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1. 发明申请

US20070105868A1 Phenylacetic acid derivative, process for producing the same, and use 失效
标题翻译：苯乙酸衍生物，其制备方法及用途
公开(公告)号：US20070105868A1
公开(公告)日：2007-05-10
申请号：US10572937
申请日：2004-09-21
申请人： Shinya Kusuda , Yoshisuke Nakayama , Hisao Tajima , Takahiko Sakamoto
发明人： Shinya Kusuda , Yoshisuke Nakayama , Hisao Tajima , Takahiko Sakamoto
IPC分类号： A61K31/496 , A61K31/4709 , A61K31/454 , A61K31/427 , A61K31/426
CPC分类号： C07D413/10 , A61K31/421 , A61K31/422 , A61K31/426 , A61K31/4439 , A61K31/454
摘要： The present invention relates to the compound represented by formula (I) (wherein R1 and R2 is hydrogen atom, C1-8 alkyl etc.; R3 is C1-8 alkyl which may be substituted with 1 to 3 halogen atom(s), phenyl; R4 is hydrogen atom etc.; R5 and R6 is hydrogen atom, C1-8 alkyl etc.; X is sulfur atom or oxygen atom etc.; ringA is cyclic group which may have a substituent(s).), or a salt thereof. Toxicity of the compound represented by formula (I) is very low, and it is safe enough to use as a pharmaceutical agent and since it has PPAR δ agonistic activity, it is useful as preventive and/or therapeutic agent for glucose.lipid metabolic disorder, hypertension, circulatory diseases etc.
摘要翻译：本发明涉及由式（I）表示的化合物（其中R 1和R 2是氢原子，C 1-8烷基等; R 3 可以被1至3个卤素原子取代的C 1-8烷基，苯基; R 4是氢原子等; R 5和 R 6是氢原子，C 1-8烷基等; X是硫原子或氧原子等;环A是可以具有取代基的环状基团）或其盐。由式（I）表示的化合物的毒性非常低，并且作为药物使用是安全的，并且由于其具有PPARδ激动活性，因此它可用作葡萄糖脂代谢紊乱的预防和/或治疗剂，高血压，循环系统疾病等

2. 发明授权

US07560475B2 Phenylacetic acid derivative, process for producing the same, and use 失效
标题翻译：苯乙酸衍生物，其制备方法及用途
公开(公告)号：US07560475B2
公开(公告)日：2009-07-14
申请号：US10572937
申请日：2004-09-21
申请人： Shinya Kusuda , Yoshisuke Nakayama , Hisao Tajima , Takahiko Sakamoto
发明人： Shinya Kusuda , Yoshisuke Nakayama , Hisao Tajima , Takahiko Sakamoto
IPC分类号： A01N31/425 , A01N43/50 , A01N43/76 , A01N43/78 , A61K31/42 , A61K31/415 , C07D233/54 , C07D263/30 , C07D277/22 , C07D413/00
CPC分类号： C07D413/10 , A61K31/421 , A61K31/422 , A61K31/426 , A61K31/4439 , A61K31/454
摘要： The present invention relates to the compound represented by formula (I) (wherein R1 and R2 is hydrogen atom, C1-8 alkyl etc.; R3 is C1-8 alkyl which may be substituted with 1 to 3 halogen atom(s), phenyl; R4 is hydrogen atom etc.; R5 and R6 is hydrogen atom, C1-8 alkyl etc.; X is sulfur atom or oxygen atom etc.; ringA is cyclic group which may have a substituent(s).), or a salt thereof. Toxicity of the compound represented by formula (I) is very low, and it is safe enough to use as a pharmaceutical agent and since it has PPAR δ agonistic activity, it is useful as preventive and/or therapeutic agent for glucose•lipid metabolic disorder, hypertension, circulatory diseases etc.
摘要翻译：本发明涉及由式（I）表示的化合物（其中R 1和R 2是氢原子，C 1-8烷基等; R 3是可被1至3个卤素原子取代的C 1-8烷基，苯基 ; R4为氢原子等; R5和R6为氢原子，C1-8烷基等; X为硫原子或氧原子等;环A为可具有取代基的环状基团）或盐其中。由式（I）表示的化合物的毒性非常低，并且作为药物使用是安全的，并且由于其具有PPARδ激动活性，因此它可用作葡萄糖脂代谢紊乱的预防和/或治疗剂，高血压，循环系统疾病等

3. 发明授权

US08120057B2 Semiconductor light emitting element 有权
标题翻译：半导体发光元件
公开(公告)号：US08120057B2
公开(公告)日：2012-02-21
申请号：US13155045
申请日：2011-06-07
申请人： Masahiko Sano , Takahiko Sakamoto , Keiji Emura , Katsuyoshi Kadan
发明人： Masahiko Sano , Takahiko Sakamoto , Keiji Emura , Katsuyoshi Kadan
IPC分类号： H01L51/40
CPC分类号： H01L33/38 , H01L33/02 , H01L33/405 , H01L33/42 , H01L33/44 , H01L33/46 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/49107 , H01L2224/73265 , H01L2924/00014 , H01L2924/00
摘要： The present invention provides a light emitting element capable or realizing at least one of lower resistance, higher output, higher power efficiency (1 m/W), higher mass productivity and lower cost of the element using a light transmissive electrode for an electrode arranged exterior to the light emitting structure. A semiconductor light emitting element includes a light emitting section, a first electrode and a second electrode on a semiconductor structure including first and second conductive type semiconductor layers, the first and the second electrodes respectively including at least two layers of a first layer of a light transmissive conductive film conducting to the first and the second conductive type semiconductor and a second layer arranged so as to conduct with the first layer. First and second light transmissive insulating films are respectively arranged so as to overlap at least one part of the first and the second layers.
摘要翻译：本发明提供一种发光元件，其能够或实现使用用于布置在外部的电极的透光电极的元件的较低电阻，较高输出，更高功率效率（1m / W），更高的批量生产率和更低的成本中的至少一个到发光结构。半导体发光元件包括在包括第一和第二导电类型半导体层的半导体结构上的发光部分，第一电极和第二电极，第一和第二电极分别包括至少两层第一层光导电到第一和第二导电类型半导体的透射导电膜和布置成与第一层导通的第二层。第一和第二透光绝缘膜分别布置成与第一层和第二层的至少一部分重叠。

4. 发明授权

US07884379B2 Nitride semiconductor light emitting device 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US07884379B2
公开(公告)日：2011-02-08
申请号：US11806054
申请日：2007-05-29
申请人： Takahiko Sakamoto , Yasutaka Hamaguchi
发明人： Takahiko Sakamoto , Yasutaka Hamaguchi
IPC分类号： H01L29/205 , H01L33/00 , H01L27/15 , H01L29/165 , H01L31/12
CPC分类号： H01L33/38 , H01L33/20 , H01L2224/48091 , H01L2924/00014
摘要： A nitride semiconductor light emitting device is provided with a substrate, an n-type nitride semiconductor layer, a p-type nitride semiconductor layer, an n-side pad electrode, a translucent electrode and a p-side pad electrode, wherein the translucent electrode is formed from an electrically conductive oxide, the n-side pad electrode adjoins the periphery of the translucent electrode and the p-side pad electrode is disposed so as to satisfy the following relationships: 0.3L≦X≦0.5L and 0.2L≦Y≦0.5L where X is the distance between ends of the p-side pad electrode and the n-side pad electrode, Y is the distance between the end of the p-side pad electrode and the periphery of the translucent electrode, L is the length of the translucent electrode on the line connecting the centroids of the p-side pad electrode and the n-side pad electrode minus the outer diameter d of the p-side pad electrode.
摘要翻译：氮化物半导体发光器件具有基板，n型氮化物半导体层，p型氮化物半导体层，n侧焊盘电极，透光性电极和p侧焊盘电极，其中，所述透光性电极由导电氧化物形成，所述n侧焊盘电极与所述透光性电极的周围相邻，并且所述p侧焊盘电极配置为满足以下关系：0.3L＆nlE; X＆lt; ll; 0.5L和0.2L＆nlE; Y＆nlE ; 0.5L，其中X是p侧焊盘电极和n侧焊盘电极的端部之间的距离，Y是p侧焊盘电极的端部和透光性电极的周边之间的距离，L是连接p侧焊盘电极和n侧焊盘电极的重心的线上的透光性电极的长度减去p侧焊盘电极的外径d。

5. 发明授权

US07075115B2 Light-emitting diode 有权
公开(公告)号：US07075115B2
公开(公告)日：2006-07-11
申请号：US10674539
申请日：2003-10-01
申请人： Takahiko Sakamoto , Takeshi Kususe
发明人： Takahiko Sakamoto , Takeshi Kususe
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/20 , H01L33/22 , H01L2924/0002 , H01L2924/00
摘要： A light-emitting diode capable of making its light emission more uniform without too high a concentration current and of improving the efficiency of outgoing light and its life. In the light-emitting diode, the n-side electrode has an n-side connecting portion and an n-side extending portion, which extends in the longitudinal direction from a predetermined part of the n-side connecting portion, and the p-side pad member has at least a p-side connecting portion to be connected to a conductive member. The light-emitting diode further includes an n-side connecting area, in which the n-side connecting portion is provided, provided in proximity to one end in the longitudinal direction, a p-side connecting area, in which the p-side connecting portion is provided, provided in proximity to another end in the longitudinal direction, and a middle area provided between them, and the n-side extending portion is positioned in the middle area, and extends so as to be opposed to the p-side current diffusing member.

6. 发明授权

US07947996B2 Semiconductor light emitting element 有权
标题翻译：半导体发光元件
公开(公告)号：US07947996B2
公开(公告)日：2011-05-24
申请号：US11819496
申请日：2007-06-27
申请人： Takahiko Sakamoto , Masahiko Onishi , Yoshiki Inoue
发明人： Takahiko Sakamoto , Masahiko Onishi , Yoshiki Inoue
IPC分类号： H01L33/00
CPC分类号： H01L33/382 , H01L33/20 , H01L33/405 , H01L33/42 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/48465 , H01L2224/49107 , H01L2224/73265 , H01L2924/01322 , H01L2924/3025 , H01L2924/00014 , H01L2924/00
摘要： It is an important factor in application to the illumination field and the like to obtain a characteristic excellent in power efficiency in a light emitting element. The present invention provides a semiconductor light emitting element including: first and second conductive type semiconductor layers; first and second electrodes respectively provided on the same plane sides as the first and second conductive type semiconductor layers; and a light emitting structure, provided with the second electrode and including the first and second conductive type semiconductor layers, wherein the first electrode provided on an exposed surface of the first conductive type semiconductor layer at least has a translucent first layer and a reflective second layer, and the first layer has projecting portions projected from both sides of the second layer in a cross section of the element crossing over the light emitting structure and the first electrode.
摘要翻译：在照明场等中应用的重要因素是获得发光元件的功率效率优异的特性。本发明提供一种半导体发光元件，包括：第一和第二导电型半导体层; 第一和第二电极分别设置在与第一和第二导电类型半导体层相同的平面上; 以及设置有第二电极并且包括第一和第二导电类型半导体层的发光结构，其中设置在第一导电类型半导体层的暴露表面上的第一电极至少具有半透明的第一层和反射的第二层并且所述第一层在所述元件的与所述发光结构和所述第一电极交叉的横截面中具有从所述第二层的两侧突出的突出部分。

7. 发明授权

US07495259B2 Light-emitting diode 有权
标题翻译：发光二极管
公开(公告)号：US07495259B2
公开(公告)日：2009-02-24
申请号：US11295540
申请日：2005-12-07
申请人： Takahiko Sakamoto , Takeshi Kususe
发明人： Takahiko Sakamoto , Takeshi Kususe
IPC分类号： H01L27/15
CPC分类号： H01L33/38 , H01L33/20 , H01L33/22 , H01L2924/0002 , H01L2924/00
摘要： A light-emitting diode capable of making its light emission more uniform without too high a concentration current and of improving the efficiency of outgoing light and its life. In the light-emitting diode, the n-side electrode has an n-side connecting portion and an n-side extending portion, which extends in the longitudinal direction from a predetermined part of the n-side connecting portion, and the p-side pad member has at least a p-side connecting portion to be connected to a conductive member. The light-emitting diode further includes an n-side connecting area, in which the n-side connecting portion is provided, provided in proximity to one end in the longitudinal direction, a p-side connecting area, in which the p-side connecting portion is provided, provided in proximity to another end in the longitudinal direction, and a middle area provided between them, and the n-side extending portion is positioned in the middle area, and extends so as to be opposed to the p-side current diffusing member.
摘要翻译：能够使其发光更均匀，而不会产生高浓度电流并且提高出射光的效率及其寿命的发光二极管。在发光二极管中，n侧电极具有从n侧连接部的规定部分沿长度方向延伸的n侧连接部和n侧延伸部，p侧垫构件具有至少一个连接到导电构件的p侧连接部分。发光二极管还包括在纵向方向上的一端附近设置有n侧连接部的n侧连接区域，p侧连接区域设置在纵向另一端附近设置的部分和设置在它们之间的中间区域，并且n侧延伸部分位于中间区域中，并且延伸以与p侧电流相对扩散构件。

8. 发明申请

US20080290365A1 NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US20080290365A1
公开(公告)日：2008-11-27
申请号：US12051679
申请日：2008-03-19
申请人： Takahiko Sakamoto , Yasutaka Hamaguchi
发明人： Takahiko Sakamoto , Yasutaka Hamaguchi
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/32 , H01L33/38 , H01L33/42
摘要： A nitride semiconductor light emitting device comprising an n-side nitride semiconductor layer and a p-side nitride semiconductor layer formed on a substrate, with a light transmitting electrode 10 formed on the p-side nitride semiconductor layer, and the p-side pad electrode 14 formed for the connection with an outside circuit, and the n-side pad electrode 12 formed on the n-side nitride semiconductor layer for the connection with the outside circuit, so as to extract light on the p-side nitride semiconductor layer side, wherein taper angles of end faces of the light transmitting electrode 10 and/or the p-side nitride semiconductor layer are made different depending on the position.
摘要翻译：一种氮化物半导体发光器件，包括形成在衬底上的n侧氮化物半导体层和p侧氮化物半导体层，其中形成在p侧氮化物半导体层上的透光电极10和p侧焊盘电极 14形成用于与外部电路的连接，以及形成在n侧氮化物半导体层上用于与外部电路连接的n侧焊盘电极12，以便在p侧氮化物半导体层侧提取光，其中，透光电极10和/或p侧氮化物半导体层的端面的锥角根据位置而不同。

9. 发明申请

US20080185606A1 Semiconductor light emitting element 有权
标题翻译：半导体发光元件
公开(公告)号：US20080185606A1
公开(公告)日：2008-08-07
申请号：US12068019
申请日：2008-01-31
申请人： Masahiko Sano , Takahiko Sakamoto , Keiji Emura , Katsuyoshi Kadan
发明人： Masahiko Sano , Takahiko Sakamoto , Keiji Emura , Katsuyoshi Kadan
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/02 , H01L33/405 , H01L33/42 , H01L33/44 , H01L33/46 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/49107 , H01L2224/73265 , H01L2924/00014 , H01L2924/00
摘要： The present invention provides a light emitting element capable or realizing at least one of, preferably, most of lower resistance, higher output, higher power efficiency (1 m/W), higher mass productivity and lower cost of the element using a light transmissive electrode for an electrode arranged exterior to the light emitting structure.A semiconductor light emitting element including a light emitting section, a first electrode, and a second electrode on a semiconductor structure including first and second conductive type semiconductor layers, the first and the second electrodes being arranged on the first conductive type semiconductor layer and a second conductive type semiconductor layer of the light emitting section, respectively; and a light transmissive insulating film formed on at least one part of the second conductive type semiconductor layer; wherein the second electrode includes a first layer of a light transmissive conductive film for covering at least one part of the second conductive type semiconductor layer and a second layer which is arranged on at least one part of the light transmissive insulating film and which conducts to the first layer; a light reflecting part is formed on a surface side of the first layer, and a boundary region of the light transmissive insulating film and the semiconductor structure; and the second layer side surface of the light transmissive insulating film is distant from the semiconductor structure than the surface of the first layer is provided.
摘要翻译：本发明提供一种能够或实现低电阻，更高输出，更高功率效率（1m / W），更高的批量生产率和使用透光电极的元件的成本中的至少一个，优选地大多数的发光元件用于布置在发光结构外部的电极。一种半导体发光元件，包括在包括第一和第二导电类型半导体层的半导体结构上的发光部分，第一电极和第二电极，所述第一和第二电极布置在第一导电类型半导体层上，导电型半导体层; 以及形成在所述第二导电类型半导体层的至少一部分上的透光绝缘膜; 其中所述第二电极包括用于覆盖所述第二导电类型半导体层的至少一部分的透光导电膜的第一层和布置在所述透光绝缘膜的至少一部分上的第二层，第一层; 在第一层的表面侧和透光性绝缘膜与半导体结构的边界区域形成有光反射部，并且提供透光绝缘膜的第二层侧表面比第一层的表面远离半导体结构。

10. 发明申请

US20080142821A1 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US20080142821A1
公开(公告)日：2008-06-19
申请号：US11819496
申请日：2007-06-27
申请人： Takahiko Sakamoto , Masahiko Onishi , Yoshiki Inoue
发明人： Takahiko Sakamoto , Masahiko Onishi , Yoshiki Inoue
IPC分类号： H01L33/00
CPC分类号： H01L33/382 , H01L33/20 , H01L33/405 , H01L33/42 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/48465 , H01L2224/49107 , H01L2224/73265 , H01L2924/01322 , H01L2924/3025 , H01L2924/00014 , H01L2924/00
摘要： It is an important factor in application to the illumination field and the like to obtain a characteristic excellent in power efficiency in a light emitting element. The present invention provides a semiconductor light emitting element including: first and second conductive type semiconductor layers; first and second electrodes respectively provided on the same plane sides as the first and second conductive type semiconductor layers; and a light emitting structure, provided with the second electrode and including the first and second conductive type semiconductor layers, wherein the first electrode provided on an exposed surface of the first conductive type semiconductor layer at least has a translucent first layer and a reflective second layer, and the first layer has projecting portions projected from both sides of the second layer in a cross section of the element crossing over the light emitting structure and the first electrode.
摘要翻译：在照明场等中应用的重要因素是获得发光元件的功率效率优异的特性。本发明提供一种半导体发光元件，包括：第一和第二导电型半导体层; 第一和第二电极分别设置在与第一和第二导电类型半导体层相同的平面上; 以及设置有第二电极并且包括第一和第二导电类型半导体层的发光结构，其中设置在第一导电类型半导体层的暴露表面上的第一电极至少具有半透明的第一层和反射的第二层并且所述第一层在所述元件的与所述发光结构和所述第一电极交叉的横截面中具有从所述第二层的两侧突出的突出部分。

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