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1. 发明授权

US06100166A Process for producing semiconductor article 失效
公开(公告)号：US06100166A
公开(公告)日：2000-08-08
申请号：US993034
申请日：1997-12-18
申请人： Kiyofumi Sakaguchi , Takao Yonehara , Shoji Nishida , Kenji Yamagata
发明人： Kiyofumi Sakaguchi , Takao Yonehara , Shoji Nishida , Kenji Yamagata
IPC分类号： B28D5/00 , G02F1/1362 , H01L21/18 , H01L21/20 , H01L21/304 , H01L21/66 , H01L31/068 , H01L31/18 , H01L21/30 , H01L21/46
CPC分类号： H01L21/76259 , B28D5/00 , H01L21/187 , H01L21/2007 , H01L21/304 , H01L21/76254 , H01L22/00 , H01L31/068 , H01L31/1804 , H01L31/1892 , G02F1/136277 , H01L2221/68363 , H01L2221/68368 , H01L2924/0002 , Y02E10/547 , Y02P70/521
摘要： A process for producing a semiconductor article is provided which comprises the steps of bonding a film onto a substrate having a porous semiconductor layer, and separating the film from the substrate at the porous semiconductor layer by applying a force to the film in a peeling direction.

2. 发明授权

US06534382B1 Process for producing semiconductor article 有权
标题翻译：半导体制品的制造方法
公开(公告)号：US06534382B1
公开(公告)日：2003-03-18
申请号：US09634542
申请日：2000-08-08
申请人： Kiyofumi Sakaguchi , Takao Yonehara , Shoji Nishida , Kenji Yamagata
发明人： Kiyofumi Sakaguchi , Takao Yonehara , Shoji Nishida , Kenji Yamagata
IPC分类号： H01L2130
CPC分类号： H01L21/76259 , B28D5/00 , G02F1/136277 , H01L21/187 , H01L21/2007 , H01L21/304 , H01L21/76254 , H01L22/00 , H01L31/068 , H01L31/1804 , H01L31/1892 , H01L2221/68363 , H01L2221/68368 , H01L2924/0002 , Y02E10/547 , Y02P70/521 , H01L2924/00
摘要： A process for producing a semiconductor article is provided which comprises the steps of bonding a film onto a substrate having a porous semiconductor layer, and separating the film from the substrate at the porous semiconductor layer by applying a force to the film in a peeling direction.
摘要翻译：提供一种半导体制品的制造方法，其包括以下步骤：将膜粘合到具有多孔半导体层的基板上，并通过在剥离方向上对膜施加力而在多孔半导体层处将膜与基板分离。

3. 发明授权

US6156624A Method for production of SOI substrate by pasting and SOI substrate 失效
标题翻译：通过粘贴和SOI衬底生产SOI衬底的方法
公开(公告)号：US6156624A
公开(公告)日：2000-12-05
申请号：US832859
申请日：1997-04-04
申请人： Kenji Yamagata , Takao Yonehara , Tadashi Atoji , Kiyofumi Sakaguchi
发明人： Kenji Yamagata , Takao Yonehara , Tadashi Atoji , Kiyofumi Sakaguchi
IPC分类号： H01L21/02 , H01L21/20 , H01L21/336 , H01L21/762 , H01L27/12 , H01L29/786 , H01L21/306
CPC分类号： H01L21/2007 , H01L21/76251 , Y10S438/977
摘要： This invention solves the problem of a pasted SOI substrate generating voids in the peripheral part thereof and consequently decreasing the number of devices to be derived therefrom. It concerns a method for the production of a SOI substrate obtained by pasting a first Si substrate possessing a SiO.sub.2 surface and a second substrate possessing a Si surface on the SiO.sub.2 surface and the Si surface, which method comprises washing the Si surface of the second Si substrate, thereby imparting hydrophobicity to the Si surface before the first Si substrate and the second Si substrate are pasted together.
摘要翻译：本发明解决了在其周边部分产生空隙的粘贴SOI衬底的问题，从而减少了从其导出的器件的数量。本发明涉及制备通过在SiO 2表面和Si表面上粘贴具有SiO 2表面的第一Si衬底和具有Si表面的第二衬底而获得的SOI衬底的方法，该方法包括：将第二Si的Si表面从而在将第一Si衬底和第二Si衬底粘贴在一起之前对Si表面赋予疏水性。

4. 发明授权

US06103598A Process for producing semiconductor substrate 失效
标题翻译：半导体衬底的制造方法
公开(公告)号：US06103598A
公开(公告)日：2000-08-15
申请号：US678694
申请日：1996-07-11
申请人： Kenji Yamagata , Takao Yonehara , Nobuhiko Sato , Kiyofumi Sakaguchi
发明人： Kenji Yamagata , Takao Yonehara , Nobuhiko Sato , Kiyofumi Sakaguchi
IPC分类号： H01L21/306 , H01L21/762
CPC分类号： H01L21/76256 , H01L21/0203 , H01L21/76243
摘要： A process for producing a semiconductor substrate is provided which comprises providing a first substrate made of silicon having a porous silicon layer formed thereon by making porous the substrate silicon and a nonporous monocrystalline silicon layer epitaxially grown on the porous silicon layer, laminating the first substrate onto a second substrate in a state that at least one of lamination faces of the first and the second substrates has a silicon oxide layer and the nonporous monocrystalline silicon layer is interposed between the laminated substrates, and removing the porous silicon layer by etching, wherein the porous silicon layer is removed by etching with an etchant which etches the nonporous monocrystalline silicon layer and the silicon oxide layer at respective etching rates of not more than 10 angstroms per minute.
摘要翻译：提供一种制造半导体衬底的方法，其包括：通过使衬底硅多孔化和多孔硅层上外延生长的无孔单晶硅层，提供由其上形成有多孔硅层的硅制成的第一衬底，将第一衬底层压到第二基板，其中第一和第二基板的至少一个层叠面具有氧化硅层，并且无孔单晶硅层插入在层压基板之间，并且通过蚀刻去除多孔硅层，其中多孔通过蚀刻除去硅层，蚀刻剂以不大于10埃每分钟的蚀刻速率蚀刻无孔单晶硅层和氧化硅层。

5. 发明授权

US5466631A Method for producing semiconductor articles 失效
标题翻译：半导体制品的制造方法
公开(公告)号：US5466631A
公开(公告)日：1995-11-14
申请号：US392685
申请日：1995-02-23
申请人： Takeshi Ichikawa , Takao Yonehara , Masaru Sakamoto , Yasuhiro Naruse , Jun Nakayama , Kenji Yamagata , Kiyofumi Sakaguchi
发明人： Takeshi Ichikawa , Takao Yonehara , Masaru Sakamoto , Yasuhiro Naruse , Jun Nakayama , Kenji Yamagata , Kiyofumi Sakaguchi
IPC分类号： H01L21/02 , H01L21/304 , H01L21/306 , H01L21/762 , H01L27/12 , H01L21/76
CPC分类号： H01L21/76264 , H01L21/30604 , H01L21/76256 , H01L21/76275 , H01L21/76283 , H01L21/76289 , Y10S148/012 , Y10S438/96 , Y10S438/977
摘要： A method for producing a semiconductor article comprises the steps of preparing a first substrate having a non-porous semiconductor layer on a porous semiconductor region, forming unevenness on the surface at the side of said semiconductor layer of said first substrate; bonding the surface of said first substrate having said unevenness formed thereon to the surface of said second substrate so as to be in contact with each other, and removing said porous semiconductor under the state that said semiconductor layer is bonded to said second substrate to thereby transfer said semiconductor layer from said first substrate onto said second substrate.
摘要翻译：一种制造半导体产品的方法包括以下步骤：在多孔半导体区域上制备具有无孔半导体层的第一衬底，在所述第一衬底的所述半导体层侧的表面上形成凹凸; 将形成有所述凹凸的所述第一基板的表面接合到所述第二基板的表面以彼此接触，并且在所述半导体层接合到所述第二基板的状态下去除所述多孔半导体，从而转移所述半导体层从所述第一衬底到所述第二衬底上。

6. 发明授权

US06706618B2 Substrate processing apparatus, substrate support apparatus, substrate processing method, and substrate fabrication method 失效
标题翻译：基板处理装置，基板支撑装置，基板处理方法以及基板的制造方法
公开(公告)号：US06706618B2
公开(公告)日：2004-03-16
申请号：US10206214
申请日：2002-07-29
申请人： Toru Takisawa , Takao Yonehara , Kenji Yamagata
发明人： Toru Takisawa , Takao Yonehara , Kenji Yamagata
IPC分类号： H01L2176
CPC分类号： H01L21/67092 , H01L21/2007
摘要： The spaces in chuck grooves 3a and 3b are evacuated to chuck the entire surface of a wafer 1 to the chuck surface of a wafer support table 3 and curve the wafer 1. A wafer 2 is horizontally opposed to the wafer 1, and the center of the wafer 2 is pressed by a press pin 6a. The centers of the two wafers 1 and 2 are contacted, and the contact portion gradually spreads to the vicinity of the periphery of a central portion 3c and takes a substantially circular shape. After that, the chuck by the chuck grooves 3a is stopped. Consequently, the wafer 1 flattens, and the entire surfaces of the wafers 1 and 2 are contacted.
摘要翻译：吸盘槽3a和3b中的空间被抽真空以将晶片1的整个表面吸附到晶片支撑台3的卡盘表面并使晶片1弯曲。晶片2与晶片1水平相对，晶片2被压销6a按压。两个晶片1和2的中心接触，并且接触部分逐渐扩展到中心部分3c的周边附近并呈现大致圆形。之后，由卡盘槽3a卡住停止。因此，晶片1变平，晶片1和2的整个表面接触。

7. 发明授权

US06200878B1 SOI substrate processing method 有权
标题翻译： SOI衬底处理方法
公开(公告)号：US06200878B1
公开(公告)日：2001-03-13
申请号：US09211570
申请日：1998-12-15
申请人： Kenji Yamagata , Kiyofumi Sakaguchi
发明人： Kenji Yamagata , Kiyofumi Sakaguchi
IPC分类号： H01L21306
CPC分类号： H01L21/0203 , C25D11/32 , H01L21/2007 , H01L21/76259 , Y10S438/96 , Y10S438/977
摘要： An object of this invention is to provide a substrate processing method capable of satisfactorily performing in etching in the step of removing a porous silicon layer by etching. In order to achieve this object, a substrate processing method includes the anodizing step of forming a porous silicon layer on a major surface of a single-crystal silicon substrate, the silicon film formation step of growing a single-crystal silicon film on the porous silicon layer, the removal step of bonding a first substrate obtained by oxidizing a surface of the single-crystal silicon film to a second substrate as a supporting substrate, and removing a single-crystal silicon portion from a lower surface side of the first substrate to expose the porous silicon layer, and the etching step of etching the exposed porous silicon layer to remove the porous silicon layer on the single-crystal silicon film, wherein in washing after the anodizing step, a time in which the first substrate is removed from the electrolytic solution and exposed to the air until washing is limited to a range in which the porous silicon layer is prevented from remaining on the single-crystal silicon film in the etching step.
摘要翻译：本发明的目的是提供一种在通过蚀刻去除多孔硅层的步骤中能够令人满意地进行蚀刻的基板处理方法。为了实现该目的，基板处理方法包括在单晶硅基板的主表面上形成多孔硅层的阳极氧化步骤，在多孔硅上生长单晶硅膜的硅膜形成步骤层，将通过将单晶硅膜的表面氧化的第一基板接合到作为支撑基板的第二基板的去除步骤，以及从第一基板的下表面侧去除单晶硅部分以暴露多孔硅层，以及蚀刻暴露的多孔硅层以除去单晶硅膜上的多孔硅层的蚀刻步骤，其中在阳极氧化步骤之后的洗涤中，将第一基底从电解液中除去的时间溶液并暴露于空气中，直到洗涤被限制在其中防止多孔硅层残留在单晶硅膜上的范围内蚀刻步骤。

8. 发明授权

US06428620B1 Substrate processing method and apparatus and SOI substrate 有权
标题翻译：基板加工方法及装置及SOI基板
公开(公告)号：US06428620B1
公开(公告)日：2002-08-06
申请号：US09680376
申请日：2000-10-05
申请人： Kenji Yamagata , Kiyofumi Sakaguchi
发明人： Kenji Yamagata , Kiyofumi Sakaguchi
IPC分类号： C30B2516
CPC分类号： H01L21/0203 , C25D11/32 , H01L21/2007 , H01L21/76259 , Y10S438/96 , Y10S438/977
摘要： An object of this invention is to provide a substrate processing method capable of satisfactorily performing in etching in the step of removing a porous silicon layer by etching. In order to achieve this object, a substrate processing method includes the anodizing step of forming a porous silicon layer on a major surface of a single-crystal silicon substrate, the silicon film formation step of growing a single-crystal silicon film on the porous silicon layer, the removal step of bonding a first substrate obtained by oxidizing a surface of the single-crystal silicon film to a second substrate as a supporting substrate, and removing a single-crystal silicon portion from a lower surface side of the first substrate to expose the porous silicon layer, and the etching step of etching the exposed porous silicon layer to remove the porous silicon layer on the single-crystal silicon film, wherein in washing after the anodizing step, a time in which the first substrate is removed from the electrolytic solution and exposed to the air until washing is limited to a range in which the porous silicon layer is prevented from remaining on the single-crystal silicon film in the etching step.
摘要翻译：本发明的目的是提供一种在通过蚀刻去除多孔硅层的步骤中能够令人满意地进行蚀刻的基板处理方法。为了实现该目的，基板处理方法包括在单晶硅基板的主表面上形成多孔硅层的阳极氧化步骤，在多孔硅上生长单晶硅膜的硅膜形成步骤层，将通过将单晶硅膜的表面氧化的第一基板接合到作为支撑基板的第二基板的去除步骤，以及从第一基板的下表面侧去除单晶硅部分，以暴露多孔硅层，以及蚀刻暴露的多孔硅层以去除单晶硅膜上的多孔硅层的蚀刻步骤，其中在阳极氧化步骤之后的洗涤中，将第一基底从电解液中除去的时间溶液并暴露于空气中，直到洗涤被限制在其中防止多孔硅层残留在单晶硅膜上的范围内蚀刻步骤。

9. 发明授权

US06417069B1 Substrate processing method and manufacturing method, and anodizing apparatus 有权
标题翻译：基板加工方法和制造方法以及阳极氧化装置
公开(公告)号：US06417069B1
公开(公告)日：2002-07-09
申请号：US09532071
申请日：2000-03-21
申请人： Kiyofumi Sakaguchi , Satoshi Matsumura , Kenji Yamagata
发明人： Kiyofumi Sakaguchi , Satoshi Matsumura , Kenji Yamagata
IPC分类号： H01L2176
CPC分类号： H01L21/76259
摘要： A porous layer is formed on an Si substrate using an anodizing apparatus having a conductive partition inserted between a cathode and an anode. First, the cathode and Si substrate are brought into electrical contact through a first electrolyte, and the conductive partition and Si substrate are brought into electrical contact through a second electrolyte. A current is flowed between the cathode and the anode to form a porous layer on the Si substrate. As the first electrolyte, an electrolyte capable of forming a porous structure on the Si substrate is used. As the second electrolyte, an electrolyte substantially incapable of forming a porous structure on the conductive partition is used.
摘要翻译：使用具有插入在阴极和阳极之间的导电隔板的阳极氧化装置在Si衬底上形成多孔层。首先，阴极和Si衬底通过第一电解质进行电接触，并且导电隔板和Si衬底通过第二电解质进行电接触。电流在阴极和阳极之间流动以在Si衬底上形成多孔层。作为第一电解质，使用能够在Si衬底上形成多孔结构的电解质。作为第二电解质，使用基本上不能在导电隔板上形成多孔结构的电解质。

10. 发明授权

US07550305B2 Method of forming light-emitting element 失效
标题翻译：形成发光元件的方法
公开(公告)号：US07550305B2
公开(公告)日：2009-06-23
申请号：US11874452
申请日：2007-10-18
申请人： Kenji Yamagata , Takao Yonehara , Yoshinobu Sekiguchi , Kojiro Nishi
发明人： Kenji Yamagata , Takao Yonehara , Yoshinobu Sekiguchi , Kojiro Nishi
IPC分类号： H01L21/00 , H01L21/30 , H01L21/46
CPC分类号： H01L33/0079 , H01L33/08 , H01L33/20
摘要： An object of the present invention is to provide a method of forming a light-emitting element at a lower cost than a conventional cost with suppressing the deterioration of the substrate due to thermal distortion in comparison with a conventional method of recycling a substrate and further having an effect equal to that of the method of recycling a substrate. The method of forming a light-emitting element by growing a separation layer and a light-emitting layer in this order on a first substrate, bonding the light-emitting layer onto a second substrate, and removing the separation layer to form the light-emitting layer on the second substrate, includes growing a plurality of groups each containing the separation layer and light-emitting layer on the first substrate; patterning the light-emitting layer existing as a uppermost layer into an island shape, and then bonding the light-emitting layer onto the second substrate, and etching the separation layer adjacent to the light-emitting layer patterned into the island shape to form the light-emitting layer patterned into the island shape on the second substrate.
摘要翻译：本发明的目的是提供一种以比常规成本低的成本形成发光元件的方法，与常规的基板再循环方法相比，可以抑制由于热变形引起的基板的劣化，并且还具有其效果与回收基材的方法相同。通过在第一基板上依次生长分离层和发光层来形成发光元件的方法，将发光层接合到第二基板上，并且去除分离层以形成发光包括在第一基板上生长各自包含分离层和发光层的多个基团; 将作为最上层存在的发光层图案化为岛状，然后将发光层接合到第二基板上，并且蚀刻与图案化为岛状的发光层相邻的分离层，以形成光在第二基板上图案化成岛状的发光层。

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