专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20120231580A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20120231580A1
公开(公告)日：2012-09-13
申请号：US13413684
申请日：2012-03-07
申请人： Shunpei YAMAZAKI , Yuhei SATO , Keiji SATO , Tetsunori MARUYAMA , Junichi KOEZUKA
发明人： Shunpei YAMAZAKI , Yuhei SATO , Keiji SATO , Tetsunori MARUYAMA , Junichi KOEZUKA
IPC分类号： H01L21/42
CPC分类号： H01L21/40 , H01L21/02175 , H01L21/02252 , H01L21/02565 , H01L21/02636 , H01L21/02664 , H01L21/324 , H01L21/383 , H01L21/477 , H01L27/1225 , H01L29/66742 , H01L29/66969 , H01L29/7869
摘要： In a manufacturing process of a transistor including an oxide semiconductor film, oxygen doping treatment is performed on the oxide semiconductor film, and then heat treatment is performed on the oxide semiconductor film and an aluminum oxide film provided over the oxide semiconductor film. Consequently, an oxide semiconductor film which includes a region containing more oxygen than a stoichiometric composition is formed. The transistor formed using the oxide semiconductor film can have high reliability because the amount of change in the threshold voltage of the transistor by a bias-temperature stress test (BT test) is reduced.
摘要翻译：在包括氧化物半导体膜的晶体管的制造过程中，对氧化物半导体膜进行氧掺杂处理，然后对氧化物半导体膜和设置在氧化物半导体膜上的氧化铝膜进行热处理。因此，形成包含比化学计量组成物多的氧的区域的氧化物半导体膜。使用氧化物半导体膜形成的晶体管可以具有高的可靠性，因为通过偏压 - 温度应力测试（BT测试）的晶体管的阈值电压的变化量减小。

2. 发明申请

US20120231581A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20120231581A1
公开(公告)日：2012-09-13
申请号：US13413686
申请日：2012-03-07
申请人： Shunpei YAMAZAKI , Yuhei SATO , Keiji SATO , Tetsunori MARUYAMA
发明人： Shunpei YAMAZAKI , Yuhei SATO , Keiji SATO , Tetsunori MARUYAMA
IPC分类号： H01L21/36
CPC分类号： H01L29/78693
摘要： In a process of manufacturing a transistor including an oxide semiconductor layer, an amorphous oxide semiconductor layer which includes a region containing excess oxygen as compared to a stoichiometric composition ratio of an oxide semiconductor in a crystalline state is formed over a silicon oxide film, an aluminum oxide film is formed over the amorphous oxide semiconductor layer, and then heat treatment is performed so that at least part of the amorphous oxide semiconductor layer is crystallized and an oxide semiconductor layer which includes a crystal having a c-axis substantially perpendicular to a surface of the oxide semiconductor layer is formed.
摘要翻译：在制造包括氧化物半导体层的晶体管的工艺中，在氧化硅膜上形成包含与结晶态的氧化物半导体的化学计量组成比相比含有过量氧的区域的非晶氧化物半导体层，铝在非晶形氧化物半导体层上形成氧化膜，然后进行热处理，使得非晶氧化物半导体层的至少一部分结晶，并且包含具有c轴的晶体的氧化物半导体层，该晶体基本上垂直于形成氧化物半导体层。

3. 发明申请

US20100117073A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100117073A1
公开(公告)日：2010-05-13
申请号：US12612021
申请日：2009-11-04
申请人： Shunpei YAMAZAKI , Junichiro SAKATA , Tetsunori MARUYAMA , Yuki IMOTO , Yuji ASANO , Junichi KOEZUKA
发明人： Shunpei YAMAZAKI , Junichiro SAKATA , Tetsunori MARUYAMA , Yuki IMOTO , Yuji ASANO , Junichi KOEZUKA
IPC分类号： H01L29/786 , H01L21/34
CPC分类号： H01L29/66742 , C04B35/58 , C04B2235/3284 , C04B2235/3286 , H01L27/1225 , H01L29/66969 , H01L29/78618 , H01L29/7869
摘要： In a thin film transistor which uses an oxide semiconductor, buffer layers containing indium, gallium, zinc, oxygen, and nitrogen are provided between the oxide semiconductor layer and the source and drain electrode layers.
摘要翻译：在使用氧化物半导体的薄膜晶体管中，在氧化物半导体层和源极和漏极电极层之间设置包含铟，镓，锌，氧和氮的缓冲层。

4. 发明申请

US20110070693A1 METHOD FOR MANUFACTURING OXIDE SEMICONDUCTOR FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造氧化物半导体膜的方法和制造半导体器件的方法
公开(公告)号：US20110070693A1
公开(公告)日：2011-03-24
申请号：US12888846
申请日：2010-09-23
申请人： Shunpei YAMAZAKI , Junichiro SAKATA , Akiharu MIYANAGA , Masayuki SAKAKURA , Junichi KOEZUKA , Tetsunori MARUYAMA , Yuki IMOTO
发明人： Shunpei YAMAZAKI , Junichiro SAKATA , Akiharu MIYANAGA , Masayuki SAKAKURA , Junichi KOEZUKA , Tetsunori MARUYAMA , Yuki IMOTO
IPC分类号： H01L21/34 , C23C14/34
CPC分类号： H01L29/66742 , C23C14/086 , H01L21/02422 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L29/7869
摘要： An object is to provide an oxide semiconductor having stable electric characteristics and a semiconductor device including the oxide semiconductor. A manufacturing method of a semiconductor film by a sputtering method includes the steps of holding a substrate in a treatment chamber which is kept in a reduced-pressure state; heating the substrate at lower than 400° C.; introducing a sputtering gas from which hydrogen and moisture are removed in the state where remaining moisture in the treatment chamber is removed; and forming an oxide semiconductor film over the substrate with use of a metal oxide which is provided in the treatment chamber as a target. When the oxide semiconductor film is formed, remaining moisture in a reaction atmosphere is removed; thus, the concentration of hydrogen and the concentration of hydride in the oxide semiconductor film can be reduced. Thus, the oxide semiconductor film can be stabilized.
摘要翻译：目的是提供具有稳定电特性的氧化物半导体和包括氧化物半导体的半导体器件。通过溅射法制造半导体膜的方法包括将基板保持在保持在减压状态的处理室中的步骤; 在低于400℃下加热基材。在去除处理室中的剩余水分的状态下引入除去氢气和水分的溅射气体; 以及使用设置在处理室中的金属氧化物作为目标，在基板上形成氧化物半导体膜。当形成氧化物半导体膜时，除去反应气氛中的剩余水分; 因此，可以降低氧化物半导体膜中的氢浓度和氢化物浓度。因此，可以使氧化物半导体膜稳定。

5. 发明申请

US20110068336A1 SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体元件及其制造方法
公开(公告)号：US20110068336A1
公开(公告)日：2011-03-24
申请号：US12888835
申请日：2010-09-23
申请人： Shunpei YAMAZAKI , Junichiro SAKATA , Akiharu MIYANAGA , Masayuki SAKAKURA , Junichi KOEZUKA , Tetsunori MARUYAMA , Yuki IMOTO
发明人： Shunpei YAMAZAKI , Junichiro SAKATA , Akiharu MIYANAGA , Masayuki SAKAKURA , Junichi KOEZUKA , Tetsunori MARUYAMA , Yuki IMOTO
IPC分类号： H01L29/26 , H01L21/336
CPC分类号： H01L29/66969 , H01L21/02565 , H01L27/1225 , H01L29/7869
摘要： An object is to provide a thin film transistor and a method for manufacturing the thin film transistor including an oxide semiconductor with a controlled threshold voltage, high operation speed, a relatively easy manufacturing process, and sufficient reliability. An impurity having influence on carrier concentration in the oxide semiconductor layer, such as a hydrogen atom or a compound containing a hydrogen atom such as H2O, may be eliminated. An oxide insulating layer containing a large number of defects such as dangling bonds may be formed in contact with the oxide semiconductor layer, such that the impurity diffuses into the oxide insulating layer and the impurity concentration in the oxide semiconductor layer is reduced. The oxide semiconductor layer or the oxide insulating layer in contact with the oxide semiconductor layer may be formed in a deposition chamber which is evacuated with use of a cryopump whereby the impurity concentration is reduced.
摘要翻译：目的在于提供一种薄膜晶体管及其制造方法，该薄膜晶体管包括具有受控阈值电压，高操作速度，相对容易的制造工艺以及足够的可靠性的氧化物半导体。可以消除影响氧化物半导体层中的载流子浓度的杂质，例如氢原子或含有氢原子如H 2 O的化合物。可以与氧化物半导体层接触形成含有大量缺陷的氧化物绝缘层，例如悬挂键，使得杂质扩散到氧化物绝缘层中，并且氧化物半导体层中的杂质浓度降低。与氧化物半导体层接触的氧化物半导体层或氧化物绝缘层可以在使用低温泵抽真空的沉积室中形成，从而杂质浓度降低。

6. 发明申请

US20100294535A1 LIGHT-TRANSMITTING CONDUCTIVE FILM, DISPLAY DEVICE, ELECTRONIC DEVICE, AND MANUFACTURING METHOD OF LIGHT-TRANSMITTING CONDUCTIVE FILM 有权
标题翻译：透光导电膜，显示装置，电子装置及发光导体膜的制造方法
公开(公告)号：US20100294535A1
公开(公告)日：2010-11-25
申请号：US12781894
申请日：2010-05-18
申请人： Junichi KOEZUKA , Tetsunori MARUYAMA , Takayuki SAITO , Yuki IMOTO , Noriaki UTO , Yuta ENDO , Hitomi SHIONOYA , Takuya HIROHASHI , Shunpei YAMAZAKI
发明人： Junichi KOEZUKA , Tetsunori MARUYAMA , Takayuki SAITO , Yuki IMOTO , Noriaki UTO , Yuta ENDO , Hitomi SHIONOYA , Takuya HIROHASHI , Shunpei YAMAZAKI
IPC分类号： H01B5/00 , C23C14/34
CPC分类号： H01B1/02 , C23C14/0676 , C23C14/3414 , C23C14/541 , C23C14/5806
摘要： An object is to provide a transparent conductive film having favorable transparency and conductivity at low cost. Another object is to reduce the resistivity of a transparent conductive film formed using conductive oxynitride including zinc and aluminum. Another object is to provide a transparent conductive film that is formed using conductive oxynitride including zinc and aluminum. When aluminum and nitrogen are made to be included in a transparent conductive film formed using oxide including zinc to form a transparent conductive film that is formed using conductive oxynitride including zinc and aluminum, the transparent conductive film can have reduced resistivity. Heat treatment after the formation of the transparent conductive film that is formed using conductive oxynitride including zinc and aluminum enables reduction in resistivity of the transparent conductive film.
摘要翻译：本发明的目的是提供一种透明导电膜，其具有良好的透明性和低导电性。另一个目的是降低使用包括锌和铝的导电氮氧化物形成的透明导电膜的电阻率。另一个目的是提供使用包括锌和铝的导电氮氧化物形成的透明导电膜。当使用包含锌的氧化物形成的透明导电膜中包含铝和氮以形成使用包括锌和铝的导电氮氧化物形成的透明导电膜时，透明导电膜可以具有降低的电阻率。在形成使用包括锌和铝的导电氮氧化物形成的透明导电膜之后的热处理使得能够降低透明导电膜的电阻率。

7. 发明申请

US20120258575A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US20120258575A1
公开(公告)日：2012-10-11
申请号：US13437271
申请日：2012-04-02
申请人： Yuhei SATO , Keiji SATO , Toshinari SASAKI , Tetsunori MARUYAMA , Atsuo ISOBE , Tsutomu MURAKAWA , Sachiaki TEZUKA
发明人： Yuhei SATO , Keiji SATO , Toshinari SASAKI , Tetsunori MARUYAMA , Atsuo ISOBE , Tsutomu MURAKAWA , Sachiaki TEZUKA
IPC分类号： H01L21/336
CPC分类号： H01L29/7869 , H01L21/477
摘要： To provide a highly reliable semiconductor device manufactured by giving stable electric characteristics to a semiconductor device including an oxide semiconductor. In a manufacturing process of a transistor, an oxide semiconductor layer, a source electrode layer, a drain electrode layer, a gate insulating film, a gate electrode layer, and an aluminum oxide film are formed in this order, and then heat treatment is performed on the oxide semiconductor layer and the aluminum oxide film, whereby an oxide semiconductor layer from which an impurity containing a hydrogen atom is removed and which includes a region containing oxygen more than the stoichiometric proportion is formed. In addition, when the aluminum oxide film is formed, entry and diffusion of water or hydrogen into the oxide semiconductor layer from the air due to heat treatment in a manufacturing process of a semiconductor device or an electronic appliance including the transistor can be prevented.
摘要翻译：提供通过给包括氧化物半导体的半导体器件赋予稳定的电特性而制造的高可靠性的半导体器件。在晶体管的制造工序中，依次形成氧化物半导体层，源极电极层，漏极电极层，栅极绝缘膜，栅电极层和氧化铝膜，然后进行热处理在氧化物半导体层和氧化铝膜上形成除去含有氢原子的杂质的氧化物半导体层，其中含有超过化学计量比的氧的区域。此外，当形成氧化铝膜时，可以防止在半导体器件或包括晶体管的电子设备的制造过程中由于热处理而从空气中进入和扩散水或氢进入氧化物半导体层。

8. 发明申请

US20100163874A1 DRIVER CIRCUIT AND SEMICONDUCTOR DEVICE 有权
标题翻译：驱动电路和半导体器件
公开(公告)号：US20100163874A1
公开(公告)日：2010-07-01
申请号：US12641446
申请日：2009-12-18
申请人： Jun KOYAMA , Junichiro SAKATA , Tetsunori MARUYAMA , Yuki IMOTO , Yuji ASANO , Junichi KOEZUKA
发明人： Jun KOYAMA , Junichiro SAKATA , Tetsunori MARUYAMA , Yuki IMOTO , Yuji ASANO , Junichi KOEZUKA
IPC分类号： H01L27/06
CPC分类号： H01L27/1255 , H01L27/12 , H01L27/1225 , H01L27/127 , H01L28/20 , H01L29/24 , H01L29/78606 , H01L29/7869
摘要： The silicon nitride layer 910 formed by plasma CVD using a gas containing a hydrogen compound such as silane (SiH4) and ammonia (NH3) is provided on and in direct contact with the oxide semiconductor layer 905 used for the resistor 354, and the silicon nitride layer 910 is provided over the oxide semiconductor layer 906 used for the thin film transistor 355 with the silicon oxide layer 909 serving as a barrier layer interposed therebetween. Therefore, a higher concentration of hydrogen is introduced into the oxide semiconductor layer 905 than into the oxide semiconductor layer 906. As a result, the resistance of the oxide semiconductor layer 905 used for the resistor 354 is made lower than that of the oxide semiconductor layer 906 used for the thin film transistor 355.
摘要翻译：通过使用含有氢化合物如硅烷（SiH 4）和氨（NH 3）的气体的等离子体CVD形成的氮化硅层910设置在与用于电阻器354的氧化物半导体层905上并直接接触，并且氮化硅在用于薄膜晶体管355的氧化物半导体层906上设置层910，氧化硅层909用作阻挡层。因此，与氧化物半导体层906相比，在氧化物半导体层905中引入更高浓度的氢。结果，使用于电阻器354的氧化物半导体层905的电阻比氧化物半导体层的电阻低 906用于薄膜晶体管355。

9. 发明申请

US20100109058A1 CONDUCTIVE OXYNITRIDE AND METHOD FOR MANUFACTURING CONDUCTIVE OXYNITRIDE FILM 有权
标题翻译：导电氧化硅及其制造导电氧化膜的方法
公开(公告)号：US20100109058A1
公开(公告)日：2010-05-06
申请号：US12609032
申请日：2009-10-30
申请人： Junichiro SAKATA , Tetsunori MARUYAMA , Yuki IMOTO , Yuji ASANO , Junichi KOEZUKA
发明人： Junichiro SAKATA , Tetsunori MARUYAMA , Yuki IMOTO , Yuji ASANO , Junichi KOEZUKA
IPC分类号： H01L29/78 , H01B1/06 , B05D5/12 , C23C14/34
CPC分类号： C23C14/5846 , C04B35/58 , C04B2235/3284 , C04B2235/3286 , C23C14/0057 , C23C14/0676 , H01L27/1225 , H01L27/124 , H01L29/7869
摘要： An electrode formed using a transparent conductive oxide is likely to be crystallized by heat treatment performed in the manufacturing process of a semiconductor device. In the case of a thin film element using an electrode having a significantly uneven surface due to crystallization, a short circuit is likely to occur and thus reliability of the element is degraded. An object is to provide a light-transmitting conductive oxynitride which is not crystallized even if subjected to heat treatment and a manufacturing method thereof. It is found that an oxynitride containing indium, gallium, and zinc, to which hydrogen atoms are added as impurities, is a light-transmitting conductive film which is not crystallized even if heated at 350° C. and the object is achieved.
摘要翻译：使用透明导电氧化物形成的电极可能通过在半导体器件的制造过程中进行的热处理而结晶化。在使用由于结晶而具有显着不平坦表面的电极的薄膜元件的情况下，可能发生短路，因此元件的可靠性降低。本发明的目的是提供即使经受热处理也不结晶的透光导电氮氧化物及其制造方法。发现含有氢原子作为杂质的含有铟，镓和锌的氮氧化物是透光性导电膜，即使在350℃下加热也不会结晶，实现了目的。

10. 发明申请

US20130011962A1 SPUTTERING TARGET, METHOD FOR MANUFACTURING SPUTTERING TARGET, AND METHOD FOR FORMING THIN FILM 有权
标题翻译：溅射目标，制造溅射目标的方法和形成薄膜的方法
公开(公告)号：US20130011962A1
公开(公告)日：2013-01-10
申请号：US13603484
申请日：2012-09-05
申请人： Shunpei YAMAZAKI , Tetsunori MARUYAMA , Yuki IMOTO , Hitomi SATO , Masahiro WATANABE , Mitsuo MASHIYAMA , Kenichi OKAZAKI , Motoki NAKASHIMA , Takashi SHIMAZU
发明人： Shunpei YAMAZAKI , Tetsunori MARUYAMA , Yuki IMOTO , Hitomi SATO , Masahiro WATANABE , Mitsuo MASHIYAMA , Kenichi OKAZAKI , Motoki NAKASHIMA , Takashi SHIMAZU
IPC分类号： H01L21/363 , C23C14/08 , C23C14/34
CPC分类号： C23C14/08 , B28B11/243 , C04B35/453 , C04B35/64 , C04B2235/3284 , C04B2235/3286 , C04B2235/76 , C23C14/086 , C23C14/3414 , C23C14/345 , H01L21/02565 , H01L21/02631 , H01L29/24 , H01L29/66969 , H01L29/7869
摘要： There have been cases where transistors formed using oxide semiconductors are inferior in reliability to transistors formed using amorphous silicon. Thus, in the present invention, a semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axis of a crystal is parallel to a normal vector of the top surface of the oxide semiconductor. The target is formed by mixing raw materials so that its composition ratio can obtain a crystal structure.
摘要翻译：已经有使用氧化物半导体形成的晶体管的可靠性与使用非晶硅形成的晶体管的可靠性差。因此，在本发明中，制造了包括使用氧化物半导体形成的高可靠性晶体管的半导体器件。使用包含具有结晶性的氧化物半导体的溅射靶，通过溅射法沉积氧化物半导体膜，并且其中晶体的c轴方向平行于氧化物半导体的顶表面的法向矢量。通过混合原料形成靶，使其组成比可以得到晶体结构。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式