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1. 发明授权

US07495949B2 Asymmetrical random access memory cell, memory comprising asymmetrical memory cells and method to operate such a memory 失效
标题翻译：不对称随机存取存储器单元，包括不对称存储单元的存储器和操作这种存储器的方法
公开(公告)号：US07495949B2
公开(公告)日：2009-02-24
申请号：US11669369
申请日：2007-01-31
申请人： Stefan Buettner , Torsten Mahnke , Wolfgang Penth , Otto Wagner
发明人： Stefan Buettner , Torsten Mahnke , Wolfgang Penth , Otto Wagner
IPC分类号： G11C11/00
CPC分类号： G11C11/412
摘要： An asymmetrical random access memory cell (1) including cross coupled inverters (2, 3) which are driven at their nodes (22, 32) by separate bit-lines (blt, blc) of a pair of complementary bit-lines, which are connected via a pass-transistors (21, 31), wherein said cross coupled inverters (2, 3) have different switching thresholds and exhibit asymmetrical physical behaviours, wherein an additional pass-transistor (4) is provided in series to one of the pass-transistors (21) between one of the nodes (22) and its dedicated bit-line (blc). Further the invention relates to a random access memory including such memory cells and to a method of operating such a memory.
摘要翻译：包括交叉耦合的反相器（2,3）的非对称随机存取存储单元（1），它们通过一对互补位线的分开的位线（blt，blc）在它们的节点（22,32）处驱动，它们是通过传输晶体管（21,31）连接，其中所述交叉耦合的反相器（2,3）具有不同的开关阈值并且表现出不对称的物理行为，其中附加的传输晶体管（4）串联地提供给一个通过 - 晶体管（21）在其中一个节点（22）和其专用位线（blc）之间。此外，本发明涉及包括这种存储器单元的随机存取存储器以及操作这种存储器的方法。

2. 发明申请

US20070189061A1 Asymmetrical Random Access Memory Cell, Memory Comprising Asymmetrical Memory Cells And Method To Operate Such A Memory 失效
标题翻译：非对称随机存取存储器单元，包含非对称存储单元的存储器和操作这样的存储器的方法
公开(公告)号：US20070189061A1
公开(公告)日：2007-08-16
申请号：US11669369
申请日：2007-01-31
申请人： Stefan Buettner , Torsten Mahnke , Wolfgang Penth , Otto Wagner
发明人： Stefan Buettner , Torsten Mahnke , Wolfgang Penth , Otto Wagner
IPC分类号： G11C11/00
CPC分类号： G11C11/412
摘要： Asymmetrical random access memory cell, memory comprising asymmetrical memory cells and method to operate such a memory The invention relates to an asymmetrical random access memory cell (1) comprising cross coupled inverters (2, 3) which are driven at their nodes (22, 32) by separate bit-lines (b1t, b1c) of a pair of complementary bit-lines, which are connected via a pass-transistors (21, 31), wherein said cross coupled inverters (2, 3) have different switching thresholds and exhibit asymmetrical physical behaviours, wherein an additional pass-transistor (4) is provided in series to one of the pass-transistors (21) between one of the nodes (22) and its dedicated bit-line (blc). Further the invention relates to a random access memory comprising such memory cells and to a method of operating such a memory.
摘要翻译：不对称随机存取存储器单元，包括不对称存储器单元的存储器和用于操作这种存储器的方法本发明涉及一种非对称随机存取存储单元（1），包括交叉耦合的反相器（2,3），它们在其节点（22,32））通过一对互补位线的分开的位线（b 1 t，b 1 c），其经由传输晶体管（21,31）连接，其中所述交叉耦合的反相器（2,3）具有不同的切换阈值并表现出不对称的物理行为，其中附加的传输晶体管（4）与节点（22）中的一个与其专用位线（blc）之间的一个传输晶体管（21）串联提供。此外，本发明涉及包括这种存储器单元的随机存取存储器以及操作这种存储器的方法。

3. 发明申请

US20070165447A1 Asymmetrical Random Access Memory Cell, A Memory Comprising Asymmetrical Memory Cells And A Method To Operate Such A Memory 有权
标题翻译：非对称随机存取存储器单元，包含不对称存储单元的存储器和一种操作这样的存储器的方法
公开(公告)号：US20070165447A1
公开(公告)日：2007-07-19
申请号：US11623443
申请日：2007-01-16
申请人： Otto Wagner , Sebastian Ehrenreich , Torsten Mahnke , Anthony Gus Aipperspach
发明人： Otto Wagner , Sebastian Ehrenreich , Torsten Mahnke , Anthony Gus Aipperspach
IPC分类号： G11C11/00
CPC分类号： G11C11/412
摘要： Asymmetrical random access memory cell (1) comprising cross coupled inverters (2, 3) which are driven at their nodes (22, 32) by separate bit-lines (blt, blc) of a pair of complementary bit-lines, which are connected via a pass-transistor (21, 31), wherein the random access memory cell is asymmetrical by means of the cross coupled inverters (2, 3) which have asymmetrically physical behaviours whereby different switching thresholds of the inverters are present, and that the pass-transistors (21, 31) are driven by separate controlled wordlines (wl, wwl). Furthermore the invention relates to a random access memory comprising a plurality of such asymmetrical random access memory cells and to a method to operate such a random access memory.
摘要翻译：非对称随机存取存储单元（1）包括交叉耦合的反相器（2,3），它们通过一对互补位线的分开的位线（blt，blc）在其节点（22,32）处被驱动，所述位线连接通过通过晶体管（21,31），其中随机存取存储单元通过具有不对称物理行为的交叉耦合反相器（2,3）不对称，从而存在逆变器的不同切换阈值，并且通过 - 晶体管（21,31）由单独的受控字线（w1，wwl）驱动。此外，本发明涉及包括多个这样的非对称随机存取存储器单元的随机存取存储器和一种操作这样的随机存取存储器的方法。

4. 发明授权

US07535750B2 Asymmetrical random access memory cell, and a memory comprising asymmetrical memory cells 有权
标题翻译：不对称随机存取存储器单元，以及包含不对称存储单元的存储器
公开(公告)号：US07535750B2
公开(公告)日：2009-05-19
申请号：US11623443
申请日：2007-01-16
申请人： Otto Wagner , Sebastian Ehrenreich , Torsten Mahnke , Anthony Gus Aipperspach
发明人： Otto Wagner , Sebastian Ehrenreich , Torsten Mahnke , Anthony Gus Aipperspach
IPC分类号： G11C11/00
CPC分类号： G11C11/412
摘要： Asymmetrical random access memory cell (1) including cross coupled inverters (2, 3) which are driven at their nodes (22, 32) by separate bit-lines (blt, blc) of a pair of complementary bit-lines, which are connected via a pass-transistor (21, 31), wherein the random access memory cell is asymmetrical by means of the cross coupled inverters (2, 3) which have asymmetrically physical behaviours whereby different switching thresholds of the inverters are present, and that the pass-transistors (21, 31) are driven by separate controlled wordlines (wl, wwl).
摘要翻译：包括交叉耦合的反相器（2,3）的不对称随机存取存储器单元（1），它们通过一对互补位线的分开的位线（blt，blc）在它们的节点（22,32）处被驱动，通过通过晶体管（21,31），其中随机存取存储单元通过具有不对称物理行为的交叉耦合反相器（2,3）不对称，从而存在逆变器的不同切换阈值，并且通过 - 晶体管（21,31）由单独的受控字线（w1，wwl）驱动。

5. 发明授权

US07595627B1 Voltage reference circuit with complementary PTAT voltage generators and method 有权
标题翻译：具有互补PTAT电压发生器和方法的电压参考电路
公开(公告)号：US07595627B1
公开(公告)日：2009-09-29
申请号：US11900993
申请日：2007-09-14
申请人： Torsten Mahnke , Stephan Drebinger , Michael Brauer
发明人： Torsten Mahnke , Stephan Drebinger , Michael Brauer
IPC分类号： G05F3/16
CPC分类号： G05F3/16
摘要： A voltage reference circuit is provided. The voltage reference circuit includes a first PTAT voltage generator and an amplifier. The first PTAT voltage generator is operable to generate a first PTAT voltage. The amplifier, which is coupled to the first PTAT voltage generator, comprises a second PTAT voltage generator that is complementary to the first PTAT voltage generator. The second PTAT voltage generator is operable to generate a second PTAT voltage. The amplifier is operable to generate a reference voltage based on the first PTAT voltage and the second PTAT voltage.
摘要翻译：提供电压参考电路。电压参考电路包括第一PTAT电压发生器和放大器。第一PTAT电压发生器可操作以产生第一PTAT电压。耦合到第一PTAT电压发生器的放大器包括与第一PTAT电压发生器互补的第二PTAT电压发生器。第二PTAT电压发生器可操作以产生第二PTAT电压。放大器可操作以基于第一PTAT电压和第二PTAT电压产生参考电压。

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