专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08338827B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08338827B2
公开(公告)日：2012-12-25
申请号：US12612021
申请日：2009-11-04
申请人： Shunpei Yamazaki , Junichiro Sakata , Tetsunori Maruyama , Yuki Imoto , Yuji Asano , Junichi Koezuka
发明人： Shunpei Yamazaki , Junichiro Sakata , Tetsunori Maruyama , Yuki Imoto , Yuji Asano , Junichi Koezuka
IPC分类号： H01L29/10
CPC分类号： H01L29/66742 , C04B35/58 , C04B2235/3284 , C04B2235/3286 , H01L27/1225 , H01L29/66969 , H01L29/78618 , H01L29/7869
摘要： In a thin film transistor which uses an oxide semiconductor, buffer layers containing indium, gallium, zinc, oxygen, and nitrogen are provided between the oxide semiconductor layer and the source and drain electrode layers.
摘要翻译：在使用氧化物半导体的薄膜晶体管中，在氧化物半导体层和源极和漏极电极层之间设置包含铟，镓，锌，氧和氮的缓冲层。

2. 发明授权

US08338226B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08338226B2
公开(公告)日：2012-12-25
申请号：US12748520
申请日：2010-03-29
申请人： Yuji Asano , Junichi Koezuka
发明人： Yuji Asano , Junichi Koezuka
IPC分类号： H01L21/20
CPC分类号： H01L29/7869 , C04B35/58 , C04B2235/3284 , C04B2235/3286 , H01L27/1225 , H01L29/66969 , H01L29/78618
摘要： An object is to provide a thin film transistor including an oxide semiconductor layer, in which the contact resistance between the oxide semiconductor layer and source and drain electrode layers is reduced and whose electric characteristics are stabilized. Another object is to provide a method for manufacturing the thin film transistor. The thin film transistor including an oxide semiconductor layer is formed in such a manner that buffer layers whose conductivity is higher than that of the oxide semiconductor layer are formed and the oxide semiconductor layer and the source and drain electrode layers are electrically connected to each other through the buffer layers. In addition, the buffer layers whose conductivity is higher than that of the oxide semiconductor layer are subjected to reverse sputtering treatment and heat treatment in a nitrogen atmosphere.
摘要翻译：目的是提供一种薄膜晶体管，其包括氧化物半导体层，其中氧化物半导体层与源极和漏极电极层之间的接触电阻降低并且其电特性稳定。另一个目的是提供制造薄膜晶体管的方法。包括氧化物半导体层的薄膜晶体管形成为形成电导率高于氧化物半导体层的缓冲层的方式，并且氧化物半导体层和源极和漏极电极层通过缓冲层。此外，在氮气气氛中对导电率高于氧化物半导体层的缓冲层进行反溅射处理和热处理。

3. 发明申请

US20070048890A1 Semiconductor device fabrication method and semiconductor device 失效
标题翻译：半导体器件制造方法和半导体器件
公开(公告)号：US20070048890A1
公开(公告)日：2007-03-01
申请号：US11327483
申请日：2006-01-09
申请人： Yuji Asano , Morio Kato
发明人： Yuji Asano , Morio Kato
IPC分类号： H01L21/00
CPC分类号： H01L31/0216
摘要： A semiconductor device fabrication method in which when a semiconductor device with a built-in light receiving element is fabricated, a section for dividing the light receiving element is protected from damage caused by, for example, etching. An antireflection coating is formed not only on a light receiving area in a divided photodiode area but on a division area including a junction area between a division section outside the light receiving area for dividing a photodiode and a cathode. A polycrystalline silicon film is formed so as to cover the antireflection coating. Accordingly, the antireflection coating on the junction area between the division section outside the light receiving area and the cathode is protected against, for example, etching by the polycrystalline silicon film. As a result, the appearance of a crystal defect, a change in impurity concentration, or the like is suppressed in this area. Therefore, a high-performance high-quality semiconductor device with a built-in photodiode can be fabricated.
摘要翻译：一种半导体器件制造方法，其中当制造具有内置光接收元件的半导体器件时，用于分割光接收元件的部分被保护免受例如蚀刻引起的损坏。防反射涂层不仅形成在分光电二极管区域的光接收区域上，而且形成在包含用于分割光电二极管的光接收区域外的分割部分与阴极之间的接合区域的分割区域上。形成多晶硅膜以覆盖抗反射涂层。因此，防止在光接收区域外的分割部分与阴极之间的接合区域上的抗反射涂层被防止例如多晶硅膜的蚀刻。结果，在该区域中抑制了晶体缺陷的出现，杂质浓度的变化等。因此，可以制造具有内置光电二极管的高性能高品质半导体器件。

4. 发明授权

US5532840A Facsimile machine 失效
标题翻译：传真机
公开(公告)号：US5532840A
公开(公告)日：1996-07-02
申请号：US171420
申请日：1993-12-22
申请人： Yuji Asano , Wataru Tomida
发明人： Yuji Asano , Wataru Tomida
IPC分类号： G11C29/00 , H04N1/32 , H04N1/327 , H04N1/21
CPC分类号： G11C29/88 , H04N1/32363 , H04N1/32379 , H04N1/32704 , H04N1/32708 , H04N1/3271 , H04N1/32719 , H04N1/32723 , H04N1/32728 , H04N1/32732
摘要： In this facsimile machine, it is determined whether data to be stored in a RAM is image data, and, if the data is image data, a normal cluster for writing the image data into is ensured. If the data is not image data, a defective cluster is selected, and the data is written into the defective cluster. In this case, if no defective cluster is selected, a normal cluster is selected, and the data is written into the normal cluster. Upon termination of the data writing operation, the data is managed on a classification (kind) basis. Accordingly, a facsimile machine is provided that is low in price and can easily carry out individual management for preservation of data while maintaining preservation (storage) quality of data even when a semiconductor memory that is not guaranteed in quality is used as the storage medium for the data.
摘要翻译：在该传真机中，确定要存储在RAM中的数据是否是图像数据，并且如果数据是图像数据，则确保了用于写入图像数据的正常集群。如果数据不是图像数据，则选择有缺陷的簇，并将数据写入缺陷簇。在这种情况下，如果没有选择有缺陷的集群，则选择正常集群，并将数据写入正常集群。在数据写入操作终止时，以分类（种类）为基础来管理数据。因此，提供廉价的传真机，并且即使当质量不保证的半导体存储器被用作存储介质时，也可以容易地进行用于数据保存的个体管理，同时保持数据的保存（存储）质量数据。

5. 发明授权

US4982225A Image forming apparatus for controlling the humidity and operating parameters associated with an image forming process 失效
标题翻译：用于控制与图像形成处理相关联的湿度和操作参数的图像形成装置
公开(公告)号：US4982225A
公开(公告)日：1991-01-01
申请号：US471800
申请日：1990-01-29
申请人： Kenji Sakakibara , Yuji Asano
发明人： Kenji Sakakibara , Yuji Asano
IPC分类号： G03D13/00 , G03B27/32 , G03F7/00 , G03G21/20
CPC分类号： G03F7/0022 , G03B27/32 , G03G21/203 , G03B2227/325
摘要： An image forming apparatus including an image forming device for forming an image on a photosensitive recording medium is disclosed. The image forming device forms the image in accordance with at least one operating parameter. A humidity detecting sensor detects an ambient humidity in the apparatus. A heater changes a relative humidity in the apparatus. A controller controls the heater in accordance with the sensed humidity and optimizes the at least one operating parameter at a temperature changed by the heater.
摘要翻译：公开了一种图像形成装置，包括用于在感光记录介质上形成图像的图像形成装置。图像形成装置根据至少一个操作参数形成图像。湿度检测传感器检测装置中的环境湿度。加热器改变设备中的相对湿度。控制器根据感测到的湿度来控制加热器，并且在由加热器改变的温度下优化至少一个操作参数。

6. 发明授权

US4905036A Image forming process and system, including heating step or device for increased density of images 失效
标题翻译：图像形成过程和系统，包括加热步骤或增加图像密度的设备
公开(公告)号：US4905036A
公开(公告)日：1990-02-27
申请号：US112217
申请日：1987-10-26
申请人： Yuji Asano , Jun Sakai , Yumio Matsumoto , Osamu Takagi , Akira Sago , Kiyoharu Hayakawa , Masashi Ueda , Yukichi Sawaki , Keiko Suzuki
发明人： Yuji Asano , Jun Sakai , Yumio Matsumoto , Osamu Takagi , Akira Sago , Kiyoharu Hayakawa , Masashi Ueda , Yukichi Sawaki , Keiko Suzuki
IPC分类号： G03B27/32 , G03F7/00 , G03B27/52
CPC分类号： G03F7/002 , G03B27/32 , G03B2227/325
摘要： A process and system for forming images on a recording sheet, according to source image information as provided on an original, wherein a pressure-sensitive photosensitive sheet is image-wise exposed to a radiation, to form thereon latent images corresponding to the source image information, and a pressure is applied to the image-wise exposed photosensitive sheet, to cause a chemical reaction and thereby develop the latent images into visible images on the recording sheet. The thus pressurized recording sheet is heated so that the chemical reaction is promoted to thereby increase a density of the visible images.
摘要翻译：根据原稿上提供的源图像信息，在记录片材上形成图像的方法和系统，其中压敏感光片被成像地暴露于辐射，以在其上形成与源图像信息对应的潜像并且对图像曝光的感光片施加压力，引起化学反应，从而将潜像显影成记录片材上的可见图像。加热这样加压的记录纸，从而促进化学反应，从而增加可见图像的浓度。

7. 发明授权

US4806984A Color-tone controlling method and apparatus therefor 失效
标题翻译：色调控制方法及其装置
公开(公告)号：US4806984A
公开(公告)日：1989-02-21
申请号：US154235
申请日：1988-02-10
申请人： Yuji Asano
发明人： Yuji Asano
IPC分类号： G03B27/73 , G03C7/00 , G03F7/00 , G03B27/32 , G03B27/52
CPC分类号： G03F7/002 , G03C7/00 , G03B2227/325
摘要： Disclosed is a color-tone controlling method and apparatus therefor, in which a desirably selected one of a plurality of color-tone plates of various colors such as red, green, blue, and so on is put onto a back surface of a color photosensitive medium, so that when a front surface of the color photosensitive medium is exposed to image carrying light, a part of light transmitted through the color photosensitive medium of the same color as that of the color-tone plate is reflected on the color-tone plate so as to re-expose the back surface of the color photosensitive medium.
摘要翻译：公开了一种色调控制方法及其设备，其中将各种颜色的多个色调板（例如红色，绿色，蓝色等）中期望选择的一个色调板放置在彩色感光体的背面上介质，使得当彩色光敏介质的前表面暴露于承载光的图像时，透过与色调板相同颜色的彩色感光介质透射的光的一部分在色调板上反射以便重新曝光彩色光敏介质的背面。

8. 发明申请

US20100301329A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100301329A1
公开(公告)日：2010-12-02
申请号：US12787813
申请日：2010-05-26
申请人： Yuji ASANO , Junichi KOEZUKA
发明人： Yuji ASANO , Junichi KOEZUKA
IPC分类号： H01L29/786 , H01L21/36
CPC分类号： H01L29/66969 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L21/02667 , H01L21/465 , H01L21/47635 , H01L21/477 , H01L27/1214 , H01L27/1225 , H01L27/1288 , H01L29/42384 , H01L29/78618 , H01L29/7869 , H01L29/78696
摘要： An object is to provide a thin film transistor using an oxide semiconductor layer, in which contact resistance between the oxide semiconductor layer and source and drain electrode layers is reduced and electric characteristics are stabilized. Another object is to provide a method for manufacturing the thin film transistor. A thin film transistor using an oxide semiconductor layer is formed in such a manner that buffer layers having higher conductivity than the oxide semiconductor layer are formed over the oxide semiconductor layer, source and drain electrode layers are formed over the buffer layers, and the oxide semiconductor layer is electrically connected to the source and drain electrode layers with the buffer layers interposed therebetween. In addition, the buffer layers are subjected to reverse sputtering treatment and heat treatment in a nitrogen atmosphere, whereby the buffer layers having higher conductivity than the oxide semiconductor layer are obtained.
摘要翻译：目的是提供一种使用氧化物半导体层的薄膜晶体管，其中氧化物半导体层和源极和漏极电极层之间的接触电阻减小并且电特性稳定。另一个目的是提供制造薄膜晶体管的方法。使用氧化物半导体层的薄膜晶体管形成为在氧化物半导体层上形成具有比氧化物半导体层更高的导电性的缓冲层，在缓冲层上形成源极和漏极层，并且氧化物半导体层与源极和漏极电极层电连接，缓冲层插入其间。此外，缓冲层在氮气气氛中进行反溅射处理和热处理，由此获得具有比氧化物半导体层更高的导电性的缓冲层。

9. 发明申请

US20100252832A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100252832A1
公开(公告)日：2010-10-07
申请号：US12748521
申请日：2010-03-29
申请人： Yuji ASANO , Junichi KOEZUKA
发明人： Yuji ASANO , Junichi KOEZUKA
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/66969 , H01L21/02565 , H01L21/02631 , H01L21/477 , H01L27/1214 , H01L27/1225 , H01L27/1288 , H01L29/42384 , H01L29/7869 , H01L29/78696
摘要： An object is to provide a thin film transistor using an oxide semiconductor layer, in which contact resistance between the oxide semiconductor layer and source and drain electrode layers is reduced and electric characteristics are stabilized. The thin film transistor is formed in such a manner that a buffer layer including a high-resistance region and low-resistance regions is formed over an oxide semiconductor layer, and the oxide semiconductor layer and source and drain electrode layers are in contact with each other with the low-resistance region of the buffer layer interposed therebetween.
摘要翻译：目的是提供一种使用氧化物半导体层的薄膜晶体管，其中氧化物半导体层和源极和漏极电极层之间的接触电阻减小并且电特性稳定。薄膜晶体管形成为在氧化物半导体层上形成包括高电阻区域和低电阻区域的缓冲层，并且氧化物半导体层和源极和漏极电极层彼此接触其中缓冲层的低电阻区域插入其间。

10. 发明授权

US06531102B1 Fuel reforming apparatus 失效
标题翻译：燃料重整装置
公开(公告)号：US06531102B1
公开(公告)日：2003-03-11
申请号：US09559098
申请日：2000-04-27
申请人： Masahito Nakamura , Naoyuki Abe , Kiyoshi Kasahara , Shuichi Togasawa , Yuji Asano
发明人： Masahito Nakamura , Naoyuki Abe , Kiyoshi Kasahara , Shuichi Togasawa , Yuji Asano
IPC分类号： B01J1000
CPC分类号： F28D21/001 , B01B1/005 , B01J2219/00006 , C01B3/323 , C01B2203/00 , C01B2203/0233 , C01B2203/044 , C01B2203/047 , C01B2203/066 , C01B2203/0811 , C01B2203/0822 , C01B2203/0827 , C01B2203/0883 , C01B2203/1023 , C01B2203/1064 , C01B2203/1076 , C01B2203/1223 , C01B2203/1288 , C01B2203/1604 , F28D7/0075 , F28D7/0083 , F28D7/06 , F28D7/08 , F28D7/085 , F28D7/16 , F28D2021/0043 , F28D2021/0064 , H01M8/0612 , H01M8/0662 , Y02P20/128
摘要： A fuel reforming apparatus is provided for generating a hydrogen-rich gas. The fuel reforming apparatus includes an evaporator comprising an evaporation chamber for evaporating the fuel vapor by evaporating a hydrocarbon fuel-water mixture by an evaporator using a combustion gas formed in a combustor; a heating chamber for heating the fuel vapor by a combustion gas output from the evaporation chamber; and a guiding path for guiding the combustion gas output from the evaporation chamber to the heating chamber along the floor of the evaporating room. In the heating chamber, the fuel vapor generated in the evaporation chamber is uniformly heated in an atmosphere with a homogeneous temperature of the combustion gas output from a heating medium tube, while the fuel vapor is circulating in the vapor tube.
摘要翻译：提供一种用于产生富氢气体的燃料重整装置。燃料重整装置包括蒸发器，其包括蒸发室，用于通过使用形成在燃烧器中的燃烧气体通过蒸发器蒸发烃燃料 - 水混合物来蒸发燃料蒸气; 加热室，用于通过从蒸发室输出的燃烧气体来加热燃料蒸气; 以及用于将从蒸发室输出的燃烧气体沿着蒸发室的地板引导到加热室的引导路径。在加热室中，在燃料蒸气在蒸气管中循环的同时，在蒸发室内产生的燃料蒸气在从加热介质管输出的燃烧气体的均匀温度的气氛中均匀地加热。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式