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1. 发明授权

US09048191B2 Plasma etching method 有权
标题翻译：等离子蚀刻法
公开(公告)号：US09048191B2
公开(公告)日：2015-06-02
申请号：US14125363
申请日：2012-06-12
申请人： Shuichiro Uda , Takaaki Nezu , Shinji Fuchigami , Koji Maruyama
发明人： Shuichiro Uda , Takaaki Nezu , Shinji Fuchigami , Koji Maruyama
IPC分类号： H01L21/3065 , H01L21/67 , H01L21/3213 , H01J37/32 , H01L21/768 , H01L21/308
CPC分类号： H01L21/3065 , H01J37/32165 , H01J37/32449 , H01J37/3266 , H01J37/32669 , H01J2237/334 , H01L21/30655 , H01L21/308 , H01L21/3081 , H01L21/32132 , H01L21/32137 , H01L21/67069 , H01L21/76898
摘要： A plasma etching method includes supplying an etching gas containing an oxygen gas and a sulfur fluoride gas at a predetermined flow rate into a processing chamber that accommodates a processing substrate including a silicon layer and a resist layer, and etching the silicon layer with plasma generated from the etching gas using the resist layer as a mask. The plasma etching method further includes a first step of etching the silicon layer while a flow ratio of the oxygen gas to the sulfur fluoride gas is adjusted to a first flow ratio; a second step of etching the silicon layer while decreasing a flow rate of the oxygen gas to decrease the flow ratio to a second flow ratio, which is lower than the first flow ratio; and a third step of etching the silicon layer while the flow ratio is adjusted to the second flow ratio.
摘要翻译：等离子体蚀刻方法包括将含有氧气和硫氟化物气体的蚀刻气体以预定的流量供给到容纳包括硅层和抗蚀剂层的处理基板的处理室中，并且利用从使用抗蚀剂层作为掩模的蚀刻气体。等离子体蚀刻方法还包括：在将氧气与氟化硫气体的流量比调整为第一流量比的同时蚀刻硅层的第一步骤; 第二步骤，在降低所述氧气的流量的同时，将所述流量比降低到低于所述第一流量比的第二流量比，来蚀刻所述硅层; 以及在流量比被调节到第二流量比时蚀刻硅层的第三步骤。

2. 发明申请

US20140113450A1 PLASMA ETCHING METHOD 有权
标题翻译：等离子体蚀刻法
公开(公告)号：US20140113450A1
公开(公告)日：2014-04-24
申请号：US14125363
申请日：2012-06-12
申请人： Shuichiro Uda , Takaaki Nezu , Shinji Fuchigami , Koji Maruyama
发明人： Shuichiro Uda , Takaaki Nezu , Shinji Fuchigami , Koji Maruyama
IPC分类号： H01L21/3065 , H01L21/308
CPC分类号： H01L21/3065 , H01J37/32165 , H01J37/32449 , H01J37/3266 , H01J37/32669 , H01J2237/334 , H01L21/30655 , H01L21/308 , H01L21/3081 , H01L21/32132 , H01L21/32137 , H01L21/67069 , H01L21/76898
摘要： A plasma etching method includes supplying an etching gas containing an oxygen gas and a sulfur fluoride gas at a predetermined flow rate into a processing chamber that accommodates a processing substrate including a silicon layer and a resist layer, and etching the silicon layer with plasma generated from the etching gas using the resist layer as a mask. The plasma etching method further includes a first step of etching the silicon layer while a flow ratio of the oxygen gas to the sulfur fluoride gas is adjusted to a first flow ratio; a second step of etching the silicon layer while decreasing a flow rate of the oxygen gas to decrease the flow ratio to a second flow ratio, which is lower than the first flow ratio; and a third step of etching the silicon layer while the flow ratio is adjusted to the second flow ratio.
摘要翻译：等离子体蚀刻方法包括将含有氧气和硫氟化物气体的蚀刻气体以预定的流量供给到容纳包括硅层和抗蚀剂层的处理基板的处理室中，并且利用从使用抗蚀剂层作为掩模的蚀刻气体。等离子体蚀刻方法还包括：在将氧气与氟化硫气体的流量比调整为第一流量比的同时蚀刻硅层的第一步骤; 第二步骤，在降低所述氧气的流量的同时，将所述流量比降低到低于所述第一流量比的第二流量比，来蚀刻所述硅层; 以及在流量比被调节到第二流量比时蚀刻硅层的第三步骤。

3. 发明授权

US08716144B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08716144B2
公开(公告)日：2014-05-06
申请号：US13512372
申请日：2010-11-17
申请人： Shuichiro Uda , Koji Maruyama , Yusuke Hirayama
发明人： Shuichiro Uda , Koji Maruyama , Yusuke Hirayama
IPC分类号： H01L21/302
CPC分类号： H01L21/3065
摘要： A method for manufacturing a semiconductor device for forming a deep hole in a substrate by using a photoresist film formed on the substrate includes a positioning step of positioning a substrate inside an etching chamber, the substrate having a photoresist film including an opening part formed thereon, a first etching step of performing plasma etching on the substrate positioned inside the etching chamber by using a first mixed gas including at least SiF4 and O2 with the photoresist film as a mask, and a second etching step of forming a hole in the substrate by performing plasma etching on the substrate by using a second mixed gas including at least SF6, O2, and HBr after the first etching step.
摘要翻译：通过使用形成在基板上的光致抗蚀剂膜来制造用于在基板中形成深孔的半导体器件的方法包括：将蚀刻室内的基板定位的定位步骤，所述基板具有包括形成在其上的开口部的光致抗蚀剂膜，第一蚀刻步骤，通过使用至少包含SiF 4和O 2的第一混合气体与光致抗蚀剂膜作为掩模，在位于蚀刻室内的基板上进行等离子体蚀刻;以及第二蚀刻步骤，通过执行在基板中形成孔在第一蚀刻步骤之后通过使用至少包括SF 6，O 2和HBr的第二混合气体在衬底上进行等离子体蚀刻。

4. 发明申请

US20120238098A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20120238098A1
公开(公告)日：2012-09-20
申请号：US13512372
申请日：2010-11-17
申请人： Shuichiro Uda , Koji Maruyama , Yusuke Hirayama
发明人： Shuichiro Uda , Koji Maruyama , Yusuke Hirayama
IPC分类号： H01L21/308
CPC分类号： H01L21/3065
摘要： A method for manufacturing a semiconductor device for forming a deep hole in a substrate by using a photoresist film formed on the substrate includes a positioning step of positioning a substrate inside an etching chamber, the substrate having a photoresist film including an opening part formed thereon, a first etching step of performing plasma etching on the substrate positioned inside the etching chamber by using a first mixed gas including at least SiF4 and O2 with the photoresist film as a mask, and a second etching step of forming a hole in the substrate by performing plasma etching on the substrate by using a second mixed gas including at least SF6, O2, and HBr after the first etching step.
摘要翻译：通过使用形成在基板上的光致抗蚀剂膜来制造用于在基板中形成深孔的半导体器件的方法包括：将蚀刻室内的基板定位的定位步骤，所述基板具有包括形成在其上的开口部的光致抗蚀剂膜，第一蚀刻步骤，通过使用至少包含SiF 4和O 2的第一混合气体与光致抗蚀剂膜作为掩模，在位于蚀刻室内的基板上进行等离子体蚀刻;以及第二蚀刻步骤，通过执行在基板中形成孔在第一蚀刻步骤之后通过使用至少包括SF 6，O 2和HBr的第二混合气体在衬底上进行等离子体蚀刻。

5. 发明申请

US20090221148A1 PLASMA ETCHING METHOD, PLASMA ETCHING APPARATUS AND COMPUTER-READABLE STORAGE MEDIUM 审中-公开
标题翻译：等离子体蚀刻方法，等离子体蚀刻装置和计算机可读存储介质
公开(公告)号：US20090221148A1
公开(公告)日：2009-09-03
申请号：US12393466
申请日：2009-02-26
申请人： Shuichiro Uda , Yusuke Hirayama
发明人： Shuichiro Uda , Yusuke Hirayama
IPC分类号： H01L21/311 , H01L21/3065
CPC分类号： H01L21/3065 , H01L21/3086
摘要： A plasma etching method includes etching a single crystalline silicon layer of a substrate to be processed through a patterned upper layer formed on the single crystalline silicon layer by using a plasma of a processing gas, wherein forming a protection film at a sidewall portion of the upper layer by using a plasma of a carbon-containing gas is carried out before said etching the single crystalline silicon layer.
摘要翻译：等离子体蚀刻方法包括通过使用处理气体的等离子体通过形成在单晶硅层上的图案化上层来蚀刻待处理衬底的单晶硅层，其中在上层的侧壁部分形成保护膜在所述蚀刻单晶硅层之前进行使用含碳气体的等离子体的层。

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