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1. 发明申请

US20070182279A1 Surface acoustic wave device and electronic apparatus 审中-公开
标题翻译：表面声波装置和电子设备
公开(公告)号：US20070182279A1
公开(公告)日：2007-08-09
申请号：US11700570
申请日：2007-01-31
申请人： Shuichi Kawano , Satoshi Fujii
发明人： Shuichi Kawano , Satoshi Fujii
IPC分类号： H03H9/25
CPC分类号： H03H9/02574 , G06F3/0433 , H03H9/02897 , H03H9/02944
摘要： A surface acoustic wave device includes: (a) a substrate; (b) a piezoelectric film formed on top of the substrate; (c) an electrode for generating a surface acoustic wave formed on top of the piezoelectric film; (d) a first covering film formed on the electrode to cover the electrode, and made of the same material as that of the piezoelectric film; and (e) a second covering film formed on the first covering film.
摘要翻译：表面声波装置包括：（a）基板; （b）形成在基板顶部的压电膜; （c）用于产生形成在所述压电膜顶部上的表面声波的电极; （d）形成在电极上以覆盖电极并由与压电膜相同的材料制成的第一覆盖膜; 和（e）形成在第一覆盖膜上的第二覆盖膜。

2. 发明授权

US08004148B2 Surface acoustic wave element 有权
标题翻译：表面声波元件
公开(公告)号：US08004148B2
公开(公告)日：2011-08-23
申请号：US12535945
申请日：2009-08-05
申请人： Takatoshi Umeda , Shuichi Kawano , Satoshi Fujii
发明人： Takatoshi Umeda , Shuichi Kawano , Satoshi Fujii
IPC分类号： H03H9/25
CPC分类号： H03H9/02574 , H03H9/14538
摘要： A surface acoustic wave element includes: a diamond layer; an alumina nitride layer provided on the diamond layer; a silicon oxide layer provided on the alumina nitride layer; and a pair of electrodes provided between the alumina nitride layer and the silicon oxide layer, the electrodes applying a voltage to the alumina nitride layer. If a thickness of the alumina nitride layer is represented by H1, a thickness of the silicon oxide layer is represented by H2, a wavelength of a surface acoustic wave is represented by λ, x is defined as x=2πH1/λ, and y is defined as y=2πH2/λ, (x, y) meets all of the following formulas 1 to 4 below. That is, the formula 1 is y≦0.750×x+0.325; the formula 2 is y≦−0.300×x+1.690; the formula 3 is y≧−0.500×x+0.950; and the formula 4 is y≧0.700×x−0.610.
摘要翻译：表面声波元件包括：金刚石层; 设置在金刚石层上的氧化铝氮化物层; 设置在氧化铝层上的氧化硅层; 以及设置在氧化铝氮化物层和氧化硅层之间的一对电极，电极向氧化铝氮化物层施加电压。如果氮化铝层的厚度由H1表示，则氧化硅层的厚度由H2表示，表面声波的波长由λ表示，x被定义为x = 2＆pgr; H1 /λ，以及 y定义为y = 2＆pgr; H2 /λ，（x，y）满足以下所有下列式1至4。也就是说，公式1是y＆nlE; 0.750×x + 0.325; 公式2为y＆nlE; -0.300×x + 1.690; 公式3为y≥-0.500×x + 0.950; 式4为y≥0.700×x-0.610。

3. 发明授权

US09086428B2 Functional device, method of manufacturing the functional device, physical quantity sensor, and electronic apparatus 有权
标题翻译：功能装置，功能装置的制造方法，物理量传感器以及电子装置
公开(公告)号：US09086428B2
公开(公告)日：2015-07-21
申请号：US13277511
申请日：2011-10-20
申请人： Mitsuhiro Yoda , Shuichi Kawano , Shigekazu Takagi , Seiji Yamazaki
发明人： Mitsuhiro Yoda , Shuichi Kawano , Shigekazu Takagi , Seiji Yamazaki
IPC分类号： G01P15/125 , G01C19/56 , H01S4/00 , H01L29/84 , H01L21/08 , G01P15/08
CPC分类号： G01P15/125 , G01P3/44 , G01P15/0802 , G01P2015/0814 , Y10T29/49002
摘要： A functional device according to an embodiment of the invention includes: an insulating substrate; a movable section; movable electrode fingers provided in the movable section; and fixed electrode fingers provided on the insulating substrate and arranged to be opposed to the movable electrode fingers. The fixed electrode fingers include: first fixed electrode fingers arranged on one side of the movable electrode fingers; and second fixed electrode fingers arranged on the other side of the movable electrode fingers. The first fixed electrode fingers and the second fixed electrode fingers are arranged to be spaced apart from each other.
摘要翻译：根据本发明的实施例的功能装置包括：绝缘基板; 可移动部分; 设置在可动部中的可动电极指; 以及设置在所述绝缘基板上且与所述可动电极指相对配置的固定电极指。固定电极指包括：布置在可动电极指的一侧上的第一固定电极指; 以及布置在可动电极指的另一侧上的第二固定电极指。第一固定电极指和第二固定电极指被布置成彼此间隔开。

4. 发明授权

US08455766B2 Substrate with low-elasticity layer and low-thermal-expansion layer 有权
标题翻译：基材具有低弹性层和低热膨胀层
公开(公告)号：US08455766B2
公开(公告)日：2013-06-04
申请号：US12106723
申请日：2008-04-21
申请人： Hironori Tanaka , Shuichi Kawano
发明人： Hironori Tanaka , Shuichi Kawano
IPC分类号： H05K1/03
CPC分类号： H01L23/49894 , H01L23/147 , H01L23/49822 , H01L2224/05568 , H01L2224/05573 , H01L2224/16 , H01L2924/00014 , H01L2924/01004 , H01L2924/01078 , H01L2924/15311 , H05K1/0271 , H05K3/0029 , H05K3/4602 , H05K3/4688 , H05K2201/0133 , H05K2201/0195 , H05K2201/068 , H05K2201/09536 , H05K2201/096 , H05K2203/063 , Y10T29/49165 , H01L2224/05599
摘要： A substrate for mounting an IC chip including a printed substrate including a first build-up layer. The first build-up layer including (i) a first conductor layer having first conductor circuits and (ii) a resin insulating layer. The first conductor circuits and the resin insulating layer alternating along a length of the first build-up layer. A low-elasticity resin layer formed on the first build-up layer. A low-thermal-expansion substrate formed of ceramics or silicon, and provided on the low-elasticity resin layer. Through-hole conductors provided through the low-thermal-expansion substrate and the low-elasticity resin layer; and second conductor circuits formed on the low-thermal-expansion substrate. The through-hole conductors electrically connect the first conductor layer and the second conductor circuits provided on the low-thermal-expansion substrate.
摘要翻译：一种用于安装IC芯片的基板，其包括具有第一累积层的印刷基板。第一累积层包括（i）具有第一导体电路的第一导体层和（ii）树脂绝缘层。第一导体电路和树脂绝缘层沿着第一堆积层的长度交替。形成在第一堆积层上的低弹性树脂层。由陶瓷或硅制成的低热膨胀性基板，设置在低弹性树脂层上。通过低热膨胀基板和低弹性树脂层提供的通孔导体; 和形成在低热膨胀基板上的第二导体电路。通孔导体将第一导体层和设置在低热膨胀基板上的第二导体电路电连接。

5. 发明授权

US08247289B2 Capacitor and manufacturing method thereof 有权
标题翻译：电容器及其制造方法
公开(公告)号：US08247289B2
公开(公告)日：2012-08-21
申请号：US11508141
申请日：2006-08-23
申请人： Yoshiki Yamanishi , Muneo Harada , Takahiro Kitano , Tatsuzo Kawaguchi , Yoshihiro Hirota , Kinji Yamada , Tomotaka Shinoda , Katsuya Okumura , Shuichi Kawano
发明人： Yoshiki Yamanishi , Muneo Harada , Takahiro Kitano , Tatsuzo Kawaguchi , Yoshihiro Hirota , Kinji Yamada , Tomotaka Shinoda , Katsuya Okumura , Shuichi Kawano
IPC分类号： H01L21/8242 , H01L21/20 , H01L21/00
CPC分类号： H01L23/50 , H01G4/228 , H01G4/33 , H01L23/481 , H01L24/81 , H01L2224/81801 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01056 , H01L2924/01072 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2924/19041 , H01L2924/30105 , H05K1/162 , H05K3/002 , H05K2201/09509 , H05K2201/096 , H05K2201/10378
摘要： A capacitor having a high quality and a manufacturing method of the same are provided.A capacitor has a lower electrode formed on an oxide film, a dielectric layer formed on the lower electrode, an upper electrode formed so as to face the lower electrode with the dielectric layer between, and an upper electrode formed so as to cover the upper electrode, an opening portion of the upper electrode and an opening portion of the dielectric layer. By forming the upper electrode on the dielectric layer, it is possible to pattern the dielectric layer by using the upper electrode as a mask, and provide a capacitor having a high-quality dielectric layer by preventing impurity diffusion into the dielectric layer. By forming the upper electrode on the dielectric layer, it is possible to prevent the dielectric layer from being exposed to etching liquid, liquid developer, etc.
摘要翻译：提供了具有高质量的电容器及其制造方法。电容器具有形成在氧化膜上的下电极，形成在下电极上的电介质层，形成为与电极之间介电层相对的下电极的上电极和形成为覆盖上电极的上电极，上电极的开口部分和电介质层的开口部分。通过在电介质层上形成上电极，可以通过使用上电极作为掩模对电介质层进行图案化，并且通过防止杂质扩散到电介质层中来提供具有高质量电介质层的电容器。通过在电介质层上形成上部电极，可以防止电介质层暴露于蚀刻液体，液体显影剂等

6. 发明授权

US08178790B2 Interposer and method for manufacturing interposer 有权
标题翻译：插件和插入式制造方法
公开(公告)号：US08178790B2
公开(公告)日：2012-05-15
申请号：US12336697
申请日：2008-12-17
申请人： Toshiki Furutani , Atsushi Sakai , Kiyohisa Hasegawa , Hiroshi Segawa , Shuichi Kawano , Hajime Sakamoto
发明人： Toshiki Furutani , Atsushi Sakai , Kiyohisa Hasegawa , Hiroshi Segawa , Shuichi Kawano , Hajime Sakamoto
IPC分类号： H05K1/11
CPC分类号： H01L23/49822 , H01L23/49816 , H01L23/49827 , H01L2224/16 , H01L2224/16235 , H01L2924/01004 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/15192 , H01L2924/19107
摘要： An interposer and a method of manufacturing the same are provided. The interposer includes a substrate and a conductor portion formed inside the substrate. At least one insulating layer is formed on the substrate and on the conductor portion. A signal wiring portion is formed inside the insulating layer or on the insulating layer. A first pad is configured to receive an electronic part, and is formed on an outermost insulating layer of the at least one insulating layer. A connection conductor is formed in the at least one insulating layer so as to electrically connect the conductor portion to the first pad.
摘要翻译：提供了插入件及其制造方法。内插件包括基板和形成在基板内部的导体部分。在基板上和导体部分上形成至少一个绝缘层。在绝缘层内或绝缘层上形成信号布线部分。第一焊盘被配置为接收电子部件，并且形成在所述至少一个绝缘层的最外绝缘层上。连接导体形成在所述至少一个绝缘层中，以便将导体部分电连接到第一焊盘。

7. 发明授权

US08674790B2 Surface acoustic wave device, oscillator, module apparatus 有权
标题翻译：表面声波装置，振荡器，模块装置
公开(公告)号：US08674790B2
公开(公告)日：2014-03-18
申请号：US12977503
申请日：2010-12-23
申请人： Shuichi Kawano , Masashi Fujioka
发明人： Shuichi Kawano , Masashi Fujioka
IPC分类号： H03H9/25 , H03H9/64
CPC分类号： H03H9/02574
摘要： A surface acoustic wave device includes: a sapphire substrate having a C-plane main surface; comb-like electrodes which excite surface acoustic waves formed on the main surface of the sapphire substrate; an aluminum nitride film which covers the comb-like electrodes and the main surface; and a silicon dioxide film which is formed on the surface of the aluminum nitride film.
摘要翻译：表面声波装置包括：具有C面主表面的蓝宝石衬底; 梳状电极，其激发形成在蓝宝石衬底的主表面上的表面声波; 覆盖梳状电极和主表面的氮化铝膜; 以及形成在氮化铝膜的表面上的二氧化硅膜。

8. 发明授权

US08624690B2 Surface acoustic wave device, oscillator, module apparatus 有权
标题翻译：表面声波装置，振荡器，模块装置
公开(公告)号：US08624690B2
公开(公告)日：2014-01-07
申请号：US12977525
申请日：2010-12-23
申请人： Shuichi Kawano , Masashi Fujioka
发明人： Shuichi Kawano , Masashi Fujioka
IPC分类号： H03H9/64 , H03H9/25 , H03B5/32
CPC分类号： H03H9/02574
摘要： A surface acoustic wave device includes: a sapphire substrate having a C-plane main surface; an aluminum nitride film which is formed on the main surface of the sapphire substrate; comb-like electrodes which are formed on the surface of the aluminum nitride film to excite surface acoustic waves; and a silicon dioxide film which covers the comb-like electrodes and the surface of the aluminum nitride film.
摘要翻译：表面声波装置包括：具有C面主表面的蓝宝石衬底; 形成在蓝宝石衬底的主表面上的氮化铝膜; 形成在氮化铝膜的表面上以激发表面声波的梳状电极; 以及覆盖梳状电极和氮化铝膜的表面的二氧化硅膜。

9. 发明授权

US08149585B2 Interposer and electronic device using the same 有权
标题翻译：插件和电子设备使用相同
公开(公告)号：US08149585B2
公开(公告)日：2012-04-03
申请号：US11860132
申请日：2007-09-24
申请人： Shuichi Kawano
发明人： Shuichi Kawano
IPC分类号： H05K1/16
CPC分类号： H05K1/162 , H01L23/147 , H01L23/49816 , H01L23/49827 , H01L23/50 , H01L2224/05001 , H01L2224/05009 , H01L2224/05022 , H01L2224/05023 , H01L2224/05027 , H01L2224/05155 , H01L2224/05169 , H01L2224/05568 , H01L2224/05573 , H01L2224/13025 , H01L2224/16225 , H01L2924/00014 , H01L2924/15311 , H01L2924/157 , H05K1/0306 , H05K1/112 , H05K3/4608 , H05K2201/09309 , H05K2201/10674 , H01L2224/05599
摘要： Means for Solution: This interposer (10) comprises the silicon substrate (12), a plurality of through-hole conductors (20) formed on the above-described silicon substrate, and a capacitor (15) formed with the upper electrodes (14) and the lower electrodes (18) formed by extending the land portions of the above-described through-hole conductors and the dielectric layer (16) formed between the both electrodes. The rewiring layers (23-1, 23-2) formed as desired are formed on the layers other than the above-described capacitor layer.
摘要翻译：解决方案：该插入件（10）包括硅衬底（12），形成在上述硅衬底上的多个通孔导体（20）和形成有上电极（14）的电容器（15）以及通过延伸上述通孔导体的接地部分和形成在两个电极之间的电介质层（16）而形成的下电极（18）。根据需要形成的再布线层（23-1,23-2）形成在除了上述电容器层之外的层上。

10. 发明申请

US20110265324A1 INTERPOSER AND METHOD FOR MANUFACTURING INTERPOSER 审中-公开
标题翻译：插件和制造插件的方法
公开(公告)号：US20110265324A1
公开(公告)日：2011-11-03
申请号：US13183782
申请日：2011-07-15
申请人： Hajime Sakamoto , Shuichi Kawano , Daiki Komatsu , Hiroshi Segawa
发明人： Hajime Sakamoto , Shuichi Kawano , Daiki Komatsu , Hiroshi Segawa
IPC分类号： H05K3/10
CPC分类号： H01L21/4857 , H01L21/486 , H01L23/5383 , H01L23/5384 , H01L23/5386 , H01L24/16 , H01L2224/13099 , H01L2224/16237 , H01L2224/73204 , H01L2924/01002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01073 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04953 , H01L2924/10253 , H01L2924/12042 , H01L2924/15174 , H01L2924/15311 , H01L2924/1532 , H01L2924/181 , H01L2924/19041 , H01L2924/30107 , H01L2924/3011 , Y10T29/49126 , Y10T29/49155 , Y10T29/49165 , H01L2924/00
摘要： A method for manufacturing an interposer including forming a first insulating layer comprising an inorganic material on a supporting substrate, forming a first wire in the first insulating layer, forming a second insulating layer on a first side of the first insulating layer, forming a second wire with a longer wire length and a greater thickness than the first wire on the second insulating layer, and removing the supporting substrate.
摘要翻译：一种内插件的制造方法，包括在支撑基板上形成包括无机材料的第一绝缘层，在所述第一绝缘层中形成第一布线，在所述第一绝缘层的第一侧上形成第二绝缘层，形成第二布线具有比第二绝缘层上的第一线更长的线长度和更大的厚度，并且移除支撑衬底。

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