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    • 1. 发明授权
    • Supersonic molecular beam etching of surfaces
    • 表面超音速分子束蚀刻
    • US5423940A
    • 1995-06-13
    • US114710
    • 1993-08-31
    • Lee ChenShwu-Jen JengWesley C. NatzleChienfan Yu
    • Lee ChenShwu-Jen JengWesley C. NatzleChienfan Yu
    • C23F4/02C23F4/00H01L21/302H01L21/311H01J21/00
    • H01L21/31116C23F4/00
    • In supersonic molecular beam etching, the reactivity of the etchant gas and substrate surface is improved by creating etchant gas molecules with high internal energies through chemical reactions of precursor molecules, forming clusters of etchant gas molecules in a reaction chamber, expanding the etchant gas molecules and clusters of etchant gas molecules through a nozzle into a vacuum, and directing the molecules and clusters of molecules onto a substrate. Translational energy of the molecules and clusters of molecules can be improved by seeding with inert gas molecules. The process provides improved controllability, surface purity, etch selectivity and anisotropy. Etchant molecules may also be expanded directly (without reaction in a chamber) to produce clusters whose translational energy can be increased through expansion with a seeding gas.
    • 在超音速分子束蚀刻中,蚀刻剂气体和衬底表面的反应性通过通过前体分子的化学反应产生具有高内能的蚀刻剂气体分子来改善,在反应室中形成蚀刻剂气体分子簇,使蚀刻剂气体分子膨胀, 蚀刻剂气体分子的簇通过喷嘴进入真空,并将分子和分子簇引导到基底上。 可以通过用惰性气体分子进行接种来改善分子和分子团簇的平移能。 该方法提供改进的可控性,表面纯度,蚀刻选择性和各向异性。 蚀刻剂分子也可以直接扩增(在室中没有反应)以产生其平移能量可以通过用接种气体膨胀而增加的簇。
    • 3. 发明授权
    • Supersonic molecular beam etching of surfaces
    • 表面超音速分子束蚀刻
    • US5286331A
    • 1994-02-15
    • US786448
    • 1991-11-01
    • Lee ChenShwu-Jen JengWesley C. NatzleChienfan Yu
    • Lee ChenShwu-Jen JengWesley C. NatzleChienfan Yu
    • C23F4/02C23F4/00H01L21/302H01L21/311H01L21/00
    • H01L21/31116C23F4/00
    • In supersonic molecular beam etching, the reactivity of the etchant gas and substrate surface is improved by creating etchant gas molecules with high internal energies through chemical reactions of precursor molecules, forming clusters of etchant gas molecules in a reaction chamber, expanding the etchant gas molecules and clusters of etchant gas molecules through a nozzle into a vacuum, and directing the molecules and clusters of molecules onto a substrate. Translational energy of the molecules and clusters of molecules can be improved by seeding with inert gas molecules. The process provides improved controllability, surface purity, etch selectivity and anisotropy. Etchant molecules may also be expanded directly (without reaction in a chamber) to produce clusters whose translational energy can be increased through expansion with a seeding gas.
    • 在超音速分子束蚀刻中,蚀刻剂气体和衬底表面的反应性通过通过前体分子的化学反应产生具有高内能的蚀刻剂气体分子来改善,在反应室中形成蚀刻剂气体分子簇,使蚀刻剂气体分子膨胀, 蚀刻剂气体分子的簇通过喷嘴进入真空,并将分子和分子簇引导到基底上。 可以通过用惰性气体分子进行接种来改善分子和分子团簇的平移能。 该方法提供改进的可控性,表面纯度,蚀刻选择性和各向异性。 蚀刻剂分子也可以直接扩增(在室中没有反应)以产生其平移能量可以通过用接种气体膨胀而增加的簇。