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1. 发明授权

US08742499B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08742499B2
公开(公告)日：2014-06-03
申请号：US12608751
申请日：2009-10-29
申请人： Shizuki Nakajima , Hiroyuki Nagai , Yuji Shirai , Hirokazu Nakajima , Chushiro Kusano , Yu Hasegawa , Chiko Yorita , Yasuo Osone
发明人： Shizuki Nakajima , Hiroyuki Nagai , Yuji Shirai , Hirokazu Nakajima , Chushiro Kusano , Yu Hasegawa , Chiko Yorita , Yasuo Osone
IPC分类号： H01L27/082 , H01L27/088 , H01L21/8222 , H01L29/78
CPC分类号： H01L29/7835 , H01L21/823425 , H01L21/823475 , H01L23/66 , H01L24/11 , H01L24/12 , H01L24/16 , H01L24/17 , H01L24/28 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/49 , H01L24/73 , H01L25/16 , H01L27/088 , H01L29/04 , H01L29/0692 , H01L29/0847 , H01L29/0878 , H01L29/1087 , H01L29/41758 , H01L29/66659 , H01L29/7371 , H01L2223/6644 , H01L2223/6677 , H01L2224/0401 , H01L2224/05147 , H01L2224/05155 , H01L2224/05164 , H01L2224/05171 , H01L2224/05553 , H01L2224/05644 , H01L2224/05666 , H01L2224/1134 , H01L2224/13099 , H01L2224/13144 , H01L2224/16225 , H01L2224/16235 , H01L2224/291 , H01L2224/29111 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/49171 , H01L2224/73265 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/0133 , H01L2924/014 , H01L2924/04941 , H01L2924/10161 , H01L2924/10329 , H01L2924/10336 , H01L2924/12041 , H01L2924/1305 , H01L2924/1306 , H01L2924/13064 , H01L2924/13091 , H01L2924/14 , H01L2924/1517 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/19105 , H01L2924/30105 , H01L2924/3011 , H01L2924/30111 , H05K1/0206 , H05K2201/09481 , H05K2201/096 , H05K2201/10674 , H01L2924/00 , H01L2924/01028 , H01L2924/01032 , H01L2924/01083 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207 , H01L2924/013
摘要： In a semiconductor chip in which LDMOSFET elements for power amplifier circuits used for a power amplifier module are formed, a source bump electrode is disposed on an LDMOSFET formation region in which a plurality of source regions, a plurality of drain regions and a plurality of gate electrodes for the LDMOSFET elements are formed. The source bump electrode is formed on a source pad mainly made of aluminum via a source conductor layer which is thicker than the source pad and mainly made of copper. No resin film is interposed between the source bump electrode and the source conductor layer.
摘要翻译：在其中形成用于功率放大器模块的功率放大器电路的LDMOSFET元件形成的半导体芯片中，源极突起电极设置在LDMOSFET形成区域中，其中多个源极区域，多个漏极区域和多个栅极形成用于LDMOSFET元件的电极。源极突起电极通过源极导体层形成在主要由铝制成的源极焊盘上，该源极导体层比源焊盘厚，主要由铜制成。在源凸起电极和源极导体层之间不设置树脂膜。

2. 发明授权

US07554193B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07554193B2
公开(公告)日：2009-06-30
申请号：US11504736
申请日：2006-08-16
申请人： Yasuo Osone , Chiko Yorita , Kenya Kawano , Yu Hasegawa , Yuji Shirai , Seiichi Tomoi , Tsuneo Endou , Satoru Konishi , Hirokazu Nakajima
发明人： Yasuo Osone , Chiko Yorita , Kenya Kawano , Yu Hasegawa , Yuji Shirai , Seiichi Tomoi , Tsuneo Endou , Satoru Konishi , Hirokazu Nakajima
IPC分类号： H01L23/34 , H01L23/48
CPC分类号： H01L25/16 , H01L23/3677 , H01L23/49822 , H01L24/32 , H01L24/48 , H01L24/81 , H01L2224/16225 , H01L2224/16227 , H01L2224/16235 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73204 , H01L2224/73265 , H01L2224/81801 , H01L2924/00014 , H01L2924/01033 , H01L2924/0132 , H01L2924/10329 , H01L2924/1305 , H01L2924/15153 , H01L2924/1517 , H01L2924/181 , H01L2924/19105 , H01L2924/00 , H01L2924/01031 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device capable of reducing the thermal resistance in a flip chip packaging structure while achieving both the high radiation performance and manufacturing readiness without increasing the manufacturing cost is provided. In a semiconductor device having a semiconductor circuit for power amplification and a control circuit of the semiconductor circuit laminated on a multilayer circuit board, the semiconductor circuit for power amplification and the control circuit are aligned in parallel on the same semiconductor element, and the semiconductor element is flip-chip connected on the multilayer circuit board. Further, a second semiconductor element mounted in addition to the first semiconductor element and all components and submodules are flip-chip connected. Also, a plurality of bumps are united in order to improve the radiation performance and thermal vias of the multilayer circuit board are formed in second and lower layers of the wiring layers in the multilayer circuit board.
摘要翻译：本发明提供了能够在不增加制造成本的同时实现高放射性能和制造准备性的同时降低倒装芯片封装结构中的热阻的半导体器件。在具有用于功率放大的半导体电路和叠层在多层电路板上的半导体电路的控制电路的半导体器件中，用于功率放大的半导体电路和控制电路并联在同一半导体元件上，半导体元件在多层电路板上倒装芯片连接。此外，除了第一半导体元件和所有元件和子模块之外安装的第二半导体元件被倒装连接。此外，为了提高辐射性能，将多个凸块结合起来，多层电路板的布线层的第二层和下层形成多层电路板的热通孔。

3. 发明申请

US20070040255A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20070040255A1
公开(公告)日：2007-02-22
申请号：US11504736
申请日：2006-08-16
申请人： Yasuo Osone , Chiko Yorita , Kenya Kawano , Yu Hasegawa , Yuji Shirai , Seiichi Tomoi , Tsuneo Endou , Satoru Konishi , Hirokazu Nakajima
发明人： Yasuo Osone , Chiko Yorita , Kenya Kawano , Yu Hasegawa , Yuji Shirai , Seiichi Tomoi , Tsuneo Endou , Satoru Konishi , Hirokazu Nakajima
IPC分类号： H01L23/02
CPC分类号： H01L25/16 , H01L23/3677 , H01L23/49822 , H01L24/32 , H01L24/48 , H01L24/81 , H01L2224/16225 , H01L2224/16227 , H01L2224/16235 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73204 , H01L2224/73265 , H01L2224/81801 , H01L2924/00014 , H01L2924/01033 , H01L2924/0132 , H01L2924/10329 , H01L2924/1305 , H01L2924/15153 , H01L2924/1517 , H01L2924/181 , H01L2924/19105 , H01L2924/00 , H01L2924/01031 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device capable of reducing the thermal resistance in a flip chip packaging structure while achieving both the high radiation performance and manufacturing readiness without increasing the manufacturing cost is provided. In a semiconductor device having a semiconductor circuit for power amplification and a control circuit of the semiconductor circuit laminated on a multilayer circuit board, the semiconductor circuit for power amplification and the control circuit are aligned in parallel on the same semiconductor element, and the semiconductor element is flip-chip connected on the multilayer circuit board. Further, a second semiconductor element mounted in addition to the first semiconductor element and all components and submodules are flip-chip connected. Also, a plurality of bumps are united in order to improve the radiation performance and thermal vias of the multilayer circuit board are formed in second and lower layers of the wiring layers in the multilayer circuit board.
摘要翻译：本发明提供了能够在不增加制造成本的同时实现高放射性能和制造准备性的同时降低倒装芯片封装结构中的热阻的半导体器件。在具有用于功率放大的半导体电路和叠层在多层电路板上的半导体电路的控制电路的半导体器件中，用于功率放大的半导体电路和控制电路并联在同一半导体元件上，半导体元件在多层电路板上倒装芯片连接。此外，除了第一半导体元件和所有元件和子模块之外安装的第二半导体元件被倒装连接。此外，为了提高辐射性能，将多个凸块结合起来，多层电路板的布线层的第二层和下层形成多层电路板的热通孔。

4. 发明申请

US20070176298A1 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US20070176298A1
公开(公告)日：2007-08-02
申请号：US11652235
申请日：2007-01-10
申请人： Yasuo Osone , Kenya Kawano , Chiko Yorita , Yu Hasegawa , Yuji Shirai , Naotaka Tanaka , Seiichi Tomoi , Hiroshi Okabe
发明人： Yasuo Osone , Kenya Kawano , Chiko Yorita , Yu Hasegawa , Yuji Shirai , Naotaka Tanaka , Seiichi Tomoi , Hiroshi Okabe
IPC分类号： H01L23/52 , H01L23/48
CPC分类号： H01L23/3677 , H01L23/3121 , H01L23/34 , H01L24/48 , H01L24/73 , H01L25/0657 , H01L2223/6644 , H01L2223/6688 , H01L2224/13025 , H01L2224/16145 , H01L2224/16225 , H01L2224/16235 , H01L2224/16237 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73203 , H01L2224/73257 , H01L2224/73265 , H01L2225/0651 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06568 , H01L2225/06582 , H01L2225/06589 , H01L2924/00014 , H01L2924/1305 , H01L2924/13064 , H01L2924/13091 , H01L2924/14 , H01L2924/1515 , H01L2924/15153 , H01L2924/1517 , H01L2924/181 , H01L2924/1815 , H01L2924/00012 , H01L2224/48237 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： Heating elements different in heat generating timing are laminated in a stacked state, and the heating element close to a wiring substrate is allowed to function as a heat diffusion plate for another heating element.
摘要翻译：发热时刻不同的加热元件层叠在堆叠状态，允许靠近布线基板的加热元件用作另一个加热元件的热扩散板。

5. 发明授权

US07656030B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US07656030B2
公开(公告)日：2010-02-02
申请号：US11652235
申请日：2007-01-10
申请人： Yasuo Osone , Kenya Kawano , Chiko Yorita , Yu Hasegawa , Yuji Shirai , Naotaka Tanaka , Seiichi Tomoi , Hiroshi Okabe
发明人： Yasuo Osone , Kenya Kawano , Chiko Yorita , Yu Hasegawa , Yuji Shirai , Naotaka Tanaka , Seiichi Tomoi , Hiroshi Okabe
IPC分类号： H01L23/34 , H01L23/48
CPC分类号： H01L23/3677 , H01L23/3121 , H01L23/34 , H01L24/48 , H01L24/73 , H01L25/0657 , H01L2223/6644 , H01L2223/6688 , H01L2224/13025 , H01L2224/16145 , H01L2224/16225 , H01L2224/16235 , H01L2224/16237 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73203 , H01L2224/73257 , H01L2224/73265 , H01L2225/0651 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06568 , H01L2225/06582 , H01L2225/06589 , H01L2924/00014 , H01L2924/1305 , H01L2924/13064 , H01L2924/13091 , H01L2924/14 , H01L2924/1515 , H01L2924/15153 , H01L2924/1517 , H01L2924/181 , H01L2924/1815 , H01L2924/00012 , H01L2224/48237 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： Heating elements different in heat generating timing are laminated in a stacked state, and the heating element close to a wiring substrate is allowed to function as a heat diffusion plate for another heating element.
摘要翻译：发热时刻不同的加热元件层叠在堆叠状态，允许靠近布线基板的加热元件用作另一个加热元件的热扩散板。

6. 发明授权

US07583163B2 Acoustic wave filter and manufacturing method of the same 失效
标题翻译：声波滤波器及其制造方法相同
公开(公告)号：US07583163B2
公开(公告)日：2009-09-01
申请号：US11891368
申请日：2007-08-10
申请人： Yasuo Osone , Chiko Yorita , Yuji Shirai , Seiichi Tomoi
发明人： Yasuo Osone , Chiko Yorita , Yuji Shirai , Seiichi Tomoi
IPC分类号： H03H9/00 , H03H9/205 , H01L41/08
CPC分类号： H03H3/04 , H03H9/564 , H03H9/589 , H03H2003/025
摘要： A technique capable of integrally forming SMR type acoustic wave filters corresponding to multiple bands on the same chip at low cost is provided. In SMR type acoustic wave filters including multiple bandpass filters corresponding to multiple bands formed over the same die (substrate), acoustic multilayer films are formed without or with a minimum number of masks and piezoelectric thin films having different thicknesses for respective bands are collectively formed. For example, after the acoustic multilayer films (low acoustic impedance layers and high acoustic impedance layers) are formed in a deep groove in a terrace paddy field shape over the die in a maskless manner, the piezoelectric thin films are c-axis-oriented and grown, and are polished by CMP method or the like to be adjusted in a thickness for respective bands, and therefore, the SMR type acoustic wave filters for multiple bands are formed over the same chip.
摘要翻译：提供了能够以低成本一体地形成对应于同一芯片上的多个频带的SMR型声波滤波器的技术。在包括对应于形成在同一芯片（基板）上的多个带的多个带通滤波器的SMR型声波滤波器中，形成声学多层膜，而不需要最少数量的掩模，并且共同形成具有不同厚度的压电薄膜。例如，在以无掩模的方式在模具上形成在平台水田的深槽中的声学多层膜（低声阻抗层和高声阻抗层）之后，压电薄膜是c轴取向的，并通过CMP方法等进行抛光，以对各个带的厚度进行调整，因此，在同一芯片上形成多个带的SMR型声波滤波器。

7. 发明申请

US20080129412A1 Acoustic wave filter and manufacturing method of the same 失效
标题翻译：声波滤波器及其制造方法相同
公开(公告)号：US20080129412A1
公开(公告)日：2008-06-05
申请号：US11891368
申请日：2007-08-10
申请人： Yasuo Osone , Chiko Yorita , Yuji Shirai , Seiichi Tomoi
发明人： Yasuo Osone , Chiko Yorita , Yuji Shirai , Seiichi Tomoi
IPC分类号： H03H9/70 , H03H9/54
CPC分类号： H03H3/04 , H03H9/564 , H03H9/589 , H03H2003/025
摘要： A technique capable of integrally forming SMR type acoustic wave filters corresponding to multiple bands on the same chip at low cost is provided. In SMR type acoustic wave filters including multiple bandpass filters corresponding to multiple bands formed over the same die (substrate), acoustic multilayer films are formed without or with a minimum number of masks and piezoelectric thin films having different thicknesses for respective bands are collectively formed. For example, after the acoustic multilayer films (low acoustic impedance layers and high acoustic impedance layers) are formed in a deep groove in a terrace paddy field shape over the die in a maskless manner, the piezoelectric thin films are c-axis-oriented and grown, and are polished by CMP method or the like to be adjusted in a thickness for respective bands, and therefore, the SMR type acoustic wave filters for multiple bands are formed over the same chip.
摘要翻译：提供了能够以低成本一体地形成对应于同一芯片上的多个频带的SMR型声波滤波器的技术。在包括对应于形成在同一芯片（基板）上的多个带的多个带通滤波器的SMR型声波滤波器中，形成声学多层膜，而不需要最少数量的掩模，并且共同形成具有不同厚度的压电薄膜。例如，在以无掩模的方式在模具上形成在平台水田的深槽中的声学多层膜（低声阻抗层和高声阻抗层）之后，压电薄膜是c轴取向的，并通过CMP方法等进行抛光，以对各个带的厚度进行调整，因此，在同一芯片上形成多个带的SMR型声波滤波器。

8. 发明申请

US20100032720A1 SEMICONDUCTOR DEVICE AND RADIO COMMUNICATION DEVICE 有权
标题翻译：半导体器件和无线电通信设备
公开(公告)号：US20100032720A1
公开(公告)日：2010-02-11
申请号：US12579975
申请日：2009-10-15
申请人： Satoshi SASAKI , Yasunari Umemoto , Yasuo Osone , Tsutomu Kobori , Chushiro Kusano , Isao Ohbu , Kenji Sasaki
发明人： Satoshi SASAKI , Yasunari Umemoto , Yasuo Osone , Tsutomu Kobori , Chushiro Kusano , Isao Ohbu , Kenji Sasaki
IPC分类号： H01L27/082 , H01L23/52
CPC分类号： H01L29/7304 , H01L23/66 , H01L24/48 , H01L24/49 , H01L25/042 , H01L27/0605 , H01L27/067 , H01L28/40 , H01L29/0808 , H01L29/7371 , H01L2223/6627 , H01L2223/6644 , H01L2224/05553 , H01L2224/05554 , H01L2224/32225 , H01L2224/48091 , H01L2224/48095 , H01L2224/48137 , H01L2224/48227 , H01L2224/48235 , H01L2224/49113 , H01L2224/49171 , H01L2224/73265 , H01L2924/00014 , H01L2924/01002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/0102 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01031 , H01L2924/01032 , H01L2924/01033 , H01L2924/01037 , H01L2924/01041 , H01L2924/01042 , H01L2924/01049 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/10329 , H01L2924/10336 , H01L2924/1305 , H01L2924/13091 , H01L2924/14 , H01L2924/1423 , H01L2924/19032 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/19105 , H01L2924/30105 , H01L2924/3011 , H01L2924/30111 , H01L2924/00 , H01L2224/45099
摘要： A technology which allows a reduction in the thermal resistance of a semiconductor device and the miniaturization thereof is provided. The semiconductor device has a plurality of unit transistors Q, transistor formation regions 3a, 3b, and 3e each having a first number (e.g., seven) of the unit transistors Q, and transistor formation regions 3c and 3d each having a second number (e.g., four) of the unit transistors Q. The transistor formation regions 3c and 3d are located between the transistor formation regions 3a, 3b, 3e, and 3f, and the first number is larger than the second number.
摘要翻译：提供了允许半导体器件的热阻降低和小型化的技术。半导体器件具有多个单位晶体管Q，每个具有单位晶体管Q的第一数量（例如七个）的晶体管形成区域3a，3b和3e以及每个具有第二数量的晶体管形成区域3c和3d（例如，，四个）单位晶体管Q.晶体管形成区域3c和3d位于晶体管形成区域3a，3b，3e和3f之间，并且第一数量大于第二数量。

9. 发明申请

US20060138460A1 Semiconductor device and radio communication device 有权
标题翻译：半导体器件和无线电通信设备
公开(公告)号：US20060138460A1
公开(公告)日：2006-06-29
申请号：US11319084
申请日：2005-12-28
申请人： Satoshi Sasaki , Yasunari Umemoto , Yasuo Osone , Tsutomu Kobori , Chushiro Kusano , Isao Ohbu , Kenji Sasaki
发明人： Satoshi Sasaki , Yasunari Umemoto , Yasuo Osone , Tsutomu Kobori , Chushiro Kusano , Isao Ohbu , Kenji Sasaki
IPC分类号： H01L31/109
CPC分类号： H01L29/7304 , H01L23/66 , H01L24/48 , H01L24/49 , H01L25/042 , H01L27/0605 , H01L27/067 , H01L28/40 , H01L29/0808 , H01L29/7371 , H01L2223/6627 , H01L2223/6644 , H01L2224/05553 , H01L2224/05554 , H01L2224/32225 , H01L2224/48091 , H01L2224/48095 , H01L2224/48137 , H01L2224/48227 , H01L2224/48235 , H01L2224/49113 , H01L2224/49171 , H01L2224/73265 , H01L2924/00014 , H01L2924/01002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/0102 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01031 , H01L2924/01032 , H01L2924/01033 , H01L2924/01037 , H01L2924/01041 , H01L2924/01042 , H01L2924/01049 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/10329 , H01L2924/10336 , H01L2924/1305 , H01L2924/13091 , H01L2924/14 , H01L2924/1423 , H01L2924/19032 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/19105 , H01L2924/30105 , H01L2924/3011 , H01L2924/30111 , H01L2924/00 , H01L2224/45099
摘要： A technology which allows a reduction in the thermal resistance of a semiconductor device and the miniaturization thereof is provided. The semiconductor device has a plurality of unit transistors Q, transistor formation regions 3a, 3b, and 3e each having a first number (seven) of the unit transistors Q, and transistor formation regions 3c and 3d each having a second number (four) of the unit transistors Q. The transistor formation regions 3c and 3d are located between the transistor formation regions 3a, 3b, 3e, and 3f and the first number is larger than the second number.
摘要翻译：提供了允许半导体器件的热阻降低和小型化的技术。半导体器件具有多个单位晶体管Q，具有第一数量（7）的单位晶体管Q的晶体管形成区域3a，3b和3e，以及分别具有第二（4个）晶体管Q.晶体管形成区域3c和3d位于晶体管形成区域3a，3b，3e和3f之间，第一个数量大于第二个数量。

10. 发明授权

US08860093B2 Semiconductor device and radio communication device 有权
标题翻译：半导体器件和无线电通信设备
公开(公告)号：US08860093B2
公开(公告)日：2014-10-14
申请号：US13538121
申请日：2012-06-29
申请人： Satoshi Sasaki , Yasunari Umemoto , Yasuo Osone , Tsutomu Kobori , Chushiro Kusano , Isao Ohbu , Kenji Sasaki
发明人： Satoshi Sasaki , Yasunari Umemoto , Yasuo Osone , Tsutomu Kobori , Chushiro Kusano , Isao Ohbu , Kenji Sasaki
IPC分类号： H01L27/102 , H01L29/737 , H03F3/195 , H01L23/66 , H01L27/06 , H01L23/00
CPC分类号： H01L29/7304 , H01L23/66 , H01L24/48 , H01L24/49 , H01L25/042 , H01L27/0605 , H01L27/067 , H01L28/40 , H01L29/0808 , H01L29/7371 , H01L2223/6627 , H01L2223/6644 , H01L2224/05553 , H01L2224/05554 , H01L2224/32225 , H01L2224/48091 , H01L2224/48095 , H01L2224/48137 , H01L2224/48227 , H01L2224/48235 , H01L2224/49113 , H01L2224/49171 , H01L2224/73265 , H01L2924/00014 , H01L2924/01002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/0102 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01031 , H01L2924/01032 , H01L2924/01033 , H01L2924/01037 , H01L2924/01041 , H01L2924/01042 , H01L2924/01049 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/10329 , H01L2924/10336 , H01L2924/1305 , H01L2924/13091 , H01L2924/14 , H01L2924/1423 , H01L2924/19032 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/19105 , H01L2924/30105 , H01L2924/3011 , H01L2924/30111 , H01L2924/00 , H01L2224/45099
摘要： A technology which allows a reduction in the thermal resistance of a semiconductor device used in a radio communication device, and the miniaturization thereof is provided. For example, the semiconductor device can include a plurality of unit transistors Q, transistor formation regions 3a, 3b, and 3e each having a first number (e.g., seven) of the unit transistors Q, and transistor formation regions 3c and 3d each having a second number (e.g., four) of the unit transistors Q. The transistor formation regions 3c and 3d are located between the transistor formation regions 3a, 3b, 3e, and 3f, and the first number is larger than the second number.
摘要翻译：提供了允许降低无线电通信装置中使用的半导体装置的热阻的技术及其小型化。例如，半导体器件可以包括多个单位晶体管Q，具有单位晶体管Q的第一数量（例如7个）的晶体管形成区域3a，3b和3e以及每个具有单位晶体管Q的晶体管形成区域3c和3d 晶体管形成区域3c和3d位于晶体管形成区域3a，3b，3e和3f之间，第一数量大于第二数量。

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