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1. 发明授权

US5423940A Supersonic molecular beam etching of surfaces 失效
标题翻译：表面超音速分子束蚀刻
公开(公告)号：US5423940A
公开(公告)日：1995-06-13
申请号：US114710
申请日：1993-08-31
申请人： Lee Chen , Shwu-Jen Jeng , Wesley C. Natzle , Chienfan Yu
发明人： Lee Chen , Shwu-Jen Jeng , Wesley C. Natzle , Chienfan Yu
IPC分类号： C23F4/02 , C23F4/00 , H01L21/302 , H01L21/311 , H01J21/00
CPC分类号： H01L21/31116 , C23F4/00
摘要： In supersonic molecular beam etching, the reactivity of the etchant gas and substrate surface is improved by creating etchant gas molecules with high internal energies through chemical reactions of precursor molecules, forming clusters of etchant gas molecules in a reaction chamber, expanding the etchant gas molecules and clusters of etchant gas molecules through a nozzle into a vacuum, and directing the molecules and clusters of molecules onto a substrate. Translational energy of the molecules and clusters of molecules can be improved by seeding with inert gas molecules. The process provides improved controllability, surface purity, etch selectivity and anisotropy. Etchant molecules may also be expanded directly (without reaction in a chamber) to produce clusters whose translational energy can be increased through expansion with a seeding gas.
摘要翻译：在超音速分子束蚀刻中，蚀刻剂气体和衬底表面的反应性通过通过前体分子的化学反应产生具有高内能的蚀刻剂气体分子来改善，在反应室中形成蚀刻剂气体分子簇，使蚀刻剂气体分子膨胀，蚀刻剂气体分子的簇通过喷嘴进入真空，并将分子和分子簇引导到基底上。可以通过用惰性气体分子进行接种来改善分子和分子团簇的平移能。该方法提供改进的可控性，表面纯度，蚀刻选择性和各向异性。蚀刻剂分子也可以直接扩增（在室中没有反应）以产生其平移能量可以通过用接种气体膨胀而增加的簇。

2. 发明授权

US5282925A Device and method for accurate etching and removal of thin film 失效
标题翻译：用于精确蚀刻和去除薄膜的装置和方法
公开(公告)号：US5282925A
公开(公告)日：1994-02-01
申请号：US973380
申请日：1992-11-09
申请人： Shwu-Jen Jeng , Wesley C. Natzle , Chienfan Yu
发明人： Shwu-Jen Jeng , Wesley C. Natzle , Chienfan Yu
IPC分类号： C23F4/00 , H01L21/00 , H01L21/302 , H01L21/3065 , H01L21/311 , B44C1/22 , C03C15/00 , C03C25/06
CPC分类号： H01L21/67069 , H01L21/31116
摘要： New device and method are described for accurate etching and removal of thin layer by controlling the surface residence time, thickness and composition of reactant containing film. Etching of silicon dioxide at low pressure using a quartz crystal microbalance is illustrated. Usefulness of the invention in the manufacture of microelectronic devices is shown.
摘要翻译：描述了通过控制含反应物膜的表面停留时间，厚度和组成来精确蚀刻和去除薄层的新装置和方法。示出了使用石英晶体微量天平在低压下的二氧化硅蚀刻。示出了本发明在制造微电子器件中的用途。

3. 发明授权

US5286331A Supersonic molecular beam etching of surfaces 失效
标题翻译：表面超音速分子束蚀刻
公开(公告)号：US5286331A
公开(公告)日：1994-02-15
申请号：US786448
申请日：1991-11-01
申请人： Lee Chen , Shwu-Jen Jeng , Wesley C. Natzle , Chienfan Yu
发明人： Lee Chen , Shwu-Jen Jeng , Wesley C. Natzle , Chienfan Yu
IPC分类号： C23F4/02 , C23F4/00 , H01L21/302 , H01L21/311 , H01L21/00
CPC分类号： H01L21/31116 , C23F4/00
摘要： In supersonic molecular beam etching, the reactivity of the etchant gas and substrate surface is improved by creating etchant gas molecules with high internal energies through chemical reactions of precursor molecules, forming clusters of etchant gas molecules in a reaction chamber, expanding the etchant gas molecules and clusters of etchant gas molecules through a nozzle into a vacuum, and directing the molecules and clusters of molecules onto a substrate. Translational energy of the molecules and clusters of molecules can be improved by seeding with inert gas molecules. The process provides improved controllability, surface purity, etch selectivity and anisotropy. Etchant molecules may also be expanded directly (without reaction in a chamber) to produce clusters whose translational energy can be increased through expansion with a seeding gas.
摘要翻译：在超音速分子束蚀刻中，蚀刻剂气体和衬底表面的反应性通过通过前体分子的化学反应产生具有高内能的蚀刻剂气体分子来改善，在反应室中形成蚀刻剂气体分子簇，使蚀刻剂气体分子膨胀，蚀刻剂气体分子的簇通过喷嘴进入真空，并将分子和分子簇引导到基底上。可以通过用惰性气体分子进行接种来改善分子和分子团簇的平移能。该方法提供改进的可控性，表面纯度，蚀刻选择性和各向异性。蚀刻剂分子也可以直接扩增（在室中没有反应）以产生其平移能量可以通过用接种气体膨胀而增加的簇。

4. 发明授权

US5876879A Oxide layer patterned by vapor phase etching 失效
标题翻译：通过气相蚀刻图案化的氧化物层
公开(公告)号：US5876879A
公开(公告)日：1999-03-02
申请号：US865258
申请日：1997-05-29
申请人： Richard L. Kleinhenz , Wesley C. Natzle , Chienfan Yu
发明人： Richard L. Kleinhenz , Wesley C. Natzle , Chienfan Yu
IPC分类号： H01L21/311 , G03F9/00
CPC分类号： H01L21/31116 , H01L21/31144
摘要： Hydrogen fluoride undercut of oxide layers may be reduced by using a low pressure mixture of gaseous hydrogen fluoride and gaseous ammonia mixture. Organic photoresists can be used as a masking material when using the gaseous hydrogen fluoride/ammonia mixture without resulting in an enhanced reaction rate. In addition, because of the reaction conditions, the dimensions in the oxide layer being etched can be specifically sized smaller than openings made in the overcoating masking material.
摘要翻译：可以通过使用气态氟化氢和气态氨混合物的低压混合物来降低氧化物层的氟化氢底切。当使用气态氟化氢/氨混合物时，有机光致抗蚀剂可用作掩蔽材料，而不会导致增强的反应速率。此外，由于反应条件，被蚀刻的氧化物层中的尺寸可以特别地小于在外涂掩模材料中制成的开口的尺寸。

5. 发明授权

US5838055A Trench sidewall patterned by vapor phase etching 失效
标题翻译：通过气相蚀刻图案化的沟槽侧壁
公开(公告)号：US5838055A
公开(公告)日：1998-11-17
申请号：US865261
申请日：1997-05-29
申请人： Richard L. Kleinhenz , Wesley C. Natzle , Chienfan Yu
发明人： Richard L. Kleinhenz , Wesley C. Natzle , Chienfan Yu
IPC分类号： H01L21/02 , H01L21/311 , H01L27/108
CPC分类号： H01L28/40 , H01L21/31111 , H01L21/31144
摘要： Hydrogen fluoride undercut of oxide layers may be reduced by using a low pressure mixture of gaseous hydrogen fluoride and gaseous ammonia mixture. Organic photoresists can be used as a masking material when using the gaseous hydrogen fluoride/ammonia mixture without resulting in an enhanced reaction rate. In addition, because of the reaction conditions, the dimensions in the oxide layer being etched can be specifically sized smaller than openings made in the overcoating masking material.
摘要翻译：可以通过使用气态氟化氢和气态氨混合物的低压混合物来降低氧化物层的氟化氢底切。当使用气态氟化氢/氨混合物时，有机光致抗蚀剂可用作掩蔽材料，而不会导致增强的反应速率。此外，由于反应条件，被蚀刻的氧化物层中的尺寸可以特别地小于在外涂掩模材料中制成的开口的尺寸。

6. 发明授权

US5636320A Sealed chamber with heating lamps provided within transparent tubes 失效
标题翻译：带加热灯的密封室设在透明管内
公开(公告)号：US5636320A
公开(公告)日：1997-06-03
申请号：US452466
申请日：1995-05-26
申请人： Chienfan Yu , David E. Kotecki , Wesley C. Natzle
发明人： Chienfan Yu , David E. Kotecki , Wesley C. Natzle
IPC分类号： C30B25/10 , C30B31/12 , F26B3/28 , H01L21/205 , F26B19/00 , F27D1/00
CPC分类号： C30B25/10 , C30B31/12 , F26B3/283
摘要： A reactor is provided for heating a workpiece in a sealed environment. The reactor has a chamber with a gas inlet port, a gas outlet port, and at least one tube for receiving a heat source. The tube passes from outside the chamber into the inside of the chamber without breaking the chamber seal. Alternately, the tubes may be used for treating the workpiece with light, in combination with or instead of heat treatment.
摘要翻译：提供反应器用于在密封环境中加热工件。反应器具有具有气体入口，气体出口和至少一个用于接收热源的管的室。管从腔室外部进入腔室内部，而不破坏腔室密封。替代地，管可以用于与光结合或代替热处理用于处理工件。

7. 发明授权

US6074951A Vapor phase etching of oxide masked by resist or masking material 失效
标题翻译：由抗蚀剂或掩模材料掩蔽的氧化物的气相蚀刻
公开(公告)号：US6074951A
公开(公告)日：2000-06-13
申请号：US865260
申请日：1997-05-29
申请人： Richard L. Kleinhenz , Wesley C. Natzle , Chienfan Yu
发明人： Richard L. Kleinhenz , Wesley C. Natzle , Chienfan Yu
IPC分类号： H01L21/311 , H01L21/768
CPC分类号： H01L21/31144 , H01L21/31116 , H01L21/76804
摘要： Hydrogen fluoride undercut of oxide layers may be reduced by using a low pressure mixture of gaseous hydrogen fluoride and gaseous ammonia mixture. Organic photoresists can be used as a masking material when using the gaseous hydrogen fluoride/ammonia mixture without resulting in an enhanced reaction rate. In addition, because of the reaction conditions, the dimensions in the oxide layer being etched can be specifically sized smaller than openings made in the overcoating masking material.
摘要翻译：可以通过使用气态氟化氢和气态氨混合物的低压混合物来降低氧化物层的氟化氢底切。当使用气态氟化氢/氨混合物时，有机光致抗蚀剂可用作掩蔽材料，而不会导致增强的反应速率。此外，由于反应条件，被蚀刻的氧化物层中的尺寸可以特别地小于在外涂掩模材料中制成的开口的尺寸。

8. 发明授权

US06884734B2 Vapor phase etch trim structure with top etch blocking layer 失效
标题翻译：具有顶部蚀刻阻挡层的气相蚀刻修整结构
公开(公告)号：US06884734B2
公开(公告)日：2005-04-26
申请号：US09989822
申请日：2001-11-20
申请人： Frederick W. Buehrer , Derek Chen , William Chu , Scott Crowder , Sadanand V. Deshpande , David V. Horak , Wesley C. Natzle , Hung Y. Ng , Len Y. Tsou , Chienfan Yu
发明人： Frederick W. Buehrer , Derek Chen , William Chu , Scott Crowder , Sadanand V. Deshpande , David V. Horak , Wesley C. Natzle , Hung Y. Ng , Len Y. Tsou , Chienfan Yu
IPC分类号： H01L21/033 , H01L21/28 , H01L21/302 , H01L21/3205 , H01L21/3213 , H01L21/461 , H01L21/8234
CPC分类号： H01L21/32139 , H01L21/0337 , H01L21/0338 , H01L21/28123
摘要： A blocking layer is formed on a hard mask having an initial thickness. Lines are fabricated by patterning the blocking layer and the hard mask to provide a line segment, the line segment having a first dimension measured across the line segment; reacting a surface layer of the line segment to form a layer of a reaction product on a remaining portion of the line segment; and removing the reaction product without attacking the remaining portion of the line segment and without attacking the blocking layer and the substrate to form the line segment with a second dimension across the line segment that is smaller than the first dimension. The blocking layer prevents the formation of reaction product on the hard mask so that the initial thickness of the hard mask is maintained. The blocking layer can also serve as an ARC layer for photoresist patterning so that the use of an additional film layer is not required.
摘要翻译：在具有初始厚度的硬掩模上形成阻挡层。线通过图案化阻挡层和硬掩模来制造以提供线段，线段具有跨越线段测量的第一尺寸; 使所述线段的表面层反应以在所述线段的剩余部分上形成反应产物层; 并且除去反应产物而不攻击线段的剩余部分，而不攻击阻挡层和基底，以形成跨越比第一尺寸小的线段的具有第二尺寸的线段。阻挡层防止在硬掩模上形成反应产物，从而保持硬掩模的初始厚度。阻挡层也可以用作光致抗蚀剂图案化的ARC层，从而不需要使用附加的膜层。

9. 发明授权

US6071815A Method of patterning sidewalls of a trench in integrated circuit manufacturing 失效
标题翻译：在集成电路制造中构图沟槽侧壁的方法
公开(公告)号：US6071815A
公开(公告)日：2000-06-06
申请号：US145269
申请日：1998-09-02
申请人： Richard L. Kleinhenz , Wesley C. Natzle , Chienfan Yu
发明人： Richard L. Kleinhenz , Wesley C. Natzle , Chienfan Yu
IPC分类号： H01L21/02 , H01L21/311 , H01L21/44
CPC分类号： H01L28/40 , H01L21/31111 , H01L21/31144
摘要： A method of patterning a layer on sidewalls of a trench in a substrate for integrated circuits includes the steps of forming an insulator layer on sidewalls of a trench in a substrate with a horizontal top surface above the sidewalls, recessing a masking material such as an organic photoresist in the trench below the top surface of the substrate such that a portion of the insulator layer on the sidewalls of the substrate is exposed, and etching the insulator layer with a gaseous hydrogen flouride-ammonia mixture. The masking material and the substrate are composed of a different material than the insulator layer.
摘要翻译：在用于集成电路的衬底中的沟槽的侧壁上图案化层的方法包括以下步骤：在衬底中的沟槽的侧壁上形成绝缘体层，在侧壁上方具有水平顶表面，凹陷掩模材料，例如有机在衬底的顶表面下方的沟槽中的光致抗蚀剂，使得暴露衬底的侧壁上的绝缘体层的一部分，并用气态氢氟酸 - 氨混合物蚀刻绝缘体层。掩模材料和衬底由与绝缘体层不同的材料构成。

10. 发明授权

US5766971A Oxide strip that improves planarity 失效
标题翻译：改善平面度的氧化物条
公开(公告)号：US5766971A
公开(公告)日：1998-06-16
申请号：US768010
申请日：1996-12-13
申请人： David C. Ahlgren , Gary B. Bronner , Wesley C. Natzle , Erick G. Walton , Chienfan Yu
发明人： David C. Ahlgren , Gary B. Bronner , Wesley C. Natzle , Erick G. Walton , Chienfan Yu
IPC分类号： H01L21/76 , H01L21/311 , H01L21/762
CPC分类号： H01L21/76224 , H01L21/31116 , Y10S148/05
摘要： A process for stripping thin layers of oxide such as sacrificial pad oxide employs etching chemistry that widens cracks to remove shallow cracks and limit the widening of deep cracks, thereby producing a final oxide surface on thick layers of oxide that is less rough than prior art methods and enabling the fabrication of oxide-filled trenches that have geometries and/or surface smoothness that were previously impossible.
摘要翻译：用于剥离薄层氧化物（例如牺牲衬垫氧化物）的方法采用蚀刻化学法，其加宽裂纹以除去浅裂纹并限制深裂纹的扩大，从而在厚的氧化层上产生比现有技术方法更粗糙的最终氧化物表面并且能够制造具有之前不可能具有几何形状和/或表面光滑度的氧化物填充沟槽。

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