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1. 发明授权

US5335219A Homogeneous composition of microcrystalline semiconductor material, semiconductor devices and directly overwritable memory elements fabricated therefrom, and arrays fabricated from the memory elements 失效
标题翻译：微晶半导体材料，半导体器件和由其制造的直接可重写存储元件的均匀组成，以及由存储元件制造的阵列
公开(公告)号：US5335219A
公开(公告)日：1994-08-02
申请号：US768139
申请日：1991-09-30
申请人： Stanford R. Ovshinsky , Stephen J. Hudgens , David A. Strand , Wolodymyr Czubatyj , Jesus Gonzalez-Hernandez , Hellmut Fritzsche , Qiuyi Ye , Sergey A. Kostylev , Benjamin S. Chao
发明人： Stanford R. Ovshinsky , Stephen J. Hudgens , David A. Strand , Wolodymyr Czubatyj , Jesus Gonzalez-Hernandez , Hellmut Fritzsche , Qiuyi Ye , Sergey A. Kostylev , Benjamin S. Chao
IPC分类号： H01L27/10 , G11C11/56 , G11C16/02 , H01H45/00 , H01L21/8247 , H01L27/105 , H01L27/115 , H01L27/24 , H01L29/788 , H01L29/792 , H01L45/00 , G11C13/00
CPC分类号： G11C11/56 , G11C11/5678 , G11C13/0004 , H01L27/115 , G11C13/04
摘要： A unique class of microcrystalline semiconductor materials which can be modulated, within a crystalline phase, to assume any one of a large dynamic range of different Fermi level positions while maintaining a substantially constant band gap over the entire range, even after a modulating field has been removed. A solid state, directly overwritable, electronic and optical, non-volatile, high density, low cost, low energy, high speed, readily manufacturable, multibit single cell memory based upon the novel switching characteristics provided by said unique class of semiconductor materials, which memory exhibits orders of magnitude higher switching speeds at remarkably reduced energy levels. The novel memory of the instant invention is in turn characterized, inter alia, by numerous stable and non-volatile detectable configurations of local atomic order, which configurations can be selectively and repeatably accessed by input signals of varying levels.
摘要翻译：一种独特的微晶半导体材料，其可以在晶相内被调制以承担不同费米能级位置的大动态范围中的任何一种，同时在整个范围内保持基本恒定的带隙，即使在调制场已经被删除。基于由所述独特类型的半导体材料提供的新型开关特性的固态，直接可重写的，电子和光学，非易失性，高密度，低成本，低能量，高速度，容易制造的多单元单元存储器，其中存储器在显着降低的能量水平下显示出高数量级的开关速度。特别地，本发明的新颖记忆特征还在于本地原子序列的许多稳定和非易失性可检测配置，其可通过不同等级的输入信号选择性地和可重复地访问这些配置。

2. 发明授权

US5596522A Homogeneous compositions of microcrystalline semiconductor material, semiconductor devices and directly overwritable memory elements fabricated therefrom, and arrays fabricated from the memory elements 失效
标题翻译：微晶半导体材料，半导体器件和由其制造的直接可重写存储器元件的均匀组成，以及由存储元件制造的阵列
公开(公告)号：US5596522A
公开(公告)日：1997-01-21
申请号：US510400
申请日：1995-08-02
申请人： Stanford R. Ovshinsky , Stephen J. Hudgens , David Strand , Wolodymyr Czubatyj , Jesus Gonzalez-Hernandez , Hellmut Fritzsche , Quiyi Ye , Sergey A. Kostylev , Benjamin S. Chao
发明人： Stanford R. Ovshinsky , Stephen J. Hudgens , David Strand , Wolodymyr Czubatyj , Jesus Gonzalez-Hernandez , Hellmut Fritzsche , Quiyi Ye , Sergey A. Kostylev , Benjamin S. Chao
IPC分类号： G11C11/56 , G11C16/02 , H01L27/24 , H01L45/00
CPC分类号： G11C11/56 , C01B19/007 , G11C11/5678 , G11C13/0004 , H01L27/2409 , H01L27/2463 , H01L45/065 , H01L45/1233 , H01L45/1253 , H01L45/144 , G11C13/04 , G11C2213/72
摘要： A unique class of microcrystalline semiconductor materials which can be modulated, within a crystalline phase, to assume any one of a large dynamic range of different Fermi level positions while maintaining a substantially constant band gap over the entire range, even after a modulating field has been removed. A solid state, directly overwritable, electronic and optical, non-volatile, high density, low cost, low energy, high speed, readily manufacturable, multibit single cell memory based upon the novel switching characteristics provided by said unique class of semiconductor materials, which memory exhibits orders of magnitude higher switching speeds at remarkably reduced energy levels. The novel memory of the instant invention is in turn characterized, inter alia, by numerous stable and non-volatile detectable configurations of local atomic order, which configurations can be selectively and repeatably accessed by input signals of varying levels.
摘要翻译：一种独特的微晶半导体材料，其可以在晶相内被调制以承担不同费米能级位置的大动态范围中的任何一种，同时在整个范围内保持基本恒定的带隙，即使在调制场已经被删除。基于由所述独特类型的半导体材料提供的新型开关特性的固态，直接可重写的，电子和光学，非易失性，高密度，低成本，低能量，高速度，容易制造的多单元单元存储器，其中存储器在显着降低的能量水平下显示出高数量级的开关速度。特别地，本发明的新颖记忆特征还在于本地原子序列的许多稳定和非易失性可检测配置，其可通过不同等级的输入信号选择性地和可重复地访问这些配置。

3. 发明授权

US5591501A Optical recording medium having a plurality of discrete phase change data recording points 失效
标题翻译：具有多个离散相变数据记录点的光记录介质
公开(公告)号：US5591501A
公开(公告)日：1997-01-07
申请号：US575273
申请日：1995-12-20
申请人： Stanford R. Ovshinsky , Hellmut Fritzsche
发明人： Stanford R. Ovshinsky , Hellmut Fritzsche
IPC分类号： G11B7/013 , G11B7/243 , G11B7/257 , G11B7/258 , B32B3/00
CPC分类号： G11B7/24085 , G11B7/243 , G11B7/2533 , G11B2007/24312 , G11B2007/24314 , G11B2007/24316 , G11B2007/25706 , G11B2007/2571 , G11B2007/25715 , G11B2007/25716 , G11B7/00454 , G11B7/2534 , G11B7/2542 , G11B7/258 , G11B7/2585 , Y10S428/913 , Y10S430/146 , Y10T428/21
摘要： A phase change optical recording medium which includes 1) a substrate having a planar surface; and 2) a plurality of discrete data recording points deposited upon the substrate. The discrete data recording points are formed from a phase change material which changes from a state of a first relative order to a state of a second relative order and visa versa upon the application of optical beam energy. Preferably the phase change material forming the plurality of discrete data recording points is deposited within individual cavities embossed into the surface of the substrate. More preferably the individual cavities are cylindrical or parabolic (bowl shaped) cavities having their central axis perpendicular to the plane of the surface of the substrate.
摘要翻译：一种相变光学记录介质，包括：1）具有平面的基板; 和2）沉积在基板上的多个离散数据记录点。离散数据记录点由相变材料形成，该相变材料在施加光束能量时从第一相对次序的状态变为第二相对次序的状态，反之亦然。优选地，形成多个离散数据记录点的相变材料沉积在压花到基底表面中的各个空腔内。更优选地，各个空腔是圆柱形或抛物线（碗形）空腔，其中心轴垂直于基底表面的平面。

4. 发明授权

US4723994A Method of preparing a magnetic material 失效
标题翻译：磁性材料的制备方法
公开(公告)号：US4723994A
公开(公告)日：1988-02-09
申请号：US919931
申请日：1986-10-17
申请人： Stanford R. Ovshinsky , Hellmut Fritzsche , Julius J. Harwood , Alan M. Kadin , John E. Keem
发明人： Stanford R. Ovshinsky , Hellmut Fritzsche , Julius J. Harwood , Alan M. Kadin , John E. Keem
IPC分类号： B22F9/08 , B22F9/14 , H01F1/057 , H01F1/02
CPC分类号： H01F1/0574 , B22F9/08 , B22F9/14 , H01F1/0571
摘要： A method of forming a magnetic material. The magnetic material is a solid mass of grains, and has magnetic parameters characterized by: (1) a maximum magnetic energy product, (BH).sub.max, greater than 15 megagaussoersteds; and (2) a remanence greater than 9 kilogauss. The magnetic material is prepared by a two step solidification, heat treatment process. The solidification process is carried out by: (a) providing a molten precursor alloy; (b) atomizing the molten alloy through nozzle means to form individual droplets of the molten alloy; and (c) quenching the droplets of the molten alloy to form solid particles of the alloy. The solid particles have a morphology characterized as being one or more of (i) amorphous; (ii) microcrystalline; or (iii) polycrystalline. The grains within the solid have, at this stage of the process, an average grain characteristic dimension less than that of the heat treated magnetic material. In the second, or heat treating, stage of the process, the atomized solid particles are heat treated to form a solid material comprised or grains meeting at grain boundaries. The grains and grain boundaries have the morphology of the magnetic material.
摘要翻译：一种形成磁性材料的方法。磁性材料是固体颗粒，具有磁性参数，其特征在于：（1）最大磁能积（BH）max，大于15兆比特; 和（2）大于9千字节的剩磁。磁性材料通过两步固化，热处理工艺制备。凝固过程通过以下步骤进行：（a）提供熔融前体合金; （b）通过喷嘴装置使熔融合金雾化以形成熔融合金的单个液滴; 和（c）淬灭熔融合金的液滴以形成合金的固体颗粒。固体颗粒具有以下特征的形态：（i）无定形的一种或多种; （ii）微晶; 或（iii）多晶。在该过程的这个阶段，固体颗粒的平均颗粒特征尺寸小于热处理的磁性材料的平均颗粒特征尺寸。在该方法的第二阶段或热处理阶段，雾化的固体颗粒被热处理以形成在晶界处相遇的固体材料或颗粒。晶粒和晶界具有磁性材料的形态。

5. 发明授权

US07923341B2 Higher selectivity, method for passivating short circuit current paths in semiconductor devices 失效
标题翻译：更高的选择性，半导体器件中钝化短路电流路径的方法
公开(公告)号：US07923341B2
公开(公告)日：2011-04-12
申请号：US12455503
申请日：2009-06-03
申请人： Greg DeMaggio , Hellmut Fritzsche , Ginger Pietka
发明人： Greg DeMaggio , Hellmut Fritzsche , Ginger Pietka
IPC分类号： H01L21/20
CPC分类号： H01L31/186 , H01L31/208 , Y02E10/50 , Y02P70/521 , Y10T428/23929 , Y10T428/2476 , Y10T428/24926
摘要： A method for passivating short circuit defects in a thin film large area photovoltaic device in accordance with an exemplary embodiment is provided. The method employs a passivation agent and a counter electrode disposed in said passivation agent. The method includes controlling an application of current between the substrate of said photovoltaic device and said counter electrode so as to ensure high selectivity of modification of a transparent conductive oxide material of said photovoltaic module adjacent said short circuit defect, while leaving the transparent conductive oxide material of said photovoltaic module of non-defect areas in its unmodified form.
摘要翻译：提供了根据示例性实施例的用于钝化薄膜大面积光伏器件中的短路缺陷的方法。该方法使用设置在所述钝化剂中的钝化剂和对电极。该方法包括控制在所述光电器件的衬底和所述对电极之间的电流施加，以便确保与所述短路缺陷相邻的所述光伏模块的透明导电氧化物材料的改性的高选择性，同时留下透明导电氧化物材料的未修改形式的非缺陷区域的所述光伏模块。

6. 发明申请

US20090246907A1 Higher Selectivity, Method for passivating short circuit current paths in semiconductor devices 失效
标题翻译：更高的选择性，半导体器件中钝化短路电流通路的方法
公开(公告)号：US20090246907A1
公开(公告)日：2009-10-01
申请号：US12455503
申请日：2009-06-03
申请人： Greg DeMaggio , Hellmut Fritzsche , Ginger Pietka
发明人： Greg DeMaggio , Hellmut Fritzsche , Ginger Pietka
IPC分类号： H01L21/326
CPC分类号： H01L31/186 , H01L31/208 , Y02E10/50 , Y02P70/521 , Y10T428/23929 , Y10T428/2476 , Y10T428/24926
摘要： A method for passivating short circuit defects in a thin film large area photovoltaic device in accordance with an exemplary embodiment is provided. The method employs a passivation agent and a counter electrode disposed in said passivation agent. The method includes controlling an application of current between the substrate of said photovoltaic device and said counter electrode so as to ensure high selectivity of modification of a transparent conductive oxide material of said photovoltaic module adjacent said short circuit defect, while leaving the transparent conductive oxide material of said photovoltaic module of non-defect areas in its unmodified form.
摘要翻译：提供了根据示例性实施例的用于钝化薄膜大面积光伏器件中的短路缺陷的方法。该方法使用设置在所述钝化剂中的钝化剂和对电极。该方法包括控制在所述光电器件的衬底和所述对电极之间的电流施加，以便确保与所述短路缺陷相邻的所述光伏模块的透明导电氧化物材料的改性的高选择性，同时留下透明导电氧化物材料的未修改形式的非缺陷区域的所述光伏模块。

7. 发明授权

US4620208A High performance, small area thin film transistor 失效
标题翻译：高性能，小面积薄膜晶体管
公开(公告)号：US4620208A
公开(公告)日：1986-10-28
申请号：US549996
申请日：1983-11-08
申请人： Hellmut Fritzsche , Robert R. Johnson
发明人： Hellmut Fritzsche , Robert R. Johnson
IPC分类号： H01L29/786 , H01L29/78
CPC分类号： H01L29/78642
摘要： A high performance, small area thin film transistor has a drain region, an insulating layer, and a source region at least portions of the edge of which form a non-coplanar surface with respect to a substrate. The insulative layer is formed in between the source and drain regions. A deposited semiconductor overlies the non-coplanar surface to form a current conduction channel between the drain and source. A gate insulator and gate electrode overly at least a portion of the deposited semiconductor adjacent thereto. The length of the current conduction channel is determined by the thickness of the insulative layer and therefore can be made short without precision photolithography. The non-coplanar surface can be formed by utilizing a dry process to simultaneously etch through several layers in a continuous one-step process. A second dielectric layer may be formed above the three previous layers. This decouples the gate electrode from the source region by creating two capacitances in series, thereby limiting further the capacitance between the gate electrode and the source region.
摘要翻译：高性能，小面积薄膜晶体管具有漏极区，绝缘层和源极区，其边缘的至少部分相对于衬底形成非共面。绝缘层形成在源区和漏区之间。沉积的半导体覆盖非共面表面以在漏极和源极之间形成电流传导沟道。栅极绝缘体和栅电极超过与其相邻的沉积半导体的至少一部分。电流传导通道的长度由绝缘层的厚度确定，因此可以在没有精密光刻的情况下做得很短。可以通过利用干法在连续的一步法中同时蚀刻几层来形成非共面表面。可以在三个先前层之上形成第二介电层。这通过产生串联的两个电容来将栅电极与源极区分开，从而进一步限制栅电极和源极区之间的电容。

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