公告)日：2011-11-24
申请号：US13056589
申请日：2009-06-29
申请人： Lutz Hoeppel , Matthias Sabathil
发明人： Lutz Hoeppel , Matthias Sabathil
IPC分类号： H01L33/60
CPC分类号： H01L33/387 , H01L33/405 , H01L33/42 , H01L2924/0002 , H01L2924/00
摘要： A description is given of an optoelectronic semiconductor chip (1) comprising a semiconductor layer sequence (2), which has an active zone (4) for generating electromagnetic radiation, and comprising a structured current spreading layer (6), which contains a transparent conductive oxide and is arranged on a main area (12) of the semiconductor layer sequence (2), wherein the current spreading layer (6) covers at least 30% and at most 60% of the main area (12).
摘要翻译：给出了包括半导体层序列（2）的光电子半导体芯片（1）的描述，该半导体层序列（2）具有用于产生电磁辐射的有源区（4），并且包括结构化电流扩散层（6），其包含透明导电并且布置在半导体层序列（2）的主区域（12）上，其中电流扩展层（6）覆盖主区域（12）的至少30％且至多60％。

6. 发明申请

US20110114988A1 Led Chip 有权
标题翻译： LED芯片
公开(公告)号：US20110114988A1
公开(公告)日：2011-05-19
申请号：US12922830
申请日：2009-04-28
申请人： Matthias Sabathil , Lutz Hoeppel , Andreas Weimar , Karl Engl , Johannes Baur
发明人： Matthias Sabathil , Lutz Hoeppel , Andreas Weimar , Karl Engl , Johannes Baur
IPC分类号： H01L33/38
CPC分类号： H01L33/387 , H01L33/42 , H01L33/46 , H01L33/641 , H01L33/642 , H01L2924/0002 , H01L2924/00
摘要： A light-emitting diode chip (1) with a semiconductor layer sequence (2) is described, which is contacted electrically by contacts (5) via a current spreading layer (3). The contacts (5) cover around 1%-8% of the surface of the semiconductor layer sequence (2). The contacts (5) consist for example of separate contact points (51), which are arranged at the nodes of a regular grid (52) with a grid constant of 12 μm. The current spreading layer (3) contains for example indium-tin oxide, indium-zinc oxide or zinc oxide and has a thickness in the range from 15 nm to 60 nm.
摘要翻译：描述了具有半导体层序列（2）的发光二极管芯片（1），其经由电流扩展层（3）由触点（5）电接触。触点（5）覆盖半导体层序列（2）的表面的约1％-8％。触点（5）例如分开接触点（51），它们布置在格子常数为12μm的规则网格（52）的节点处。电流扩展层（3）包含例如氧化铟锡，氧化铟锌或氧化锌，其厚度在15nm至60nm的范围内。

7. 发明授权

US08841685B2 Optoelectronic semiconductor chip 有权
标题翻译：光电半导体芯片
公开(公告)号：US08841685B2
公开(公告)日：2014-09-23
申请号：US13056589
申请日：2009-06-29
申请人： Lutz Hoeppel , Matthias Sabathil
发明人： Lutz Hoeppel , Matthias Sabathil
IPC分类号： H01L33/00 , H01L33/38 , H01L33/42 , H01L33/40
CPC分类号： H01L33/387 , H01L33/405 , H01L33/42 , H01L2924/0002 , H01L2924/00
摘要： A description is given of an optoelectronic semiconductor chip (1) comprising a semiconductor layer sequence (2), which has an active zone (4) for generating electromagnetic radiation, and comprising a structured current spreading layer (6), which contains a transparent conductive oxide and is arranged on a main area (12) of the semiconductor layer sequence (2), wherein the current spreading layer (6) covers at least 30% and at most 60% of the main area (12).
摘要翻译：给出了包括半导体层序列（2）的光电子半导体芯片（1）的描述，该半导体层序列（2）具有用于产生电磁辐射的有源区（4），并且包括结构化电流扩散层（6），其包含透明导电并且布置在半导体层序列（2）的主区域（12）上，其中电流扩展层（6）覆盖主区域（12）的至少30％且至多60％。

8. 发明授权

US08823024B2 Optoelectronic semiconductor body and method for the production thereof 有权
标题翻译：光电半导体体及其制造方法
公开(公告)号：US08823024B2
公开(公告)日：2014-09-02
申请号：US12920313
申请日：2009-02-25
申请人： Karl Engl , Patrick Rode , Lutz Hoeppel , Martin Strassburg
发明人： Karl Engl , Patrick Rode , Lutz Hoeppel , Martin Strassburg
IPC分类号： H01L29/207
CPC分类号： H01L27/156 , H01L25/0753 , H01L33/0079 , H01L33/382 , H01L33/62 , H01L2224/48091 , H01L2924/00014
摘要： An optoelectronic semiconductor body comprises a substantially planar semiconductor layer sequence having a first and a second main side, which has an active layer suitable for generating electromagnetic radiation. Furthermore, the semiconductor body comprises at least one trench that severs the active layer of the semiconductor layer sequence and serves for subdividing the active of the semiconductor layer sequence into at least two electrically insulated active partial layers. A first and second connection layer arranged on a second main side serve for making contact with the active partial layers. In this case, the first and second connection layers for making contact with the at least two active partial layers are electrically conductively connected to one another in such a way that the active partial layers form a series circuit.
摘要翻译：光电子半导体本体包括具有第一和第二主侧的基本上平面的半导体层序列，其具有适于产生电磁辐射的有源层。此外，半导体本体包括至少一个沟槽，其切断半导体层序列的有源层并且用于将半导体层序列的有源分为至少两个电绝缘的有源部分层。布置在第二主侧上的第一和第二连接层用于与活性部分层接触。在这种情况下，用于与至少两个有源部分层接触的第一和第二连接层彼此导电连接，使得有源部分层形成串联电路。

9. 发明授权

US08598596B2 Method for producing an optoelectronic semiconductor chip and optoelectronic semiconductor chip 有权
标题翻译：光电子半导体芯片和光电子半导体芯片的制造方法
公开(公告)号：US08598596B2
公开(公告)日：2013-12-03
申请号：US13128050
申请日：2009-10-12
申请人： Vincent Grolier , Lutz Hoeppel , Hans-Jürgen Lugauer , Martin Strassburg , Andreas Biebersdorf
发明人： Vincent Grolier , Lutz Hoeppel , Hans-Jürgen Lugauer , Martin Strassburg , Andreas Biebersdorf
IPC分类号： H01L21/02
CPC分类号： H01L33/0095 , H01L33/16 , H01L33/325 , H01L2924/0002 , H01L2924/00
摘要： An optoelectronic semiconductor chip includes a semiconductor layer sequence having at least one doped functional layer having at least one dopant and at least one codopant, wherein the semiconductor layer sequence includes a semiconductor material having a lattice structure, one selected from the dopant and the codopant is an electron acceptor and the other an electron donor, the codopant is bonded to the semiconductor material and/or arranged at interstitial sites, and the codopant at least partly forms no bonding complexes with the dopant.
摘要翻译：光电子半导体芯片包括具有至少一个具有至少一种掺杂剂和至少一种掺杂剂的掺杂功能层的半导体层序列，其中半导体层序列包括具有晶格结构的半导体材料，一种选自掺杂剂和共掺杂剂电子受体和另一个电子供体，共掺杂剂结合到半导体材料和/或排列在间隙位置，并且共掺杂剂至少部分地不与掺杂剂形成键合复合物。

10. 发明申请

US20110272728A1 Radiation-Emitting Semiconductor Chip 有权
标题翻译：辐射发射半导体芯片
公开(公告)号：US20110272728A1
公开(公告)日：2011-11-10
申请号：US12991864
申请日：2009-04-17
申请人： Patrick Rode , Lutz Hoeppel , Karl Engl , Tony Albrecht
发明人： Patrick Rode , Lutz Hoeppel , Karl Engl , Tony Albrecht
IPC分类号： H01L33/36
CPC分类号： H01L25/167 , H01L33/0079 , H01L33/382 , H01L2924/0002 , H01L2924/00
摘要： A radiation-emitting semiconductor chip (1) is provided, which comprises a carrier (5), a semiconductor body (2) with a semiconductor layer sequence, a first contact (35) and a second contact (36). The semiconductor layer sequence comprises an active region (20) provided for generating radiation, which is arranged between a first semiconductor layer (21) and a second semiconductor layer (22). The carrier (5) comprises a major surface (51) facing the semiconductor body (2). The first semiconductor layer (21) is arranged on the side of the active region (20) facing the major surface (51) of the carrier (5) and is electrically contactable by means of the first contact (35). The second semiconductor layer (22) is electrically contactable by means of the second contact (36). A protection diode (4) is formed in a current path extending between the first contact (35) and the second contact (36) through the carrier (5).
摘要翻译：提供了一种辐射发射半导体芯片（1），其包括载体（5），具有半导体层序列的半导体本体（2），第一触点（35）和第二触点（36）。半导体层序列包括设置在第一半导体层（21）和第二半导体层（22）之间的用于产生辐射的有源区（20）。载体（5）包括面向半导体本体（2）的主表面（51）。第一半导体层（21）布置在与载体（5）的主表面（51）相对的有源区域（20）的侧面上，并且可通过第一触点（35）电接触。第二半导体层（22）可通过第二接触件（36）电接触。保护二极管（4）形成在通过载体（5）在第一接触件（35）和第二接触件（36）之间延伸的电流通路中。

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