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1. 发明授权

US06771472B1 Structure to achieve thermally stable high sensitivity and linear range in bridge GMR sensor using SAF magnetic alignments 失效
标题翻译：结构实现热稳定的高灵敏度和线性范围的桥梁GMR传感器使用SAF磁性对准
公开(公告)号：US06771472B1
公开(公告)日：2004-08-03
申请号：US10314458
申请日：2002-12-06
申请人： Sining Mao , Songsheng Xue , William Vavra , William Jude O'Kane , James Keith Price , Patrick Joseph Ryan
发明人： Sining Mao , Songsheng Xue , William Vavra , William Jude O'Kane , James Keith Price , Patrick Joseph Ryan
IPC分类号： G11B539
CPC分类号： B82Y25/00 , G01R33/093 , G11B5/3906
摘要： The invention provides a magnetic sensor having a first opposing pair and a second opposing pair of resistive elements configured in a Wheatstone bridge, wherein the resistive elements are a synthetic antiferromagnetic giant magnetoresistive sensor having a reference layer and a pinned layer of different thicknesses, wherein the first opposing pair has a net magnetic moment that is opposite to that of the second opposing pair, and wherein the first opposing pair has a thicker reference layer than pinned layer, and the second opposing pair has a thicker pinned layer than reference layer. Other embodiments of the invention have resistive elements that are opposingly bilayer and trilayer synthetic antiferromagnetic giant magnetoresistive sensors, or opposingly synthetic and standard antiferromagnetic giant magnetoresistive sensors.
摘要翻译：本发明提供一种磁传感器，其具有配置在惠斯通电桥中的第一相对对和第二相对对的电阻元件，其中电阻元件是具有参考层和不同厚度的钉扎层的合成反铁磁巨磁阻传感器，其中，第一相对对具有与第二相对对相反的净磁矩，并且其中第一相对对具有比被钉扎层更厚的参考层，并且第二相对对具有比参考层更厚的钉扎层。本发明的其它实施例具有相反的双层和三层合成反铁磁巨磁阻传感器或相反的合成和标准反铁磁巨磁阻传感器的电阻元件。

2. 发明授权

US09575143B2 Single-chip two-axis magnetic field sensor 有权
标题翻译：单芯片双轴磁场传感器
公开(公告)号：US09575143B2
公开(公告)日：2017-02-21
申请号：US14110106
申请日：2012-05-23
申请人： James Geza Deak , Insik Jin , Weifeng Shen , Xiaofeng Lei , Songsheng Xue
发明人： James Geza Deak , Insik Jin , Weifeng Shen , Xiaofeng Lei , Songsheng Xue
IPC分类号： G01R33/09
CPC分类号： G01R33/098
摘要： The present invention discloses a design for a single-chip dual-axis magnetic field sensor, based on magnetic tunnel junction (MTJ) elements and permanent magnets integrated on a semiconductor substrate to produce two types of sensor bridges that detect orthogonal magnetic field components. The orthogonal magnetic field component detection capability results from the different types of sensor bridges that can be produced by varying the shape of the MTJ elements and the bias fields that can be created by permanent magnets. Because the permanent magnets can create orthogonal bias fields on the different sensor bridges, it is possible to use a single pinned layer to set direction for both sensor bridges. This is advantageous because it permits the two-axis sensor to be fabricated on a single semiconductor chip without the need for specialized processing technology such as local heating, or deposition of multiple magnetoresistive films with different pinned layers setting directions.
摘要翻译：本发明公开了一种基于磁性隧道结（MTJ）元件和集成在半导体衬底上的永磁体的单芯片双轴磁场传感器的设计，以产生检测正交磁场分量的两种传感器桥。正交磁场分量检测能力来自可以通过改变MTJ元件的形状和由永磁体产生的偏置场来产生的不同类型的传感器桥。因为永磁体可以在不同传感器桥上产生正交偏置场，所以可以使用单个固定层来设置两个传感器桥的方向。这是有利的，因为它允许在单个半导体芯片上制造双轴传感器，而不需要诸如局部加热或具有不同钉扎层设置方向的多个磁阻膜的沉积等专门的处理技术。

3. 发明申请

US20140225605A1 Mtj three-axis magnetic field sensor and encapsulation method thereof 审中-公开
标题翻译： Mtj三轴磁场传感器及其封装方法
公开(公告)号：US20140225605A1
公开(公告)日：2014-08-14
申请号：US14239859
申请日：2012-08-27
申请人： Xiaofeng Lei , Xiaojun Zhang , Wei Li , Songsheng Xue
发明人： Xiaofeng Lei , Xiaojun Zhang , Wei Li , Songsheng Xue
IPC分类号： G01R33/09 , G01R3/00
CPC分类号： G01R33/098 , G01R3/00 , G01R33/0206 , G01R33/093 , Y10T29/49002
摘要： The present invention discloses a MTJ triaxial magnetic field sensor, comprising an X-axis bridge sensor that has a sensing direction along an X-axis, a Y-axis bridge sensor that has a sensing direction along a Y-axis, a Z-axis sensor that has a sensing direction along a Z-axis, and an ASIC chip connected with and matched to the X-axis, Y-axis, and Z-axis sensor chips. The Z-axis sensor includes a substrate and MTJ magnetoresistive elements deposited on the substrate. The Z axis magnetic field sensor is attached to the ASIC chip along an attachment edge, and an angle is formed between the sensor side of the Z axis magnetic field sensor and the adjacent attachment edge. The attachment edge angle is an acute angle or an obtuse angle. The resulting X, Y, and Z axes are mutually orthogonal. The above design provides a highly integrated sensor with high sensitivity, low power consumption, good linearity, wide dynamic range, excellent thermal stability, and low noise.
摘要翻译：本发明公开了一种MTJ三轴磁场传感器，其特征在于，包括具有沿X轴方向的X轴桥式传感器，具有Y轴感测方向的Y轴桥式传感器，Z轴传感器，其具有沿Z轴的感测方向，以及与X轴，Y轴和Z轴传感器芯片连接并匹配的ASIC芯片。 Z轴传感器包括沉积在衬底上的衬底和MTJ磁阻元件。 Z轴磁场传感器沿着附接边缘附接到ASIC芯片，并且在Z轴磁场传感器的传感器侧和相邻的附接边缘之间形成一角度。附着边角是锐角或钝角。所得到的X，Y和Z轴是相互正交的。上述设计提供了高灵敏度，低功耗，线性度好，动态范围广，热稳定性好，噪音低的高度集成的传感器。

4. 发明授权

US09341686B2 Single-package power meter 有权
标题翻译：单包功率计
公开(公告)号：US09341686B2
公开(公告)日：2016-05-17
申请号：US13882133
申请日：2011-10-26
申请人： James G. Deak , Insik Jin , Weifeng Shen , Songsheng Xue
发明人： James G. Deak , Insik Jin , Weifeng Shen , Songsheng Xue
IPC分类号： G01R33/09 , G01R21/00 , G01R21/06 , G01R22/10 , G01R15/20
CPC分类号： G01R33/098 , G01R15/205 , G01R21/00 , G01R21/06 , G01R22/10
摘要： A single-package power meter is disclosed for measuring the power consumed by a load connected to an electrical conductor. The power meter is galvanically isolated from the electrical conductor through the use of magnetic sensors or through the combination of magnetic sensors and capacitors. Instantaneous power consumed at the load and other desired parameters are determined by measuring the voltage of the load and current flowing through the electrical conductor. Current is measured using a magnetic sensor to detect the magnetic field associated with the current flowing through the electrical conductor. Voltage is measured by one of two possible techniques involving magnetic sensors to measure the current flowing through a coil connected in parallel with a load, or through the use of a capacitively coupled voltage divider connected in parallel with the load. An application specific integrated circuit is further disclosed that controls the bias currents of the sensors for autoranging purposes and also for computing desired parameters, such as power consumption.
摘要翻译：公开了一种用于测量连接到电导体的负载消耗的功率的单封装功率计。功率计通过使用磁传感器或通过磁传感器和电容器的组合与电导体电隔离。在负载和其他所需参数下消耗的瞬时功率通过测量负载和电流通过电导体的电流来确定。使用磁传感器测量电流，以检测与流过电导体的电流相关的磁场。电压通过涉及磁传感器的两种可能技术之一来测量，以测量流过与负载并联连接的线圈的电流，或通过使用与负载并联连接的电容耦合分压器。还公开了一种专用集成电路，其控制用于自动量程目的的传感器的偏置电流并且还用于计算期望的参数，例如功率消耗。

5. 发明授权

US09123877B2 Single-chip bridge-type magnetic field sensor and preparation method thereof 有权
标题翻译：单片桥式磁场传感器及其制备方法
公开(公告)号：US09123877B2
公开(公告)日：2015-09-01
申请号：US14009834
申请日：2012-04-01
申请人： Xiaofeng Lei , Insik Jin , James Geza Deak , Weifeng Shen , Mingfeng Liu , Songsheng Xue
发明人： Xiaofeng Lei , Insik Jin , James Geza Deak , Weifeng Shen , Mingfeng Liu , Songsheng Xue
IPC分类号： H01L29/82 , H01L43/02 , G01B7/30 , G01R33/09 , G11B5/39 , B82Y10/00
CPC分类号： H01L43/12 , B82Y10/00 , G01B7/30 , G01R33/0052 , G01R33/093 , G01R33/098 , G11B5/3909 , G11B5/3993 , G11B2005/3996 , H01L43/02 , H01L43/08
摘要： The present invention discloses a design and manufacturing method for a single-chip magnetic sensor bridge. The sensor bridge comprises four magnetoresistive elements. The magnetization of the pinned layer of each of the four magnetoresistive elements is set in the same direction, but the magnetization directions of the free layers of the magnetoresistive elements on adjacent arms of the bridge are set at different angles with respect to the pinned layer magnetization direction. The absolute values of the angles of the magnetization directions of the free layers of all four magnetoresistive elements are the same with respect with their pinning layers. The disclosed magnetic biasing scheme enables the integration of a push-pull Wheatstone bridge magnetic field sensor on a single chip with better performance, lower cost, and easier manufacturability than conventional magnetoresistive sensor designs.
摘要翻译：本发明公开了一种单芯片磁传感器桥的设计和制造方法。传感器桥包括四个磁阻元件。四个磁阻元件中的每一个的钉扎层的磁化被设定在相同的方向上，但是桥的相邻臂上的磁阻元件的自由层的磁化方向相对于被钉扎层的磁化被设定在不同的角度方向。所有四个磁阻元件的自由层的磁化方向的角度的绝对值与它们的钉扎层相同。所公开的磁偏置方案使得能够将单个芯片上的推挽惠斯通电桥磁场传感器与传统的磁阻传感器设计相比具有更好的性能，更低的成本和更易于制造的能力。

6. 发明授权

US09123876B2 Single-package bridge-type magnetic-field angle sensor 有权
标题翻译：单封装桥式磁场角传感器
公开(公告)号：US09123876B2
公开(公告)日：2015-09-01
申请号：US14002738
申请日：2012-03-02
申请人： James Geza Deak , Weifeng Shen , Xiaojun Zhang , Xiaofeng Lei , Insik Jin , Songsheng Xue
发明人： James Geza Deak , Weifeng Shen , Xiaojun Zhang , Xiaofeng Lei , Insik Jin , Songsheng Xue
IPC分类号： H01L27/22 , H01L43/02 , G01B7/30 , G01R33/09 , H01L43/08 , G01D5/14
CPC分类号： H01L43/02 , G01B7/30 , G01D5/145 , G01R33/098 , H01L43/08
摘要： A single-package bridge-type magnetic-field angle sensor comprising one or more pairs of magnetic tunnel junction sensor chips rotated relative to each other by 90 degrees in order to detect two magnetic field components in orthogonal directions respectively is disclosed. The magnetic-field angle sensor may comprise a pair of MTJ full-bridges or half-bridges interconnected with a semiconductor package lead. The magnetic-field angle sensor can be packaged into various low-cost standard semiconductor packages.
摘要翻译：公开了一种单包装桥式磁场角传感器，其包括相对于彼此相对旋转90度的一对或多对磁性隧道结传感器芯片，以分别检测正交方向上的两个磁场分量。磁场角传感器可以包括与半导体封装引线互连的一对MTJ全桥或半桥。磁场角传感器可以封装成各种低成本的标准半导体封装。

7. 发明授权

US08872292B2 Push-pull magnetoresistive sensor bridges and mass fabrication method 有权
标题翻译：推挽磁阻传感器桥梁和大量制造方法
公开(公告)号：US08872292B2
公开(公告)日：2014-10-28
申请号：US14002733
申请日：2012-03-02
申请人： James Geza Deak , Insik Jin , Weifeng Shen , Songsheng Xue , Xiaofeng Lei , Xiaojun Zhang , Dongfeng Li
发明人： James Geza Deak , Insik Jin , Weifeng Shen , Songsheng Xue , Xiaofeng Lei , Xiaojun Zhang , Dongfeng Li
IPC分类号： H01L27/22 , H01L25/04 , G01R33/09 , H01L43/02
CPC分类号： H01L25/04 , G01R33/093 , G01R33/098 , H01L43/02 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/48464 , H01L2924/00014
摘要： A multi-chip push-pull magnetoresistive bridge sensor utilizing magnetic tunnel junctions is disclosed. The magnetoresistive bridge sensor is composed of a two or more magnetic tunnel junction sensor chips placed in a semiconductor package. For each sensing axis parallel to the surface of the semiconductor package, the sensor chips are aligned with their reference directions in opposition to each other. The sensor chips are then interconnected as a push-pull half-bridge or Wheatstone bridge using wire bonding. The chips are wire-bonded to any of various standard semiconductor lead frames and packaged in inexpensive standard semiconductor packages.
摘要翻译：公开了一种利用磁隧道结的多芯片推挽磁阻桥式传感器。磁阻桥式传感器由放置在半导体封装中的两个或多个磁性隧道结传感器芯片组成。对于平行于半导体封装表面的感测轴，传感器芯片与它们的参考方向相互对准。然后将传感器芯片作为推挽半桥或使用引线接合的惠斯通电桥进行互连。这些芯片被引线接合到各种标准半导体引线框架中的任何一个并且封装在廉价的标准半导体封装中。

8. 发明申请

US20130300409A1 Single-Package Bridge-Type Magnetic Field Sensor 有权
标题翻译：单包桥型磁场传感器
公开(公告)号：US20130300409A1
公开(公告)日：2013-11-14
申请号：US13979721
申请日：2011-12-31
申请人： James Geza Deak , Insik Jin , Xiaofeng Lei , Weifeng Shen , Jianguo Wang , Songsheng Xue , Xiaojun Zhang
发明人： James Geza Deak , Insik Jin , Xiaofeng Lei , Weifeng Shen , Jianguo Wang , Songsheng Xue , Xiaojun Zhang
IPC分类号： G01R33/09
CPC分类号： G01R33/093 , G01R33/098
摘要： A magnetoresistive sensor bridge utilizing magnetic tunnel junctions is disclosed. The magnetoresistive sensor bridge is composed of one or more magnetic tunnel junction sensor chips to provide a half-bridge or full bridge sensor in a standard semiconductor package. The sensor chips may be arranged such that the pinned layers of the different chips are mutually anti-parallel to each other in order to form a push-pull bridge structure. The sensor chips are then interconnected using wire bonding. The chips can be wire-bonded to various standard semiconductor leadframes and packaged in inexpensive standard semiconductor packages. The bridge design may be push-pull or referenced. In the referenced case, the on-chip reference resistors may be implemented without magnetic shielding.
摘要翻译：公开了一种利用磁隧道结的磁阻传感器桥。磁阻传感器桥由一个或多个磁性隧道结传感器芯片组成，以在标准半导体封装中提供半桥或全桥传感器。可以将传感器芯片布置成使得不同芯片的被钉扎层彼此相互反平行以形成推挽桥结构。然后使用引线接合将传感器芯片互连。这些芯片可以引线接合到各种标准的半导体引线框架上，并以廉价的标准半导体封装封装。桥梁设计可能是推拉式或参考式。在所提及的情况下，片上参考电阻器可以在没有磁屏蔽的情况下实现。

9. 发明授权

US09234948B2 Single-package bridge-type magnetic field sensor 有权
标题翻译：单包桥型磁场传感器
公开(公告)号：US09234948B2
公开(公告)日：2016-01-12
申请号：US13979721
申请日：2011-12-31
申请人： James Geza Deak , Insik Jin , Xiaofeng Lei , Weifeng Shen , Songsheng Xue , Xiaojun Zhang
发明人： James Geza Deak , Insik Jin , Xiaofeng Lei , Weifeng Shen , Songsheng Xue , Xiaojun Zhang
IPC分类号： G01R33/02 , G01R33/09
CPC分类号： G01R33/093 , G01R33/098
摘要： A magnetoresistive sensor bridge utilizing magnetic tunnel junctions is disclosed. The magnetoresistive sensor bridge is composed of one or more magnetic tunnel junction sensor chips to provide a half-bridge or full bridge sensor in a standard semiconductor package. The sensor chips may be arranged such that the pinned layers of the different chips are mutually anti-parallel to each other in order to form a push-pull bridge structure. The sensor chips are then interconnected using wire bonding. The chips can be wire-bonded to various standard semiconductor leadframes and packaged in inexpensive standard semiconductor packages. The bridge design may be push-pull or referenced. In the referenced case, the on-chip reference resistors may be implemented without magnetic shielding.
摘要翻译：公开了一种利用磁隧道结的磁阻传感器桥。磁阻传感器桥由一个或多个磁性隧道结传感器芯片组成，以在标准半导体封装中提供半桥或全桥传感器。可以将传感器芯片布置成使得不同芯片的被钉扎层彼此相互反平行以形成推挽桥结构。然后使用引线接合将传感器芯片互连。这些芯片可以引线接合到各种标准的半导体引线框架上，并以廉价的标准半导体封装封装。桥梁设计可能是推拉式或参考式。在所提及的情况下，片上参考电阻器可以在没有磁屏蔽的情况下实现。

10. 发明授权

US09116199B2 Full-bridge magnetoresistive rotation sensors and mass fabrication method 有权
标题翻译：全桥磁阻旋转传感器和大量制造方法
公开(公告)号：US09116199B2
公开(公告)日：2015-08-25
申请号：US14002734
申请日：2012-03-02
申请人： James G. Deak , Weifeng Shen , Xiaojun Zhang , Xiaofeng Lei , Insik Jin , Songsheng Xue
发明人： James G. Deak , Weifeng Shen , Xiaojun Zhang , Xiaofeng Lei , Insik Jin , Songsheng Xue
IPC分类号： G01B7/14 , G01B7/30 , G01R33/06 , H01L43/08 , G01R33/09 , B82Y25/00 , G01D5/14 , G01R33/02
CPC分类号： G01R33/098 , B82Y25/00 , G01B7/30 , G01D5/145 , G01R33/093 , H01L43/08
摘要： A single package magnetoresistive angle sensor for use in measuring rotation angle of a magnet is disclosed. The magnetoresistive angle sensor comprises a pair of magnetoresistive sensor chips, wherein one of the chips is rotated by 180-degree rotation relative to the other. The magnetoresistive sensor chips are attached to a standard semiconductor package lead frame to form a single-axis push-pull full-bridge sensor. Each of the magnetoresistive sensor chips comprises a pair of magnetoresistance sensor arms. Each magnetoresistive sensor arm comprises one or more GMR or MTJ sensor elements. The GMR of MTR sensor elements utilize a pined layer. The element blocks of the magnetoresistive sensor electrically are interconnected and connected to the package leads by wirebonding. The magnetoresistive angle sensor can be packaged into various standard semiconductor package designs. Also, provided is a dual-axis push-pull full-bridge magnetoresistive angle sensor comprised of two pairs of magnetoresistive sensor chips.
摘要翻译：公开了一种用于测量磁体旋转角度的单包磁阻角传感器。磁阻角传感器包括一对磁阻传感器芯片，其中一个芯片相对于另一个旋转180度旋转。磁阻传感器芯片附接到标准半导体封装引线框架以形成单轴推挽全桥传感器。每个磁阻传感器芯片包括一对磁阻传感器臂。每个磁阻传感器臂包括一个或多个GMR或MTJ传感器元件。 MTR传感器元件的GMR利用了一个Pined层。磁阻传感器的元件块电连接并通过引线接合连接到封装引线。磁阻角传感器可以封装成各种标准的半导体封装设计。此外，提供了由两对磁阻传感器芯片组成的双轴推挽全桥磁阻角度传感器。

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