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1. 发明申请

US20120097963A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120097963A1
公开(公告)日：2012-04-26
申请号：US13341045
申请日：2011-12-30
申请人： Chiho KOKUBO , Aiko Shiga , Shunpei Yamazaki , Hidekazu Miyairi , Koji Dairiki , Koichiro Tanaka
发明人： Chiho KOKUBO , Aiko Shiga , Shunpei Yamazaki , Hidekazu Miyairi , Koji Dairiki , Koichiro Tanaka
IPC分类号： H01L29/04 , H01L21/20
CPC分类号： H01L29/78675 , H01L27/1214 , H01L27/1222 , H01L27/127 , H01L27/1285 , H01L29/04 , H01L29/66757
摘要： A first shape of semiconductor region having on its one side a plurality of sharp convex top-end portions is formed first and a continuous wave laser beam is used for radiation from the above region so as to crystallize the first shape of semiconductor region. A continuous wave laser beam condensed in one or plural lines is used for the laser beam. The first shape of semiconductor region is etched to form a second shape of semiconductor region in which a channel forming region and a source and drain region are formed. The second shape of semiconductor region is disposed so that a channel foaming range would be formed on respective crystal regions extending from the plurality of convex end portions. A semiconductor region adjacent to the channel forming region is eliminated.
摘要翻译：首先形成在其一侧具有多个尖锐的凸顶部的半导体区域的第一形状，并且使用连续波激光束进行来自上述区域的辐射，以使半导体区域的第一形状结晶化。在一条或多条线路中聚光的连续波激光束用于激光束。蚀刻半导体区域的第一形状以形成其中形成沟道形成区域和源极和漏极区域的半导体区域的第二形状。半导体区域的第二形状被设置成在从多个凸出端部延伸的各个晶体区域上形成沟道发泡范围。消除了与沟道形成区域相邻的半导体区域。

2. 发明授权

US07915099B2 Beam irradiation apparatus, beam irradiation method, and method for manufacturing semiconductor device 有权
标题翻译：光束照射装置，光束照射方法以及半导体装置的制造方法
公开(公告)号：US07915099B2
公开(公告)日：2011-03-29
申请号：US11785966
申请日：2007-04-23
申请人： Shunpei Yamazaki , Koichiro Tanaka , Hidekazu Miyairi
发明人： Shunpei Yamazaki , Koichiro Tanaka , Hidekazu Miyairi
IPC分类号： H01L21/00 , H01L21/84 , H01L21/20 , H01L21/36
CPC分类号： H01L21/02683 , B23K26/082 , B23K26/0821 , H01L21/02691 , H01L21/2026 , H01L27/1285
摘要： The speed of the laser scanned by the scanning means such as a galvanometer mirror or a polygon mirror is not constant in the center portion and in the end portion of the scanning width. As a result, the object, for example an amorphous semiconductor film, is irradiated with the excessive energy and therefore there is a risk that the amorphous semiconductor film is peeled. In the present invention, in the case where the laser spot of the energy beam output continuously on the irradiated object is scanned by moving it back and forth with the use of the scanning means or the like, the beam is irradiated to the outside of the element-forming region when the scanning speed of the spot is not the predetermined value, for example when the speed is not constant, and accelerates, decelerates, or is zero, for example in the positions where the scanning direction changes, or where the scanning starts or ends.
摘要翻译：由扫描装置如电流计镜或多面镜扫描的激光的速度在扫描宽度的中央部分和末端部分中不是恒定的。结果，物体（例如非晶半导体膜）被过量的能量照射，因此存在非晶半导体膜剥离的风险。在本发明中，在通过使用扫描装置等来前后移动在被照射物体上连续输出的能量束的激光光斑进行扫描的情况下，将光束照射到当点的扫描速度不是预定值时，例如当速度不恒定并且例如在扫描方向改变的位置加速，减速或为零时，或者扫描开始或结束

3. 发明授权

US07749907B2 Method for manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US07749907B2
公开(公告)日：2010-07-06
申请号：US11841361
申请日：2007-08-20
申请人： Hidekazu Miyairi , Koichiro Tanaka , Hironobu Shoji , Shunpei Yamazaki
发明人： Hidekazu Miyairi , Koichiro Tanaka , Hironobu Shoji , Shunpei Yamazaki
IPC分类号： H01L21/461
CPC分类号： H01L27/1288 , H01L21/0337 , H01L21/3086 , H01L21/32139 , H01L27/1214 , H01L29/66765 , H01L29/78633
摘要： A first layer is formed over a substrate, a light absorbing layer is formed over the first layer, and a layer having a light-transmitting property is formed over the light absorbing layer. The light absorbing layer is selectively irradiated with a laser beam via the layer having a light-transmitting property. When the light absorbing layer absorbs energy of the laser beam, due to emission of gas that is within the light absorbing layer, or sublimation, evaporation, or the like of the light absorbing layer, a part of the light absorbing layer and a part of the layer having a light-transmitting property in contact with the light absorbing layer are removed. By using the remaining part of the layer having a light-transmitting property or the remaining part of the light absorbing layer as a mask and etching the first layer, the first layer can be processed into a desired shape.
摘要翻译：第一层形成在衬底上，在第一层上形成光吸收层，并且在光吸收层上形成具有透光性的层。通过具有透光性的层，用激光束选择性地照射光吸收层。当光吸收层吸收激光束的能量时，由于光吸收层内的气体的发射或者光吸收层的升华，蒸发等，一部分光吸收层和除去与光吸收层接触的透光性的层。通过使用具有透光性的层的剩余部分或光吸收层的剩余部分作为掩模，并蚀刻第一层，可以将第一层加工成所需的形状。

4. 发明授权

US06933527B2 Semiconductor device and semiconductor device production system 失效
标题翻译：半导体器件和半导体器件生产系统
公开(公告)号：US06933527B2
公开(公告)日：2005-08-23
申请号：US10330025
申请日：2002-12-27
申请人： Atsuo Isobe , Koji Dairiki , Hiroshi Shibata , Chiho Kokubo , Tatsuya Arao , Masahiko Hayakawa , Hidekazu Miyairi , Akihisa Shimomura , Koichiro Tanaka , Shunpei Yamazaki , Mai Akiba
发明人： Atsuo Isobe , Koji Dairiki , Hiroshi Shibata , Chiho Kokubo , Tatsuya Arao , Masahiko Hayakawa , Hidekazu Miyairi , Akihisa Shimomura , Koichiro Tanaka , Shunpei Yamazaki , Mai Akiba
IPC分类号： H01L21/20 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/786 , H01L29/104 , H01L31/036 , H01L31/0376 , H01L31/20
CPC分类号： H01L21/02683 , H01L21/2022 , H01L27/1281 , H01L27/1296 , H01L29/66757 , H01L29/78603 , H01L29/78675 , H01L29/78696
摘要： It is a problem to provide a semiconductor device production system using a laser crystallization method capable of preventing grain boundaries from forming in a TFT channel region and further preventing conspicuous lowering in TFT mobility due to grain boundaries, on-current decrease or off-current increase. An insulation film is formed on a substrate, and a semiconductor film is formed on the insulation film. Due to this, preferentially formed is a region in the semiconductor film to be concentratedly applied by stress during crystallization with laser light. Specifically, a stripe-formed or rectangular concavo-convex is formed on the semiconductor film. Continuous-oscillation laser light is irradiated along the striped concavo-convex or along a direction of a longer or shorter axis of rectangle.
摘要翻译：提供一种使用能够防止在TFT沟道区域中形成晶界的激光晶体化方法的半导体器件制造系统的问题，并且进一步防止由于晶界引起的TFT迁移率的明显降低，导通电流降低或截止电流增加。在基板上形成绝缘膜，在绝缘膜上形成半导体膜。由此，优选形成半导体膜中通过激光在结晶期间通过应力集中施加的区域。具体地，在半导体膜上形成条状或矩形凹凸。连续振荡激光沿着条纹凹凸或长轴或短轴方向照射。

5. 发明授权

US08093593B2 Semiconductor device having multichannel transistor 有权
标题翻译：具有多通道晶体管的半导体器件
公开(公告)号：US08093593B2
公开(公告)日：2012-01-10
申请号：US11516616
申请日：2006-09-07
申请人： Chiho Kokubo , Aiko Shiga , Shunpei Yamazaki , Hidekazu Miyairi , Koji Dairiki , Koichiro Tanaka
发明人： Chiho Kokubo , Aiko Shiga , Shunpei Yamazaki , Hidekazu Miyairi , Koji Dairiki , Koichiro Tanaka
IPC分类号： H01L29/10
CPC分类号： H01L29/78675 , H01L27/1214 , H01L27/1222 , H01L27/127 , H01L27/1285 , H01L29/04 , H01L29/66757
摘要： A first shape of semiconductor region having on its one side a plurality of sharp convex top-end portions is formed first and a continuous wave laser beam is used for radiation from the above region so as to crystallize the first shape of semiconductor region. A continuous wave laser beam condensed in one or plural lines is used for the laser beam. The first shape of semiconductor region is etched to form a second shape of semiconductor region in which a channel forming region and a source and drain region are formed. The second shape of semiconductor region is disposed so that a channel forming range would be formed on respective crystal regions extending from the plurality of convex end portions. A semiconductor region adjacent to the channel forming region is eliminated.
摘要翻译：首先形成在其一侧具有多个尖锐的凸顶部的半导体区域的第一形状，并且使用连续波激光束进行来自上述区域的辐射，以使半导体区域的第一形状结晶化。在一条或多条线路中聚光的连续波激光束用于激光束。蚀刻半导体区域的第一形状以形成其中形成沟道形成区域和源极和漏极区域的半导体区域的第二形状。半导体区域的第二形状被设置成在从多个凸起端部延伸的各个晶体区域上形成沟道形成范围。消除了与沟道形成区域相邻的半导体区域。

6. 发明授权

US08044372B2 Laser apparatus, laser irradiation method, semiconductor manufacturing method, semiconductor device, and electronic equipment 有权
标题翻译：激光装置，激光照射方法，半导体制造方法，半导体装置和电子设备
公开(公告)号：US08044372B2
公开(公告)日：2011-10-25
申请号：US11812557
申请日：2007-06-20
申请人： Shunpei Yamazaki , Koichiro Tanaka , Hidekazu Miyairi , Aiko Shiga , Akihisa Shimomura , Mai Akiba
发明人： Shunpei Yamazaki , Koichiro Tanaka , Hidekazu Miyairi , Aiko Shiga , Akihisa Shimomura , Mai Akiba
IPC分类号： G21G1/00
CPC分类号： H01L21/02683 , B23K26/0823 , B23K2101/40 , H01L21/2026 , H01L27/1285 , H01L27/1296 , H01L27/3244 , Y10S438/973
摘要： Continuous wave laser apparatus with enhanced processing efficiency is provided as well as a method of manufacturing a semiconductor device using the laser apparatus. The laser apparatus has: a laser oscillator; a unit for rotating a process object; a unit for moving the center of the rotation along a straight line; and an optical system for processing laser light that is outputted from the laser oscillator to irradiate with the laser light a certain region within the moving range of the process object. The laser apparatus is characterized in that the certain region is on a line extended from the straight line and that the position at which the certain region overlaps the process object is moved by rotating the process object while moving the center of the rotation along the straight line.
摘要翻译：提供了具有增强的处理效率的连续波激光装置以及使用该激光装置的半导体装置的制造方法。激光装置具有：激光振荡器; 用于旋转过程对象的单元; 沿着直线移动旋转中心的单元; 以及用于处理从激光振荡器输出的激光的光学系统，用于将激光照射到处理对象的移动范围内的特定区域。所述激光装置的特征在于，所述特定区域处于从所述直线延伸的线上，并且所述特定区域与所述加工对象重叠的位置通过使所述加工对象旋转而沿着所述直线移动所述旋转中心而被移动。

7. 发明授权

US07652286B2 Semiconductor device and semiconductor device producing system 有权
标题翻译：半导体器件和半导体器件生产系统
公开(公告)号：US07652286B2
公开(公告)日：2010-01-26
申请号：US11529392
申请日：2006-09-29
申请人： Atsuo Isobe , Koji Dairiki , Hiroshi Shibata , Chiho Kokubo , Tatsuya Arao , Masahiko Hayakawa , Hidekazu Miyairi , Akihisa Shimomura , Koichiro Tanaka , Shunpei Yamazaki , Mai Akiba
发明人： Atsuo Isobe , Koji Dairiki , Hiroshi Shibata , Chiho Kokubo , Tatsuya Arao , Masahiko Hayakawa , Hidekazu Miyairi , Akihisa Shimomura , Koichiro Tanaka , Shunpei Yamazaki , Mai Akiba
IPC分类号： H01L29/76
CPC分类号： H01L21/02683 , B23K26/032 , B23K26/0608 , B23K26/067 , B23K26/0738 , B23K26/0853 , B23K26/10 , B23K26/702 , B23K2101/40 , H01L21/2026 , H01L27/1281 , H01L29/78603
摘要： An insulating film having depressions and projections are formed on a substrate. A semiconductor film is formed on the insulating film. Thus, for crystallization by using laser light, a part where stress concentrates is selectively formed in the semiconductor film. More specifically, stripe or rectangular depressions and projections are provided in the semiconductor film. Then, continuous-wave laser light is irradiated along the stripe depressions and projections formed in the semiconductor film or in a direction of a major axis or minor axis of the rectangle.
摘要翻译：在基板上形成具有凹凸的绝缘膜。在绝缘膜上形成半导体膜。因此，对于通过使用激光的结晶，在半导体膜中选择性地形成应力集中的部分。更具体地，在半导体膜中设置条纹或矩形的凹凸。然后，连续波激光沿着形成在半导体膜中的条形凹部和突起或矩形的长轴或短轴的方向照射。

8. 发明授权

US07439107B2 Laser irradiation apparatus, method of irradiating laser light, and method of manufacturing a semiconductor device 有权
标题翻译：激光照射装置，照射激光的方法以及半导体装置的制造方法
公开(公告)号：US07439107B2
公开(公告)日：2008-10-21
申请号：US10744138
申请日：2003-12-24
申请人： Shunpei Yamazaki , Hidekazu Miyairi , Akihisa Shimomura , Koichiro Tanaka , Koji Dairiki
发明人： Shunpei Yamazaki , Hidekazu Miyairi , Akihisa Shimomura , Koichiro Tanaka , Koji Dairiki
IPC分类号： H01L21/00 , H01L21/44
CPC分类号： G02B26/02 , B23K26/064 , B23K26/0643 , B23K26/0648 , B23K26/0652 , B23K2101/40 , G02B7/008 , H01L27/1285
摘要： When the laser light is irradiated with high output in the manufacturing process for a semiconductor device, an attenuator is heated and cause a deformation due to the laser light scattered in the attenuator. As a result, the attenuation ratio of the attenuator fluctuates, and it is difficult to process the substrate with the homogeneous irradiation energy. It is a problem of the present invention to provide a laser irradiation apparatus, a method of irradiating laser light and a method of manufacturing a semiconductor device, which can perform the laser irradiation effectively and homogeneously. In the present invention, the thermal energy generated in an attenuator is absorbed by means of cooling in order to keep the temperature of the attenuator constant. By cooling the attenuator so as to prevent the change of the attenuation ratio, the function of the attenuator is protected. In addition, the energy fluctuation of the laser light irradiated on the substrate is also prevented. The attenuator includes an attenuator which separates a damper portion physically and cools the damper (refer to FIG. 4), and also includes an attenuator which cools the whole attenuator (refer to FIG. 7).
摘要翻译：当在半导体器件的制造工艺中激光以高输出照射时，衰减器被加热并且由于在衰减器中散射的激光引起变形。结果，衰减器的衰减比波动，并且难以以均匀的照射能量处理衬底。本发明的目的是提供一种能够有效且均匀地进行激光照射的激光照射装置，照射激光的方法和半导体装置的制造方法。在本发明中，通过冷却来吸收在衰减器中产生的热能，以使衰减器的温度保持恒定。通过冷却衰减器以防止衰减比的变化，衰减器的功能得到保护。此外，还防止了照射在基板上的激光的能量波动。衰减器包括衰减器，其将物理上的阻尼器部分分隔开并使风门冷却（参见图4），并且还包括冷却整个衰减器的衰减器（参见图7）。

9. 发明申请

US20080050921A1 Method for Manufacturing Semiconductor Device 失效
标题翻译：半导体器件制造方法
公开(公告)号：US20080050921A1
公开(公告)日：2008-02-28
申请号：US11841361
申请日：2007-08-20
申请人： Hidekazu Miyairi , Koichiro Tanaka , Hironobu Shoji , Shunpei Yamazaki
发明人： Hidekazu Miyairi , Koichiro Tanaka , Hironobu Shoji , Shunpei Yamazaki
IPC分类号： H01L21/311
CPC分类号： H01L27/1288 , H01L21/0337 , H01L21/3086 , H01L21/32139 , H01L27/1214 , H01L29/66765 , H01L29/78633
摘要： A first layer is formed over a substrate, a light absorbing layer is formed over the first layer, and a layer having a light-transmitting property is formed over the light absorbing layer. The light absorbing layer is selectively irradiated with a laser beam via the layer having a light-transmitting property. When the light absorbing layer absorbs energy of the laser beam, due to emission of gas that is within the light absorbing layer, or sublimation, evaporation, or the like of the light absorbing layer, a part of the light absorbing layer and a part of the layer having a light-transmitting property in contact with the light absorbing layer are removed. By using the remaining part of the layer having a light-transmitting property or the remaining part of the light absorbing layer as a mask and etching the first layer, the first layer can be processed into a desired shape.
摘要翻译：第一层形成在衬底上，在第一层上形成光吸收层，并且在光吸收层上形成具有透光性的层。通过具有透光性的层，用激光束选择性地照射光吸收层。当光吸收层吸收激光束的能量时，由于光吸收层内的气体的发射或者光吸收层的升华，蒸发等，一部分光吸收层和除去与光吸收层接触的透光性的层。通过使用具有透光性的层的剩余部分或光吸收层的剩余部分作为掩模，并蚀刻第一层，可以将第一层加工成所需的形状。

10. 发明申请

US20070246664A1 Laser apparatus, laser irradiation method, semiconductor manufacturing method, semiconductor device, and electronic equipment 有权
标题翻译：激光装置，激光照射方法，半导体制造方法，半导体装置和电子设备
公开(公告)号：US20070246664A1
公开(公告)日：2007-10-25
申请号：US11812557
申请日：2007-06-20
申请人： Shunpei Yamazaki , Koichiro Tanaka , Hidekazu Miyairi , Aiko Shiga , Akihisa Shimomura , Mai Akiba
发明人： Shunpei Yamazaki , Koichiro Tanaka , Hidekazu Miyairi , Aiko Shiga , Akihisa Shimomura , Mai Akiba
IPC分类号： G01N21/00
CPC分类号： H01L21/02683 , B23K26/0823 , B23K2101/40 , H01L21/2026 , H01L27/1285 , H01L27/1296 , H01L27/3244 , Y10S438/973
摘要： Continuous wave laser apparatus with enhanced processing efficiency is provided as well as a method of manufacturing a semiconductor device using the laser apparatus. The laser apparatus has: a laser oscillator; a unit for rotating a process object; a unit for moving the center of the rotation along a straight line; and an optical system for processing laser light that is outputted from the laser oscillator to irradiate with the laser light a certain region within the moving range of the process object. The laser apparatus is characterized in that the certain region is on a line extended from the straight line and that the position at which the certain region overlaps the process object is moved by rotating the process object while moving the center of the rotation along the straight line.
摘要翻译：提供了具有增强的处理效率的连续波激光装置以及使用该激光装置的半导体装置的制造方法。激光装置具有：激光振荡器; 用于旋转过程对象的单元; 沿着直线移动旋转中心的单元; 以及用于处理从激光振荡器输出的激光的光学系统，用于将激光照射到处理对象的移动范围内的特定区域。所述激光装置的特征在于，所述特定区域处于从所述直线延伸的线上，并且所述特定区域与所述加工对象重叠的位置通过使所述加工对象旋转而沿着所述直线移动所述旋转中心而被移动。

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