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1. 发明授权

US07572973B2 Method of making devices for solid state thermal transfer and power generation 有权
标题翻译：制造固态热转印和发电装置的方法
公开(公告)号：US07572973B2
公开(公告)日：2009-08-11
申请号：US12328788
申请日：2008-12-05
申请人： Stanton Earl Weaver, Jr. , Robert John Wojnarowski
发明人： Stanton Earl Weaver, Jr. , Robert John Wojnarowski
IPC分类号： H01L35/34 , H02N10/00
CPC分类号： H01L35/32 , Y10T156/1092
摘要： A method of making a solid state thermal transfer device includes first and second electrically conductive substrates that are positioned opposite from one another. The solid state thermal transfer device also includes a sealing layer disposed between the first and second electrically conductive substrates and a plurality of hollow structures having a conductive material, wherein the plurality of hollow structures is contained by the sealing layer between the first and second electrically conductive substrates.
摘要翻译：制造固态热转印装置的方法包括彼此相对定位的第一和第二导电基板。固态热转移装置还包括设置在第一和第二导电基板之间的密封层和具有导电材料的多个中空结构，其中多个中空结构由第一和第二导电底物。

2. 发明申请

US20090031733A1 THERMOTUNNELING REFRIGERATION SYSTEM 审中-公开
标题翻译：热交换制冷系统
公开(公告)号：US20090031733A1
公开(公告)日：2009-02-05
申请号：US11830890
申请日：2007-07-31
申请人： Stanton Earl Weaver, JR. , Mehmet Arik , James William Bray , Ahmed Elasser , Robert John Wojnarowski , Mark Wayne Wilson , Jason Knud Klindtworth , Surajit Atha
发明人： Stanton Earl Weaver, JR. , Mehmet Arik , James William Bray , Ahmed Elasser , Robert John Wojnarowski , Mark Wayne Wilson , Jason Knud Klindtworth , Surajit Atha
IPC分类号： F25B21/02
CPC分类号： F25B21/00 , F25B2321/003 , Y02B30/66
摘要： A refrigeration system is provided. The refrigeration system includes at least one thermal blocking thermotunneling device. The thermal blocking thermotunneling device comprises a first and a second surface separated by a nanoscale gap of less than about 20 nm, such that tunneling of electrons causes a unidirectional transfer of heat from the first surface to the second surface. Further, the at least one thermal blocking thermotunneling device has a thermal back path of less than about 70 percent.
摘要翻译：提供制冷系统。制冷系统包括至少一个热阻热电火花钻孔装置。热阻焊热电火焰装置包括由小于约20nm的纳米尺度间隙分开的第一和第二表面，使得电子的隧穿导致热量从第一表面到第二表面的单向转移。此外，所述至少一个热阻焊热电火花钻孔装置具有小于约70％的热回路径。

3. 发明授权

US5866952A High density interconnected circuit module with a compliant layer as part of a stress-reducing molded substrate 失效
标题翻译：高密度互连电路模块，其具有作为应力减小模制基板的一部分的柔性层
公开(公告)号：US5866952A
公开(公告)日：1999-02-02
申请号：US565269
申请日：1995-11-30
申请人： Robert John Wojnarowski , Thomas Bent Gorczyca , Stanton Earl Weaver, Jr.
发明人： Robert John Wojnarowski , Thomas Bent Gorczyca , Stanton Earl Weaver, Jr.
IPC分类号： H01L25/18 , H01L21/98 , H01L23/538 , H01L25/04 , H01L23/29
CPC分类号： H01L25/50 , H01L21/568 , H01L21/6835 , H01L23/293 , H01L23/295 , H01L23/4334 , H01L23/5389 , H01L24/24 , H01L24/75 , H01L24/76 , H01L24/82 , H01L24/96 , H01L25/0655 , H01L2224/04105 , H01L2224/24137 , H01L2224/24195 , H01L2224/73267 , H01L2224/75315 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01042 , H01L2924/01047 , H01L2924/01074 , H01L2924/10253 , H01L2924/12042 , H01L2924/14 , H01L2924/15787 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/19105 , H01L2924/3511
摘要： A high density interconnected multi-chip module is provided with a stress-reducing compliant material disposed around the chips prior to molding a polymeric substrate around the chips. Chips having contact pads are placed face down on a layer of adhesive supported by a base. A compliant material is deposited around the chips, and then a mold form is positioned around the chips. Polymeric substrate molding material is added within the mold form, and then the substrate molding material is hardened. A dielectric layer having vias aligned with predetermined ones of the contact pads and having an electrical conductor extending through the vias is situated on the hardened substrate molding material and faces of the chips. A thermal plug may be affixed to the backside of a chip prior to the addition of substrate molding material.
摘要翻译：高密度互连多芯片模块在模制聚合物基片周围的芯片之前设置有围绕芯片布置的减小应力的材料。具有接触垫的芯片面朝下放置在由基底支撑的粘合剂层上。围绕芯片沉积顺应性材料，然后将模具形式定位在芯片周围。在模具形式中加入聚合物基材模塑材料，然后将基材模塑材料硬化。具有与预定接触焊盘对准的通路并具有穿过通孔延伸的电导体的通孔的电介质层位于硬化的基板模制材料和芯片的表面上。在添加基底模制材料之前，可以将热塞固定到芯片的背面。

4. 发明授权

US06429381B1 High density interconnect multichip module stack and fabrication method 有权
标题翻译：高密度互连多芯片堆栈和制造方法
公开(公告)号：US06429381B1
公开(公告)日：2002-08-06
申请号：US09681555
申请日：2001-04-27
申请人： Richard Joseph Saia , Robert John Wojnarowski , Stanton Earl Weaver, Jr. , Kevin Matthew Durocher , Christopher James Kapusta , James Enrico Sabatini
发明人： Richard Joseph Saia , Robert John Wojnarowski , Stanton Earl Weaver, Jr. , Kevin Matthew Durocher , Christopher James Kapusta , James Enrico Sabatini
IPC分类号： H05K103
CPC分类号： H05K3/403 , H01L23/3677 , H01L23/481 , H01L25/0657 , H01L2224/16 , H01L2225/06513 , H01L2225/06527 , H01L2225/06541 , H01L2924/3011 , H05K1/0306 , H05K3/0052 , H05K3/0061 , H05K3/321 , H05K3/4605 , H05K3/4611 , H05K3/4629 , H05K2201/09663 , H05K2201/1028 , H05K2203/0415 , H05K2203/063 , H05K2203/0733 , Y10T29/5313 , Y10T29/53174
摘要： A method for fabricating a substrate package for a high density interconnect multichip module stack comprises: providing a substrate having holes extending therethrough and having a bottom surface with metallization situated thereon; providing a metal sheet having grooves extending therethrough; attaching the metal sheet to the bottom surface of the substrate; attaching metal plugs through the holes to the metal sheet; and removing portions of the substrate to expose the metal plugs and separate the metal sheet into a plurality of segments defined by the grooves.
摘要翻译：一种用于制造用于高密度互连多芯片模块堆叠的衬底封装的方法，包括：提供具有延伸穿过其中并且具有位于其上的金属化的底表面的孔的衬底; 提供具有延伸穿过其中的槽的金属片; 将所述金属片附接到所述基板的底面; 将金属塞通过孔附接到金属板; 以及去除所述基板的部分以暴露所述金属塞并将所述金属板分离成由所述槽限定的多个段。

5. 发明授权

US07498507B2 Device for solid state thermal transfer and power generation 有权
标题翻译：固态热转印和发电装置
公开(公告)号：US07498507B2
公开(公告)日：2009-03-03
申请号：US11081986
申请日：2005-03-16
申请人： Stanton Earl Weaver, Jr. , Robert John Wojnarowski
发明人： Stanton Earl Weaver, Jr. , Robert John Wojnarowski
IPC分类号： H01L35/30 , H02N10/00
CPC分类号： H01L35/32 , Y10T156/1092
摘要： A solid state thermal transfer device includes first and second electrically conductive substrates that are positioned opposite from one another. The solid state thermal transfer device also includes a sealing layer disposed between the first and second electrically conductive substrates and a plurality of hollow structures having a conductive material, wherein the plurality of hollow structures is contained by the sealing layer between the first and second electrically conductive substrates.
摘要翻译：固态热转印装置包括彼此相对定位的第一和第二导电基板。固态热转移装置还包括设置在第一和第二导电基板之间的密封层和具有导电材料的多个中空结构，其中多个中空结构由第一和第二导电底物。

6. 发明授权

US07482634B2 Monolithic array for solid state ultraviolet light emitters 有权
标题翻译：固态紫外线发射体的单片阵列
公开(公告)号：US07482634B2
公开(公告)日：2009-01-27
申请号：US10950029
申请日：2004-09-24
申请人： Robert John Wojnarowski , Stanton Earl Weaver, Jr. , Abasifreke Udo Ebong , Xian An (Andrew) Cao , Steven Francis LeBoeuf , Larry Burton Rowland , Stephen D. Arthur
发明人： Robert John Wojnarowski , Stanton Earl Weaver, Jr. , Abasifreke Udo Ebong , Xian An (Andrew) Cao , Steven Francis LeBoeuf , Larry Burton Rowland , Stephen D. Arthur
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L27/153 , H01L33/32
摘要： The present invention is directed towards a source of ultraviolet energy, wherein the source is a UV-emitting LED's. In an embodiment of the invention, the UV-LED's are characterized by a base layer material including a substrate, a p-doped semiconductor material, a multiple quantum well, a n-doped semiconductor material, upon which base material a p-type metal resides and wherein the base structure has a mesa configuration, which mesa configuration may be rounded on a boundary surface, or which may be non-rounded, such as a mesa having an upper boundary surface that is flat. In other words, the p-type metal resides upon a mesa formed out of the base structure materials. In a more specific embodiment, the UV-LED structure includes n-type metallization layer, passivation layers, and bond pads positioned at appropriate locations of the device. In a more specific embodiment, the p-type metal layer is encapsulated in the encapsulating layer.
摘要翻译：本发明涉及一种紫外线能量源，其中源是紫外线发射的LED。在本发明的实施例中，UV-LED的特征在于基底层材料，其包括基底，p掺杂半导体材料，多量子阱，n掺杂半导体材料，基底材料为p型金属并且其中基部结构具有台面构造，该台面构造可以在边界表面上圆化，或者可以是非圆形的，例如具有平坦的上边界表面的台面。换句话说，p型金属位于由基底结构材料形成的台面上。在更具体的实施例中，UV-LED结构包括位于设备适当位置的n型金属化层，钝化层和接合焊盘。在更具体的实施例中，p型金属层被封装在封装层中。

7. 发明授权

US06412971B1 Light source including an array of light emitting semiconductor devices and control method 有权
标题翻译：光源包括一组发光半导体器件和控制方法
公开(公告)号：US06412971B1
公开(公告)日：2002-07-02
申请号：US09258935
申请日：1999-03-01
申请人： Robert John Wojnarowski , Barry Scott Whitmore , William Paul Kornrumpf
发明人： Robert John Wojnarowski , Barry Scott Whitmore , William Paul Kornrumpf
IPC分类号： H01L3300
CPC分类号： H01L24/10 , F21K9/232 , F21Y2107/30 , F21Y2115/10 , H01L21/3043 , H01L21/76898 , H01L21/78 , H01L24/13 , H01L25/0652 , H01L2224/05573 , H01L2224/13 , H01L2224/13099 , H01L2224/48227 , H01L2224/48465 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01075 , H01L2924/01079 , H01L2924/014 , H01L2924/09701 , H01L2924/12041 , Y10S362/80 , H01L2924/00 , H01L2224/05599
摘要： A light source includes a substrate; an array of un-packaged light emitting semiconductor devices (LESDs), each of the LESDs having at least one surface for emitting light and a substrate surface being attached to the substrate; and a plurality of electrical connections, each electrical connection coupled for providing electrical power to a respective LESD. The LESDs are arranged on the substrate with sufficient density and light generating capability to provide a predetermined irradiation from the light source.
摘要翻译：光源包括基板; 一组未封装的发光半导体器件（LESD），每个LESD具有至少一个用于发光的表面和一个衬底表面附着于衬底; 以及多个电连接，每个电连接用于向相应的LESD提供电力。 LESD被布置在具有足够的密度和光产生能力的基板上，以提供来自光源的预定辐射。

8. 发明授权

US06410356B1 Silicon carbide large area device fabrication apparatus and method 失效
标题翻译：碳化硅大面积器件制造装置及方法
公开(公告)号：US06410356B1
公开(公告)日：2002-06-25
申请号：US09520751
申请日：2000-03-07
申请人： Robert John Wojnarowski , Ernest Wayne Balch , Leonard Richard Douglas
发明人： Robert John Wojnarowski , Ernest Wayne Balch , Leonard Richard Douglas
IPC分类号： H01L2166
CPC分类号： H01L22/20 , H01L23/34 , H01L2224/92144 , H01L2924/014 , H01L2924/1301 , H01L2924/00
摘要： A method for interconnecting high-temperature silicon carbide (SiC) devices enables such high-temperature devices to be used in fabricating electronic circuits of significant scale. This method comprises empirically measuring operational characteristics of a plurality of the devices to be interconnected, the operational characteristics comprising devices which are measured to be non-working and devices which are measured to be working; characterizing the operational characteristics in an operational characteristics map; designing interconnection paths between and among the devices that are characterized to be working by the operational characteristics map; and excluding from the interconnection paths, devices that are characterized to be non-working by the operational characteristics map. A preferred embodiment of this method further includes disposing a temporary polymer layer over the devices; forming via holes through the temporary polymer layer, to bonding pads of the devices; applying a current-balancing resistive metal over the temporary polymer layer; establishing connections between the current-balancing resistive metal and the bonding pads; designing the interconnection paths between and among the working devices by patterning the current-balancing resistive metal based on the operational characteristics map; and removing the temporary polymer layer.
摘要翻译：用于互连高温碳化硅（SiC）器件的方法使得这种高温器件能够用于制造具有显着规模的电子电路。该方法包括经验地测量待互连的多个设备的操作特性，操作特性包括被测量为不工作的设备和被测量为工作的设备; 表征操作特征图中的操作特性; 设计特征在于通过操作特征图工作的设备之间的互连路径; 并且从互连路径中排除特征在于通过操作特性图不工作的设备。该方法的优选实施例还包括在器件上设置临时聚合物层; 通过所述临时聚合物层形成通孔到所述装置的焊盘; 在临时聚合物层上施加电流平衡电阻金属; 建立电流平衡电阻金属和焊盘之间的连接; 通过基于操作特性图构图电流平衡电阻金属来设计工作装置之间和之间的互连路径; 并除去临时聚合物层。

9. 发明授权

US06302987B1 High voltage polymer processing methods and power feed-through bushing applications 失效
标题翻译：高压聚合物加工方法和电源馈通套管应用
公开(公告)号：US06302987B1
公开(公告)日：2001-10-16
申请号：US09286329
申请日：1999-04-05
申请人： Robert John Wojnarowski , Clive William Reed , Thomas Bert Gorczyca
发明人： Robert John Wojnarowski , Clive William Reed , Thomas Bert Gorczyca
IPC分类号： B29C6552
CPC分类号： H02G5/005 , Y10T29/49945
摘要： A method for coupling electrically conductive bushings in a bus, including alternating layers of dielectric material and patterned, electrically conductive bus bars and having through holes therein with each through hole having a surface exposing a portion of a respective one of the bus bars, includes: applying a polymer mixture to the surface of each through hole; inserting the bushings in the respective through holes; and curing the polymer mixture by positioning the bus and bushings in a curing chamber, applying a vacuum to the curing chamber, and applying pressure to reduce voids in the polymer mixture and minimize further void formation.
摘要翻译：一种用于在总线中耦合导电衬套的方法，包括介电材料和图案化的导电母线的交替层，并且在其中具有通孔，每个通孔具有露出相应一个母线的一部分的表面的方法包括：将聚合物混合物施加到每个通孔的表面; 将衬套插入相应的通孔中; 并通过将母线和套管定位在固化室中，对固化室施加真空并施加压力以减小聚合物混合物中的空隙并使进一步的空隙形成最小化来固化聚合物混合物。

10. 发明授权

US07667375B2 Broad band energy harvesting system and related methods 有权
标题翻译：宽带能量采集系统及相关方法
公开(公告)号：US07667375B2
公开(公告)日：2010-02-23
申请号：US11398840
申请日：2006-04-06
申请人： Ertugrul Berkcan , Robert John Wojnarowski , Emad Andarawis Andarawis , Samantha Rao , Eladio Delgado
发明人： Ertugrul Berkcan , Robert John Wojnarowski , Emad Andarawis Andarawis , Samantha Rao , Eladio Delgado
IPC分类号： H01L41/08 , H01L41/083
CPC分类号： H01L41/1136 , H02N2/188
摘要： A broad band energy harvesting system to harvest energy from a structure and associated methods are provided. The system includes a structure carrying a plurality of environmentally produced vibration frequencies extending over a frequency range and an energy harvesting apparatus positioned in vibration receiving communication with the structure to harvest energy from the structure. Each energy harvesting apparatus includes broadly tuned energy harvesting generators having relatively low quality factor and corresponding relatively wide bandwidth. The energy harvesting generators collectively provide energy harvesting over multiple modes to thereby provide energy harvesting over a substantial portion of the frequency range. Each energy harvesting generator can include a cantilevered beam connected to a common backbone comprised of a resilient material configured to transfer energy between adjacent generators to further enhance energy harvesting.
摘要翻译：提供了一种从结构和相关方法收集能量的宽带能量收集系统。该系统包括承载在频率范围上延伸的多个环境产生的振动频率的结构，以及定位在振动中的能量收集装置，该振动接收与结构的通信以从结构收集能量。每个能量收集装置包括具有相对较低质量因素和相应较宽带宽的广泛调谐的能量采集发生器。能量收集发电机在多种模式下共同提供能量收集，从而在频率范围的大部分内提供能量收集。每个能量收集发生器可以包括连接到公共骨架的悬臂梁，弹性材料构造成在相邻发电机之间传递能量以进一步增强能量收集。

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