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1. 发明授权

US09341686B2 Single-package power meter 有权
标题翻译：单包功率计
公开(公告)号：US09341686B2
公开(公告)日：2016-05-17
申请号：US13882133
申请日：2011-10-26
申请人： James G. Deak , Insik Jin , Weifeng Shen , Songsheng Xue
发明人： James G. Deak , Insik Jin , Weifeng Shen , Songsheng Xue
IPC分类号： G01R33/09 , G01R21/00 , G01R21/06 , G01R22/10 , G01R15/20
CPC分类号： G01R33/098 , G01R15/205 , G01R21/00 , G01R21/06 , G01R22/10
摘要： A single-package power meter is disclosed for measuring the power consumed by a load connected to an electrical conductor. The power meter is galvanically isolated from the electrical conductor through the use of magnetic sensors or through the combination of magnetic sensors and capacitors. Instantaneous power consumed at the load and other desired parameters are determined by measuring the voltage of the load and current flowing through the electrical conductor. Current is measured using a magnetic sensor to detect the magnetic field associated with the current flowing through the electrical conductor. Voltage is measured by one of two possible techniques involving magnetic sensors to measure the current flowing through a coil connected in parallel with a load, or through the use of a capacitively coupled voltage divider connected in parallel with the load. An application specific integrated circuit is further disclosed that controls the bias currents of the sensors for autoranging purposes and also for computing desired parameters, such as power consumption.
摘要翻译：公开了一种用于测量连接到电导体的负载消耗的功率的单封装功率计。功率计通过使用磁传感器或通过磁传感器和电容器的组合与电导体电隔离。在负载和其他所需参数下消耗的瞬时功率通过测量负载和电流通过电导体的电流来确定。使用磁传感器测量电流，以检测与流过电导体的电流相关的磁场。电压通过涉及磁传感器的两种可能技术之一来测量，以测量流过与负载并联连接的线圈的电流，或通过使用与负载并联连接的电容耦合分压器。还公开了一种专用集成电路，其控制用于自动量程目的的传感器的偏置电流并且还用于计算期望的参数，例如功率消耗。

2. 发明授权

US08933523B2 Single-chip referenced full-bridge magnetic field sensor 有权
标题翻译：单芯片参考全桥磁场传感器
公开(公告)号：US08933523B2
公开(公告)日：2015-01-13
申请号：US14112928
申请日：2012-04-06
申请人： James G. Deak , Insik Jin , Weifeng Shen , Songsheng Xue , Xiaofeng Lei
发明人： James G. Deak , Insik Jin , Weifeng Shen , Songsheng Xue , Xiaofeng Lei
IPC分类号： H01L27/22 , H01L43/02 , G01R33/09
CPC分类号： H01L43/02 , G01R33/098
摘要： The present invention discloses a single-chip referenced full-bridge magnetoresistive magnetic-field sensor. The single-chip sensor is a Wheatstone bridge arrangement of magnetoresistive sensing elements and reference elements. The sensing elements and reference elements are formed from either magnetic tunnel junctions or giant magnetoresistive materials. The sensitivity of the reference and sensor elements is controlled through one or a combination of magnetic bias, exchange bias, shielding, or shape anisotropy. Moreover, the bridge output is tuned by setting the ratio of the reference and sensor arm resistance values to a predetermined ratio that optimizes the bridge output for offset and symmetry. The single-chip referenced-bridge magnetic field sensor of the present invention exhibits excellent temperature stability, low offset voltage, and excellent voltage symmetry.
摘要翻译：本发明公开了一种单芯片参考全桥磁阻磁场传感器。单芯片传感器是一种惠斯通电桥布置的磁阻感应元件和参考元件。感测元件和参考元件由磁隧道结或巨磁阻材料形成。通过磁偏置，交换偏压，屏蔽或形状各向异性的一种或组合来控制参考和传感器元件的灵敏度。此外，通过将参考和传感器臂电阻值的比率设置为优化桥接输出的偏移和对称性的预定比率来调节桥输出。本发明的单芯片参考桥磁场传感器表现出优异的温度稳定性，低失调电压和优异的电压对称性。

3. 发明申请

US20130271125A1 Isolated Voltage Transducer 有权
标题翻译：隔离式电压传感器
公开(公告)号：US20130271125A1
公开(公告)日：2013-10-17
申请号：US13882111
申请日：2011-10-26
申请人： James G. Deak , Insik Jin , Xiaofeng Lei , Weifeng Shen , Songsheng Xue
发明人： James G. Deak , Insik Jin , Xiaofeng Lei , Weifeng Shen , Songsheng Xue
IPC分类号： G01R33/09
CPC分类号： G01R33/09 , G01R15/148 , G01R15/205 , G01R31/025 , G01R33/0017 , G01R33/091 , G01R33/098
摘要： A transducer is disclosed for detecting the AC and DC voltage difference between two nodes in an electrical circuit and electronically transmitting the measured voltage difference to an electrical system that is electrically isolated from the common mode potential of the two nodes. The voltage drop between two points in a circuit under test is determined by detecting the current flowing through a resistive shunt coil connected in parallel to the test points. Current through the resistive shunt coil is linearly proportional to the voltage difference between the test points, and it is detected by using a magnetic sensor that is separated from the shunt coil by an insulating dielectric barrier. The transducer can be packaged in a standard integrated circuit package in order to provide a small and low cost voltage transducer for test, measurement, control, and signal-isolation applications.
摘要翻译：公开了一种用于检测电路中的两个节点之间的AC和DC电压差的换能器，并将所测量的电压差电传送到与两个节点的共模电位电隔离的电气系统。通过检测流过与测试点并联连接的电阻分流线圈的电流来确定被测电路中两点之间的电压降。通过电阻分流线圈的电流与测试点之间的电压差成线性比例，并且通过使用通过绝缘电介质阻挡层与分流线圈分离的磁传感器来检测电流。传感器可以封装在标准集成电路封装中，以便为测试，测量，控制和信号隔离应用提供一个小型和低成本的电压传感器。

4. 发明授权

US09116199B2 Full-bridge magnetoresistive rotation sensors and mass fabrication method 有权
标题翻译：全桥磁阻旋转传感器和大量制造方法
公开(公告)号：US09116199B2
公开(公告)日：2015-08-25
申请号：US14002734
申请日：2012-03-02
申请人： James G. Deak , Weifeng Shen , Xiaojun Zhang , Xiaofeng Lei , Insik Jin , Songsheng Xue
发明人： James G. Deak , Weifeng Shen , Xiaojun Zhang , Xiaofeng Lei , Insik Jin , Songsheng Xue
IPC分类号： G01B7/14 , G01B7/30 , G01R33/06 , H01L43/08 , G01R33/09 , B82Y25/00 , G01D5/14 , G01R33/02
CPC分类号： G01R33/098 , B82Y25/00 , G01B7/30 , G01D5/145 , G01R33/093 , H01L43/08
摘要： A single package magnetoresistive angle sensor for use in measuring rotation angle of a magnet is disclosed. The magnetoresistive angle sensor comprises a pair of magnetoresistive sensor chips, wherein one of the chips is rotated by 180-degree rotation relative to the other. The magnetoresistive sensor chips are attached to a standard semiconductor package lead frame to form a single-axis push-pull full-bridge sensor. Each of the magnetoresistive sensor chips comprises a pair of magnetoresistance sensor arms. Each magnetoresistive sensor arm comprises one or more GMR or MTJ sensor elements. The GMR of MTR sensor elements utilize a pined layer. The element blocks of the magnetoresistive sensor electrically are interconnected and connected to the package leads by wirebonding. The magnetoresistive angle sensor can be packaged into various standard semiconductor package designs. Also, provided is a dual-axis push-pull full-bridge magnetoresistive angle sensor comprised of two pairs of magnetoresistive sensor chips.
摘要翻译：公开了一种用于测量磁体旋转角度的单包磁阻角传感器。磁阻角传感器包括一对磁阻传感器芯片，其中一个芯片相对于另一个旋转180度旋转。磁阻传感器芯片附接到标准半导体封装引线框架以形成单轴推挽全桥传感器。每个磁阻传感器芯片包括一对磁阻传感器臂。每个磁阻传感器臂包括一个或多个GMR或MTJ传感器元件。 MTR传感器元件的GMR利用了一个Pined层。磁阻传感器的元件块电连接并通过引线接合连接到封装引线。磁阻角传感器可以封装成各种标准的半导体封装设计。此外，提供了由两对磁阻传感器芯片组成的双轴推挽全桥磁阻角度传感器。

5. 发明申请

US20140062471A1 Single-package Power Meter 有权
标题翻译：单包电力仪表
公开(公告)号：US20140062471A1
公开(公告)日：2014-03-06
申请号：US13882133
申请日：2011-10-26
申请人： James G. Deak , Insik Jin , Weifeng Shen , Songsheng Xue
发明人： James G. Deak , Insik Jin , Weifeng Shen , Songsheng Xue
IPC分类号： G01R33/09 , G01R21/00
CPC分类号： G01R33/098 , G01R15/205 , G01R21/00 , G01R21/06 , G01R22/10
摘要： A single-package power meter is disclosed for measuring the power consumed by a load connected to an electrical conductor. The power meter is galvanically isolated from the electrical conductor through the use of magnetic sensors or through the combination of magnetic sensors and capacitors. Instantaneous power consumed at the load and other desired parameters are determined by measuring the voltage of the load and current flowing through the electrical conductor. Current is measured using a magnetic sensor to detect the magnetic field associated with the current flowing through the electrical conductor. Voltage is measured by one of two possible techniques involving magnetic sensors to measure the current flowing through a coil connected in parallel with a load, or through the use of a capacitively coupled voltage divider connected in parallel with the load. An application specific integrated circuit is further disclosed that controls the bias currents of the sensors for autoranging purposes and also for computing desired parameters, such as power consumption.
摘要翻译：公开了一种用于测量连接到电导体的负载消耗的功率的单封装功率计。功率计通过使用磁传感器或通过磁传感器和电容器的组合与电导体电隔离。在负载和其他所需参数下消耗的瞬时功率通过测量负载和电流通过电导体的电流来确定。使用磁传感器测量电流，以检测与流过电导体的电流相关的磁场。电压通过涉及磁传感器的两种可能技术之一来测量，以测量流过与负载并联连接的线圈的电流，或通过使用与负载并联连接的电容耦合分压器。还公开了一种专用集成电路，其控制用于自动量程目的的传感器的偏置电流并且还用于计算期望的参数，例如功率消耗。

6. 发明授权

US09182457B2 Isolated voltage transducer 有权
标题翻译：隔离电压传感器
公开(公告)号：US09182457B2
公开(公告)日：2015-11-10
申请号：US13882111
申请日：2011-10-26
申请人： James G. Deak , Insik Jin , Xiaofeng Lei , Weifeng Shen , Songsheng Xue
发明人： James G. Deak , Insik Jin , Xiaofeng Lei , Weifeng Shen , Songsheng Xue
IPC分类号： G01R33/09 , G01R31/02 , G01R15/14
CPC分类号： G01R33/09 , G01R15/148 , G01R15/205 , G01R31/025 , G01R33/0017 , G01R33/091 , G01R33/098
摘要： A transducer is disclosed for detecting the AC and DC voltage difference between two nodes in an electrical circuit and electronically transmitting the measured voltage difference to an electrical system that is electrically isolated from the common mode potential of the two nodes. The voltage drop between two points in a circuit under test is determined by detecting the current flowing through a resistive shunt coil connected in parallel to the test points. Current through the resistive shunt coil is linearly proportional to the voltage difference between the test points, and it is detected by using a magnetic sensor that is separated from the shunt coil by an insulating dielectric barrier. The transducer can be packaged in a standard integrated circuit package in order to provide a small and low cost voltage transducer for test, measurement, control, and signal-isolation applications.
摘要翻译：公开了一种用于检测电路中的两个节点之间的AC和DC电压差的换能器，并将所测量的电压差电传送到与两个节点的共模电位电隔离的电气系统。通过检测流过与测试点并联连接的电阻分流线圈的电流来确定被测电路中两点之间的电压降。通过电阻分流线圈的电流与测试点之间的电压差成线性比例，并且通过使用通过绝缘电介质阻挡层与分流线圈分离的磁传感器来检测电流。传感器可以封装在标准集成电路封装中，以便为测试，测量，控制和信号隔离应用提供一个小型和低成本的电压传感器。

7. 发明申请

US20140054733A1 SINGLE-CHIP REFERENCED FULL-BRIDGE MAGNETIC FIELD SENSOR 有权
标题翻译：单芯片参考全桥磁场传感器
公开(公告)号：US20140054733A1
公开(公告)日：2014-02-27
申请号：US14112928
申请日：2012-04-06
申请人： James G. Deak , Insik Jin , Weifeng Shen , Songsheng Xue , Xiaofeng Lei
发明人： James G. Deak , Insik Jin , Weifeng Shen , Songsheng Xue , Xiaofeng Lei
IPC分类号： H01L43/02
CPC分类号： H01L43/02 , G01R33/098
摘要： The present invention discloses a single-chip referenced full-bridge magnetoresistive magnetic-field sensor. The single-chip sensor is a Wheatstone bridge arrangement of magnetoresistive sensing elements and reference elements. The sensing elements and reference elements are formed from either magnetic tunnel junctions or giant magnetoresistive materials. The sensitivity of the reference and sensor elements is controlled through one or a combination of magnetic bias, exchange bias, shielding, or shape anisotropy. Moreover, the bridge output is tuned by setting the ratio of the reference and sensor arm resistance values to a predetermined ratio that optimizes the bridge output for offset and symmetry. The single-chip referenced-bridge magnetic field sensor of the present invention exhibits excellent temperature stability, low offset voltage, and excellent voltage symmetry.
摘要翻译：本发明公开了一种单芯片参考全桥磁阻磁场传感器。单芯片传感器是一种惠斯通电桥布置的磁阻感应元件和参考元件。感测元件和参考元件由磁隧道结或巨磁阻材料形成。通过磁偏置，交换偏压，屏蔽或形状各向异性的一种或组合来控制参考和传感器元件的灵敏度。此外，通过将参考和传感器臂电阻值的比率设置为优化桥接输出的偏移和对称性的预定比率来调节桥输出。本发明的单芯片参考桥磁场传感器表现出优异的温度稳定性，低失调电压和优异的电压对称性。

8. 发明申请

US20130335073A1 Full-Bridge Magnetoresistive Rotation Sensors and Mass Fabrication Method 有权
标题翻译：全桥磁阻旋转传感器和大规模制造方法
公开(公告)号：US20130335073A1
公开(公告)日：2013-12-19
申请号：US14002734
申请日：2012-03-02
申请人： James G. Deak , Weifeng Shen , Xiaojun Zhang , Xiaofeng Lei , Insik Jin , Songsheng Xue
发明人： James G. Deak , Weifeng Shen , Xiaojun Zhang , Xiaofeng Lei , Insik Jin , Songsheng Xue
IPC分类号： G01R33/09
CPC分类号： G01R33/098 , B82Y25/00 , G01B7/30 , G01D5/145 , G01R33/093 , H01L43/08
摘要： A single package magnetoresistive angle sensor for use in measuring rotation angle of a magnet is disclosed. The magnetoresistive angle sensor comprises a pair of magnetoresistive sensor chips, wherein one of the chips is rotated by 180-degree rotation relative to the other. The magnetoresistive sensor chips are attached to a standard semiconductor package lead frame to form a single-axis push-pull full-bridge sensor. Each of the magnetoresistive sensor chips comprises a pair of magnetoresistance sensor arms. Each magnetoresistive sensor arm comprises one or more GMR or MTJ sensor elements. The GMR of MTR sensor elements utilize a pined layer. The element blocks of the magnetoresistive sensor electrically are interconnected and connected to the package leads by wirebonding. The magnetoresistive angle sensor can be packaged into various standard semiconductor package designs. Also, provided is a dual-axis push-pull full-bridge magnetoresistive angle sensor comprised of two pairs of magnetoresistive sensor chips.
摘要翻译：公开了一种用于测量磁体旋转角度的单包磁阻角传感器。磁阻角传感器包括一对磁阻传感器芯片，其中一个芯片相对于另一个旋转180度旋转。磁阻传感器芯片附接到标准半导体封装引线框架以形成单轴推挽全桥传感器。每个磁阻传感器芯片包括一对磁阻传感器臂。每个磁阻传感器臂包括一个或多个GMR或MTJ传感器元件。 MTR传感器元件的GMR利用了一个Pined层。磁阻传感器的元件块电连接并通过引线接合连接到封装引线。磁阻角传感器可以封装成各种标准的半导体封装设计。此外，提供了由两对磁阻传感器芯片组成的双轴推挽全桥磁阻角度传感器。

9. 发明授权

US07547559B2 Method for forming MRAM bit having a bottom sense layer utilizing electroless plating 有权
标题翻译：用于形成具有利用无电镀的底部感测层的MRAM钻头的方法
公开(公告)号：US07547559B2
公开(公告)日：2009-06-16
申请号：US11657725
申请日：2007-01-25
申请人： Hasan Nejad , James G. Deak
发明人： Hasan Nejad , James G. Deak
IPC分类号： H01L21/00
CPC分类号： H01L27/222 , H01L43/12
摘要： The present invention provides a method of forming an MRAM cell which minimizes the occurrence of electrical shorts during fabrication. A first conductor in a trench is provided in an insulating layer and an upper surface of the insulating layer and the first conductor is planarized. Then, a dielectric layer is deposited to a thickness slightly greater than the desired final thickness of a sense layer, which is formed later. The dielectric layer is then patterned and etched to form an opening for the cell shapes over the first conductor. Then, a permalloy is electroplated in the cell shapes to form the sense layer. The sense layer and dielectric layer are flattened and then a nonmagnetic tunnel barrier layer is deposited. Finally, the pinned layer is formed over the tunnel barrier layer.
摘要翻译：本发明提供一种形成MRAM单元的方法，该方法在制造期间使电短路的发生最小化。沟槽中的第一导体设置在绝缘层中，并且绝缘层和第一导体的上表面被平坦化。然后，电介质层被沉积成稍大于稍后形成的感应层的期望最终厚度的厚度。然后对电介质层进行图案化和蚀刻，以形成第一导体上的电池形状的开口。然后，将坡莫合金电镀在电池形状中以形成感测层。感应层和电介质层被平坦化，然后沉积非磁性隧道势垒层。最后，在隧道势垒层上方形成钉扎层。

10. 发明授权

US07468664B2 Enclosure tamper detection and protection 有权
公开(公告)号：US07468664B2
公开(公告)日：2008-12-23
申请号：US11788616
申请日：2007-04-20
申请人： James M. Daughton , James G. Deak
发明人： James M. Daughton , James G. Deak
IPC分类号： G08B13/24
CPC分类号： G01R33/093 , B82Y25/00 , G11C11/1695
摘要： A tamper detecting enclosure arrangement for enclosures containing an interior space in which a protected item is positioned having a magnetoresistive sensing memory storage cell positioned in or near the protected item in the enclosure having a two state offset magnetoresistance versus externally applied magnetic field. A magnet is positioned at a selected separation distance from the magnetoresistive sensing memory storage cell to thereby provide a magnetic field about the magnetoresistive sensing memory storage cell if said enclosure has not been opened in such a manner as to result in substantially increasing said separation distance.

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