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1. 发明申请

US20120298508A1 METHOD AND APPARATUS OF ELECTROPHORETIC DEPOSITION 审中-公开
标题翻译：电沉积的方法和装置
公开(公告)号：US20120298508A1
公开(公告)日：2012-11-29
申请号：US13225494
申请日：2011-09-05
申请人： Wen-Ching Shih , Jian-Min Jeng , Yu-Hao Chen , Mei-Tsao Chiang , Huai-An Li
发明人： Wen-Ching Shih , Jian-Min Jeng , Yu-Hao Chen , Mei-Tsao Chiang , Huai-An Li
IPC分类号： C25D13/00
CPC分类号： C25D5/04 , C25D13/00 , C25D13/18
摘要： A method of electrophoretic deposition includes: providing an electrophoresis tank, an anode substrate, and a cathode substrate; disposing the anode substrate and the cathode substrate oppositely in the electrophoresis tank; adjusting relative positions of the cathode substrate and the anode substrate for varying each of the distances between corresponding regions on the cathode substrate and the anode substrate; and inputting cathode voltage and anode voltage respectively to a cathode electrode of the cathode substrate and a anode electrode of the anode substrate for performing the electrophoretic deposition.
摘要翻译：电泳沉积方法包括：提供电泳槽，阳极基底和阴极基底; 将阳极基板和阴极基板相对地放置在电泳槽中; 调整阴极衬底和阳极衬底的相对位置，以改变阴极衬底和阳极衬底上相应区域之间的每个距离; 并将阴极电压和阳极电压分别输入到阴极基板的阴极和用于进行电泳沉积的阳极基板的阳极电极。

2. 发明授权

US5993299A Method and apparatus of uninterrupted slurry supply 有权
标题翻译：不间断泥浆供应的方法和装置
公开(公告)号：US5993299A
公开(公告)日：1999-11-30
申请号：US150948
申请日：1998-09-10
申请人： Yu-Hao Chen , Kwo-An Chiang , Daniel Chiu
发明人： Yu-Hao Chen , Kwo-An Chiang , Daniel Chiu
IPC分类号： B24B37/04 , B24B57/02 , B24B1/00
CPC分类号： B24B37/04 , B24B57/02
摘要： A method and an apparatus of uninterrupted slurry supply. A plurality of polishers are provided. A slurry supply system comprises a slurry supply source, a plurality of valve boxes having a corresponding number as the polishers, a plurality of pipes to connect the valve boxes and the slurry supply source and the valve boxes and the polishers, a plurality of bypasses to connect between an inlet and an outlet of each of the valve boxes, and a plurality elbow type manually controlled three-way valve at a plurality of joints of the pipes and the bypasses. A slurry is supplied from the slurry supply source. A flowing direction of the slurry is selected by adjusting the three-way valve to supply the polishers for polishing.
摘要翻译：一种不间断泥浆供应的方法和装置。提供多个抛光机。浆料供应系统包括浆料供应源，具有相应数量的多个阀箱作为抛光机，连接阀箱和浆料供应源以及阀箱和抛光机的多个管道，多个旁路连接在每个阀箱的入口和出口之间，以及在管道和旁路的多个接头处的多个弯头型手动控制三通阀。从浆料供给源供给浆料。通过调节三通阀来选择浆料的流动方向，以提供用于抛光的抛光机。

3. 发明申请

US20120192650A1 DETECTION SYSTEM AND SIGNAL PROCESSING METHOD THEREOF 审中-公开
标题翻译：检测系统及其信号处理方法
公开(公告)号：US20120192650A1
公开(公告)日：2012-08-02
申请号：US13355476
申请日：2012-01-20
申请人： Ming-Chia Tsai , An-Yeu Wu , Pai-Chi Li , Cheng-Zhou Chan , Yu-Hao Chen
发明人： Ming-Chia Tsai , An-Yeu Wu , Pai-Chi Li , Cheng-Zhou Chan , Yu-Hao Chen
IPC分类号： G01N29/04 , G01N29/44
CPC分类号： G01S7/52047 , G01S15/8915
摘要： A signal processing method is adapted for dealing with a plurality of vector matrixes to detect the image of a predetermined range, and the vector matrix data are generated by reflecting a plurality of ultrasonic beams in the predetermined range. The signal processing method of the present invention is that summing all vector matrix data in a predetermined time interval so as to generate a total correlation matrix. In addition, obtaining a correlation matrix through the total vector matrix multiplied by a transposed total vector matrix, and obtaining a weight value according to inversion correlation matrix. Then, a weighting operation is performed for the vector matrix data in the predetermined time interval according to the weight value, so as to obtain a weighting operation result for performing an image synthesis procedure.
摘要翻译：信号处理方法适于处理多个向量矩阵以检测预定范围的图像，并且通过将多个超声波束反射到预定范围来生成矢量矩阵数据。本发明的信号处理方法是将预定时间间隔内的所有矢量矩阵数据相加，以产生总相关矩阵。另外，通过乘以转置的总矢量矩阵的总矢量矩阵获得相关矩阵，并且根据反相关矩阵获得权重值。然后，根据权重值对预定时间间隔内的向量矩阵数据进行加权操作，以获得用于执行图像合成过程的加权运算结果。

4. 发明授权

US5968610A Multi-step high density plasma chemical vapor deposition process 失效
标题翻译：多级高密度等离子体化学气相沉积工艺
公开(公告)号：US5968610A
公开(公告)日：1999-10-19
申请号：US959407
申请日：1997-10-28
申请人： Chih-Chien Liu , Kuen-Jian Chen , Yu-Hao Chen , J. Y. Wu , Water Lur , Shih-Wei Sun
发明人： Chih-Chien Liu , Kuen-Jian Chen , Yu-Hao Chen , J. Y. Wu , Water Lur , Shih-Wei Sun
IPC分类号： H01L21/316 , H01L21/762 , B05D3/06 , H01L21/76
CPC分类号： H01L21/02112 , H01L21/02274 , H01L21/02304 , H01L21/31612 , H01L21/76224
摘要： A method for depositing dielectric material into gaps between wiring lines in the formation of a semiconductor device includes the deposition of three oxide layers using high density plasma chemical vapor deposition (HDPCVD). A first HDPCVD step is carried out while keeping the substrate unbiased to form an oxide layer over the lines and in the gap. A second HDPCVD step in which the substrate is biased deposits a second oxide layer over the first oxide layer. During the second HDPCVD step some etching occurs and a portion of the first oxide layer is removed. A third HDPCVD step is carried out at a greater etch and sputtering rate than the second step to complete filling of the gap with dielectric material. The first oxide layer acts to protect the underlying structures from etching damage during the third step. Gaps between wiring lines can be filled with dielectric material without forming voids, even for high aspect ratio gaps.
摘要翻译：在形成半导体器件时，将介电材料沉积在布线之间的间隙中的方法包括使用高密度等离子体化学气相沉积（HDPCVD）沉积三个氧化物层。进行第一HDPCVD步骤，同时保持衬底不偏差以在线和间隙中形成氧化物层。衬底被偏置的第二HDPCVD步骤在第一氧化物层上沉积第二氧化物层。在第二HDPCVD步骤期间，发生一些蚀刻，并且去除第一氧化物层的一部分。以比用第二步骤更大的蚀刻和溅射速率进行第三HDPCVD步骤，以完成用电介质材料填充间隙。第一氧化物层用于在第三步骤期间保护下面的结构免受蚀刻损伤。布线之间的间隙可以填充介电材料，而不会形成空隙，即使对于高纵横比的间隙也是如此。

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