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1. 发明申请

US20120261799A1 SEMICONDUCTOR DEVICE AND RADIO COMMUNICATION DEVICE 有权
标题翻译：半导体器件和无线电通信设备
公开(公告)号：US20120261799A1
公开(公告)日：2012-10-18
申请号：US13538121
申请日：2012-06-29
申请人： Satoshi SASAKI , Yasunari UMEMOTO , Yasuo OSONE , Tsutomu KOBORI , Chushiro KUSANO , Isao OHBU , Kenji SASAKI
发明人： Satoshi SASAKI , Yasunari UMEMOTO , Yasuo OSONE , Tsutomu KOBORI , Chushiro KUSANO , Isao OHBU , Kenji SASAKI
IPC分类号： H01L27/04
CPC分类号： H01L29/7304 , H01L23/66 , H01L24/48 , H01L24/49 , H01L25/042 , H01L27/0605 , H01L27/067 , H01L28/40 , H01L29/0808 , H01L29/7371 , H01L2223/6627 , H01L2223/6644 , H01L2224/05553 , H01L2224/05554 , H01L2224/32225 , H01L2224/48091 , H01L2224/48095 , H01L2224/48137 , H01L2224/48227 , H01L2224/48235 , H01L2224/49113 , H01L2224/49171 , H01L2224/73265 , H01L2924/00014 , H01L2924/01002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/0102 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01031 , H01L2924/01032 , H01L2924/01033 , H01L2924/01037 , H01L2924/01041 , H01L2924/01042 , H01L2924/01049 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/10329 , H01L2924/10336 , H01L2924/1305 , H01L2924/13091 , H01L2924/14 , H01L2924/1423 , H01L2924/19032 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/19105 , H01L2924/30105 , H01L2924/3011 , H01L2924/30111 , H01L2924/00 , H01L2224/45099
摘要： A technology which allows a reduction in the thermal resistance of a semiconductor device used in a radio communication device, and the miniaturization thereof is provided. For example, the semiconductor device can include a plurality of unit transistors Q, transistor formation regions 3a, 3b, and 3e each having a first number (e.g., seven) of the unit transistors Q, and transistor formation regions 3c and 3d each having a second number (e.g., four) of the unit transistors Q. The transistor formation regions 3c and 3d are located between the transistor formation regions 3a, 3b, 3e, and 3f, and the first number is larger than the second number.
摘要翻译：提供了允许降低无线电通信装置中使用的半导体装置的热阻的技术及其小型化。例如，半导体器件可以包括多个单位晶体管Q，具有单位晶体管Q的第一数量（例如7个）的晶体管形成区域3a，3b和3e以及每个具有单位晶体管Q的晶体管形成区域3c和3d 晶体管形成区域3c和3d位于晶体管形成区域3a，3b，3e和3f之间，第一数量大于第二数量。

2. 发明申请

US20100032720A1 SEMICONDUCTOR DEVICE AND RADIO COMMUNICATION DEVICE 有权
标题翻译：半导体器件和无线电通信设备
公开(公告)号：US20100032720A1
公开(公告)日：2010-02-11
申请号：US12579975
申请日：2009-10-15
申请人： Satoshi SASAKI , Yasunari Umemoto , Yasuo Osone , Tsutomu Kobori , Chushiro Kusano , Isao Ohbu , Kenji Sasaki
发明人： Satoshi SASAKI , Yasunari Umemoto , Yasuo Osone , Tsutomu Kobori , Chushiro Kusano , Isao Ohbu , Kenji Sasaki
IPC分类号： H01L27/082 , H01L23/52
CPC分类号： H01L29/7304 , H01L23/66 , H01L24/48 , H01L24/49 , H01L25/042 , H01L27/0605 , H01L27/067 , H01L28/40 , H01L29/0808 , H01L29/7371 , H01L2223/6627 , H01L2223/6644 , H01L2224/05553 , H01L2224/05554 , H01L2224/32225 , H01L2224/48091 , H01L2224/48095 , H01L2224/48137 , H01L2224/48227 , H01L2224/48235 , H01L2224/49113 , H01L2224/49171 , H01L2224/73265 , H01L2924/00014 , H01L2924/01002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/0102 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01031 , H01L2924/01032 , H01L2924/01033 , H01L2924/01037 , H01L2924/01041 , H01L2924/01042 , H01L2924/01049 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/10329 , H01L2924/10336 , H01L2924/1305 , H01L2924/13091 , H01L2924/14 , H01L2924/1423 , H01L2924/19032 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/19105 , H01L2924/30105 , H01L2924/3011 , H01L2924/30111 , H01L2924/00 , H01L2224/45099
摘要： A technology which allows a reduction in the thermal resistance of a semiconductor device and the miniaturization thereof is provided. The semiconductor device has a plurality of unit transistors Q, transistor formation regions 3a, 3b, and 3e each having a first number (e.g., seven) of the unit transistors Q, and transistor formation regions 3c and 3d each having a second number (e.g., four) of the unit transistors Q. The transistor formation regions 3c and 3d are located between the transistor formation regions 3a, 3b, 3e, and 3f, and the first number is larger than the second number.
摘要翻译：提供了允许半导体器件的热阻降低和小型化的技术。半导体器件具有多个单位晶体管Q，每个具有单位晶体管Q的第一数量（例如七个）的晶体管形成区域3a，3b和3e以及每个具有第二数量的晶体管形成区域3c和3d（例如，，四个）单位晶体管Q.晶体管形成区域3c和3d位于晶体管形成区域3a，3b，3e和3f之间，并且第一数量大于第二数量。

3. 发明申请

US20090227561A1 FUSED HETEROCYCLIC DERIVATIVE AND USE THEREOF 有权
标题翻译：熔融杂环衍生物及其用途
公开(公告)号：US20090227561A1
公开(公告)日：2009-09-10
申请号：US12392640
申请日：2009-02-25
申请人： Nobuhiro FUJII , Yuya OGURO , Satoshi SASAKI , Shigeru KONDO
发明人： Nobuhiro FUJII , Yuya OGURO , Satoshi SASAKI , Shigeru KONDO
IPC分类号： A61K31/4365 , A61K31/397 , A61K31/551 , A61K31/5377 , A61K31/496 , C07D243/08 , C07D413/14 , C07D495/04 , A61P35/00
CPC分类号： C07D471/04 , C07D471/14 , C07D498/04 , C07D513/04
摘要： The present invention provides a compound having a superior Smo inhibitory activity and lower toxicity, which is sufficiently satisfactory as a pharmaceutical product.The present invention provides a compound represented by the formula wherein ring A is 5- to 7-membered ring optionally having substituent(s), where substituents are optionally bonded to each other to form a ring; X is O, S or NR1 (R1 is a hydrogen atom or a hydrocarbon group optionally having substituent(s)); R2 is carbamoyl optionally having substituent(s); and R3 is hydroxy optionally having substituent(s), or a salt thereof.
摘要翻译：本发明提供具有优异的Smo抑制活性和较低毒性的化合物，其作为药物产品足够令人满意。本发明提供由下式表示的化合物：其中环A为任选具有取代基的5-至7-元环，其中取代基任选地彼此键合形成环; X是O，S或NR1（R1是氢原子或任选具有取代基的烃基）; R2是任选具有取代基的氨基甲酰基; 和R 3是任选具有取代基的羟基，或其盐。

4. 发明申请

US20070230190A1 Lighting Device 审中-公开
标题翻译：照明装置
公开(公告)号：US20070230190A1
公开(公告)日：2007-10-04
申请号：US11692919
申请日：2007-03-29
申请人： Satoshi SASAKI
发明人： Satoshi SASAKI
IPC分类号： F21V5/00
CPC分类号： F21V5/04 , F21S41/143 , F21S41/147 , F21S41/28 , F21S43/14 , F21S43/26 , F21Y2115/10
摘要： A lighting device such as a vehicle lighting device can be configured to be easily adapted to design changes in order to comply with various required or desired luminous intensity distributions. Light emitted from a light source at a large angle with respect to a main optical axis of the light source is more significantly condensed closer to the main optical axis than is the light emitted from the light source at a relatively smaller angle with respect to the main optical axis of the light source. The lighting device can include a lens which has a first lens cut and a second lens cut. The first lens cut can allow light emitted from the light source at a relatively smaller angle with respect to the main optical axis of the light source to pass therethrough. The second lens cut is arranged outside the first lens cut so as to condense light, emitted from the light source at a larger angle, close to the main optical axis of the light source.
摘要翻译：诸如车辆照明装置的照明装置可以被配置为容易地适应于设计变化以便符合各种所需或期望的发光强度分布。从光源相对于光源的主光轴以大角度发射的光比从光源以相对于主光源相对较小的角度发射的光更接近于主光轴光源的光轴。照明装置可以包括具有第一透镜切割和第二透镜切割的透镜。第一透镜切割可以允许从光源发射的光以相对于光源的主光轴相对较小的角度通过。第二透镜切割被布置在第一透镜切割的外侧，以便以更大的角度将光从光源发射，以接近光源的主光轴。

5. 发明申请

US20110031466A1 SEMICONDUCTOR MEMORY DEVICE AND A METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US20110031466A1
公开(公告)日：2011-02-10
申请号：US12819874
申请日：2010-06-21
申请人： Yoshihisa KAGAWA , Tetsuya MIZUGUCHI , Ichiro FUJIWARA , Akira KOUCHIYAMA , Satoshi SASAKI , Naomi YAMADA
发明人： Yoshihisa KAGAWA , Tetsuya MIZUGUCHI , Ichiro FUJIWARA , Akira KOUCHIYAMA , Satoshi SASAKI , Naomi YAMADA
IPC分类号： H01L27/24 , H01L21/77 , H01L21/06
CPC分类号： H01L45/06 , H01L45/085 , H01L45/1233 , H01L45/146 , H01L45/16 , H01L45/1633
摘要： Disclosed herein is a semiconductor memory device, including: a first electrode formed on a substrate; an ion source layer formed on an upper layer of the first electrode; and a second electrode formed on an upper layer of the ion source layer. Resistance change type memory cells in each of which either a surface of the first electrode or a surface of the ion source layer is oxidized to form a resistance change type memory layer in an interface between the first electrode and the ion source interface are arranged in a array.
摘要翻译：本文公开了一种半导体存储器件，包括：形成在衬底上的第一电极; 形成在所述第一电极的上层上的离子源层; 以及形成在所述离子源层的上层上的第二电极。将第一电极的表面或离子源层的表面氧化形成第一电极和离子源界面之间的界面中的电阻变化型存储层的电阻变化型存储单元配置在数组。

6. 发明申请

US20120255895A1 WATER PURIFIER 有权
标题翻译：水净化器
公开(公告)号：US20120255895A1
公开(公告)日：2012-10-11
申请号：US13080757
申请日：2011-04-06
申请人： Tsutomu SASAKI , Satoshi SASAKI
发明人： Tsutomu SASAKI , Satoshi SASAKI
IPC分类号： B01D35/22 , B01D35/04 , B01D35/30
CPC分类号： C02F1/003 , C02F1/283 , C02F1/44 , C02F2303/16 , C02F2307/06
摘要： A water purifier that performs back washing extremely effectively even when raw water contains a large amount of impurities includes an attachment main body including an inflow passage into which raw water from an inflow port flows, and first and second outflow passages through which water flows toward outflow ports; and a water purification main body that is attached rotatably to the attachment main body and includes a first flow passage, a second flow passage, and a third flow passage, a first filter member disposed between the first flow passage and the second flow passage and a second filter member disposed between the second flow passage and the third flow passage, wherein, when the attachment main body and the water purification main body are in a rotation position corresponding to a water purification mode, the first flow passage and the second flow passage communicate with the inflow passage and the first outflow passage, respectively, and when the attachment main body and the water purification main body are in a rotation position corresponding to aback washing mode, the third flow passage and the first flow passage communicate with the inflow passage and the second outflow passage, respectively, whereby the first filter member is back washed.
摘要翻译：即使在原水含有大量杂质的情况下也能够极其有效地进行反洗的净水器包括：附加主体，其具有流入流入口的原水的流入通道和水向外流出的第一和第二流出通道港口以及净水主体，其可旋转地附接到所述安装主体，并且包括第一流动通道，第二流动通道和第三流动通道，设置在所述第一流动通道和所述第二流动通道之间的第一过滤构件，所述第二过滤构件设置在所述第二流路和所述第三流路之间，其中，当所述附着主体和所述净水主体处于与水净化模式对应的旋转位置时，所述第一流路和所述第二流路连通分别具有流入通道和第一流出通道，并且当安装主体和净水主体处于与清洗模式相对应的旋转位置时，第三流动通道和第一流动通道与流入通道连通，第二流出通道，从而第一过滤构件被反洗。

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