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    • 1. 发明授权
    • Vertical transistor structure
    • 垂直晶体管结构
    • US08614479B2
    • 2013-12-24
    • US13046706
    • 2011-03-12
    • Shou-Cheng WengHuai-An Li
    • Shou-Cheng WengHuai-An Li
    • H01L29/66
    • H01L51/0554H01L29/42392H01L29/78642H01L51/057
    • A vertical transistor structure includes a substrate, a source, a first gate, a first insulating layer, a second gate, a gate insulating layer, a drain, a second insulating layer, and a semiconductor channel layer. The source is configured on the substrate. The first gate is configured on the source and has at least one first through hole. The first insulating layer is between the first gate and the source. The second gate is configured on the first gate and has at least one second through hole. The gate insulating layer is between the first and second gates and has at least one third through hole. The first, second, and third through holes are communicated with one another. The drain is configured on the second gate. The second insulating layer is configured between the second gate and the drain. The semiconductor channel layer fills the first, second, and third through holes.
    • 垂直晶体管结构包括基板,源极,第一栅极,第一绝缘层,第二栅极,栅极绝缘层,漏极,第二绝缘层和半导体沟道层。 源设置在基板上。 第一个栅极配置在源极上,并具有至少一个第一通孔。 第一绝缘层位于第一栅极和源极之间。 第二栅极配置在第一栅极上并且具有至少一个第二通孔。 栅极绝缘层位于第一和第二栅极之间,并具有至少一个第三通孔。 第一,第二和第三通孔彼此连通。 漏极配置在第二个门上。 第二绝缘层配置在第二栅极和漏极之间。 半导体沟道层填充第一,第二和第三通孔。
    • 2. 发明申请
    • VERTICAL TRANSISTOR STRUCTURE
    • 垂直晶体管结构
    • US20120161228A1
    • 2012-06-28
    • US13046706
    • 2011-03-12
    • Shou-Cheng WengHuai-An Li
    • Shou-Cheng WengHuai-An Li
    • H01L29/78
    • H01L51/0554H01L29/42392H01L29/78642H01L51/057
    • A vertical transistor structure includes a substrate, a source, a first gate, a first insulating layer, a second gate, a gate insulating layer, a drain, a second insulating layer, and a semiconductor channel layer. The source is configured on the substrate. The first gate is configured on the source and has at least one first through hole. The first insulating layer is between the first gate and the source. The second gate is configured on the first gate and has at least one second through hole. The gate insulating layer is between the first and second gates and has at least one third through hole. The first, second, and third through holes are communicated with one another. The drain is configured on the second gate. The second insulating layer is configured between the second gate and the drain. The semiconductor channel layer fills the first, second, and third through holes.
    • 垂直晶体管结构包括基板,源极,第一栅极,第一绝缘层,第二栅极,栅极绝缘层,漏极,第二绝缘层和半导体沟道层。 源设置在基板上。 第一个栅极配置在源极上,并具有至少一个第一通孔。 第一绝缘层位于第一栅极和源极之间。 第二栅极配置在第一栅极上并且具有至少一个第二通孔。 栅极绝缘层位于第一和第二栅极之间,并具有至少一个第三通孔。 第一,第二和第三通孔彼此连通。 漏极配置在第二个门上。 第二绝缘层配置在第二栅极和漏极之间。 半导体沟道层填充第一,第二和第三通孔。
    • 4. 发明申请
    • FLOURESCENCE MATERIAL AND WHITE LIGHT ILLUMINATION ELEMENT
    • 光学材料和白光照明元件
    • US20120126686A1
    • 2012-05-24
    • US13008909
    • 2011-01-19
    • Chuang-Hung ChiuHuai-An Li
    • Chuang-Hung ChiuHuai-An Li
    • H01J1/62C09K11/77
    • C09K11/7734C09K11/0883C09K11/643H01L33/502H01L33/504Y02B20/181
    • A fluorescence material and a white light illumination element are provided. The white light illumination element includes a light emitting diode (LED) chip, a first fluorescence material, and a second fluorescence material. The LED chip is configured on a substrate and emits an exciting light. The first fluorescence material and the second fluorescence material are configured on the LED chip. A composition of the first fluorescence material includes an aluminum nitride oxide doped with at least one of europium (Eu) and manganese (Mn). A first emitted light emitted by the first fluorescence material after the first fluorescence material absorbs the exciting light emitted from the LED chip and a second emitted light emitted by the second fluorescence material after the second fluorescence material absorbs the exciting light emitted from the LED chip are mixed to generate a white light.
    • 提供荧光材料和白光照明元件。 白光照明元件包括发光二极管(LED)芯片,第一荧光材料和第二荧光材料。 LED芯片配置在基板上并发射激光。 第一荧光材料和第二荧光材料配置在LED芯片上。 第一荧光材料的组成包括掺杂有铕(Eu)和锰(Mn)中的至少一种的氮化铝。 第一荧光材料在第一荧光材料吸收从LED芯片发射的激发光之后,由第一荧光材料发射的第一发射光和在第二荧光材料吸收从LED芯片发射的激发光之后由第二荧光材料发射的第二发射光 混合产生白光。