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1. 发明授权

US06190937B1 Method of producing semiconductor member and method of producing solar cell 失效
标题翻译：制造半导体元件的方法和太阳能电池的制造方法
公开(公告)号：US06190937B1
公开(公告)日：2001-02-20
申请号：US08999132
申请日：1997-12-29
申请人： Katsumi Nakagawa , Takao Yonehara , Shoji Nishida , Kiyofumi Sakaguchi
发明人： Katsumi Nakagawa , Takao Yonehara , Shoji Nishida , Kiyofumi Sakaguchi
IPC分类号： H01L2176
CPC分类号： H01L21/02032 , C30B19/12 , H01L21/02381 , H01L21/02513 , H01L21/02532 , H01L21/0262 , H01L21/02625 , H01L21/02628 , H01L21/02664 , H01L21/2007 , H01L21/3063 , H01L21/76251 , H01L29/66772 , H01L29/78654 , H01L31/068 , H01L31/0687 , H01L31/1804 , H01L33/0062 , H01L2221/68368 , Y02E10/544 , Y02E10/547 , Y02P70/521 , Y10S438/977
摘要： To accomplish both higher performance of a crystal and lower cost in a semiconductor member, and to produce a solar cell having a high efficiency and a flexible shape at low cost, the semiconductor member is produced by the following steps, (a) forming a porous layer in the surface region of a substrate, (b) immersing the porous layer into a melting solution in which elements for forming a semiconductor layer to be grown is dissolved, under a reducing atmosphere at a high temperature, to grow a crystal semiconductor layer on the surface of the porous layer, (c) bonding another substrate onto the surface of the substrate on which the porous layer and the semiconductor layer are formed and (d) separating the substrate from the another substrate at the porous layer.
摘要翻译：为了在半导体元件中实现更高的晶体性能和更低的成本，并且以低成本生产具有高效率和柔性形状的太阳能电池，通过以下步骤制造半导体部件：（a）形成多孔（b）将多孔层浸渍在其中溶解有用于形成要生长的半导体层的元素的熔融溶液中，在高温还原气氛下，将晶体半导体层生长在多孔层的表面，（c）将另一个衬底粘合到其上形成有多孔层和半导体层的衬底的表面上，以及（d）在多孔层处将衬底与另一衬底分离。

2. 发明授权

US06756289B1 Method of producing semiconductor member and method of producing solar cell 失效
标题翻译：制造半导体元件的方法和太阳能电池的制造方法
公开(公告)号：US06756289B1
公开(公告)日：2004-06-29
申请号：US09638398
申请日：2000-08-15
申请人： Katsumi Nakagawa , Takao Yonehara , Shoji Nishida , Kiyofumi Sakaguchi
发明人： Katsumi Nakagawa , Takao Yonehara , Shoji Nishida , Kiyofumi Sakaguchi
IPC分类号： H01L2146
CPC分类号： H01L21/02032 , C30B19/12 , H01L21/02381 , H01L21/02513 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02625 , H01L21/02628 , H01L21/2007 , H01L21/3063 , H01L21/76251 , H01L29/66772 , H01L29/78654 , H01L31/068 , H01L31/0687 , H01L31/1804 , H01L33/0062 , Y02E10/544 , Y02E10/547 , Y02P70/521 , Y10S438/977
摘要： To accomplish both of higher performance of a crystal and lower cost in a semiconductor member, and to produce a solar cell having a high efficiency and a flexible shape at low cost, the semiconductor member is produced by the following steps, (a) forming a porous layer in the surface region of a substrate, (b) immersing the porous layer into a melting solution in which elements for forming a semiconductor layer to be grown is dissolved, under a reducing atmosphere at a high temperature, to grow a crystal semiconductor layer on the surface of the porous layer, (c) bonding another substrate onto the surface of the substrate on which the porous layer and the semiconductor layer are formed and (d) separating the substrate from the another substrate at the porous layer.
摘要翻译：为了在半导体部件中实现更高的晶体性能和更低的成本，并且以低成本制造具有高效率和柔性形状的太阳能电池，通过以下步骤制造半导体部件，（a）形成（b）在还原性气氛下在高温下将多孔层浸入其中溶解要生长的半导体层形成元素的熔融溶液中，以生长晶体半导体层在多孔层的表面上，（c）将另一个衬底粘合到其上形成有多孔层和半导体层的衬底的表面上，以及（d）在多孔层处将衬底与另一衬底分离。

3. 发明授权

US06211038B1 Semiconductor device, and method for manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06211038B1
公开(公告)日：2001-04-03
申请号：US09047325
申请日：1998-03-25
申请人： Katsumi Nakagawa , Takao Yonehara , Shoji Nishida , Kiyofumi Sakaguchi , Yukiko Iwasaki
发明人： Katsumi Nakagawa , Takao Yonehara , Shoji Nishida , Kiyofumi Sakaguchi , Yukiko Iwasaki
IPC分类号： H01L2176
CPC分类号： H01L21/76259
摘要： A method for manufacturing a thin-film crystalline solar cell includes the steps of (i) forming a porous layer including a large number of fine pores in a surface portion of a crystalline substrate, (ii) transforming a part of the porous layer including the surface thereof into a smooth layer which does not include fine pores by providing the porous layer with excitation energy, and (iii) peeling the smooth layer from the substrate. The excitation energy is provided, for example, by performing heat treatment in a hydrogen atmosphere, irradiating with light having a wavelength equal to or less than 600 nm, or irradiating with an electron beam. It is thereby possible to form a thin-film crystalline semiconductor layer on an inexpensive and flexible substrate by simple processes.
摘要翻译：制造薄膜结晶太阳能电池的方法包括以下步骤：（i）在结晶基材的表面部分形成包含大量细孔的多孔层，（ii）将包含通过向多孔层提供激发能量而将其表面形成不包括细孔的光滑层，以及（iii）从基板剥离光滑层。励磁能量例如通过在氢气氛中进行热处理，用波长等于或小于600nm的光照射或用电子束照射来提供。从而可以通过简单的工艺在便宜且柔性的基板上形成薄膜晶体半导体层。

4. 发明授权

US5492859A Method for producing semiconductor device substrate by bonding a porous layer and an amorphous layer 失效
标题翻译：通过粘合多孔层和非晶层来制造半导体器件基板的方法
公开(公告)号：US5492859A
公开(公告)日：1996-02-20
申请号：US369325
申请日：1995-01-06
申请人： Kiyofumi Sakaguchi , Takao Yonehara , Shoji Nishida
发明人： Kiyofumi Sakaguchi , Takao Yonehara , Shoji Nishida
IPC分类号： H01L21/02 , H01L21/20 , H01L21/306 , H01L21/762 , H01L27/12
CPC分类号： H01L21/2022 , H01L21/30604 , H01L21/76251 , H01L21/76256 , Y10S438/977
摘要： A process for producing a semiconductor device substrate comprises the steps of making a first substrate member porous, forming an insulating layer on a second substrate member, forming an amorphous layer on the insulating layer on the second substrate member, bonding the porous first substrate member to the amorphous layer at a temperature of an atmosphere in which the amorphous layer at least does not crystallize, causing solid-phase epitaxial growth of the amorphous layer by utilizing the porous first substrate member as crystal growth seed, and removing the bonded first substrate member after completion of the epitaxial growth by chemical etching.
摘要翻译：一种制造半导体器件基板的方法包括以下步骤：使第一基板部件多孔，在第二基板部件上形成绝缘层，在第二基板部件上的绝缘层上形成非晶层，将多孔第一基板部件接合到在非晶层至少不结晶的气氛的温度下的非晶层，通过利用多孔第一基板构件作为晶体生长种子，引起非晶层的固相外延生长，以及在第一基板构件之后移除结合的第一基板构件通过化学蚀刻完成外延生长。

5. 发明授权

US5103851A Solar battery and method of manufacturing the same 失效
标题翻译：太阳能电池及其制造方法
公开(公告)号：US5103851A
公开(公告)日：1992-04-14
申请号：US623526
申请日：1990-12-07
申请人： Shoji Nishida , Takao Yonehara
发明人： Shoji Nishida , Takao Yonehara
IPC分类号： H01L31/04 , H01L21/20 , H01L27/142 , H01L31/042 , H01L31/18
CPC分类号： H01L21/0242 , H01L21/02532 , H01L21/02546 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02639 , H01L31/03682 , H01L31/0475 , H01L31/076 , H01L31/1804 , H01L31/1852 , Y02E10/544 , Y02E10/546 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： A solar battery characterized in the following respects of having at least one semiconductor multilayer structure (A) having at least, an electrode (a.sub.1); a semiconductor crystal (a.sub.2) of a first conductivity type formed on the electrode (a.sub.1); and at least one set of laminate layers consisting of a high resistance semiconductor layer (a.sub.3) and a semiconductor layer (a.sub.4) of a second conductivity type and a semiconductor layer (a.sub.5) of the first conductivity type which sequentially formed so as to cover the semiconductor crystal (a.sub.2) of the first conductivity type and at least one semiconductor multilayer structure (B) having at least: an electrode (b.sub.1); a semiconductor crystal (b.sub.2) of the second conductivity type formed on the electrode (b.sub.1); and at least one set of laminate layers consisting of a high resistance semiconductor layer (b.sub.3) and a semiconductor layer (b.sub.4) of the first conductivity type and a semiconductor layer (b.sub.5) of the second conductivity type which are alternately arranged on the same insulative substrate. The semiconductor multilayer structure sections (A) and (B) are alternately electrically connected by high resistance semiconductor layers (C) formed so as to cover the semiconductor multilayer structure sections (A) and (B). The surfaces of the high resistance semiconductor layers (C) form light receiving surfaces.
摘要翻译：一种太阳能电池，其特征在于具有至少一个至少具有电极（a1）的至少一个半导体多层结构（A）形成在电极（a1）上的第一导电类型的半导体晶体（a2）; 以及由高电阻半导体层（a3）和第二导电类型的半导体层（a4）和第一导电类型的半导体层（a5）组成的至少一组层叠层，其顺序地形成为覆盖具有第一导电类型的半导体晶体（a2）和至少一个至少具有电极（b1）的半导体多层结构（B）形成在电极（b1）上的第二导电类型的半导体晶体（b2）; 以及由第一导电类型的高电阻半导体层（b3）和半导体层（b4）和第二导电类型的半导体层（b5）组成的层叠层的至少一组交替地布置在相同的绝缘体基质。半导体多层结构部（A）和（B）通过形成为覆盖半导体多层结构部（A）和（B）的高电阻半导体层（C）交替电连接。高电阻半导体层（C）的表面形成光接收表面。

6. 发明授权

US07077901B2 Process for producing single crystal silicon wafers 失效
标题翻译：制造单晶硅片的工艺
公开(公告)号：US07077901B2
公开(公告)日：2006-07-18
申请号：US10402214
申请日：2003-03-31
申请人： Katsumi Nakagawa , Takao Yonehara , Kazuaki Ohmi , Shoji Nishida
发明人： Katsumi Nakagawa , Takao Yonehara , Kazuaki Ohmi , Shoji Nishida
IPC分类号： C30B19/02
CPC分类号： C30B19/12 , C30B19/02 , C30B29/06
摘要： A process for producing a single crystal silicon wafer, comprising the steps of forming a porous layer on a single crystal silicon substrate comprising a silicon whose concentration of mass number 28 silicon isotope is less than 92.5% on an average; dissolving a starting silicon whose concentration of mass number 28 silicone isotope whose mass number is more than 98% on an average in a melt for liquid-phase epitaxy until said starting silicon becomes to be a supersaturated state in said melt under reductive atmosphere maintained at high temperature: immersing said single crystal silicon substrate in said melt to grow a single crystal silicon layer on the surface of said porous layer of said single crystal silicon substrate; and peeling said single crystal silicon layer from a portion of said porous layer.
摘要翻译：一种制造单晶硅晶片的方法，包括以下步骤：在单晶硅衬底上形成多孔层，该单晶硅衬底包含平均浓度为28％硅同位素的硅的浓度小于92.5％的硅; 将其质量数为28的硅同位素的质量数大于98％的起始硅溶解在用于液相外延的熔体中，直到所述起始硅在所述熔体中在还原气氛保持在高温下变为过饱和状态为止温度：将所述单晶硅衬底浸入所述熔体中以在所述单晶硅衬底的所述多孔层的表面上生长单晶硅层; 以及从所述多孔层的一部分剥离所述单晶硅层。

7. 发明授权

US06534336B1 Production method of photoelectric conversion device, and photoelectric conversion device produced by the method 失效
标题翻译：光电转换装置的生产方法，以及通过该方法生产的光电转换装置
公开(公告)号：US06534336B1
公开(公告)日：2003-03-18
申请号：US09572940
申请日：2000-05-18
申请人： Masaaki Iwane , Takao Yonehara , Shoji Nishida , Kiyofumi Sakaguchi
发明人： Masaaki Iwane , Takao Yonehara , Shoji Nishida , Kiyofumi Sakaguchi
IPC分类号： H01L2100
CPC分类号： H01L31/1892 , H01L31/0236 , H01L31/02363 , H01L31/056 , H01L31/1804 , H01L31/184 , Y02E10/52 , Y02E10/544 , Y02E10/547 , Y02P70/521
摘要： The present invention provides a production method of a photoelectric conversion device, which comprises a step of forming an uneven shape on a surface of a substrate, a step of providing a separation layer maintaining the uneven shape on the substrate, a step of forming a semiconductor film maintaining the uneven shape on the separation layer, and a step of separating the semiconductor film from the substrate at the separation layer, wherein the step of forming the uneven shape on the surface of the substrate is a step of forming the substrate having the uneven shape on the surface by anisotropic etching of the substrate with the separation layer remaining after the separation. The present invention also provides a photoelectric conversion device produced by the above method.
摘要翻译：本发明提供了一种光电转换装置的制造方法，其特征在于，包括在基板的表面上形成不均匀的形状的步骤，在基板上设置保持凹凸形状的分离层的工序，形成半导体在分离层上保持不均匀形状的膜，以及在分离层处分离半导体膜与基板的步骤，其中在基板的表面上形成不均匀形状的步骤是形成具有不平坦的基板的步骤通过分离后残留分离层的基板的各向异性蚀刻在表面上形成。本发明还提供一种通过上述方法制造的光电转换装置。

8. 发明授权

US06391743B1 Method and apparatus for producing photoelectric conversion device 失效
标题翻译：光电转换装置的制造方法及装置
公开(公告)号：US06391743B1
公开(公告)日：2002-05-21
申请号：US09401775
申请日：1999-09-22
申请人： Masaaki Iwane , Takao Yonehara , Kazuaki Ohmi , Shoji Nishida , Kiyofumi Sakaguchi , Kazutaka Yanagita
发明人： Masaaki Iwane , Takao Yonehara , Kazuaki Ohmi , Shoji Nishida , Kiyofumi Sakaguchi , Kazutaka Yanagita
IPC分类号： H01L2130
CPC分类号： H01L31/072 , H01L21/67092 , H01L21/76254 , H01L2221/68363 , Y02E10/50
摘要： There is disclosed a method of producing a photoelectric conversion device comprising the steps of forming a semiconductor substrate comprising a first and a second semiconductor layers with a separation layer therebetween; bonding a support substrate to a surface of the second semiconductor layer opposite to the separation-layer-side surface to form a bonded substrate; separating the first and the second semiconductor layers by the separation layer; and producing a photoelectric conversion device in the second semiconductor layer, wherein when bonding the semiconductor substrate and the support substrate to each other, at least a portion is formed in the bonded substrate in which at least a part of end portions of the semiconductor substrate and the support substrate is not bonded to the other substrate and a fluid is jetted against a side surface of the bonded substrate, thereby separating the first and the second semiconductor layers. The method makes it possible to separate a bonded substrate with a high yield, thereby supplying photoelectric conversion devices with a high quality at a low production cost.
摘要翻译：公开了一种制造光电转换装置的方法，包括以下步骤：形成包括第一和第二半导体层的半导体衬底，其间具有分离层; 将支撑基板接合到与分离层侧表面相对的第二半导体层的表面，以形成键合衬底; 通过分离层分离第一和第二半导体层; 以及在所述第二半导体层中制造光电转换器件，其中当将所述半导体衬底和所述支撑衬底彼此接合时，至少一部分形成在所述键合衬底中，其中所述半导体衬底和所述支撑衬底的至少一部分端部和支撑基板不与另一个基板接合，并且流体相对于键合衬底的侧表面喷射，从而分离第一和第二半导体层。该方法可以以高产率分离粘合的基片，从而以低的生产成本提供高质量的光电转换装置。

9. 发明授权

US06100166A Process for producing semiconductor article 失效
公开(公告)号：US06100166A
公开(公告)日：2000-08-08
申请号：US993034
申请日：1997-12-18
申请人： Kiyofumi Sakaguchi , Takao Yonehara , Shoji Nishida , Kenji Yamagata
发明人： Kiyofumi Sakaguchi , Takao Yonehara , Shoji Nishida , Kenji Yamagata
IPC分类号： B28D5/00 , G02F1/1362 , H01L21/18 , H01L21/20 , H01L21/304 , H01L21/66 , H01L31/068 , H01L31/18 , H01L21/30 , H01L21/46
CPC分类号： H01L21/76259 , B28D5/00 , H01L21/187 , H01L21/2007 , H01L21/304 , H01L21/76254 , H01L22/00 , H01L31/068 , H01L31/1804 , H01L31/1892 , G02F1/136277 , H01L2221/68363 , H01L2221/68368 , H01L2924/0002 , Y02E10/547 , Y02P70/521
摘要： A process for producing a semiconductor article is provided which comprises the steps of bonding a film onto a substrate having a porous semiconductor layer, and separating the film from the substrate at the porous semiconductor layer by applying a force to the film in a peeling direction.

10. 发明授权

US5403771A Process for producing a solar cell by means of epitaxial growth process 失效
标题翻译：通过外延生长工艺生产太阳能电池的方法
公开(公告)号：US5403771A
公开(公告)日：1995-04-04
申请号：US190584
申请日：1994-02-02
申请人： Shoji Nishida , Takao Yonehara
发明人： Shoji Nishida , Takao Yonehara
IPC分类号： H01L31/0368 , H01L31/0392 , H01L31/0745 , H01L31/077 , H01L31/18 , H01L21/20 , H01L21/3205
CPC分类号： H01L31/0745 , H01L31/03682 , H01L31/03921 , H01L31/077 , H01L31/1804 , Y02E10/546 , Y02E10/547 , Y02P70/521
摘要： A process for effectively producing an inexpensive solar cell by using a metallic substrate and growing a polycrystal semiconductor layer of a large crystal grain size. And a process for effectively producing a high quality and inexpensive solar cell by forming a polycrystal semiconductor layer of a large crystal grain size and with a reduced defect level density in grain boundaries on a polycrystal semiconductor layer of a small crystal grain size which serves as a crystal seed.
摘要翻译：一种通过使用金属基板有效地生产廉价太阳能电池并生长大晶粒尺寸的多晶半导体层的方法。以及通过在小晶粒尺寸的多晶半导体层上形成大晶粒尺寸的多晶半导体层和晶粒边界的缺陷水平密度降低来有效地生产高质量和廉价的太阳能电池的方法，其作为晶种。

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