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1. 发明授权

US08093593B2 Semiconductor device having multichannel transistor 有权
标题翻译：具有多通道晶体管的半导体器件
公开(公告)号：US08093593B2
公开(公告)日：2012-01-10
申请号：US11516616
申请日：2006-09-07
申请人： Chiho Kokubo , Aiko Shiga , Shunpei Yamazaki , Hidekazu Miyairi , Koji Dairiki , Koichiro Tanaka
发明人： Chiho Kokubo , Aiko Shiga , Shunpei Yamazaki , Hidekazu Miyairi , Koji Dairiki , Koichiro Tanaka
IPC分类号： H01L29/10
CPC分类号： H01L29/78675 , H01L27/1214 , H01L27/1222 , H01L27/127 , H01L27/1285 , H01L29/04 , H01L29/66757
摘要： A first shape of semiconductor region having on its one side a plurality of sharp convex top-end portions is formed first and a continuous wave laser beam is used for radiation from the above region so as to crystallize the first shape of semiconductor region. A continuous wave laser beam condensed in one or plural lines is used for the laser beam. The first shape of semiconductor region is etched to form a second shape of semiconductor region in which a channel forming region and a source and drain region are formed. The second shape of semiconductor region is disposed so that a channel forming range would be formed on respective crystal regions extending from the plurality of convex end portions. A semiconductor region adjacent to the channel forming region is eliminated.
摘要翻译：首先形成在其一侧具有多个尖锐的凸顶部的半导体区域的第一形状，并且使用连续波激光束进行来自上述区域的辐射，以使半导体区域的第一形状结晶化。在一条或多条线路中聚光的连续波激光束用于激光束。蚀刻半导体区域的第一形状以形成其中形成沟道形成区域和源极和漏极区域的半导体区域的第二形状。半导体区域的第二形状被设置成在从多个凸起端部延伸的各个晶体区域上形成沟道形成范围。消除了与沟道形成区域相邻的半导体区域。

2. 发明授权

US07109069B2 Semiconductor device and method of manufacturing the same 有权
公开(公告)号：US07109069B2
公开(公告)日：2006-09-19
申请号：US10321841
申请日：2002-12-18
申请人： Chiho Kokubo , Aiko Shiga , Shunpei Yamazaki , Hidekazu Miyairi , Koji Dairiki , Koichiro Tanaka
发明人： Chiho Kokubo , Aiko Shiga , Shunpei Yamazaki , Hidekazu Miyairi , Koji Dairiki , Koichiro Tanaka
IPC分类号： H01L21/00
CPC分类号： H01L29/78675 , H01L27/1214 , H01L27/1222 , H01L27/127 , H01L27/1285 , H01L29/04 , H01L29/66757
摘要： In a conventional method of crystallization using a laser beam, variance (or dispersion) in a TFT characteristic becomes large, which causes various functions of a semiconductor device comprising TFTs as components of its electronic circuit to be restrained.A first shape of semiconductor region having on its one side a plurality of sharp convex top-end portions is formed first and a continuous wave laser beam is used for radiation from the above region so as to crystallize the first shape of semiconductor region. A continuous wave laser beam condensed in one or plural lines is used for the laser beam. The first shape of semiconductor region is etched to form a second shape of semiconductor region in which a channel forming region and a source and drain region are formed. The second shape of semiconductor region is disposed so that a channel forming range would be formed on respective crystal regions extending from the plurality of convex end portions. A semiconductor region adjacent to the channel forming region is eliminated.

3. 发明申请

US20120097963A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120097963A1
公开(公告)日：2012-04-26
申请号：US13341045
申请日：2011-12-30
申请人： Chiho KOKUBO , Aiko Shiga , Shunpei Yamazaki , Hidekazu Miyairi , Koji Dairiki , Koichiro Tanaka
发明人： Chiho KOKUBO , Aiko Shiga , Shunpei Yamazaki , Hidekazu Miyairi , Koji Dairiki , Koichiro Tanaka
IPC分类号： H01L29/04 , H01L21/20
CPC分类号： H01L29/78675 , H01L27/1214 , H01L27/1222 , H01L27/127 , H01L27/1285 , H01L29/04 , H01L29/66757
摘要： A first shape of semiconductor region having on its one side a plurality of sharp convex top-end portions is formed first and a continuous wave laser beam is used for radiation from the above region so as to crystallize the first shape of semiconductor region. A continuous wave laser beam condensed in one or plural lines is used for the laser beam. The first shape of semiconductor region is etched to form a second shape of semiconductor region in which a channel forming region and a source and drain region are formed. The second shape of semiconductor region is disposed so that a channel foaming range would be formed on respective crystal regions extending from the plurality of convex end portions. A semiconductor region adjacent to the channel forming region is eliminated.
摘要翻译：首先形成在其一侧具有多个尖锐的凸顶部的半导体区域的第一形状，并且使用连续波激光束进行来自上述区域的辐射，以使半导体区域的第一形状结晶化。在一条或多条线路中聚光的连续波激光束用于激光束。蚀刻半导体区域的第一形状以形成其中形成沟道形成区域和源极和漏极区域的半导体区域的第二形状。半导体区域的第二形状被设置成在从多个凸出端部延伸的各个晶体区域上形成沟道发泡范围。消除了与沟道形成区域相邻的半导体区域。

4. 发明申请

US20070001228A1 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070001228A1
公开(公告)日：2007-01-04
申请号：US11516616
申请日：2006-09-07
申请人： Chiho Kokubo , Aiko Shiga , Shunpei Yamazaki , Hidekazu Miyairi , Koji Dairiki , Koichiro Tanaka
发明人： Chiho Kokubo , Aiko Shiga , Shunpei Yamazaki , Hidekazu Miyairi , Koji Dairiki , Koichiro Tanaka
IPC分类号： H01L27/12
CPC分类号： H01L29/78675 , H01L27/1214 , H01L27/1222 , H01L27/127 , H01L27/1285 , H01L29/04 , H01L29/66757
摘要： In a conventional method of crystallization using a laser beam, variance (or dispersion) in a TFT characteristic becomes large, which causes various functions of a semiconductor device comprising TFTs as components of its electronic circuit to be restrained. A first shape of semiconductor region having on its one side a plurality of sharp convex top-end portions is formed first and a continuous wave laser beam is used for radiation from the above region so as to crystallize the first shape of semiconductor region. A continuous wave laser beam condensed in one or plural lines is used for the laser beam. The first shape of semiconductor region is etched to form a second shape of semiconductor region in which a channel forming region and a source and drain region are formed. The second shape of semiconductor region is disposed so that a channel forming range would be formed on respective crystal regions extending from the plurality of convex end portions. A semiconductor region adjacent to the channel forming region is eliminated.
摘要翻译：在使用激光束的传统的结晶方法中，TFT特性中的方差（或色散）变大，这导致包含作为其电子电路的部件的TFT的半导体器件的各种功能被抑制。首先形成在其一侧具有多个尖锐的凸顶部的半导体区域的第一形状，并且使用连续波激光束进行来自上述区域的辐射，以使半导体区域的第一形状结晶化。在一条或多条线路中聚光的连续波激光束用于激光束。蚀刻半导体区域的第一形状以形成其中形成沟道形成区域和源极和漏极区域的半导体区域的第二形状。半导体区域的第二形状被设置成在从多个凸起端部延伸的各个晶体区域上形成沟道形成范围。消除了与沟道形成区域相邻的半导体区域。

5. 发明授权

US07135389B2 Irradiation method of laser beam 有权
公开(公告)号：US07135389B2
公开(公告)日：2006-11-14
申请号：US10318290
申请日：2002-12-13
申请人： Shunpei Yamazaki , Chiho Kokubo , Aiko Shiga , Koichiro Tanaka , Hidekazu Miyairi , Koji Dairiki
发明人： Shunpei Yamazaki , Chiho Kokubo , Aiko Shiga , Koichiro Tanaka , Hidekazu Miyairi , Koji Dairiki
IPC分类号： H01L21/36 , H01L21/84 , H01L21/20
CPC分类号： H01L21/0268 , B23K26/0604 , B23K26/0608 , B23K26/0738 , H01L21/02683 , H01L21/02691 , H01L21/2026
摘要： A laser irradiation method using a laser crystallization method which can heighten an efficiency of substrate processing as compared to a conventional one and also heighten mobility of a semiconductor film is provided. It is an irradiation method of a laser beam in which, pattern information of a sub-island formed on a substrate is stored, and a beam spot of a laser beam is condensed so as to become linear, and by use of the stored pattern information, a scanning path of the beam spot is determined so as to include the sub-island, and by moving the beam spot along the scanning path, the laser beam is irradiated to the sub-island, characterized in that on the occasion of scanning the beam spot, when the beam spot has reached to the sub-island, the beam spot and the sub-island are contacted at a plurality of points.

6. 发明授权

US07582162B2 Semiconductor device and semiconductor device production system 有权
标题翻译：半导体器件和半导体器件生产系统
公开(公告)号：US07582162B2
公开(公告)日：2009-09-01
申请号：US11600833
申请日：2006-11-17
申请人： Atsuo Isobe , Shunpei Yamazaki , Koji Dairiki , Hiroshi Shibata , Chiho Kokubo , Tatsuya Arao , Masahiko Hayakawa , Hidekazu Miyairi , Akihisa Shimomura , Koichiro Tanaka , Mai Akiba
发明人： Atsuo Isobe , Shunpei Yamazaki , Koji Dairiki , Hiroshi Shibata , Chiho Kokubo , Tatsuya Arao , Masahiko Hayakawa , Hidekazu Miyairi , Akihisa Shimomura , Koichiro Tanaka , Mai Akiba
IPC分类号： C30B11/00 , C30B15/26 , H01L21/335
CPC分类号： H01L27/1222 , B23K26/0738 , H01L21/02354 , H01L21/02356 , H01L21/02675 , H01L21/02683 , H01L21/02686 , H01L21/02691 , H01L21/2026 , H01L21/32139 , H01L21/84 , H01L27/1214 , H01L27/1218 , H01L27/124 , H01L27/1255 , H01L27/1274 , H01L27/1281 , H01L27/1296 , H01L29/66757 , H01L29/78603 , H01L29/78675 , H01L29/78696 , Y10S118/90 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.
摘要翻译：提供了一种使用激光晶化方法的半导体器件制造系统，其可以避免在TFT的沟道形成区域中形成晶界，从而防止晶界大大降低TFT的迁移率，降低导通电流，并且提高截止电流。在绝缘膜上形成矩形或条纹图案凹陷和突出部分。在绝缘膜上形成半导体膜。通过沿着条形图案凹陷和绝缘膜的突出部分沿着矩形的长轴或短轴方向运行激光来对连续波激光照射半导体膜。尽管在激光中最优选连续波激光，但也可以在照射半导体膜时使用脉冲振荡激光。

7. 发明授权

US07148507B2 Semiconductor device having thin film transistor with position controlled channel formation region 有权
标题翻译：具有具有位置控制沟道形成区域的薄膜晶体管的半导体器件
公开(公告)号：US07148507B2
公开(公告)日：2006-12-12
申请号：US11013539
申请日：2004-12-17
申请人： Atsuo Isobe , Shunpei Yamazaki , Koji Dairiki , Hiroshi Shibata , Chiho Kokubo , Tatsuya Arao , Masahiko Hayakawa , Hidekazu Miyairi , Akihisa Shimomura , Koichiro Tanaka , Mai Akiba
发明人： Atsuo Isobe , Shunpei Yamazaki , Koji Dairiki , Hiroshi Shibata , Chiho Kokubo , Tatsuya Arao , Masahiko Hayakawa , Hidekazu Miyairi , Akihisa Shimomura , Koichiro Tanaka , Mai Akiba
IPC分类号： H01L21/84 , H01L31/36
CPC分类号： H01L27/1222 , B23K26/0738 , H01L21/02354 , H01L21/02356 , H01L21/02675 , H01L21/02683 , H01L21/02686 , H01L21/02691 , H01L21/2026 , H01L21/32139 , H01L21/84 , H01L27/1214 , H01L27/1218 , H01L27/124 , H01L27/1255 , H01L27/1274 , H01L27/1281 , H01L27/1296 , H01L29/66757 , H01L29/78603 , H01L29/78675 , H01L29/78696 , Y10S118/90 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.
摘要翻译：提供了一种使用激光晶化方法的半导体器件制造系统，其可以避免在TFT的沟道形成区域中形成晶界，从而防止晶界大大降低TFT的迁移率，降低导通电流，并且提高截止电流。在绝缘膜上形成矩形或条纹图案凹陷和突出部分。在绝缘膜上形成半导体膜。通过沿着条形图案凹陷和绝缘膜的突出部分沿着矩形的长轴或短轴方向运行激光来对连续波激光照射半导体膜。尽管在激光中最优选连续波激光，但也可以在照射半导体膜时使用脉冲振荡激光。

8. 发明授权

US06933527B2 Semiconductor device and semiconductor device production system 失效
标题翻译：半导体器件和半导体器件生产系统
公开(公告)号：US06933527B2
公开(公告)日：2005-08-23
申请号：US10330025
申请日：2002-12-27
申请人： Atsuo Isobe , Koji Dairiki , Hiroshi Shibata , Chiho Kokubo , Tatsuya Arao , Masahiko Hayakawa , Hidekazu Miyairi , Akihisa Shimomura , Koichiro Tanaka , Shunpei Yamazaki , Mai Akiba
发明人： Atsuo Isobe , Koji Dairiki , Hiroshi Shibata , Chiho Kokubo , Tatsuya Arao , Masahiko Hayakawa , Hidekazu Miyairi , Akihisa Shimomura , Koichiro Tanaka , Shunpei Yamazaki , Mai Akiba
IPC分类号： H01L21/20 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/786 , H01L29/104 , H01L31/036 , H01L31/0376 , H01L31/20
CPC分类号： H01L21/02683 , H01L21/2022 , H01L27/1281 , H01L27/1296 , H01L29/66757 , H01L29/78603 , H01L29/78675 , H01L29/78696
摘要： It is a problem to provide a semiconductor device production system using a laser crystallization method capable of preventing grain boundaries from forming in a TFT channel region and further preventing conspicuous lowering in TFT mobility due to grain boundaries, on-current decrease or off-current increase. An insulation film is formed on a substrate, and a semiconductor film is formed on the insulation film. Due to this, preferentially formed is a region in the semiconductor film to be concentratedly applied by stress during crystallization with laser light. Specifically, a stripe-formed or rectangular concavo-convex is formed on the semiconductor film. Continuous-oscillation laser light is irradiated along the striped concavo-convex or along a direction of a longer or shorter axis of rectangle.
摘要翻译：提供一种使用能够防止在TFT沟道区域中形成晶界的激光晶体化方法的半导体器件制造系统的问题，并且进一步防止由于晶界引起的TFT迁移率的明显降低，导通电流降低或截止电流增加。在基板上形成绝缘膜，在绝缘膜上形成半导体膜。由此，优选形成半导体膜中通过激光在结晶期间通过应力集中施加的区域。具体地，在半导体膜上形成条状或矩形凹凸。连续振荡激光沿着条纹凹凸或长轴或短轴方向照射。

9. 发明授权

US07652286B2 Semiconductor device and semiconductor device producing system 有权
标题翻译：半导体器件和半导体器件生产系统
公开(公告)号：US07652286B2
公开(公告)日：2010-01-26
申请号：US11529392
申请日：2006-09-29
申请人： Atsuo Isobe , Koji Dairiki , Hiroshi Shibata , Chiho Kokubo , Tatsuya Arao , Masahiko Hayakawa , Hidekazu Miyairi , Akihisa Shimomura , Koichiro Tanaka , Shunpei Yamazaki , Mai Akiba
发明人： Atsuo Isobe , Koji Dairiki , Hiroshi Shibata , Chiho Kokubo , Tatsuya Arao , Masahiko Hayakawa , Hidekazu Miyairi , Akihisa Shimomura , Koichiro Tanaka , Shunpei Yamazaki , Mai Akiba
IPC分类号： H01L29/76
CPC分类号： H01L21/02683 , B23K26/032 , B23K26/0608 , B23K26/067 , B23K26/0738 , B23K26/0853 , B23K26/10 , B23K26/702 , B23K2101/40 , H01L21/2026 , H01L27/1281 , H01L29/78603
摘要： An insulating film having depressions and projections are formed on a substrate. A semiconductor film is formed on the insulating film. Thus, for crystallization by using laser light, a part where stress concentrates is selectively formed in the semiconductor film. More specifically, stripe or rectangular depressions and projections are provided in the semiconductor film. Then, continuous-wave laser light is irradiated along the stripe depressions and projections formed in the semiconductor film or in a direction of a major axis or minor axis of the rectangle.
摘要翻译：在基板上形成具有凹凸的绝缘膜。在绝缘膜上形成半导体膜。因此，对于通过使用激光的结晶，在半导体膜中选择性地形成应力集中的部分。更具体地，在半导体膜中设置条纹或矩形的凹凸。然后，连续波激光沿着形成在半导体膜中的条形凹部和突起或矩形的长轴或短轴的方向照射。

10. 发明授权

US07176490B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07176490B2
公开(公告)日：2007-02-13
申请号：US11087652
申请日：2005-03-24
申请人： Atsuo Isobe , Koji Dairiki , Hiroshi Shibata , Chiho Kokubo , Tatsuya Arao , Masahiko Hayakawa , Hidekazu Miyairi , Akihisa Shimomura , Koichiro Tanaka , Shunpei Yamazaki , Mai Akiba
发明人： Atsuo Isobe , Koji Dairiki , Hiroshi Shibata , Chiho Kokubo , Tatsuya Arao , Masahiko Hayakawa , Hidekazu Miyairi , Akihisa Shimomura , Koichiro Tanaka , Shunpei Yamazaki , Mai Akiba
IPC分类号： H01L29/104
CPC分类号： H01L21/02683 , H01L21/2022 , H01L27/1281 , H01L27/1296 , H01L29/66757 , H01L29/78603 , H01L29/78675 , H01L29/78696
摘要： It is a problem to provide a semiconductor device production system using a laser crystallization method capable of preventing grain boundaries from forming in a TFT channel region and further preventing conspicuous lowering in TFT mobility due to grain boundaries, on-current decrease or off-current increase. An insulation film is formed on a substrate, and a semiconductor film is formed on the insulation film. Due to this, preferentially formed is a region in the semiconductor film to be concentratedly applied by stress during crystallization with laser light. Specifically, a stripe-formed or rectangular concavo-convex is formed on the semiconductor film. Continuous-oscillation laser light is irradiated along the striped concavo-convex or along a direction of a longer or shorter axis of rectangle.
摘要翻译：提供一种使用能够防止在TFT沟道区域中形成晶界的激光晶体化方法的半导体器件制造系统的问题，并且进一步防止由于晶界引起的TFT迁移率的明显降低，导通电流降低或截止电流增加。在基板上形成绝缘膜，在绝缘膜上形成半导体膜。由此，优选形成半导体膜中通过激光在结晶期间通过应力集中施加的区域。具体地，在半导体膜上形成条状或矩形凹凸。连续振荡激光沿着条纹凹凸或长轴或短轴方向照射。

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