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1. 发明专利

JP2012250888A SiC SINGLE CRYSTAL, METHOD FOR PRODUCING THE SAME, SiC WAFER, AND SEMICONDUCTOR DEVICE 有权
标题翻译： SiC单晶，其制造方法，SiC WAFER和SEMICONDUCTOR DEVICE
公开(公告)号：JP2012250888A
公开(公告)日：2012-12-20
申请号：JP2011125886
申请日：2011-06-05
申请人： Toyota Central R&D Labs Inc , 株式会社豊田中央研究所 , Denso Corp , 株式会社デンソー , Toyota Motor Corp , トヨタ自動車株式会社 , Showa Denko Kk , 昭和電工株式会社
发明人： GUNJISHIMA TSUKURU , SHIGEFUJI KEISUKE , URAGAMI YASUSHI , YAMADA MASANORI , ADACHI AYUMI , KOBAYASHI MASAKAZU
IPC分类号： C30B29/36 , H01L21/203
CPC分类号： C30B23/025 , C30B23/005 , C30B29/36 , H01L21/02378 , H01L21/0243 , H01L21/02433 , H01L21/02529 , H01L21/02587 , H01L21/02609 , H01L29/1608 , Y10T428/21
摘要： PROBLEM TO BE SOLVED: To provide an SiC single crystal having few anisotropic crystals or heterogeneous polymorphic crystals, allowing cutting out of a large-diameter {0001} plane substrate, and to provide a method for producing the SiC single crystal, and an SiC wafer cut out from such an SiC single crystal.SOLUTION: When producing an SiC single crystal having a large-diameter {0001} plane by repeating a-plane growth, the a-plane of the SiC single crystal is allowed to grow so that the ratio S(=S×100/S) of the area (S) of a Si plane side facet region to the whole area (S) of the growth plane is kept at 20% or less.
摘要翻译：要解决的问题：为了提供一种具有很少的各向异性晶体或异相多晶体的SiC单晶，可以切割出大直径ä10001平面衬底，并提供一种SiC单晶的制造方法，从这种SiC单晶切出SiC晶片。解决方案：通过重复a面生长制造具有大直径ä0001}面的SiC单晶时，可以使SiC单晶的a面成长，使S （= S 1 ×100 / S 2 ）（S 2 ）的Si平面侧面区域的“POST”> 1 保持在20％以下。版权所有（C）2013，JPO＆INPIT

2. 发明专利

JP2012240906A Apparatus for manufacturing silicon carbide single crystal, and method for manufacturing the silicon carbide single crystal 有权
标题翻译：用于制造单晶碳化硅的装置，以及用于制造碳化硅单晶的方法
公开(公告)号：JP2012240906A
公开(公告)日：2012-12-10
申请号：JP2011116058
申请日：2011-05-24
申请人： Showa Denko Kk , 昭和電工株式会社 , Toyota Central R&D Labs Inc , 株式会社豊田中央研究所 , Denso Corp , 株式会社デンソー , Toyota Motor Corp , トヨタ自動車株式会社
发明人： MATSUSE AKIHIRO , GUNJISHIMA TSUKURU , YAMADA MASANORI , ADACHI AYUMI
IPC分类号： C30B29/36
摘要： PROBLEM TO BE SOLVED: To provide an apparatus for manufacturing a silicon carbide single crystal, which can manufacture a high quality and long silicon carbide single crystal, and to provide a method for manufacturing the silicon carbide single crystal.SOLUTION: In the apparatus for manufacturing the silicon carbide single crystal, a silicon carbide single crystal 71 is grown on a silicon carbide seed crystal 35 attached to a pedestal 33 in a crucible 31 by supplying a raw material gas onto the growth surface 35a of the silicon carbide seed crystal 35. The apparatus is configured so as to reduce the thickness of the pedestal 33, and the thickness of the pedestal 33 is reduced in accordance with the growth of the silicon carbide single crystal 71.
摘要翻译：要解决的问题：提供一种可制造高质量和长的碳化硅单晶的碳化硅单晶的制造装置，并提供一种制造碳化硅单晶的方法。解决方案：在用于制造碳化硅单晶的装置中，碳化硅单晶71通过将原料气体供应到生长表面上而生长在安装在坩埚31中的基座33上的碳化硅晶种35上 35a。该装置被配置为减小基座33的厚度，并且底座33的厚度根据碳化硅单晶71的增长而减小。COPYRIGHT （C）2013，JPO＆INPIT

3. 发明专利

JP2012201584A Apparatus and method for producing silicon carbide single crystal, and growth method thereof 有权
标题翻译：用于生产碳化硅单晶的装置和方法及其生长方法
公开(公告)号：JP2012201584A
公开(公告)日：2012-10-22
申请号：JP2011070833
申请日：2011-03-28
申请人： Showa Denko Kk , Denso Corp , Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 昭和電工株式会社 , 株式会社デンソー , 株式会社豊田中央研究所
发明人： MASUDA TAKASHI , KONDO HIROYUKI , HIROSE FUSAO , GUNJISHIMA TSUKURU , ADACHI AYUMI
IPC分类号： C30B29/36 , C30B23/06
摘要： PROBLEM TO BE SOLVED: To provide an apparatus and a method for producing a silicon carbide single crystal, capable of producing a lengthy single crystal having a high quality, and to provide a growth method thereof.SOLUTION: In this apparatus for producing a silicon carbide single crystal including a guide member 7 for guiding raw material gas to the silicon carbide seed crystal 5 side, a crucible 3 comprises a crucible upper part 3a and a crucible lower part 3b which are relatively movable mutually in the vertical direction, and the guide member 7 comprises a guide member upper part 7a fixed to the crucible upper part 3a and a guide member lower part 7b fixed to the crucible lower part 3b, and a hole part 10 is provided at least on either of the guide member upper part 7a and the guide member lower part 7b, and the guide member upper part 7a and the guide member lower part 7b are arranged so that the hole part 10 is opened/closed according to relative movement of the crucible upper part 3a and the crucible lower part 3b.
摘要翻译：要解决的问题：提供能够生产具有高质量的长单晶的生产碳化硅单晶的装置和方法，并提供其生长方法。解决方案：在这种用于制造包括用于将原料气体引导到碳化硅晶种5侧的引导构件7的碳化硅单晶的装置中，坩埚3包括坩埚上部3a和坩埚下部3b，相对于上下方向相对移动，导向部件7具有固定在坩埚上部3a上的引导部件上部7a和固定于坩埚下部3b的引导部件下部7b，并且设置有孔部10 至少在引导构件上部7a和引导构件下部7b中的任一个上，并且引导构件上部7a和引导构件下部7b布置成使得孔部10根据相对运动而打开/关闭坩埚上部3a和坩埚下部3b。版权所有（C）2013，JPO＆INPIT

4. 发明专利

JP2012240894A Apparatus for manufacturing single crystal, single crystal, method for manufacturing the single crystal, and wafer 有权
标题翻译：用于制造单晶，单晶的装置，用于制造单晶和波长的方法
公开(公告)号：JP2012240894A
公开(公告)日：2012-12-10
申请号：JP2011114006
申请日：2011-05-20
申请人： Toyota Central R&D Labs Inc , 株式会社豊田中央研究所 , Denso Corp , 株式会社デンソー , Toyota Motor Corp , トヨタ自動車株式会社 , Showa Denko Kk , 昭和電工株式会社
发明人： GUNJISHIMA TSUKURU , YAMADA MASANORI , URAGAMI YASUSHI , KONDO HIROYUKI , ADACHI AYUMI , MASUDA TAKASHI
IPC分类号： C30B23/06 , C30B29/36
摘要： PROBLEM TO BE SOLVED: To provide an apparatus for manufacturing a single crystal, which allows the manufacturing of a long single crystal almost free from defects and cracks without causing an increase in processing cost and time, to provide a method for manufacturing a single crystal using the apparatus, and to provide a single crystal and a wafer manufactured by using such a method.SOLUTION: A seed crystal 4 is fixed on the inner bottom surface of a guide member 24, and a temperature gradient adjusting member 26 is arranged in the circumference of the guide member 24. In a growth process of a single crystal 6, the single crystal 6 is grown on the seed crystal 4 by heating a raw material 2 while adjusting the relative position of the guide member 24 and the temperature gradient adjusting member 26 so as to form such a temperature gradient in which heat flows from the outside of the guide member 24 toward the single crystal 6 in the vicinity of the growth surface side of the single crystal 6 and heat is discharged from the single crystal 6 toward the outside of the guide member 24 in the vicinity of the seed crystal 4 side of the single crystal 6.
摘要翻译：要解决的问题：为了提供一种制造单晶的装置，其允许制造几乎没有缺陷和裂纹的长单晶，而不会导致加工成本和时间的增加，以提供制造方法使用该装置的单晶，并提供通过使用这种方法制造的单晶和晶片。解决方案：种子晶体4固定在引导构件24的内底表面上，温度梯度调节构件26布置在引导构件24的周围。在单晶6的生长过程中，通过加热原料2，同时调节引导构件24和温度梯度调节构件26的相对位置，在晶种4上生长单晶6，从而形成从外部流出热量的温度梯度在单晶6的生长面侧附近朝向单晶6的引导构件24，在单晶6的晶种4侧的附近，从单晶6朝向引导构件24的外侧排出单晶6.版权所有（C）2013，JPO＆INPIT

5. 发明专利

JP2013139347A Apparatus for producing single crystal, single crystal, method for producing the single crystal, wafer, and semiconductor device 有权
标题翻译：用于生产单晶，单晶的装置，用于生产单晶，晶体和半导体器件的方法
公开(公告)号：JP2013139347A
公开(公告)日：2013-07-18
申请号：JP2011289966
申请日：2011-12-28
申请人： Toyota Central R&D Labs Inc , 株式会社豊田中央研究所 , Denso Corp , 株式会社デンソー , Showa Denko Kk , 昭和電工株式会社 , Toyota Motor Corp , トヨタ自動車株式会社
发明人： GUNJISHIMA TSUKURU , YAMADA MASANORI , KOBAYASHI MASAKAZU , ADACHI AYUMI
IPC分类号： C30B23/06 , C30B29/36 , C30B29/38
摘要： PROBLEM TO BE SOLVED: To provide: an apparatus for producing a single crystal, wherein a long single crystal that is less likely to cause flaws and cracks can be produced without increasing a processing cost and processing time: a method for producing the single crystal using the apparatus; and the single crystal and a wafer, both being produced by using such method.SOLUTION: A temperature gradient-controlling member 26a is arranged around a seed crystal 4, and then a local temperature gradient-relieving member 28a is arranged between the seed crystal 4 and the temperature gradient-controlling member 26a, wherein the local temperature gradient-relieving member has a function of relieving a maximal value of a temperature gradient caused in a region right above a growth axis direction of the seed crystal 4 in a single crystal 6 growing right above the seed crystal 4. The temperature gradient-controlling member 26a is arranged around the seed crystal 4 or the single crystal 6 so that, in a predetermined term from when at least the single crystal 6 starts growing till when the single crystal ends the growing, a temperature gradient may occur in which: a heat flows from the outside of the single crystal 6 toward the inside thereof in the vicinity of a growth face side of the single crystal 6; and the heat is released from the inside of the single crystal 6 toward the outside thereof in the vicinity of a seed crystal 4 side of the single crystal 6.
摘要翻译：要解决的问题：提供：一种用于制造单晶的装置，其中可以在不增加处理成本和处理时间的情况下制造不太可能引起缺陷和裂纹的长单晶：使用装置; 以及通过使用这种方法制造的单晶和晶片。解决方案：温度梯度控制构件26a布置在晶种4周围，然后局部温度梯度缓冲构件28a布置在籽晶4之间和温度梯度控制部件26a，其中局部温度梯度缓冲部件具有在生长的单晶6中释放在晶种4的生长轴方向正上方的区域中产生的温度梯度的最大值的功能温度梯度控制部件26a配置在晶种4或单晶6的周围，以从至少单晶6开始生长至单晶结束为止的规定期间可能会发生温度梯度，其中：在s的生长面侧附近，热量从单晶6的外侧向其内部流动单晶6; 并且在单晶6的籽晶4侧附近，从单晶6的内部朝向外部释放热。

6. 发明专利

JP2013095632A SiC SINGLE CRYSTAL, METHOD FOR PRODUCING THE SAME, SiC WAFER, SEMICONDUCTOR DEVICE, AND RAW MATERIAL FOR PRODUCING SiC SINGLE CRYSTAL 有权
标题翻译： SiC单晶，其制造方法，SiC波导，半导体器件和用于生产SiC单晶的原材料
公开(公告)号：JP2013095632A
公开(公告)日：2013-05-20
申请号：JP2011239605
申请日：2011-10-31
申请人： Toyota Central R&D Labs Inc , 株式会社豊田中央研究所 , Toyota Motor Corp , トヨタ自動車株式会社 , Denso Corp , 株式会社デンソー , Showa Denko Kk , 昭和電工株式会社
发明人： SHIGEFUJI KEISUKE , GUNJISHIMA TSUKURU , URAGAMI YASUSHI , KOBAYASHI MASAKAZU , ADACHI AYUMI
IPC分类号： C30B29/36
摘要： PROBLEM TO BE SOLVED: To provide: an SiC single crystal having few hollow defects or inclusions; a method for producing the same; an SiC wafer and a semiconductor device manufactured from such an SiC single crystal; and a raw material for producing the SiC single crystal which is suitable for producing an SiC single crystal having few hollow defects or inclusions.SOLUTION: An SiC single crystal includes a single crystal obtained by growing SiC on a growing surface by using a seed crystal utilizing a surface approximately vertical to {0001} surface as the growing surface, wherein the density of hollow defects extending approximately in parallel with a growth direction of the single crystal is ≤600/cm. An SiC wafer and a semiconductor device using the SiC single crystal are also provided. Such an SiC single crystal is obtained by growing a single crystal on an a-surface growth substrate by using a raw material for producing the SiC single crystal obtained by subliming preliminarily ≥2% of the mass of SiC powder.
摘要翻译：要解决的问题：提供：具有很少中空缺陷或夹杂物的SiC单晶; 其制造方法; SiC晶片和由这种SiC单晶制造的半导体器件; 以及用于制造SiC单晶的原料，其适合于制造具有中空缺陷或夹杂物的SiC单晶。解决方案：SiC单晶包括通过使用大致垂直于ä0001}表面的表面的晶种在生长表面上生长SiC获得的单晶作为生长表面，其中中空缺陷的密度大致平行延伸单晶的生长方向为≤600/ cm 2 。还提供了SiC晶片和使用SiC单晶的半导体器件。这样的SiC单晶通过使用用于制备通过初步升高SiC粉末质量的≥2％而获得的SiC单晶的原料，在单面生长衬底上生长单晶来获得。版权所有（C）2013，JPO＆INPIT

7. 发明专利

JP2015005658A 炭化珪素半導体成膜装置およびそれを用いた成膜方法有权
标题翻译：硅碳化硅半导体膜沉积装置和使用其的膜沉积方法
公开(公告)号：JP2015005658A
公开(公告)日：2015-01-08
申请号：JP2013130836
申请日：2013-06-21
申请人：株式会社デンソー , Denso Corp , 一般財団法人電力中央研究所 , Central Research Institute Of Electric Power Industry , 株式会社ニューフレアテクノロジー , Nuflare Technology Inc , トヨタ自動車株式会社 , Toyota Motor Corp , 株式会社豊田中央研究所 , Toyota Central R&D Labs Inc
发明人： FUJIBAYASHI HIROAKI , NAITO MASAMI , ITO MASAHIKO , KAMATA ISAO , TSUCHIDA SHUICHI , ITO HIDEKI , ADACHI AYUMI , NISHIKAWA KOICHI
IPC分类号： H01L21/205 , C23C16/455
CPC分类号： C30B25/14 , C23C16/325 , C23C16/45519 , C23C16/45548 , C23C16/45553 , C23C16/45574 , C23C16/45587 , C23C16/4584 , C23C16/4586 , C30B25/165 , C30B29/36 , H01L21/02529 , H01L21/02576 , H01L21/02579 , H01L21/02598 , H01L21/0262
摘要：【課題】SiC半導体におけるパーティクル発生の抑制と、膜厚および濃度の面内均一性の両立を図る。【解決手段】各分離部屋41〜43に各種ガスが別々に導入されるようにし、Si原料含有ガスとC原料含有ガスが第1、第2分離部屋41、42から延びる供給路41b、42を通じて独立して成長空間に供給されるようにする。また、第3分離部屋43から、供給路43bを通じて、Si原料含有ガスとC原料含有ガスの間に原料ガス以外のガスとなる第3ガスが導入されるようにする。これにより、供給路41b、42bの出口を出たのち、成長空間において初めて各種ガスが混じるようにできる。また、第3ガスが第1、第2ガスの間に流されることから、第1、第2ガスの拡散が低減される。このため、原料ガスが供給路41b、42b外側に拡散することを抑制でき、不要なSiC生成物が形成されることを抑制できる。【選択図】図1
摘要翻译：要解决的问题：为了实现对SiC半导体中的颗粒产生的抑制和膜厚度和浓度的面内均匀性的解决方案。解决方案：各种气体被独立地引入各个分离的室41-43中，并且含有Si材料的气体含有C材料的气体通过从第一和第二分离室41,42延伸的供给路径41b，42而独立地供给到生长空间。作为除了材料g以外的气体的第三气体被引入含有Si材料的气体和含有C材料的气体。因此，在从供给路径41b，42b的出口排出后，在生长空间中首先将各种气体混合。由于允许第三气体在第一气体和第二气体之间流动，所以第一气体和第二气体的扩散减少。由此，可以抑制原料气体向供给通路41b，42b的外部扩散，能够抑制不必要的SiC制品的形成。

8. 发明专利

JP2013030758A Film formation device and film formation method 有权
标题翻译：胶片形成装置和胶片形成方法
公开(公告)号：JP2013030758A
公开(公告)日：2013-02-07
申请号：JP2012135435
申请日：2012-06-15
申请人： Nuflare Technology Inc , 株式会社ニューフレアテクノロジー , Central Research Institute Of Electric Power Industry , 一般財団法人電力中央研究所 , Denso Corp , 株式会社デンソー , Toyota Motor Corp , トヨタ自動車株式会社 , Toyota Central R&D Labs Inc , 株式会社豊田中央研究所
发明人： SUZUKI KUNIHIKO , ITO HIDEKI , IKETANI NAOHISA , TSUCHIDA SHUICHI , KAMATA ISAO , ITO MASAHIKO , NAITO MASAMI , FUJIBAYASHI HIROAKI , ADACHI AYUMI , NISHIKAWA KOICHI
IPC分类号： H01L21/205 , C23C16/46
CPC分类号： C30B25/10
摘要： PROBLEM TO BE SOLVED: To provide a film formation device and a film formation method which efficiently heat a substrate with fine temperature control while suppressing cracks of a liner.SOLUTION: A film formation device 100 comprises: a chamber 1; a liner 2 dividing an inner wall 1a of the chamber 1 from a space A; a main heater 9 heating a substrate 7 from below; and auxiliary heaters 18 disposed between the liner 2 and the inner wall 1a and heating the substrate 7 from above. Both of the main heater 9 and the auxiliary heaters 18 are resistor heating type heaters. The auxiliary heaters 18 includes a first auxiliary heater 18a, a second auxiliary heater 18b, and a third auxiliary heater 18c. The first auxiliary heater 18a heats the substrate 7 in cooperation with the main heater 9. The second auxiliary heater 18b and the third auxiliary heater 18c heat the liner 2 with output lower than that of the first auxiliary heater 18a.
摘要翻译：要解决的问题：提供一种在抑制衬垫的裂纹的同时，在精细的温度控制下有效地加热衬底的成膜装置和成膜方法。解决方案：成膜装置100包括：室1; 将空腔1的内壁1a与空间A分隔开的衬垫2; 从下方加热基板7的主加热器9。以及设置在衬套2和内壁1a之间的辅助加热器18，并从上方加热衬底7。主加热器9和辅助加热器18都是电阻加热型加热器。辅助加热器18包括第一辅助加热器18a，第二辅助加热器18b和第三辅助加热器18c。第一辅助加热器18a与主加热器9配合加热基板7.第二辅助加热器18b和第三辅助加热器18c以比第一辅助加热器18a低的输出加热衬套2。版权所有（C）2013，JPO＆INPIT

9. 发明专利

JP2011219336A Method and apparatus for manufacturing silicon carbide single crystal 有权
标题翻译：用于制造单晶碳化硅的方法和装置
公开(公告)号：JP2011219336A
公开(公告)日：2011-11-04
申请号：JP2010092960
申请日：2010-04-14
申请人： Denso Corp , Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社デンソー , 株式会社豊田中央研究所
发明人： URAGAMI YASUSHI , KONDO HIROYUKI , ADACHI AYUMI , GUNJISHIMA TSUKURU
IPC分类号： C30B29/36
摘要： PROBLEM TO BE SOLVED: To provide an apparatus for manufacturing a silicon carbide single crystal which allows to supply an appropriate amount of carbon atoms to a SiC single crystal while suppressing mixing of an inclusion (a large mass) of carbon powder discharged from a crucible with the SiC single crystal.SOLUTION: In a hollow of a crucible 4, a cylindrical material 10 which has a diameter smaller than the inner diameter of a container body 2 and is made of metal carbide is disposed apart from an inner wall 2a of the container body 2 along the inner wall 2a on a powder raw material 8. While, on a lid member 3, a coating film 3b of metal carbide is formed on the side of the container body 2 from a seed crystal 7 of an inner wall 3a of the lid member 3. This suppresses discharge of masses of carbon powder from the lid member 3, and an appropriate amount of the carbon powder discharged from the inner wall 2a of the container body 2 is supplied to the SiC single crystal 9 during growth.
摘要翻译：要解决的问题：提供一种用于制造碳化硅单晶的装置，其允许向SiC单晶提供适量的碳原子，同时抑制从碳化硅单晶排出的夹杂物（大量）的碳粉的混合具有SiC单晶的坩埚。解决方案：在坩埚4的中空中，直径小于容器主体2的内径并且由金属碳化物制成的圆柱形材料10与容器主体2的内壁2a分开设置沿着内壁2a在粉末原料8上。同时，在盖构件3上，从容器主体2的内壁3a的晶种7形成金属碳化物的涂膜3b 从而抑制碳粉末从盖部件3的排出，在生长时向碳化硅单晶9供给适当量的从容器主体2的内壁2a排出的碳粉末。版权所有（C）2012，JPO＆INPIT

10. 发明专利

JP2011219294A Method for producing silicon carbide single crystal 有权
标题翻译：生产碳化硅单晶的方法
公开(公告)号：JP2011219294A
公开(公告)日：2011-11-04
申请号：JP2010088627
申请日：2010-04-07
申请人： Denso Corp , Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社デンソー , 株式会社豊田中央研究所
发明人： KONDO HIROYUKI , ADACHI AYUMI , GUNJISHIMA TSUKURU
IPC分类号： C30B29/36 , C30B23/06
摘要： PROBLEM TO BE SOLVED: To provide a method for producing a SiC single crystal, by which cracking and distortion of the SiC single crystal are suppressed.SOLUTION: In the method for producing a SiC single crystal, projection growth wherein the SiC single crystal 6 is grown to have such a projection shape that the central part of the SiC single crystal 6 is projected from the outer edge part and recess growth wherein the central part of the SiC single crystal 6 is recessed from the outer edge part are performed in order. A tensile stress is generated in the vicinity of the central part of the SiC single crystal 6 and a compression stress is generated in the outer edge part during the projection growth, and a compression stress is generated in the vicinity of the central part of the SiC single crystal 6 and a tensile stress is generated in the outer edge part during the recess growth. Then, a reverse stress is generated when the SiC single crystal 6 is cooled. Thereby, when the SiC single crystal 6 is cooled, a region where both of the compression stress and tensile stress are generated is provided in the vicinity of the central part of the SiC single crystal 6, and a region where both of the compression stress and tensile stress are generated is provided similarly in the outer edge part. Consequently, it is possible to suppress cracking and distortion of the SiC single crystal during cooling.
摘要翻译：待解决的问题：提供一种SiC单晶的制造方法，其中SiC单晶的破裂和变形被抑制。解决方案：在SiC单晶的制造方法中，SiC单晶6生长为具有使SiC单晶6的中央部从外缘部突出的突起形状的突起生长和凹部其中SiC单晶6的中心部分从外边缘部分凹陷的生长依次进行。在SiC单晶6的中央部附近产生拉伸应力，在投影生长期间在外缘部产生压缩应力，在SiC的中心部附近产生压缩应力单晶6，并且在凹部生长期间在外边缘部分产生拉伸应力。然后，当SiC单晶6被冷却时产生反向应力。因此，当SiC单晶6被冷却时，在SiC单晶6的中央部附近设置压缩应力和拉伸应力两者的区域，压缩应力和在外边缘部分类似地设置拉伸应力。因此，可以抑制冷却时SiC单晶的开裂和变形。版权所有（C）2012，JPO＆INPIT

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