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1. 发明授权

US5335219A Homogeneous composition of microcrystalline semiconductor material, semiconductor devices and directly overwritable memory elements fabricated therefrom, and arrays fabricated from the memory elements 失效
标题翻译：微晶半导体材料，半导体器件和由其制造的直接可重写存储元件的均匀组成，以及由存储元件制造的阵列
公开(公告)号：US5335219A
公开(公告)日：1994-08-02
申请号：US768139
申请日：1991-09-30
申请人： Stanford R. Ovshinsky , Stephen J. Hudgens , David A. Strand , Wolodymyr Czubatyj , Jesus Gonzalez-Hernandez , Hellmut Fritzsche , Qiuyi Ye , Sergey A. Kostylev , Benjamin S. Chao
发明人： Stanford R. Ovshinsky , Stephen J. Hudgens , David A. Strand , Wolodymyr Czubatyj , Jesus Gonzalez-Hernandez , Hellmut Fritzsche , Qiuyi Ye , Sergey A. Kostylev , Benjamin S. Chao
IPC分类号： H01L27/10 , G11C11/56 , G11C16/02 , H01H45/00 , H01L21/8247 , H01L27/105 , H01L27/115 , H01L27/24 , H01L29/788 , H01L29/792 , H01L45/00 , G11C13/00
CPC分类号： G11C11/56 , G11C11/5678 , G11C13/0004 , H01L27/115 , G11C13/04
摘要： A unique class of microcrystalline semiconductor materials which can be modulated, within a crystalline phase, to assume any one of a large dynamic range of different Fermi level positions while maintaining a substantially constant band gap over the entire range, even after a modulating field has been removed. A solid state, directly overwritable, electronic and optical, non-volatile, high density, low cost, low energy, high speed, readily manufacturable, multibit single cell memory based upon the novel switching characteristics provided by said unique class of semiconductor materials, which memory exhibits orders of magnitude higher switching speeds at remarkably reduced energy levels. The novel memory of the instant invention is in turn characterized, inter alia, by numerous stable and non-volatile detectable configurations of local atomic order, which configurations can be selectively and repeatably accessed by input signals of varying levels.
摘要翻译：一种独特的微晶半导体材料，其可以在晶相内被调制以承担不同费米能级位置的大动态范围中的任何一种，同时在整个范围内保持基本恒定的带隙，即使在调制场已经被删除。基于由所述独特类型的半导体材料提供的新型开关特性的固态，直接可重写的，电子和光学，非易失性，高密度，低成本，低能量，高速度，容易制造的多单元单元存储器，其中存储器在显着降低的能量水平下显示出高数量级的开关速度。特别地，本发明的新颖记忆特征还在于本地原子序列的许多稳定和非易失性可检测配置，其可通过不同等级的输入信号选择性地和可重复地访问这些配置。

2. 发明授权

US5596522A Homogeneous compositions of microcrystalline semiconductor material, semiconductor devices and directly overwritable memory elements fabricated therefrom, and arrays fabricated from the memory elements 失效
标题翻译：微晶半导体材料，半导体器件和由其制造的直接可重写存储器元件的均匀组成，以及由存储元件制造的阵列
公开(公告)号：US5596522A
公开(公告)日：1997-01-21
申请号：US510400
申请日：1995-08-02
申请人： Stanford R. Ovshinsky , Stephen J. Hudgens , David Strand , Wolodymyr Czubatyj , Jesus Gonzalez-Hernandez , Hellmut Fritzsche , Quiyi Ye , Sergey A. Kostylev , Benjamin S. Chao
发明人： Stanford R. Ovshinsky , Stephen J. Hudgens , David Strand , Wolodymyr Czubatyj , Jesus Gonzalez-Hernandez , Hellmut Fritzsche , Quiyi Ye , Sergey A. Kostylev , Benjamin S. Chao
IPC分类号： G11C11/56 , G11C16/02 , H01L27/24 , H01L45/00
CPC分类号： G11C11/56 , C01B19/007 , G11C11/5678 , G11C13/0004 , H01L27/2409 , H01L27/2463 , H01L45/065 , H01L45/1233 , H01L45/1253 , H01L45/144 , G11C13/04 , G11C2213/72
摘要： A unique class of microcrystalline semiconductor materials which can be modulated, within a crystalline phase, to assume any one of a large dynamic range of different Fermi level positions while maintaining a substantially constant band gap over the entire range, even after a modulating field has been removed. A solid state, directly overwritable, electronic and optical, non-volatile, high density, low cost, low energy, high speed, readily manufacturable, multibit single cell memory based upon the novel switching characteristics provided by said unique class of semiconductor materials, which memory exhibits orders of magnitude higher switching speeds at remarkably reduced energy levels. The novel memory of the instant invention is in turn characterized, inter alia, by numerous stable and non-volatile detectable configurations of local atomic order, which configurations can be selectively and repeatably accessed by input signals of varying levels.
摘要翻译：一种独特的微晶半导体材料，其可以在晶相内被调制以承担不同费米能级位置的大动态范围中的任何一种，同时在整个范围内保持基本恒定的带隙，即使在调制场已经被删除。基于由所述独特类型的半导体材料提供的新型开关特性的固态，直接可重写的，电子和光学，非易失性，高密度，低成本，低能量，高速度，容易制造的多单元单元存储器，其中存储器在显着降低的能量水平下显示出高数量级的开关速度。特别地，本发明的新颖记忆特征还在于本地原子序列的许多稳定和非易失性可检测配置，其可通过不同等级的输入信号选择性地和可重复地访问这些配置。

3. 发明授权

US5198414A In-situ growth of flourounated superconducting, Y-Ba-Cu-O thin films on sapphire substrates with a buffer layer by laser ablation 失效
标题翻译：通过激光烧蚀在具有缓冲层的蓝宝石衬底上的氟化超导Y-Ba-Cu-O薄膜的原位生长
公开(公告)号：US5198414A
公开(公告)日：1993-03-30
申请号：US770733
申请日：1991-10-01
申请人： Stanford R. Ovshinsky , Rosa Young , Gerard Van der Leeden , Benjamin S. Chao
发明人： Stanford R. Ovshinsky , Rosa Young , Gerard Van der Leeden , Benjamin S. Chao
IPC分类号： C23C14/08 , C30B23/02 , H01L39/24
CPC分类号： H01L39/2461 , C23C14/087 , C30B23/002 , C30B23/02 , C30B29/22 , C30B29/225 , Y10S505/73 , Y10S505/732 , Y10S505/785
摘要： A laser ablation method for forming a fluorinated superconducting Y-Ba-Cu-O thin film on a sapphire substrate is disclosed, which comprises the steps of: (1) depositing a barrier layer of BaAl.sub.2 O.sub.4 on the sapphire substrate; (2) placing the coated substrate and a tagret in a deposition chamber, said target including fluorine, barium, yttrium, copper and oxygen; (3) providing a background atmosphere including at least partial pressure of O.sub.2 within the chamber; (4) heating the coated substrate to a temperature above ambient; (5) laser-ablating the target material onto the heated substrate while controlling the partial pressure of O.sub.2 in said background atmosphere and the temperature of said heated substrate so that the as-deposited thin film on said substrate is superconductive.
摘要翻译：公开了一种用于在蓝宝石衬底上形成氟化超导Y-Ba-Cu-O薄膜的激光烧蚀方法，其包括以下步骤：（1）在蓝宝石衬底上沉积BaAl 2 O 4阻挡层; （2）将涂布的基板和标签放置在沉积室中，所述目标包括氟，钡，钇，铜和氧; （3）提供在室内至少包括O 2分压的背景气氛; （4）将涂覆的基材加热到高于环境温度的温度; （5）在控制所述背景气氛中的O 2分压和所述被加热衬底的温度的同时将目标材料激光烧蚀到加热的衬底上，使得所述衬底上沉积的薄膜是超导的。

4. 发明授权

US5840440A Hydrogen storage materials having a high density of non-conventional useable hydrogen storing sites 失效
标题翻译：具有非常规可用氢存储位点的高密度的储氢材料
公开(公告)号：US5840440A
公开(公告)日：1998-11-24
申请号：US560612
申请日：1995-11-20
申请人： Stanford R. Ovshinsky , Michael A. Fetcenko , Jun Su Im , Kwo Young , Benjamin S. Chao , Benjamin Reichman
发明人： Stanford R. Ovshinsky , Michael A. Fetcenko , Jun Su Im , Kwo Young , Benjamin S. Chao , Benjamin Reichman
IPC分类号： C01B3/00 , C22C14/00 , C22C16/00 , C22C19/00 , C22C27/06 , H01M4/38 , H01M10/34
CPC分类号： C01B3/0031 , C01B3/0057 , C01B3/0084 , H01M4/383 , B22F2998/00 , Y02E60/327 , Y10S420/90
摘要： Disordered multicomponent hydrogen storage material characterized by extraordinarily high storage capacity due to a high density of useable hydrogen storage sites (greater than 10.sup.23 defect sites/cc) and/or an extremely small crystallite size. The hydrogen storage material can be employed for electrochemical, fuel cell and gas phase applications. The material may be selected from either of the modified LaNi.sub.5 or modified TiNi families formulated to have a crystallite size of less than 200 Angstroms and most preferably less than 100 Angstroms.
摘要翻译：无机多组分储氢材料的特征在于由于高可用氢储存位点（大于1023个缺陷部位/ cc）和/或非常小的微晶尺寸而具有非常高的储存能力。储氢材料可用于电化学，燃料电池和气相应用。该材料可以选自配制成具有小于200埃，最优选小于100埃的微晶尺寸的经修饰的LaNi5或修饰的TiNi族中的任一种。

5. 发明授权

US5536591A Electrochemical hydrogen storage alloys for nickel metal hydride batteries 失效
标题翻译：镍氢电池电化学储氢合金
公开(公告)号：US5536591A
公开(公告)日：1996-07-16
申请号：US423072
申请日：1995-04-17
申请人： Michael A. Fetcenko , Stanford R. Ovshinsky , Benjamin S. Chao , Benjamin Reichman
发明人： Michael A. Fetcenko , Stanford R. Ovshinsky , Benjamin S. Chao , Benjamin Reichman
IPC分类号： C22C30/00 , C01B3/00 , C22C14/00 , C22C16/00 , C22C19/00 , H01M4/02 , H01M4/04 , H01M4/24 , H01M4/36 , H01M4/38 , H01M4/46 , H01M10/30 , H01M10/34
CPC分类号： C22C30/00 , C01B3/0031 , C01B3/0057 , H01M10/345 , H01M4/049 , H01M4/366 , H01M4/383 , H01M2004/021 , H01M4/46 , Y02E60/327 , Y10S420/90
摘要： A disordered electrochemical hydrogen storage alloy comprising:(Base Alloy).sub.a Co.sub.b Mn.sub.c Fe.sub.d Sn.sub.ewhere the Base Alloy comprises 0.1 to 60 atomic percent Ti, 0.1 to 40 atomic percent Zr, 0 to 60 atomic percent V, 0.1 to 57 atomic percent Ni, and 0 to 56 atomic percent Cr; b is 0 to 7.5 atomic percent; c is 13 to 17 atomic percent; d is 0 to 3.5 atomic percent; e is 0 to 1.5 atomic percent; and a+b+c+d+e=100 atomic percent.
摘要翻译：一种无序的电化学储氢合金，包括：（基体合金）aCobMncFedSne，其中基体合金包含0.1至60原子％的Ti，0.1至40原子％的Zr，0至60原子％的V，0.1至57原子％的Ni和0至56 原子％Cr b为0〜7.5原子％; c为13〜17原子％ d为0〜3.5原子％ e为0〜1.5原子％和a + b + c + d + e = 100原子％。

6. 发明授权

US5562776A Apparatus for microwave plasma enhanced physical/chemical vapor deposition 失效
公开(公告)号：US5562776A
公开(公告)日：1996-10-08
申请号：US308861
申请日：1994-09-19
申请人： Krishna Sapru , Annette J. Krisko , David Beglau , Benjamin S. Chao
发明人： Krishna Sapru , Annette J. Krisko , David Beglau , Benjamin S. Chao
IPC分类号： C23C14/22 , C23C16/448 , C23C16/511 , H01J37/32 , A01K15/04 , H05H1/30
CPC分类号： H01J37/32192 , C23C14/22 , C23C16/4485 , C23C16/511
摘要： A microwave plasma enhanced PVD/CVD apparatus and method. The apparatus includes an evacuable deposition chamber having a plasma region and a deposition region adjacent one another. The apparatus also includes a source of microwave energy, and a microwave waveguide to transfer microwave energy from the source thereof to the plasma region. Additionally, the apparatus includes a plate, crucible or boat for holding solid or liquid starting materials within said plasma region, and a system of flow controllers and gas transport tubing for introducing gaseous materials into the plasma region, the interaction of the microwave energy with the gaseous materials forms a plasma within the plasma region. The plasma provides thermal energy for the evaporation of the solid or liquid starting materials and causes the reaction of any reactive gases or vapors present in the plasma region. A substrate holder is positioned within the deposition region for holding a substrate upon which the deposited material is collected and a system of pumps, valves and exhaust tubing is attached to the deposition chamber for evacuating the deposition chamber and venting undeposited waste gases and vapors. The method involves the steps of providing an evacuable deposition chamber having a plasma region and a deposition region adjacent one another; positioning a substrate within the deposition region; providing solid or liquid starting materials within the plasma region; evacuating the deposition chamber; providing a source of microwave energy; transferring microwave energy from the source thereof to the plasma region; introducing gaseous materials into the plasma region; interacting the microwave energy with the gaseous materials to form a plasma within the plasma region, the plasma providing thermal energy for the evaporation of the solid or liquid starting materials and causing the reaction of any reactive gases or vapors present in the plasma region; depositing the evaporated and reacted species upon the substrate to form a thin film of deposited material; and venting undeposited waste gases and vapors from the deposition chamber.

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