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1. 发明授权

US08872292B2 Push-pull magnetoresistive sensor bridges and mass fabrication method 有权
标题翻译：推挽磁阻传感器桥梁和大量制造方法
公开(公告)号：US08872292B2
公开(公告)日：2014-10-28
申请号：US14002733
申请日：2012-03-02
申请人： James Geza Deak , Insik Jin , Weifeng Shen , Songsheng Xue , Xiaofeng Lei , Xiaojun Zhang , Dongfeng Li
发明人： James Geza Deak , Insik Jin , Weifeng Shen , Songsheng Xue , Xiaofeng Lei , Xiaojun Zhang , Dongfeng Li
IPC分类号： H01L27/22 , H01L25/04 , G01R33/09 , H01L43/02
CPC分类号： H01L25/04 , G01R33/093 , G01R33/098 , H01L43/02 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/48464 , H01L2924/00014
摘要： A multi-chip push-pull magnetoresistive bridge sensor utilizing magnetic tunnel junctions is disclosed. The magnetoresistive bridge sensor is composed of a two or more magnetic tunnel junction sensor chips placed in a semiconductor package. For each sensing axis parallel to the surface of the semiconductor package, the sensor chips are aligned with their reference directions in opposition to each other. The sensor chips are then interconnected as a push-pull half-bridge or Wheatstone bridge using wire bonding. The chips are wire-bonded to any of various standard semiconductor lead frames and packaged in inexpensive standard semiconductor packages.
摘要翻译：公开了一种利用磁隧道结的多芯片推挽磁阻桥式传感器。磁阻桥式传感器由放置在半导体封装中的两个或多个磁性隧道结传感器芯片组成。对于平行于半导体封装表面的感测轴，传感器芯片与它们的参考方向相互对准。然后将传感器芯片作为推挽半桥或使用引线接合的惠斯通电桥进行互连。这些芯片被引线接合到各种标准半导体引线框架中的任何一个并且封装在廉价的标准半导体封装中。

2. 发明申请

US20140203384A1 Push-Pull Magnetoresistive Sensor Bridges and Mass Fabrication Method 有权
标题翻译：推拉式磁阻传感器桥梁和大规模制造方法
公开(公告)号：US20140203384A1
公开(公告)日：2014-07-24
申请号：US14002733
申请日：2012-03-02
申请人： James Geza Deak , Insik Jin , Weifeng Shen , Songsheng Xue , Xiaofeng Lei , Xiaojun Zhang , Dongfeng Li
发明人： James Geza Deak , Insik Jin , Weifeng Shen , Songsheng Xue , Xiaofeng Lei , Xiaojun Zhang , Dongfeng Li
IPC分类号： H01L25/04 , H01L43/02 , G01R33/09
CPC分类号： H01L25/04 , G01R33/093 , G01R33/098 , H01L43/02 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/48464 , H01L2924/00014
摘要： A multi-chip push-pull magnetoresistive bridge sensor utilizing magnetic tunnel junctions is disclosed. The magnetoresistive bridge sensor is composed of a two or more magnetic tunnel junction sensor chips placed in a semiconductor package. For each sensing axis parallel to the surface of the semiconductor package, the sensor chips are aligned with their reference directions in opposition to each other. The sensor chips are then interconnected as a push-pull half-bridge or Wheatstone bridge using wire bonding. The chips are wire-bonded to any of various standard semiconductor lead frames and packaged in inexpensive standard semiconductor packages.
摘要翻译：公开了一种利用磁隧道结的多芯片推挽磁阻桥式传感器。磁阻桥式传感器由放置在半导体封装中的两个或多个磁性隧道结传感器芯片组成。对于平行于半导体封装表面的感测轴，传感器芯片与它们的参考方向相互对准。然后将传感器芯片作为推挽半桥或使用引线接合的惠斯通电桥进行互连。这些芯片被引线接合到各种标准半导体引线框架中的任何一个并且封装在廉价的标准半导体封装中。

3. 发明授权

US09234948B2 Single-package bridge-type magnetic field sensor 有权
标题翻译：单包桥型磁场传感器
公开(公告)号：US09234948B2
公开(公告)日：2016-01-12
申请号：US13979721
申请日：2011-12-31
申请人： James Geza Deak , Insik Jin , Xiaofeng Lei , Weifeng Shen , Songsheng Xue , Xiaojun Zhang
发明人： James Geza Deak , Insik Jin , Xiaofeng Lei , Weifeng Shen , Songsheng Xue , Xiaojun Zhang
IPC分类号： G01R33/02 , G01R33/09
CPC分类号： G01R33/093 , G01R33/098
摘要： A magnetoresistive sensor bridge utilizing magnetic tunnel junctions is disclosed. The magnetoresistive sensor bridge is composed of one or more magnetic tunnel junction sensor chips to provide a half-bridge or full bridge sensor in a standard semiconductor package. The sensor chips may be arranged such that the pinned layers of the different chips are mutually anti-parallel to each other in order to form a push-pull bridge structure. The sensor chips are then interconnected using wire bonding. The chips can be wire-bonded to various standard semiconductor leadframes and packaged in inexpensive standard semiconductor packages. The bridge design may be push-pull or referenced. In the referenced case, the on-chip reference resistors may be implemented without magnetic shielding.
摘要翻译：公开了一种利用磁隧道结的磁阻传感器桥。磁阻传感器桥由一个或多个磁性隧道结传感器芯片组成，以在标准半导体封装中提供半桥或全桥传感器。可以将传感器芯片布置成使得不同芯片的被钉扎层彼此相互反平行以形成推挽桥结构。然后使用引线接合将传感器芯片互连。这些芯片可以引线接合到各种标准的半导体引线框架上，并以廉价的标准半导体封装封装。桥梁设计可能是推拉式或参考式。在所提及的情况下，片上参考电阻器可以在没有磁屏蔽的情况下实现。

4. 发明授权

US09123876B2 Single-package bridge-type magnetic-field angle sensor 有权
标题翻译：单封装桥式磁场角传感器
公开(公告)号：US09123876B2
公开(公告)日：2015-09-01
申请号：US14002738
申请日：2012-03-02
申请人： James Geza Deak , Weifeng Shen , Xiaojun Zhang , Xiaofeng Lei , Insik Jin , Songsheng Xue
发明人： James Geza Deak , Weifeng Shen , Xiaojun Zhang , Xiaofeng Lei , Insik Jin , Songsheng Xue
IPC分类号： H01L27/22 , H01L43/02 , G01B7/30 , G01R33/09 , H01L43/08 , G01D5/14
CPC分类号： H01L43/02 , G01B7/30 , G01D5/145 , G01R33/098 , H01L43/08
摘要： A single-package bridge-type magnetic-field angle sensor comprising one or more pairs of magnetic tunnel junction sensor chips rotated relative to each other by 90 degrees in order to detect two magnetic field components in orthogonal directions respectively is disclosed. The magnetic-field angle sensor may comprise a pair of MTJ full-bridges or half-bridges interconnected with a semiconductor package lead. The magnetic-field angle sensor can be packaged into various low-cost standard semiconductor packages.
摘要翻译：公开了一种单包装桥式磁场角传感器，其包括相对于彼此相对旋转90度的一对或多对磁性隧道结传感器芯片，以分别检测正交方向上的两个磁场分量。磁场角传感器可以包括与半导体封装引线互连的一对MTJ全桥或半桥。磁场角传感器可以封装成各种低成本的标准半导体封装。

5. 发明申请

US20130300409A1 Single-Package Bridge-Type Magnetic Field Sensor 有权
标题翻译：单包桥型磁场传感器
公开(公告)号：US20130300409A1
公开(公告)日：2013-11-14
申请号：US13979721
申请日：2011-12-31
申请人： James Geza Deak , Insik Jin , Xiaofeng Lei , Weifeng Shen , Jianguo Wang , Songsheng Xue , Xiaojun Zhang
发明人： James Geza Deak , Insik Jin , Xiaofeng Lei , Weifeng Shen , Jianguo Wang , Songsheng Xue , Xiaojun Zhang
IPC分类号： G01R33/09
CPC分类号： G01R33/093 , G01R33/098
摘要： A magnetoresistive sensor bridge utilizing magnetic tunnel junctions is disclosed. The magnetoresistive sensor bridge is composed of one or more magnetic tunnel junction sensor chips to provide a half-bridge or full bridge sensor in a standard semiconductor package. The sensor chips may be arranged such that the pinned layers of the different chips are mutually anti-parallel to each other in order to form a push-pull bridge structure. The sensor chips are then interconnected using wire bonding. The chips can be wire-bonded to various standard semiconductor leadframes and packaged in inexpensive standard semiconductor packages. The bridge design may be push-pull or referenced. In the referenced case, the on-chip reference resistors may be implemented without magnetic shielding.
摘要翻译：公开了一种利用磁隧道结的磁阻传感器桥。磁阻传感器桥由一个或多个磁性隧道结传感器芯片组成，以在标准半导体封装中提供半桥或全桥传感器。可以将传感器芯片布置成使得不同芯片的被钉扎层彼此相互反平行以形成推挽桥结构。然后使用引线接合将传感器芯片互连。这些芯片可以引线接合到各种标准的半导体引线框架上，并以廉价的标准半导体封装封装。桥梁设计可能是推拉式或参考式。在所提及的情况下，片上参考电阻器可以在没有磁屏蔽的情况下实现。

6. 发明申请

US20130334634A1 Single-Package Bridge-Type Magnetic-Field Angle Sensor 有权
标题翻译：单封装桥式磁场角传感器
公开(公告)号：US20130334634A1
公开(公告)日：2013-12-19
申请号：US14002738
申请日：2012-03-02
申请人： James Geza Deak , Weifeng Shen , Xiaojun Zhang , Xiaofeng Lei , Insik Jin , Songsheng Xue
发明人： James Geza Deak , Weifeng Shen , Xiaojun Zhang , Xiaofeng Lei , Insik Jin , Songsheng Xue
IPC分类号： H01L43/02
CPC分类号： H01L43/02 , G01B7/30 , G01D5/145 , G01R33/098 , H01L43/08
摘要： A single-package bridge-type magnetic-field angle sensor comprising one or more pairs of magnetic tunnel junction sensor chips rotated relative to each other by 90 degrees in order to detect two magnetic field components in orthogonal directions respectively is disclosed. The magnetic-field angle sensor may comprise a pair of MTJ full-bridges or half-bridges interconnected with a semiconductor package lead. The magnetic-field angle sensor can be packaged into various low-cost standard semiconductor packages.
摘要翻译：公开了一种单包装桥式磁场角传感器，其包括相对于彼此相对旋转90度的一对或多对磁性隧道结传感器芯片，以分别检测正交方向上的两个磁场分量。磁场角传感器可以包括与半导体封装引线互连的一对MTJ全桥或半桥。磁场角传感器可以封装成各种低成本的标准半导体封装。

7. 发明授权

US09116199B2 Full-bridge magnetoresistive rotation sensors and mass fabrication method 有权
标题翻译：全桥磁阻旋转传感器和大量制造方法
公开(公告)号：US09116199B2
公开(公告)日：2015-08-25
申请号：US14002734
申请日：2012-03-02
申请人： James G. Deak , Weifeng Shen , Xiaojun Zhang , Xiaofeng Lei , Insik Jin , Songsheng Xue
发明人： James G. Deak , Weifeng Shen , Xiaojun Zhang , Xiaofeng Lei , Insik Jin , Songsheng Xue
IPC分类号： G01B7/14 , G01B7/30 , G01R33/06 , H01L43/08 , G01R33/09 , B82Y25/00 , G01D5/14 , G01R33/02
CPC分类号： G01R33/098 , B82Y25/00 , G01B7/30 , G01D5/145 , G01R33/093 , H01L43/08
摘要： A single package magnetoresistive angle sensor for use in measuring rotation angle of a magnet is disclosed. The magnetoresistive angle sensor comprises a pair of magnetoresistive sensor chips, wherein one of the chips is rotated by 180-degree rotation relative to the other. The magnetoresistive sensor chips are attached to a standard semiconductor package lead frame to form a single-axis push-pull full-bridge sensor. Each of the magnetoresistive sensor chips comprises a pair of magnetoresistance sensor arms. Each magnetoresistive sensor arm comprises one or more GMR or MTJ sensor elements. The GMR of MTR sensor elements utilize a pined layer. The element blocks of the magnetoresistive sensor electrically are interconnected and connected to the package leads by wirebonding. The magnetoresistive angle sensor can be packaged into various standard semiconductor package designs. Also, provided is a dual-axis push-pull full-bridge magnetoresistive angle sensor comprised of two pairs of magnetoresistive sensor chips.
摘要翻译：公开了一种用于测量磁体旋转角度的单包磁阻角传感器。磁阻角传感器包括一对磁阻传感器芯片，其中一个芯片相对于另一个旋转180度旋转。磁阻传感器芯片附接到标准半导体封装引线框架以形成单轴推挽全桥传感器。每个磁阻传感器芯片包括一对磁阻传感器臂。每个磁阻传感器臂包括一个或多个GMR或MTJ传感器元件。 MTR传感器元件的GMR利用了一个Pined层。磁阻传感器的元件块电连接并通过引线接合连接到封装引线。磁阻角传感器可以封装成各种标准的半导体封装设计。此外，提供了由两对磁阻传感器芯片组成的双轴推挽全桥磁阻角度传感器。

8. 发明申请

US20130335073A1 Full-Bridge Magnetoresistive Rotation Sensors and Mass Fabrication Method 有权
标题翻译：全桥磁阻旋转传感器和大规模制造方法
公开(公告)号：US20130335073A1
公开(公告)日：2013-12-19
申请号：US14002734
申请日：2012-03-02
申请人： James G. Deak , Weifeng Shen , Xiaojun Zhang , Xiaofeng Lei , Insik Jin , Songsheng Xue
发明人： James G. Deak , Weifeng Shen , Xiaojun Zhang , Xiaofeng Lei , Insik Jin , Songsheng Xue
IPC分类号： G01R33/09
CPC分类号： G01R33/098 , B82Y25/00 , G01B7/30 , G01D5/145 , G01R33/093 , H01L43/08
摘要： A single package magnetoresistive angle sensor for use in measuring rotation angle of a magnet is disclosed. The magnetoresistive angle sensor comprises a pair of magnetoresistive sensor chips, wherein one of the chips is rotated by 180-degree rotation relative to the other. The magnetoresistive sensor chips are attached to a standard semiconductor package lead frame to form a single-axis push-pull full-bridge sensor. Each of the magnetoresistive sensor chips comprises a pair of magnetoresistance sensor arms. Each magnetoresistive sensor arm comprises one or more GMR or MTJ sensor elements. The GMR of MTR sensor elements utilize a pined layer. The element blocks of the magnetoresistive sensor electrically are interconnected and connected to the package leads by wirebonding. The magnetoresistive angle sensor can be packaged into various standard semiconductor package designs. Also, provided is a dual-axis push-pull full-bridge magnetoresistive angle sensor comprised of two pairs of magnetoresistive sensor chips.
摘要翻译：公开了一种用于测量磁体旋转角度的单包磁阻角传感器。磁阻角传感器包括一对磁阻传感器芯片，其中一个芯片相对于另一个旋转180度旋转。磁阻传感器芯片附接到标准半导体封装引线框架以形成单轴推挽全桥传感器。每个磁阻传感器芯片包括一对磁阻传感器臂。每个磁阻传感器臂包括一个或多个GMR或MTJ传感器元件。 MTR传感器元件的GMR利用了一个Pined层。磁阻传感器的元件块电连接并通过引线接合连接到封装引线。磁阻角传感器可以封装成各种标准的半导体封装设计。此外，提供了由两对磁阻传感器芯片组成的双轴推挽全桥磁阻角度传感器。

9. 发明申请

US20140225605A1 Mtj three-axis magnetic field sensor and encapsulation method thereof 审中-公开
标题翻译： Mtj三轴磁场传感器及其封装方法
公开(公告)号：US20140225605A1
公开(公告)日：2014-08-14
申请号：US14239859
申请日：2012-08-27
申请人： Xiaofeng Lei , Xiaojun Zhang , Wei Li , Songsheng Xue
发明人： Xiaofeng Lei , Xiaojun Zhang , Wei Li , Songsheng Xue
IPC分类号： G01R33/09 , G01R3/00
CPC分类号： G01R33/098 , G01R3/00 , G01R33/0206 , G01R33/093 , Y10T29/49002
摘要： The present invention discloses a MTJ triaxial magnetic field sensor, comprising an X-axis bridge sensor that has a sensing direction along an X-axis, a Y-axis bridge sensor that has a sensing direction along a Y-axis, a Z-axis sensor that has a sensing direction along a Z-axis, and an ASIC chip connected with and matched to the X-axis, Y-axis, and Z-axis sensor chips. The Z-axis sensor includes a substrate and MTJ magnetoresistive elements deposited on the substrate. The Z axis magnetic field sensor is attached to the ASIC chip along an attachment edge, and an angle is formed between the sensor side of the Z axis magnetic field sensor and the adjacent attachment edge. The attachment edge angle is an acute angle or an obtuse angle. The resulting X, Y, and Z axes are mutually orthogonal. The above design provides a highly integrated sensor with high sensitivity, low power consumption, good linearity, wide dynamic range, excellent thermal stability, and low noise.
摘要翻译：本发明公开了一种MTJ三轴磁场传感器，其特征在于，包括具有沿X轴方向的X轴桥式传感器，具有Y轴感测方向的Y轴桥式传感器，Z轴传感器，其具有沿Z轴的感测方向，以及与X轴，Y轴和Z轴传感器芯片连接并匹配的ASIC芯片。 Z轴传感器包括沉积在衬底上的衬底和MTJ磁阻元件。 Z轴磁场传感器沿着附接边缘附接到ASIC芯片，并且在Z轴磁场传感器的传感器侧和相邻的附接边缘之间形成一角度。附着边角是锐角或钝角。所得到的X，Y和Z轴是相互正交的。上述设计提供了高灵敏度，低功耗，线性度好，动态范围广，热稳定性好，噪音低的高度集成的传感器。

10. 发明授权

US09733316B2 Triaxial magnetic field sensor 有权
公开(公告)号：US09733316B2
公开(公告)日：2017-08-15
申请号：US14239786
申请日：2012-08-27
申请人： Xiaofeng Lei , Xiaojun Zhang , Wei Li , Songsheng Xue
发明人： Xiaofeng Lei , Xiaojun Zhang , Wei Li , Songsheng Xue
IPC分类号： G01R33/02 , G01R33/00 , G01R33/028 , G01R33/09
CPC分类号： G01R33/0206 , G01R33/0005 , G01R33/0052 , G01R33/028 , G01R33/09 , G01R33/093 , G01R33/096 , G01R33/098
摘要： The present invention discloses a triaxial magnetoresistive sensor. It comprises a substrate integrated with a biaxial magnetic field sensor, a Z-axis sensor that has a sensing direction along Z-axis perpendicular to the two axes of the biaxial magnetic field sensor, and an ASIC. The biaxial magnetic field sensor comprises an X-axis bridge sensor and a Y-axis bridge sensor. The Z-axis sensor and the two-axis sensor are electrically interconnected with the ASIC. A single-chip implementation of the triaxial magnetic field sensor comprises a substrate, onto which a triaxial magnetic field sensor and an ASIC are stacked. The triaxial magnetic field sensor comprises an X-axis bridge sensor, a Y-axis bridge sensor, and a Z-axis bridge sensor. The above design provides a highly integrated sensor with high sensitivity, low power consumption, good linearity, wide dynamic range, excellent thermal stability, and low magnetic noise.

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