专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08278151B2 Tape for holding chip, method of holding chip-shaped workpiece, method of manufacturing semiconductor device using tape for holding chip, and method of manufacturing tape for holding chip 失效
标题翻译：用于保持芯片的带状物，保持芯片状工件的方法，使用用于保持芯片的带状半导体器件的制造方法以及用于保持芯片的带的制造方法
公开(公告)号：US08278151B2
公开(公告)日：2012-10-02
申请号：US12969959
申请日：2010-12-16
申请人： Shuhei Murata , Takeshi Matsumura , Koji Mizuno , Fumiteru Asai
发明人： Shuhei Murata , Takeshi Matsumura , Koji Mizuno , Fumiteru Asai
IPC分类号： H01L21/00
CPC分类号： H01L21/67132 , B32B7/12 , C09J7/22 , C09J7/38 , C09J2201/36 , C09J2203/326 , H01L24/45 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/73265 , H01L2924/01015 , H01L2924/01047 , H01L2924/10253 , H01L2924/3025 , Y10T428/24331 , Y10T428/24777 , Y10T428/24802 , H01L2924/00014 , H01L2924/00
摘要： The present invention aims to provide a tape for holding a chip that makes pasting and peeling of a chip-shaped workpiece easy. It is a tape for holding a chip having a configuration in which a pressure-sensitive adhesive layer is formed on a base material, wherein the pressure-sensitive adhesive layer has a chip-shaped workpiece pasting region onto which a chip-shaped workpiece is pasted and a frame pasting region onto which a mount frame is pasted, and that is used by pasting the mount frame to the frame pasting region, wherein the 180-degree peeling adhesive power of the pressure-sensitive adhesive layer to a silicon mirror wafer at the frame pasting region is 5 times or more the 180-degree peeling adhesive power of the pressure-sensitive adhesive layer to a silicon mirror wafer at the chip-shaped workpiece pasting region.
摘要翻译：本发明的目的在于提供一种用于保持芯片的带状物，其使得片状工件的粘贴和剥离变得容易。用于保持具有在基材上形成压敏粘合剂层的构造的芯片的胶带，其中粘合剂层具有将片状工件粘贴到其上的切屑状工件粘贴区域以及粘贴安装框架的框架粘贴区域，并且通过将安装框架粘贴到框架粘贴区域来使用，其中压敏粘合剂层的180度剥离粘合力到硅镜晶片框状粘贴区域是片状工件粘贴区域的粘合剂层向硅镜面晶片的180度剥离粘合力的5倍以上。

2. 发明申请

US20110159642A1 TAPE FOR HOLDING CHIP, METHOD OF HOLDING CHIP-SHAPED WORKPIECE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING TAPE FOR HOLDING CHIP, AND METHOD OF MANUFACTURING TAPE FOR HOLDING CHIP 失效
标题翻译：用于控股芯片的胶带，保持芯片形成的工件的方法，使用用于控制芯片的带的半导体器件的制造方法以及用于保持芯片的制造带的方法
公开(公告)号：US20110159642A1
公开(公告)日：2011-06-30
申请号：US12969959
申请日：2010-12-16
申请人： Shuhei Murata , Takeshi Matsumura , Koji Mizuno , Fumiteru Asai
发明人： Shuhei Murata , Takeshi Matsumura , Koji Mizuno , Fumiteru Asai
IPC分类号： H01L21/301 , B32B3/10 , C09J7/02
CPC分类号： H01L21/67132 , B32B7/12 , C09J7/22 , C09J7/38 , C09J2201/36 , C09J2203/326 , H01L24/45 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/73265 , H01L2924/01015 , H01L2924/01047 , H01L2924/10253 , H01L2924/3025 , Y10T428/24331 , Y10T428/24777 , Y10T428/24802 , H01L2924/00014 , H01L2924/00
摘要： The present invention aims to provide a tape for holding a chip that makes pasting and peeling of a chip-shaped workpiece easy. It is a tape for holding a chip having a configuration in which a pressure-sensitive adhesive layer is formed on a base material, wherein the pressure-sensitive adhesive layer has a chip-shaped workpiece pasting region onto which a chip-shaped workpiece is pasted and a frame pasting region onto which a mount frame is pasted, and that is used by pasting the mount frame to the frame pasting region, wherein the 180-degree peeling adhesive power of the pressure-sensitive adhesive layer to a silicon mirror wafer at the frame pasting region is 5 times or more the 180-degree peeling adhesive power of the pressure-sensitive adhesive layer to a silicon mirror wafer at the chip-shaped workpiece pasting region.
摘要翻译：本发明的目的在于提供一种用于保持芯片的带状物，其使得片状工件的粘贴和剥离变得容易。用于保持具有在基材上形成压敏粘合剂层的构造的芯片的胶带，其中粘合剂层具有将片状工件粘贴到其上的切屑状工件粘贴区域以及粘贴安装框架的框架粘贴区域，并且通过将安装框架粘贴到框架粘贴区域来使用，其中压敏粘合剂层的180度剥离粘合力到硅镜晶片框状粘贴区域是片状工件粘贴区域的粘合剂层向硅镜面晶片的180度剥离粘合力的5倍以上。

3. 发明申请

US20110217501A1 DICING DIE-BONDING FILM 审中-公开
标题翻译：定制电影胶片
公开(公告)号：US20110217501A1
公开(公告)日：2011-09-08
申请号：US13041086
申请日：2011-03-04
申请人： Yuichiro Shishido , Takeshi Matsumura , Shuhei Murata
发明人： Yuichiro Shishido , Takeshi Matsumura , Shuhei Murata
IPC分类号： B32B33/00
CPC分类号： H01L21/6836 , H01L24/27 , H01L24/29 , H01L24/45 , H01L24/73 , H01L24/83 , H01L2224/32225 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48227 , H01L2224/48465 , H01L2224/73265 , H01L2224/83191 , H01L2224/85207 , H01L2924/01012 , H01L2924/01015 , H01L2924/01029 , H01L2924/01047 , H01L2924/10253 , H01L2924/15747 , H01L2924/15788 , H01L2924/181 , H01L2924/3025 , Y10T428/1476 , H01L2924/00012 , H01L2924/3512 , H01L2924/00 , H01L2924/00014
摘要： A dicing die-bonding film with excellent peeling property when a diced semiconductor chip and its die-bonding film are, without deteriorating a holding force during dicing a semiconductor wafer even if it is thin. A dicing die-bonding film, comprising a dicing film having at least a pressure-sensitive adhesive layer formed on a supporting base material, and a die-bonding film formed on the pressure-sensitive adhesive layer, wherein the thickness of the pressure-sensitive adhesive layer is 5 to 80 μm, and when the dicing film is peeled off from the die-bonding film after dicing from the side of the die-bonding film to a part of the pressure-sensitive adhesive layer, the maximum value of a peeling force in the vicinity of the cut surface is 0.7 N/10 mm or less under the conditions of a temperature of 23° C., a peeling angle of 180°, and a peeling point moving rate of 10 mm/min.
摘要翻译：当切割的半导体芯片和芯片接合薄膜即使在薄的半导体晶片的切割时也不会使保持力变差，因此具有优异的剥离性能的切割芯片接合薄膜。一种切割芯片接合薄膜，包括至少形成在支撑基材上的压敏粘合剂层的切割薄膜和形成在压敏粘合剂层上的芯片接合薄膜，其中压敏粘合剂的厚度粘合剂层为5〜80μm，从芯片接合膜侧到粘合剂层的一部分切割后将切割膜从芯片接合薄膜剥离后，剥离的最大值在23℃，剥离角度180°，剥离移动速度为10mm / min的条件下，切割面附近的力为0.7N / 10mm以下。

4. 发明申请

US20100325877A1 POROUS FILM HAVING REACTIVE POLYMER LAYER THEREON FOR USE IN BATTERY SEPARATOR, AND USE OF THE POROUS FILM 审中-公开
标题翻译：具有用于电池分离器的反应性聚合物层的多孔膜，以及多孔膜的使用
公开(公告)号：US20100325877A1
公开(公告)日：2010-12-30
申请号：US12739544
申请日：2008-10-23
申请人： Shuhei Murata , Shigeru Fujita , Hiroyoshi Take , Yoshihiro Uetani , Shinji Bessho , Satoshi Nishikawa
发明人： Shuhei Murata , Shigeru Fujita , Hiroyoshi Take , Yoshihiro Uetani , Shinji Bessho , Satoshi Nishikawa
IPC分类号： H01M2/16 , H01M10/04
CPC分类号： H01M2/1653 , H01M2/1673 , H01M10/0525 , Y10T29/49108
摘要： The present invention relates to a reactive polymer layer-supported porous film for battery separator, including: a porous film substrate; and a reactive polymer layer supported on the porous film substrate, the reactive polymer layer having a thickness of 2 μm or less and being obtained by a crosslinking reaction between a polyfunctional isocyanate and a crosslinkable polymer having both a reactive group capable of reacting with an isocyanate group and a cationically polymerizable functional group in the molecule thereof, in which the reactive polymer layer has a plurality of through-holes having an average pore diameter of 5 μm or less.
摘要翻译：本发明涉及一种用于电池隔膜的反应性聚合物层负载的多孔膜，包括：多孔膜基材; 以及负载在多孔膜基材上的反应性聚合物层，反应性聚合物层的厚度为2μm以下，通过多官能异氰酸酯和具有能够与异氰酸酯反应的反应性基团的交联性聚合物之间的交联反应而得到基团和其分子中的阳离子聚合性官能团，其中反应性聚合物层具有多个平均孔径为5μm或更小的通孔。

5. 发明申请

US20100183908A1 CROSSLINKING POLYMER-SUPPORTED POROUS FILM FOR BATTERY SEPARATOR AND USE THEREOF 有权
标题翻译：用于电池分离器的交联聚合物支持的多孔膜及其使用
公开(公告)号：US20100183908A1
公开(公告)日：2010-07-22
申请号：US12664680
申请日：2008-06-06
申请人： Hiroyoshi Take , Shuhei Murata , Shigeru Fujita , Yoshihiro Uetani , Shinji Bessho , Satoshi Nishikawa
发明人： Hiroyoshi Take , Shuhei Murata , Shigeru Fujita , Yoshihiro Uetani , Shinji Bessho , Satoshi Nishikawa
IPC分类号： H01M2/16 , H01M6/00
CPC分类号： H01M2/1653 , C08F220/18 , C08F220/28 , C08F220/32 , H01M10/0525 , H01M10/0565 , H01M2300/0085 , Y10T29/49115
摘要： The present invention relates to a crosslinking polymer-supported porous film for battery separator, including: a porous film; and a crosslinking polymer supported on the porous film, the crosslinking polymer having a plurality of cation-polymerizable functional groups in the molecule thereof and having oxyalkylene groups represented by general formula (I): in which the Rs may be the same or different and each independently represent a hydrogen atom or a methyl group, and n represents an integer of 4 to 9, in a side chain thereof.
摘要翻译：本发明涉及用于电池隔膜的交联聚合物负载的多孔膜，其包括：多孔膜; 和负载在多孔膜上的交联聚合物，所述交联聚合物在其分子中具有多个阳离子可聚合官能团并具有由通式（I）表示的氧化烯基：其中Rs可以相同或不同，独立地表示氢原子或甲基，n表示4〜9的整数。

6. 发明授权

US08420247B2 Crosslinking polymer-supported porous film for battery separator and use thereof 有权
标题翻译：用于电池隔板的交联聚合物负载多孔膜及其用途
公开(公告)号：US08420247B2
公开(公告)日：2013-04-16
申请号：US12664680
申请日：2008-06-06
申请人： Hiroyoshi Take , Shuhei Murata , Shigeru Fujita , Yoshihiro Uetani , Shinji Bessho , Satoshi Nishikawa
发明人： Hiroyoshi Take , Shuhei Murata , Shigeru Fujita , Yoshihiro Uetani , Shinji Bessho , Satoshi Nishikawa
IPC分类号： H01M2/14
CPC分类号： H01M2/1653 , C08F220/18 , C08F220/28 , C08F220/32 , H01M10/0525 , H01M10/0565 , H01M2300/0085 , Y10T29/49115
摘要： The present invention relates to a crosslinking polymer-supported porous film for battery separator, including: a porous film; and a crosslinking polymer supported on the porous film, the crosslinking polymer having a plurality of cation-polymerizable functional groups in the molecule thereof and having oxyalkylene groups represented by general formula (I): in which the Rs may be the same or different and each independently represent a hydrogen atom or a methyl group, and n represents an integer of 4 to 9, in a side chain thereof.
摘要翻译：本发明涉及用于电池隔膜的交联聚合物负载的多孔膜，其包括：多孔膜; 和负载在多孔膜上的交联聚合物，所述交联聚合物在其分子中具有多个阳离子可聚合官能团并具有由通式（I）表示的氧化烯基：其中Rs可以相同或不同，独立地表示氢原子或甲基，n表示4〜9的整数。

7. 发明授权

US08268682B2 Method for manufacturing a semiconductor integrated circuit device 失效
标题翻译：半导体集成电路器件的制造方法
公开(公告)号：US08268682B2
公开(公告)日：2012-09-18
申请号：US13049889
申请日：2011-03-16
申请人： Takuya Futase , Shuhei Murata , Takeshi Hayashi
发明人： Takuya Futase , Shuhei Murata , Takeshi Hayashi
IPC分类号： H01L21/336
CPC分类号： H01L21/67167 , H01L21/823807 , H01L21/823814 , H01L21/823835 , H01L29/7843
摘要： When a natural oxide film is left at the interface between a metal silicide layer and a silicon nitride film, in various heating steps (steps involving heating of a semiconductor substrate, such as various insulation film and conductive film deposition steps) after deposition of the silicon nitride film, the metal silicide layer partially abnormally grows due to oxygen of the natural oxide film occurring on the metal silicide layer surface. A substantially non-bias (including low bias) plasma treatment is performed in a gas atmosphere containing an inert gas as a main component on the top surface of a metal silicide film of nickel silicide or the like over source/drain of a field-effect transistor forming an integrated circuit. Then, a silicon nitride film serving as an etching stop film of a contact process is deposited. As a result, without causing undesirable cutting of the metal silicide film, the natural oxide film over the top surface of the metal silicide film can be removed.
摘要翻译：在金属硅化物层和氮化硅膜之间的界面处留有自然氧化膜时，在各种加热步骤（包括加热半导体衬底，诸如各种绝缘膜和导电膜沉积步骤的步骤）之后，硅沉积由于在金属硅化物层表面上发生的自然氧化膜的氧，金属硅化物层部分地异常生长。基于非偏置（包括低偏压）等离子体处理在含有惰性气体作为主要成分的气体气氛中，在场效应源极/漏极上的硅化镍等的金属硅化物膜的顶表面上进行晶体管形成集成电路。然后，沉积作为接触处理的蚀刻停止膜的氮化硅膜。结果，不会导致金属硅化物膜的不期望的切割，可以去除金属硅化物膜的顶表面上方的自然氧化膜。

8. 发明申请

US20110165743A1 METHOD FOR MANUFACTURING A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 失效
标题翻译：制造半导体集成电路器件的方法
公开(公告)号：US20110165743A1
公开(公告)日：2011-07-07
申请号：US13049889
申请日：2011-03-16
申请人： TAKUYA FUTASE , Shuhei Murata , Takeshi Hayashi
发明人： TAKUYA FUTASE , Shuhei Murata , Takeshi Hayashi
IPC分类号： H01L21/336
CPC分类号： H01L21/67167 , H01L21/823807 , H01L21/823814 , H01L21/823835 , H01L29/7843
摘要： When a natural oxide film is left at the interface between a metal silicide layer and a silicon nitride film, in various heating steps (steps involving heating of a semiconductor substrate, such as various insulation film and conductive film deposition steps) after deposition of the silicon nitride film, the metal silicide layer partially abnormally grows due to oxygen of the natural oxide film occurring on the metal silicide layer surface. A substantially non-bias (including low bias) plasma treatment is performed in a gas atmosphere containing an inert gas as a main component on the top surface of a metal silicide film of nickel silicide or the like over source/drain of a field-effect transistor forming an integrated circuit. Then, a silicon nitride film serving as an etching stop film of a contact process is deposited. As a result, without causing undesirable cutting of the metal silicide film, the natural oxide film over the top surface of the metal silicide film can be removed.
摘要翻译：在金属硅化物层和氮化硅膜之间的界面处留有自然氧化物膜时，在各种加热步骤（包括加热半导体衬底，诸如各种绝缘膜和导电膜沉积步骤的步骤）之后，沉积硅由于在金属硅化物层表面上发生的自然氧化膜的氧，金属硅化物层部分地异常生长。基于非偏置（包括低偏压）等离子体处理在含有惰性气体作为主要成分的气体气氛中，在场效应源极/漏极上的硅化镍等的金属硅化物膜的顶表面上进行晶体管形成集成电路。然后，沉积作为接触处理的蚀刻停止膜的氮化硅膜。结果，不会导致金属硅化物膜的不期望的切割，可以去除金属硅化物膜的顶表面上方的自然氧化膜。

9. 发明授权

US07923319B2 Method for manufacturing a semiconductor integrated circuit device circuit device 有权
标题翻译：半导体集成电路器件电路器件的制造方法
公开(公告)号：US07923319B2
公开(公告)日：2011-04-12
申请号：US12622524
申请日：2009-11-20
申请人： Takuya Futase , Shuhei Murata , Takeshi Hayashi
发明人： Takuya Futase , Shuhei Murata , Takeshi Hayashi
IPC分类号： H01L21/336
CPC分类号： H01L21/67167 , H01L21/823807 , H01L21/823814 , H01L21/823835 , H01L29/7843
摘要： When a natural oxide film is left at the interface between a metal silicide layer and a silicon nitride film, in various heating steps (steps involving heating of a semiconductor substrate, such as various insulation film and conductive film deposition steps) after deposition of the silicon nitride film, the metal silicide layer partially abnormally grows due to oxygen of the natural oxide film occurring on the metal silicide layer surface. A substantially non-bias (including low bias) plasma treatment is performed in a gas atmosphere containing an inert gas as a main component on the top surface of a metal silicide film of nickel silicide or the like over source/drain of a field-effect transistor forming an integrated circuit. Then, a silicon nitride film serving as an etching stop film of a contact process is deposited. As a result, without causing undesirable cutting of the metal silicide film, the natural oxide film over the top surface of the metal silicide film can be removed.
摘要翻译：在金属硅化物层和氮化硅膜之间的界面处留有自然氧化物膜时，在各种加热步骤（包括加热半导体衬底，诸如各种绝缘膜和导电膜沉积步骤的步骤）之后，沉积硅由于在金属硅化物层表面上发生的自然氧化膜的氧，金属硅化物层部分地异常生长。基于非偏置（包括低偏压）等离子体处理在含有惰性气体作为主要成分的气体气氛中，在场效应源极/漏极上的硅化镍等的金属硅化物膜的顶表面上进行晶体管形成集成电路。然后，沉积作为接触处理的蚀刻停止膜的氮化硅膜。结果，不会导致金属硅化物膜的不期望的切割，可以去除金属硅化物膜的顶表面上方的自然氧化膜。

10. 发明申请

US20130302599A1 ANTI-FOG COATED ARTICLE 审中-公开
标题翻译：防雾涂层物品
公开(公告)号：US20130302599A1
公开(公告)日：2013-11-14
申请号：US13990676
申请日：2011-11-14
申请人： Kazuaki Oya , Kazutaka Kamitani , Toyoyuki Teranishi , Shuhei Murata
发明人： Kazuaki Oya , Kazutaka Kamitani , Toyoyuki Teranishi , Shuhei Murata
IPC分类号： C09K3/18
CPC分类号： G02B1/18 , C03C1/008 , C03C17/006 , C03C17/009 , C08G77/02 , C08K3/36 , C09D5/1618 , C09D5/1668 , C09D129/14 , C09K3/18 , G02B1/10 , G02B27/0006 , Y10T428/265 , C08K5/0091 , C08K13/02
摘要： The present invention provides an antifog-film-coated article including an antifog film having high hardness while maintaining sufficient antifog performance, which article can be employed in various applications, including antifog mirrors, windowpanes for automobiles, and windowpanes for buildings. The antifog-film-coated article of the present invention includes a hard substrate, and a water-absorbing composite film formed on the substrate, wherein the water-absorbing composite film contains a polyvinyl acetal resin; colloidal silica in an amount of 30 to 80 parts by mass on the basis of 100 parts by mass of the resin; and silica-equivalent particles derived from a hydrolysis product or partial hydrolysis product of a silicon alkoxide compound in an amount of 5 to 55 parts by mass on the basis of 100 parts by mass of the resin.
摘要翻译：本发明提供一种防雾膜涂布制品，其包含具有高硬度的防雾膜，同时保持足够的防雾性能，该制品可用于各种应用中，包括防雾镜，汽车用窗玻璃和建筑物的窗玻璃。本发明的防雾膜被覆制品包括硬质基材和形成在基材上的吸水性复合膜，其中吸水性复合膜含有聚乙烯醇缩醛树脂; 基于100质量份树脂30〜80质量份的胶态二氧化硅; 基于100质量份树脂，衍生自硅醇盐化合物的水解产物或部分水解产物的二氧化硅当量颗粒为5至55质量份。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式