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    • 9. 发明授权
    • Method of manufacturing a thin-film transistor with reinforced drain and
source electrodes
    • 制造具有加强漏极和源极的薄膜晶体管的方法
    • US6050827A
    • 2000-04-18
    • US4661
    • 1993-01-14
    • Sadatoshi TakechiTadanori HishidaFumiaki Funada
    • Sadatoshi TakechiTadanori HishidaFumiaki Funada
    • H01L29/78G02F1/136G02F1/1368H01L21/336H01L27/12H01L29/40H01L29/417H01L29/45H01L29/49H01L29/786
    • H01L29/66765H01L29/41733H01L29/458H01L29/4908H01L29/78681Y10S438/944
    • A thin film transistor where source and drain electrodes are film laminates including at least two layers. A first layer film of the laminate, which is formed to a thickness of 10 to 700 .ANG. is in ohmic contact with underlying semiconductor film. A second layer film, formed on the first layer film has a thickness of more than about 2000 .ANG. and is a material having a sufficient adhesion strength even when formed at a temperature which is less than the temperature corresponding to the materials vapor pressure. Further, the materials used for the source and drain electrodes can be formed into thin films by ordinary sputtering or vacuum deposition techniques, low in cost, and readily available. A thin film transistor according to the present invention is formed on a substrate by the steps of: forming a gate electrode on the substrate; oxidizing the gate electrode to form a gate insulating film, the gate electrode and the gate insulating film forming a step; forming a thin film semiconductor on the gate insulating film; forming a first layer film portion of a source and drain electrode film laminate on the thin film semiconductor and in ohmic contact with the thin film semiconductor; and forming a second layer film portion of the source and drain electrode film laminate, the second layer film being an adhesion layer, convering the first layer film, and having a sufficient thickness to provide a continuous film across the step.
    • 一种薄膜晶体管,其中源极和漏极是包括至少两个层的薄膜叠层。 形成为10至700厚度的层压体的第一层膜与下面的半导体膜欧姆接触。 形成在第一层膜上的第二层膜具有大于约2000的厚度,并且即使在低于对应于材料蒸气压的温度的温度下形成时,也具有足够的粘合强度的材料。 此外,用于源电极和漏电极的材料可以通过普通溅射或真空沉积技术形成为薄膜,成本低且易于获得。 根据本发明的薄膜晶体管通过以下步骤形成在衬底上:在衬底上形成栅电极; 氧化栅电极以形成栅极绝缘膜,栅电极和栅绝缘膜形成步骤; 在栅极绝缘膜上形成薄膜半导体; 在所述薄膜半导体上形成源极和漏极电极膜层叠体的第一层膜部分,并与所述薄膜半导体欧姆接触; 以及形成所述源极和漏极电极膜层压体的第二层膜部分,所述第二层膜是粘合层,使所述第一层膜会聚,并且具有足够的厚度以在所述台阶上提供连续的膜。