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1. 发明授权

US06252651B1 Exposure method and exposure apparatus using it 失效
标题翻译：使用曝光方法和曝光装置
公开(公告)号：US06252651B1
公开(公告)日：2001-06-26
申请号：US09437259
申请日：1999-11-10
申请人： Tadahito Fujisawa , Satoshi Tanaka , Akiko Mimotogi , Shoji Mimotogi , Soichi Inoue
发明人： Tadahito Fujisawa , Satoshi Tanaka , Akiko Mimotogi , Shoji Mimotogi , Soichi Inoue
IPC分类号： G03B2742
CPC分类号： G03F7/70058 , G03F1/26 , G03F7/70425 , H01L21/28123 , H01L21/76816
摘要： An exposure method includes the phase-shifting mask supply step, the phase-shifting mask being prepared by selectively forming a light-shielding portion and a phase shifter on a substrate, and the resist exposure step of performing both exposure of a resist by dark field illumination light and exposure of the resist by bright field illumination light by using the phase-shifting mask, thereby removing residual resist generated by the influence of the edge of the phase shifter.
摘要翻译：曝光方法包括相移掩模提供步骤，通过在基板上选择性地形成遮光部分和移相器来制备相移掩模，以及抗蚀剂曝光步骤，通过暗场曝光抗蚀剂通过使用移相掩模通过亮场照明光照射光和抗蚀剂曝光，从而去除由移相器的边缘的影响产生的残留抗蚀剂。

2. 发明授权

US6107013A Exposure method and exposure apparatus using it 失效
标题翻译：使用曝光方法和曝光装置
公开(公告)号：US6107013A
公开(公告)日：2000-08-22
申请号：US990097
申请日：1997-12-12
申请人： Tadahito Fujisawa , Satoshi Tanaka , Akiko Mimotogi , Shoji Mimotogi , Soichi Inoue
发明人： Tadahito Fujisawa , Satoshi Tanaka , Akiko Mimotogi , Shoji Mimotogi , Soichi Inoue
IPC分类号： G03F1/34 , G03F1/68 , G03F7/20 , H01L21/027 , H01L21/28 , H01L21/768
CPC分类号： G03F7/70058 , G03F7/70425 , H01L21/28123 , G03F1/26 , H01L21/76816
摘要： An exposure method includes the phase-shifting mask supply step, the phase-shifting mask being prepared by selectively forming a light-shielding portion and a phase shifter on a substrate, and the resist exposure step of performing both exposure of a resist by dark field illumination light and exposure of the resist by bright field illumination light by using the phase-shifting mask, thereby removing residual resist generated by the influence of the edge of the phase shifter.
摘要翻译：曝光方法包括相移掩模提供步骤，通过在基板上选择性地形成遮光部分和移相器来制备相移掩模，以及抗蚀剂曝光步骤，通过暗场曝光抗蚀剂通过使用移相掩模通过亮场照明光照射光和抗蚀剂曝光，从而去除由移相器的边缘的影响产生的残留抗蚀剂。

3. 发明授权

US5733687A Photomask, exposing method using photomask, and manufacturing method of photomask 失效
标题翻译：光掩模，使用光掩模的曝光方法和光掩模的制造方法
公开(公告)号：US5733687A
公开(公告)日：1998-03-31
申请号：US536148
申请日：1995-09-29
申请人： Satoshi Tanaka , Shoji Mimotogi , Tadahito Fujisawa , Soichi Inoue
发明人： Satoshi Tanaka , Shoji Mimotogi , Tadahito Fujisawa , Soichi Inoue
IPC分类号： G03B27/54 , G03F1/32 , G03F1/68 , G03F7/20 , H01L21/027 , G03F9/00
CPC分类号： G03F1/32 , G03F1/26 , G03F7/701 , G03F7/70125 , G03F7/70283 , G03F7/70358
摘要： When a pattern to be exposed onto a wafer is a periodic pattern, a periodic mask pattern substantially twice as large as the pattern to be exposed in the wafer is formed on a photomask by means of light transmission portions and halftone portions. The halftone portions are formed such that a phase difference between exposure light transmitted through the light transmission portions and exposure light transmitted through the halftone portions is set to be substantially 180.degree.. Moreover, in order to eliminate zeroth order diffraction light, amplitude transmittance t of the halftone portion is set to t.apprxeq.A1/A2 wherein A1 is an area of the halftone portion and A2 is an area of the light transmission portion. Further, amplitude transmittance t of the halftone portion is changed, and an amount of exposure light to the photomask is controlled, so that L&S patterns and isolated patterns are simultaneously transferred onto the wafer by one photomask.
摘要翻译：当暴露在晶片上的图案是周期性图案时，通过透光部分和半色调部分在光掩模上形成基本上是待曝光晶片的图案的两倍的周期性掩模图案。半色调部分被形成为使得透过透光部分的曝光光与透过半色调部分的曝光之间的相位差被设定为大致180度。此外，为了消除零级衍射光，将半色调部分的振幅透射率t设定为t APPROX A1 / A2，其中A1是半色调部分的面积，A2是光透射部分的面积。此外，改变半色调部分的振幅透射率t，并且控制对光掩模的曝光量，使得L＆S图案和隔离图案通过一个光掩模同时转印到晶片上。

4. 发明授权

US5673103A Exposure apparatus and method 失效
标题翻译：曝光装置和方法
公开(公告)号：US5673103A
公开(公告)日：1997-09-30
申请号：US703530
申请日：1996-08-23
申请人： Soichi Inoue , Satoshi Tanaka , Tadahito Fujisawa
发明人： Soichi Inoue , Satoshi Tanaka , Tadahito Fujisawa
IPC分类号： G03F7/20 , G02B21/14
CPC分类号： G03F7/70058 , G03F7/70075 , G03F7/70125 , G03F7/70241 , G03F7/7025 , G03F7/70425 , G03F7/70566
摘要： An exposure apparatus for reducing/projecting a plurality of patterns of a photomask, which are elongated in at least two different directions, onto a substrate through the photomask includes a polarized light source for illuminating the photomask, a polarization control unit for changing the direction of polarization of polarized light from the polarized light source, a slit filter arranged at a position where the polarized light is focused and having a slit-like opening portion elongated in a direction perpendicular to the direction of polarization of the polarized light, the slit filter transmitting polarized light, of the polarized light passing through the photomask, which has the direction of polarization, a unit for changing the direction of the opening portion of the slit filter in synchronism with a change in direction of polarization of polarized light which is made by the polarization control unit, and a unit for illuminating the photomask with the polarized light at each position where the direction of the pattern becomes parallel to the direction of polarization of the polarized light, thereby exposing a pattern, formed on the photomask, onto the substrate at the angle of a direction of polarization perpendicular to an incident plane of light incident on the substrate.
摘要翻译：用于将通过光掩模在至少两个不同方向上延伸的光掩模的多个图案减少/投影到基板上的曝光装置包括用于照射光掩模的偏振光源，用于改变光掩模的方向的偏振控制单元偏振光从偏振光源的偏振光;狭缝滤光器，其设置在偏振光聚焦的位置处，并且具有在与偏振光的偏振方向垂直的方向上延伸的狭缝状开口部，狭缝滤光器透射通过具有偏振方向的光掩模的偏振光的偏振光与由偏振光的偏振光的偏振方向的变化同步地改变狭缝滤光片的开口部的方向的单元偏光控制单元，以及用于在每个po处以偏振光照射光掩模的单元其中图案的方向变得与偏振光的偏振方向平行，从而将形成在光掩模上的图案以垂直于入射到该光源的光的入射平面的偏振方向的角度暴露在基板上基质。

5. 发明授权

US06317198B1 Method of examining an exposure tool 失效
标题翻译：检查曝光工具的方法
公开(公告)号：US06317198B1
公开(公告)日：2001-11-13
申请号：US09345758
申请日：1999-07-01
申请人： Kazuya Sato , Satoshi Tanaka , Tadahito Fujisawa , Soichi Inoue
发明人： Kazuya Sato , Satoshi Tanaka , Tadahito Fujisawa , Soichi Inoue
IPC分类号： G03B2732
CPC分类号： G03F7/706
摘要： In a method of examining the shape of the light source of an exposure tool, the shape of the pupil of its projection optical system, and the alignment of the shape of the light source with the shape of the pupil, the exposure tool comprising a light source, an illumination optical system for directing the light emitted from the light source to a reticle, and a projection optical system for transferring the reduced image on the reticle onto a wafer, the light emitted from the light source is projected on a reticle including a grating pattern where a transmitting area and a shading area are repeated in a finite number, the diffracted light of the first order or higher passed through the reticle is caused to illuminate the outer edge of the pupil of the projection optical system, and the pattern image on the reticle is projected on the wafer in the defocus state.
摘要翻译：在检查曝光工具的光源的形状，其投影光学系统的光瞳的形状以及光源的形状与瞳孔的形状的对准的方法中，曝光工具包括光光源，用于将从光源发射的光引导到掩模版的照明光学系统，以及用于将掩模版上的还原图像转印到晶片上的投影光学系统，从光源发射的光被投射在包括以有限数量重复发送区域和阴影区域的光栅图案，使通过标线的一级以上的衍射光照射投影光学系统的光瞳的外缘，并且图案图像在散焦状态下，在掩模版上投影在晶片上。

6. 发明申请

US20070259280A1 Photomask, exposure control method and method of manufacturing a semiconductor device 失效
标题翻译：光掩模，曝光控制方法和制造半导体器件的方法
公开(公告)号：US20070259280A1
公开(公告)日：2007-11-08
申请号：US11819375
申请日：2007-06-27
申请人： Tadahito Fujisawa , Soichi Inoue , Satoshi Tanaka , Masafumi Asano
发明人： Tadahito Fujisawa , Soichi Inoue , Satoshi Tanaka , Masafumi Asano
IPC分类号： G03F7/20 , G03F1/00 , G03C5/00 , G03F7/40 , G03F7/38
CPC分类号： G03F1/44
摘要： A photomask transferring a light shield film pattern formed on a transparent substrate by a projection exposure apparatus, comprising a circuit pattern for transferring a predetermined pattern to a resist film, and an exposure monitor mark, the exposure monitor mark being formed in a manner that blocks having a predetermined width p, which are not resolved by the projection exposure apparatus, are intermittently or continuously arrayed along one direction, light shield and transmission portions are arrayed along one direction in each of the blocks, the blocks are arrayed so that a dimension ratio of the light shield and transmission portions of the blocks simply changes and the phase difference of exposure light passing through adjacent light transmission portions is approximately 180°.
摘要翻译：一种光掩模，其通过投影曝光装置将形成在透明基板上的遮光膜图案转印，所述投影曝光装置包括用于将预定图案转印到抗蚀剂膜的电路图案，以及曝光监视标记，所述曝光监视标记以块具有未被投影曝光装置解析的预定宽度p沿着一个方向间歇地或连续地排列，在每个块中沿着一个方向排列有光屏蔽和透射部分，块被排列成使得尺寸比的光屏蔽和透射部分简单地改变，并且穿过相邻光传输部分的曝光光的相位差大约为180°。

7. 发明申请

US20050030502A1 Photomask, exposure control method and method of manufacturing a semiconductor device 审中-公开
标题翻译：光掩模，曝光控制方法和制造半导体器件的方法
公开(公告)号：US20050030502A1
公开(公告)日：2005-02-10
申请号：US10874192
申请日：2004-06-24
申请人： Tadahito Fujisawa , Soichi Inoue , Satoshi Tanaka , Masafumi Asano
发明人： Tadahito Fujisawa , Soichi Inoue , Satoshi Tanaka , Masafumi Asano
IPC分类号： G03B27/42 , G03F1/26 , G03F1/38 , G03F1/44 , G03F1/68 , G03F1/70 , G03F7/20 , H01L21/027 , H01L21/3205 , H01L21/768 , H01L23/52 , H01L23/522
CPC分类号： G03F1/44
摘要： A photomask transferring a light shield film pattern formed on a transparent substrate by a projection exposure apparatus, comprising a circuit pattern for transferring a predetermined pattern to a resist film, and an exposure monitor mark, the exposure monitor mark being formed in a manner that blocks having a predetermined width p, which are not resolved by the projection exposure apparatus, are intermittently or continuously arrayed along one direction, light shield and transmission portions are arrayed along one direction in each of the blocks, the blocks are arrayed so that a dimension ratio of the light shield and transmission portions of the blocks simply changes and the phase difference of exposure light passing through adjacent light transmission portions is approximately 180°.
摘要翻译：一种光掩模，其通过投影曝光装置将形成在透明基板上的遮光膜图案转印，所述投影曝光装置包括用于将预定图案转印到抗蚀剂膜的电路图案，以及曝光监视标记，所述曝光监视标记以块具有未被投影曝光装置解析的预定宽度p沿着一个方向间歇地或连续地排列，在每个块中沿着一个方向排列有光屏蔽和透射部分，块被排列成使得尺寸比的光屏蔽和透射部分简单地改变，并且穿过相邻光传输部分的曝光光的相位差大约为180°。

8. 发明授权

US07396621B2 Exposure control method and method of manufacturing a semiconductor device 失效
标题翻译：曝光控制方法及制造半导体器件的方法
公开(公告)号：US07396621B2
公开(公告)日：2008-07-08
申请号：US11819375
申请日：2007-06-27
申请人： Tadahito Fujisawa , Soichi Inoue , Satoshi Tanaka , Masafumi Asano
发明人： Tadahito Fujisawa , Soichi Inoue , Satoshi Tanaka , Masafumi Asano
IPC分类号： G03F7/16 , G03F7/20 , G03F7/38 , G03F1/14
CPC分类号： G03F1/44
摘要： A method of manufacturing a semiconductor device includes preparing a projection exposure apparatus and a photomask, the photomask having a transparent substrate and a light shield film arranged in patterns to be transferred to a resist film on a wafer. The patterns include a circuit mask pattern, and first and second mark mask patterns having dimensions which change in accordance with exposure of the resist film. The method further includes forming first and second exposure monitor marks by causing phasing differences of 180 degrees and zero degrees, respectively, of light passing through the corresponding first and second mark mask patterns; measuring the first and second exposure monitor marks; calculating first and second effective exposures based on measured dimensions of the first and second exposure monitor marks; comparing variations of the first and second effective exposures; and changing at least one of a deposit condition of a front-end film formed under the resist film or a resist film coating condition if a variation of the first effective exposure differs from a variation of the second effective exposure.
摘要翻译：制造半导体器件的方法包括制备投影曝光设备和光掩模，所述光掩模具有透明基板和以图案排列的光屏蔽膜，以转印到晶片上的抗蚀剂膜。图案包括电路掩模图案，以及具有根据抗蚀剂膜的曝光而变化的尺寸的第一和第二标记掩模图案。该方法还包括通过分别通过相应的第一和第二标记掩模图案的光180度和零度的相位差来形成第一和第二曝光监视标记; 测量第一和第二曝光监视标记; 基于第一和第二曝光监视标记的测量尺寸来计算第一和第二有效曝光; 比较第一和第二有效曝光的变化; 以及如果第一有效曝光的变化与第二有效曝光的变化不同，则改变形成在抗蚀剂膜下方的前端膜的沉积条件或抗蚀剂膜涂覆条件中的至少一个。

9. 发明申请

US20100112812A1 Photomask quality estimation system and method for use in manufacturing of semiconductor device, and method for manufacturing the semiconductor device 审中-公开
标题翻译：用于制造半导体器件的光掩模质量估计系统和方法以及半导体器件的制造方法
公开(公告)号：US20100112812A1
公开(公告)日：2010-05-06
申请号：US12588968
申请日：2009-11-04
申请人： Yukiyasu Arisawa , Tadahito Fujisawa , Shoji Mimotogi
发明人： Yukiyasu Arisawa , Tadahito Fujisawa , Shoji Mimotogi
IPC分类号： H01L21/033 , G06F19/00 , G06F17/50
CPC分类号： G03F1/84
摘要： A photomask quality estimation system comprises a measuring unit, a latitude computation unit and an estimation unit. The measuring unit measures the mask characteristic of each of a plurality of chip patterns formed on a mask substrate. The latitude computation unit computes the exposure latitude of each chip pattern based on the mask characteristic. The estimation unit estimates the quality of each chip pattern based on the exposure latitude.
摘要翻译：光掩模质量估计系统包括测量单元，纬度计算单元和估计单元。测量单元测量形成在掩模基板上的多个芯片图案中的每一个的掩模特性。纬度计算单元基于掩模特性来计算每个码片模式的曝光宽容度。估计单元基于曝光宽容度估计每个芯片图案的质量。

10. 发明授权

US07636910B2 Photomask quality estimation system and method for use in manufacturing of semiconductor device, and method for manufacturing the semiconductor device 失效
标题翻译：用于制造半导体器件的光掩模质量估计系统和方法以及半导体器件的制造方法
公开(公告)号：US07636910B2
公开(公告)日：2009-12-22
申请号：US11475075
申请日：2006-06-27
申请人： Yukiyasu Arisawa , Tadahito Fujisawa , Shoji Mimotogi
发明人： Yukiyasu Arisawa , Tadahito Fujisawa , Shoji Mimotogi
IPC分类号： G06F17/50
CPC分类号： G03F1/84
摘要： A photomask quality estimation system comprises a measuring unit, a latitude computation unit and an estimation unit. The measuring unit measures the mask characteristic of each of a plurality of chip patterns formed on a mask substrate. The latitude computation unit computes the exposure latitude of each chip pattern based on the mask characteristic. The estimation unit estimates the quality of each chip pattern based on the exposure latitude.
摘要翻译：光掩模质量估计系统包括测量单元，纬度计算单元和估计单元。测量单元测量形成在掩模基板上的多个芯片图案中的每一个的掩模特性。纬度计算单元基于掩模特性来计算每个码片模式的曝光宽容度。估计单元基于曝光宽容度估计每个芯片图案的质量。

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