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1. 发明授权

US08120057B2 Semiconductor light emitting element 有权
标题翻译：半导体发光元件
公开(公告)号：US08120057B2
公开(公告)日：2012-02-21
申请号：US13155045
申请日：2011-06-07
申请人： Masahiko Sano , Takahiko Sakamoto , Keiji Emura , Katsuyoshi Kadan
发明人： Masahiko Sano , Takahiko Sakamoto , Keiji Emura , Katsuyoshi Kadan
IPC分类号： H01L51/40
CPC分类号： H01L33/38 , H01L33/02 , H01L33/405 , H01L33/42 , H01L33/44 , H01L33/46 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/49107 , H01L2224/73265 , H01L2924/00014 , H01L2924/00
摘要： The present invention provides a light emitting element capable or realizing at least one of lower resistance, higher output, higher power efficiency (1 m/W), higher mass productivity and lower cost of the element using a light transmissive electrode for an electrode arranged exterior to the light emitting structure. A semiconductor light emitting element includes a light emitting section, a first electrode and a second electrode on a semiconductor structure including first and second conductive type semiconductor layers, the first and the second electrodes respectively including at least two layers of a first layer of a light transmissive conductive film conducting to the first and the second conductive type semiconductor and a second layer arranged so as to conduct with the first layer. First and second light transmissive insulating films are respectively arranged so as to overlap at least one part of the first and the second layers.
摘要翻译：本发明提供一种发光元件，其能够或实现使用用于布置在外部的电极的透光电极的元件的较低电阻，较高输出，更高功率效率（1m / W），更高的批量生产率和更低的成本中的至少一个到发光结构。半导体发光元件包括在包括第一和第二导电类型半导体层的半导体结构上的发光部分，第一电极和第二电极，第一和第二电极分别包括至少两层第一层光导电到第一和第二导电类型半导体的透射导电膜和布置成与第一层导通的第二层。第一和第二透光绝缘膜分别布置成与第一层和第二层的至少一部分重叠。

2. 发明申请

US20110233596A1 SEMICONDUCTOR LIGHT EMITTING ELEMENT 有权
标题翻译：半导体发光元件
公开(公告)号：US20110233596A1
公开(公告)日：2011-09-29
申请号：US13155045
申请日：2011-06-07
申请人： Masahiko SANO , Takahiko Sakamoto , Keiji Emura , Katsuyoshi Kadan
发明人： Masahiko SANO , Takahiko Sakamoto , Keiji Emura , Katsuyoshi Kadan
IPC分类号： H01L33/42
CPC分类号： H01L33/38 , H01L33/02 , H01L33/405 , H01L33/42 , H01L33/44 , H01L33/46 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/49107 , H01L2224/73265 , H01L2924/00014 , H01L2924/00
摘要： The present invention provides a light emitting element capable or realizing at least one of lower resistance, higher output, higher power efficiency (1 m/W), higher mass productivity and lower cost of the element using a light transmissive electrode for an electrode arranged exterior to the light emitting structure. A semiconductor light emitting element includes a light emitting section, a first electrode and a second electrode on a semiconductor structure including first and second conductive type semiconductor layers, the first and the second electrodes respectively including at least two layers of a first layer of a light transmissive conductive film conducting to the first and the second conductive type semiconductor and a second layer arranged so as to conduct with the first layer. First and second light transmissive insulating films are respectively arranged so as to overlap at least one part of the first and the second layers.
摘要翻译：本发明提供一种发光元件，其能够或实现使用用于布置在外部的电极的透光电极的元件的较低电阻，较高输出，更高功率效率（1m / W），更高的批量生产率和更低的成本中的至少一个到发光结构。半导体发光元件包括在包括第一和第二导电类型半导体层的半导体结构上的发光部分，第一电极和第二电极，第一和第二电极分别包括至少两层第一层光导电到第一和第二导电类型半导体的透射导电膜和布置成与第一层导通的第二层。第一和第二透光绝缘膜分别布置成与第一层和第二层的至少一部分重叠。

3. 发明申请

US20080185606A1 Semiconductor light emitting element 有权
标题翻译：半导体发光元件
公开(公告)号：US20080185606A1
公开(公告)日：2008-08-07
申请号：US12068019
申请日：2008-01-31
申请人： Masahiko Sano , Takahiko Sakamoto , Keiji Emura , Katsuyoshi Kadan
发明人： Masahiko Sano , Takahiko Sakamoto , Keiji Emura , Katsuyoshi Kadan
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/02 , H01L33/405 , H01L33/42 , H01L33/44 , H01L33/46 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/49107 , H01L2224/73265 , H01L2924/00014 , H01L2924/00
摘要： The present invention provides a light emitting element capable or realizing at least one of, preferably, most of lower resistance, higher output, higher power efficiency (1 m/W), higher mass productivity and lower cost of the element using a light transmissive electrode for an electrode arranged exterior to the light emitting structure.A semiconductor light emitting element including a light emitting section, a first electrode, and a second electrode on a semiconductor structure including first and second conductive type semiconductor layers, the first and the second electrodes being arranged on the first conductive type semiconductor layer and a second conductive type semiconductor layer of the light emitting section, respectively; and a light transmissive insulating film formed on at least one part of the second conductive type semiconductor layer; wherein the second electrode includes a first layer of a light transmissive conductive film for covering at least one part of the second conductive type semiconductor layer and a second layer which is arranged on at least one part of the light transmissive insulating film and which conducts to the first layer; a light reflecting part is formed on a surface side of the first layer, and a boundary region of the light transmissive insulating film and the semiconductor structure; and the second layer side surface of the light transmissive insulating film is distant from the semiconductor structure than the surface of the first layer is provided.
摘要翻译：本发明提供一种能够或实现低电阻，更高输出，更高功率效率（1m / W），更高的批量生产率和使用透光电极的元件的成本中的至少一个，优选地大多数的发光元件用于布置在发光结构外部的电极。一种半导体发光元件，包括在包括第一和第二导电类型半导体层的半导体结构上的发光部分，第一电极和第二电极，所述第一和第二电极布置在第一导电类型半导体层上，导电型半导体层; 以及形成在所述第二导电类型半导体层的至少一部分上的透光绝缘膜; 其中所述第二电极包括用于覆盖所述第二导电类型半导体层的至少一部分的透光导电膜的第一层和布置在所述透光绝缘膜的至少一部分上的第二层，第一层; 在第一层的表面侧和透光性绝缘膜与半导体结构的边界区域形成有光反射部，并且提供透光绝缘膜的第二层侧表面比第一层的表面远离半导体结构。

4. 发明授权

US07982236B2 Semiconductor light emitting element 有权
标题翻译：半导体发光元件
公开(公告)号：US07982236B2
公开(公告)日：2011-07-19
申请号：US12068019
申请日：2008-01-31
申请人： Masahiko Sano , Takahiko Sakamoto , Keiji Emura , Katsuyoshi Kadan
发明人： Masahiko Sano , Takahiko Sakamoto , Keiji Emura , Katsuyoshi Kadan
IPC分类号： H01L29/43
CPC分类号： H01L33/38 , H01L33/02 , H01L33/405 , H01L33/42 , H01L33/44 , H01L33/46 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/49107 , H01L2224/73265 , H01L2924/00014 , H01L2924/00
摘要： The present invention provides a light emitting element capable or realizing at least one of lower resistance, higher output, higher power efficiency (1m/W), higher mass productivity and lower cost of the element using a light transmissive electrode for an electrode arranged exterior to the light emitting structure. A semiconductor light emitting element includes a light emitting section, a first electrode and a second electrode on a semiconductor structure including first and second conductive type semiconductor layers, the first and the second electrodes respectively including at least two layers of a first layer of a light transmissive conductive film conducting to the first and the second conductive type semiconductor and a second layer arranged so as to conduct with the first layer. First and second light transmissive insulating films are respectively arranged so as to overlap at least one part of the first and the second layers.
摘要翻译：本发明提供一种发光元件，其能够或实现使用用于布置在外部的电极的透光电极的元件的较低电阻，更高输出，更高功率效率（1m / W），更高的批量生产率和更低的成本中的至少一个发光结构。半导体发光元件包括在包括第一和第二导电类型半导体层的半导体结构上的发光部分，第一电极和第二电极，第一和第二电极分别包括至少两层第一层光导电到第一和第二导电类型半导体的透射导电膜和布置成与第一层导通的第二层。第一和第二透光绝缘膜分别布置成与第一层和第二层的至少一部分重叠。

5. 发明授权

US08546840B2 Semiconductor light emitting element 有权
标题翻译：半导体发光元件
公开(公告)号：US08546840B2
公开(公告)日：2013-10-01
申请号：US13360125
申请日：2012-01-27
申请人： Yoshiki Inoue , Keiji Emura
发明人： Yoshiki Inoue , Keiji Emura
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/20 , H01L33/382
摘要： The present invention provides a semiconductor light emitting element having; a semiconductor layer where an n-type semiconductor layer, a light emitting layer and a p-type semiconductor layer are laminated; an n-side electrode connected to the n-type semiconductor layer; and a p-side electrode connected to the p-type semiconductor layer; when the semiconductor light emitting element is viewed from above, the n-side electrode has a n-side pad electrode and n-side extension, the n-side extension comprises an n-side first extension extending from the n-side pad electrode toward the p-side pad electrode and an n-side second extension extending from the n-side first extension and formed T shape with the n-side first extension, the p-side electrode has a p-side pad electrode and a p-side extension formed so as to surround the n-side electrode, the p-side side extension comprises an p-side first extension extending from the p-side pad electrode parallel to the n-side second extension.
摘要翻译：本发明提供一种半导体发光元件，其具有：层叠n型半导体层，发光层和p型半导体层的半导体层; 连接到n型半导体层的n侧电极; 和连接到p型半导体层的p侧电极; 当从上方观察半导体发光元件时，n侧电极具有n侧焊盘电极和n侧延伸，n侧延伸部包括从n侧焊盘电极延伸的n侧第一延伸部 p侧焊盘电极和从n侧第一延伸部延伸并形成为具有n侧第一延伸部的T形的n侧第二延伸部，p侧电极具有p侧焊盘电极和p侧延伸形成为围绕n侧电极，p侧侧延伸部包括从p侧焊盘电极平行于n侧第二延伸部延伸的p侧第一延伸部。

6. 发明授权

US08466487B2 Light emitting element with extended electrodes structure 有权
标题翻译：具有延伸电极结构的发光元件
公开(公告)号：US08466487B2
公开(公告)日：2013-06-18
申请号：US13187667
申请日：2011-07-21
申请人： Keiji Emura
发明人： Keiji Emura
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/20 , H01L33/42
摘要： A semiconductor light emitting element has a first electrode and a second electrode provided on a semiconductor layer; the first electrode has a first external connector and a first extended portion and second extended portion that extend from the first external connector, the second electrode has a second external connector, and a third extended portion, a fourth extended portion, and a fifth extended portion that extend from the second external connector, the third extended portion extends along the first extended portion and farther outside than the first extended portion, the fourth extended portion extends along the second extended portion and farther outside than the second extended portion, and the fifth extended portion extends an area between the third extended portion and the fourth extended portion to the first external connector side, and the fifth extended portion is either on a line that links a point on the first extended portion at the position closest to the second external connector and a point on the second extended portion at the position closest to the second external connector, or closer to the second external connector side than the line.
摘要翻译：半导体发光元件具有设置在半导体层上的第一电极和第二电极; 所述第一电极具有第一外部连接器和从所述第一外部连接器延伸的第一延伸部分和第二延伸部分，所述第二电极具有第二外部连接器，以及第三延伸部分，第四延伸部分和第五延伸部分所述第三延伸部分从所述第二外部连接器延伸，所述第三延伸部分沿着所述第一延伸部分延伸并且比所述第一延伸部分更远，所述第四延伸部分沿着所述第二延伸部分延伸并且比所述第二延伸部分更远地延伸，部分将第三延伸部分和第四延伸部分之间的区域延伸到第一外部连接器侧，并且第五延伸部分在与最靠近第二外部连接器的位置连接第一延伸部分上的点的线上，以及或者在最靠近第二外部连接器的位置处的第二延伸部分上的点比线路更靠近第二个外部连接器侧。

7. 发明授权

US08592853B2 Semiconductor light emitting element 有权
标题翻译：半导体发光元件
公开(公告)号：US08592853B2
公开(公告)日：2013-11-26
申请号：US13218338
申请日：2011-08-25
申请人： Hidetoshi Tanaka , Keiji Emura
发明人： Hidetoshi Tanaka , Keiji Emura
IPC分类号： H01L33/62
CPC分类号： H01L33/38 , H01L33/0079 , H01L33/22 , H01L33/44 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor light emitting element includes: a semiconductor layer; first electrodes arranged in a staggered array on an upper surface of the semiconductor layer; and a second electrode on a lower surface of the semiconductor layer. Each first electrode includes an external connection, a first elongated portion which extends from the external connection toward a central region of the upper surface of the semiconductor layer, and a second elongated portion which extends from the external connection to a near-edge region of the semiconductor layer. In addition, the first electrodes are arrayed so that a near-tip part of the first elongated portion of each first electrode is opposed to a near-tip part of the first elongated portion of each of an adjacent one or ones of the first electrodes in a direction in which the first electrodes arranged, on the central region of the semiconductor layer.
摘要翻译：半导体发光元件包括：半导体层; 在半导体层的上表面上布置成交错排列的第一电极; 以及在半导体层的下表面上的第二电极。每个第一电极包括外部连接，从外部连接朝向半导体层的上表面的中心区域延伸的第一细长部分和从外部连接延伸到第二细长部分的近边缘区域的第二细长部分半导体层。此外，第一电极排列成使得每个第一电极的第一细长部分的近尖端部分与相邻的一个或多个第一电极中的每一个的第一细长部分的近端部分相对，第一电极在半导体层的中心区域上排列的方向。

8. 外观设计

USD674356S1 Light emitting diode chip 有权
公开(公告)号：USD674356S1
公开(公告)日：2013-01-15
申请号：US29397828
申请日：2011-07-21
申请人： Yoshiki Inoue , Keiji Emura
设计人： Yoshiki Inoue , Keiji Emura

9. 发明授权

US08592954B2 Semiconductor element and method of manufacturing the semiconductor element 有权
标题翻译：半导体元件及半导体元件的制造方法
公开(公告)号：US08592954B2
公开(公告)日：2013-11-26
申请号：US13171303
申请日：2011-06-28
申请人： Keiji Emura , Fumihiro Inoue
发明人： Keiji Emura , Fumihiro Inoue
IPC分类号： H01L29/02
CPC分类号： H01L33/44 , H01L23/3185 , H01L23/3192 , H01L24/05 , H01L33/38 , H01L33/40 , H01L2224/0401 , H01L2224/05567 , H01L2224/05669 , H01L2224/06102 , H01L2933/0016 , H01L2924/00014
摘要： A semiconductor element includes a semiconductor layer, an electrode, an adhesion layer, and an insulating layer. The electrode is disposed over the semiconductor layer and has a first upper surface and a second upper surface disposed further away from the semiconductor layer than the first upper surface. The adhesion layer is disposed on the first upper surface of the electrode so that the second upper surface of the electrode is disposed further away from the semiconductor layer than an upper surface of the adhesion layer. The insulating layer covers from the upper surface of the adhesion layer to the semiconductor layer.
摘要翻译：半导体元件包括半导体层，电极，粘合层和绝缘层。电极设置在半导体层之上，并且具有比第一上表面更远离半导体层的第一上表面和第二上表面。粘合层设置在电极的第一上表面上，使得电极的第二上表面比粘附层的上表面更远离半导体层设置。绝缘层从粘合层的上表面覆盖到半导体层。

10. 发明申请

US20120049238A1 SEMICONDUCTOR LIGHT EMITTING ELEMENT 有权
标题翻译：半导体发光元件
公开(公告)号：US20120049238A1
公开(公告)日：2012-03-01
申请号：US13218338
申请日：2011-08-25
申请人： Hidetoshi TANAKA , Keiji Emura
发明人： Hidetoshi TANAKA , Keiji Emura
IPC分类号： H01L33/62
CPC分类号： H01L33/38 , H01L33/0079 , H01L33/22 , H01L33/44 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor light emitting element includes: a semiconductor layer; first electrodes arranged in a staggered array on an upper surface of the semiconductor layer; and a second electrode on a lower surface of the semiconductor layer. Each first electrode includes an external connection, a first elongated portion which extends from the external connection toward a central region of the upper surface of the semiconductor layer, and a second elongated portion which extends from the external connection to a near-edge region of the semiconductor layer. In addition, the first electrodes are arrayed so that a near-tip part of the first elongated portion of each first electrode is opposed to a near-tip part of the first elongated portion of each of an adjacent one or ones of the first electrodes in a direction in which the first electrodes arranged, on the central region of the semiconductor layer.
摘要翻译：半导体发光元件包括：半导体层; 在半导体层的上表面上布置成交错排列的第一电极; 以及在半导体层的下表面上的第二电极。每个第一电极包括外部连接，从外部连接朝向半导体层的上表面的中心区域延伸的第一细长部分和从外部连接延伸到第二细长部分的近边缘区域的第二细长部分半导体层。此外，第一电极被排列成使得每个第一电极的第一细长部分的近尖端部分与相邻的一个或多个第一电极中的每一个的第一细长部分的近尖端部分相对，第一电极在半导体层的中心区域上排列的方向。

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