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1. 发明申请

US20110233596A1 SEMICONDUCTOR LIGHT EMITTING ELEMENT 有权
标题翻译：半导体发光元件
公开(公告)号：US20110233596A1
公开(公告)日：2011-09-29
申请号：US13155045
申请日：2011-06-07
申请人： Masahiko SANO , Takahiko Sakamoto , Keiji Emura , Katsuyoshi Kadan
发明人： Masahiko SANO , Takahiko Sakamoto , Keiji Emura , Katsuyoshi Kadan
IPC分类号： H01L33/42
CPC分类号： H01L33/38 , H01L33/02 , H01L33/405 , H01L33/42 , H01L33/44 , H01L33/46 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/49107 , H01L2224/73265 , H01L2924/00014 , H01L2924/00
摘要： The present invention provides a light emitting element capable or realizing at least one of lower resistance, higher output, higher power efficiency (1 m/W), higher mass productivity and lower cost of the element using a light transmissive electrode for an electrode arranged exterior to the light emitting structure. A semiconductor light emitting element includes a light emitting section, a first electrode and a second electrode on a semiconductor structure including first and second conductive type semiconductor layers, the first and the second electrodes respectively including at least two layers of a first layer of a light transmissive conductive film conducting to the first and the second conductive type semiconductor and a second layer arranged so as to conduct with the first layer. First and second light transmissive insulating films are respectively arranged so as to overlap at least one part of the first and the second layers.
摘要翻译：本发明提供一种发光元件，其能够或实现使用用于布置在外部的电极的透光电极的元件的较低电阻，较高输出，更高功率效率（1m / W），更高的批量生产率和更低的成本中的至少一个到发光结构。半导体发光元件包括在包括第一和第二导电类型半导体层的半导体结构上的发光部分，第一电极和第二电极，第一和第二电极分别包括至少两层第一层光导电到第一和第二导电类型半导体的透射导电膜和布置成与第一层导通的第二层。第一和第二透光绝缘膜分别布置成与第一层和第二层的至少一部分重叠。

2. 发明申请

US20080185606A1 Semiconductor light emitting element 有权
标题翻译：半导体发光元件
公开(公告)号：US20080185606A1
公开(公告)日：2008-08-07
申请号：US12068019
申请日：2008-01-31
申请人： Masahiko Sano , Takahiko Sakamoto , Keiji Emura , Katsuyoshi Kadan
发明人： Masahiko Sano , Takahiko Sakamoto , Keiji Emura , Katsuyoshi Kadan
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/02 , H01L33/405 , H01L33/42 , H01L33/44 , H01L33/46 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/49107 , H01L2224/73265 , H01L2924/00014 , H01L2924/00
摘要： The present invention provides a light emitting element capable or realizing at least one of, preferably, most of lower resistance, higher output, higher power efficiency (1 m/W), higher mass productivity and lower cost of the element using a light transmissive electrode for an electrode arranged exterior to the light emitting structure.A semiconductor light emitting element including a light emitting section, a first electrode, and a second electrode on a semiconductor structure including first and second conductive type semiconductor layers, the first and the second electrodes being arranged on the first conductive type semiconductor layer and a second conductive type semiconductor layer of the light emitting section, respectively; and a light transmissive insulating film formed on at least one part of the second conductive type semiconductor layer; wherein the second electrode includes a first layer of a light transmissive conductive film for covering at least one part of the second conductive type semiconductor layer and a second layer which is arranged on at least one part of the light transmissive insulating film and which conducts to the first layer; a light reflecting part is formed on a surface side of the first layer, and a boundary region of the light transmissive insulating film and the semiconductor structure; and the second layer side surface of the light transmissive insulating film is distant from the semiconductor structure than the surface of the first layer is provided.
摘要翻译：本发明提供一种能够或实现低电阻，更高输出，更高功率效率（1m / W），更高的批量生产率和使用透光电极的元件的成本中的至少一个，优选地大多数的发光元件用于布置在发光结构外部的电极。一种半导体发光元件，包括在包括第一和第二导电类型半导体层的半导体结构上的发光部分，第一电极和第二电极，所述第一和第二电极布置在第一导电类型半导体层上，导电型半导体层; 以及形成在所述第二导电类型半导体层的至少一部分上的透光绝缘膜; 其中所述第二电极包括用于覆盖所述第二导电类型半导体层的至少一部分的透光导电膜的第一层和布置在所述透光绝缘膜的至少一部分上的第二层，第一层; 在第一层的表面侧和透光性绝缘膜与半导体结构的边界区域形成有光反射部，并且提供透光绝缘膜的第二层侧表面比第一层的表面远离半导体结构。

3. 发明授权

US08120057B2 Semiconductor light emitting element 有权
标题翻译：半导体发光元件
公开(公告)号：US08120057B2
公开(公告)日：2012-02-21
申请号：US13155045
申请日：2011-06-07
申请人： Masahiko Sano , Takahiko Sakamoto , Keiji Emura , Katsuyoshi Kadan
发明人： Masahiko Sano , Takahiko Sakamoto , Keiji Emura , Katsuyoshi Kadan
IPC分类号： H01L51/40
CPC分类号： H01L33/38 , H01L33/02 , H01L33/405 , H01L33/42 , H01L33/44 , H01L33/46 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/49107 , H01L2224/73265 , H01L2924/00014 , H01L2924/00
摘要： The present invention provides a light emitting element capable or realizing at least one of lower resistance, higher output, higher power efficiency (1 m/W), higher mass productivity and lower cost of the element using a light transmissive electrode for an electrode arranged exterior to the light emitting structure. A semiconductor light emitting element includes a light emitting section, a first electrode and a second electrode on a semiconductor structure including first and second conductive type semiconductor layers, the first and the second electrodes respectively including at least two layers of a first layer of a light transmissive conductive film conducting to the first and the second conductive type semiconductor and a second layer arranged so as to conduct with the first layer. First and second light transmissive insulating films are respectively arranged so as to overlap at least one part of the first and the second layers.
摘要翻译：本发明提供一种发光元件，其能够或实现使用用于布置在外部的电极的透光电极的元件的较低电阻，较高输出，更高功率效率（1m / W），更高的批量生产率和更低的成本中的至少一个到发光结构。半导体发光元件包括在包括第一和第二导电类型半导体层的半导体结构上的发光部分，第一电极和第二电极，第一和第二电极分别包括至少两层第一层光导电到第一和第二导电类型半导体的透射导电膜和布置成与第一层导通的第二层。第一和第二透光绝缘膜分别布置成与第一层和第二层的至少一部分重叠。

4. 发明授权

US07982236B2 Semiconductor light emitting element 有权
标题翻译：半导体发光元件
公开(公告)号：US07982236B2
公开(公告)日：2011-07-19
申请号：US12068019
申请日：2008-01-31
申请人： Masahiko Sano , Takahiko Sakamoto , Keiji Emura , Katsuyoshi Kadan
发明人： Masahiko Sano , Takahiko Sakamoto , Keiji Emura , Katsuyoshi Kadan
IPC分类号： H01L29/43
CPC分类号： H01L33/38 , H01L33/02 , H01L33/405 , H01L33/42 , H01L33/44 , H01L33/46 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/49107 , H01L2224/73265 , H01L2924/00014 , H01L2924/00
摘要： The present invention provides a light emitting element capable or realizing at least one of lower resistance, higher output, higher power efficiency (1m/W), higher mass productivity and lower cost of the element using a light transmissive electrode for an electrode arranged exterior to the light emitting structure. A semiconductor light emitting element includes a light emitting section, a first electrode and a second electrode on a semiconductor structure including first and second conductive type semiconductor layers, the first and the second electrodes respectively including at least two layers of a first layer of a light transmissive conductive film conducting to the first and the second conductive type semiconductor and a second layer arranged so as to conduct with the first layer. First and second light transmissive insulating films are respectively arranged so as to overlap at least one part of the first and the second layers.
摘要翻译：本发明提供一种发光元件，其能够或实现使用用于布置在外部的电极的透光电极的元件的较低电阻，更高输出，更高功率效率（1m / W），更高的批量生产率和更低的成本中的至少一个发光结构。半导体发光元件包括在包括第一和第二导电类型半导体层的半导体结构上的发光部分，第一电极和第二电极，第一和第二电极分别包括至少两层第一层光导电到第一和第二导电类型半导体的透射导电膜和布置成与第一层导通的第二层。第一和第二透光绝缘膜分别布置成与第一层和第二层的至少一部分重叠。

5. 发明授权

US08461617B2 Semiconductor light emitting element and semiconductor light emitting device 有权
标题翻译：半导体发光元件及半导体发光元件
公开(公告)号：US08461617B2
公开(公告)日：2013-06-11
申请号：US13060951
申请日：2009-08-28
申请人： Katsuyoshi Kadan , Yoshiki Inoue
发明人： Katsuyoshi Kadan , Yoshiki Inoue
IPC分类号： H01L33/08
CPC分类号： H01L33/42 , H01L25/0753 , H01L27/15 , H01L27/153 , H01L33/20 , H01L33/32 , H01L33/38 , H01L33/382 , H01L33/40 , H01L2224/45144 , H01L2224/48091 , H01L2924/12032 , H01L2933/0016 , H01L2933/0025 , H01L2924/00
摘要： Provided is a semiconductor light emitting element wherein generation of an open failure of the light emitting device can be eliminated by ensuring a current pathway when disconnection is generated in a transparent electrode layer. A semiconductor light emitting element (10) is provided with: a first semiconductor layer (12) on a substrate (11); a light emitting layer (13) on the first semiconductor layer (12); a second semiconductor layer (14) on the light emitting layer (13); an insulator layer (15) provided with a hole portion (19) in a partial region on the second semiconductor layer (14); a transparent electrode layer (16) covering the upper surface of the insulator layer (15) and the second semiconductor layer (14) without covering the hole portion (19); and a second pad electrode (18) brought into contact with the second semiconductor layer (14) through the hole portion (19) and faces the insulator layer (15) with the transparent electrode layer (16) therebetween. Contact resistance between the second pad electrode (18) and the second semiconductor layer (14) is set larger than that between the transparent electrode layer (16) and the second semiconductor layer (14).
摘要翻译：提供了一种半导体发光元件，其中通过在透明电极层中产生断开而确保电流通路，可以消除发光器件的开路故障的产生。半导体发光元件（10）具有：在基板（11）上的第一半导体层（12）; 在所述第一半导体层（12）上的发光层（13）; 在所述发光层（13）上的第二半导体层（14）; 绝缘体层（15），其在所述第二半导体层（14）上的部分区域中设置有孔部分（19）; 覆盖绝缘体层（15）的上表面的透明电极层（16）和不覆盖孔部分（19）的第二半导体层（14）; 以及通过所述孔部（19）与所述第二半导体层（14）接触并与所述绝缘体层（15）面对的第二焊盘电极（18），所述第二焊盘电极与所述第二半导体层接触。第二焊盘电极（18）和第二半导体层（14）之间的接触电阻被设定为大于透明电极层（16）和第二半导体层（14）之间的接触电阻。

6. 发明申请

US20110156065A1 SEMICONDUCTOR LIGHT EMITTING ELEMENT AND SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：半导体发光元件和半导体发光器件
公开(公告)号：US20110156065A1
公开(公告)日：2011-06-30
申请号：US13060951
申请日：2009-08-28
申请人： Katsuyoshi Kadan , Yoshiki Inoue
发明人： Katsuyoshi Kadan , Yoshiki Inoue
IPC分类号： H01L33/08 , H01L33/42
CPC分类号： H01L33/42 , H01L25/0753 , H01L27/15 , H01L27/153 , H01L33/20 , H01L33/32 , H01L33/38 , H01L33/382 , H01L33/40 , H01L2224/45144 , H01L2224/48091 , H01L2924/12032 , H01L2933/0016 , H01L2933/0025 , H01L2924/00
摘要： Provided is a semiconductor light emitting element wherein generation of an open failure of the light emitting device can be eliminated by ensuring a current pathway when disconnection is generated in a transparent electrode layer. A semiconductor light emitting element (10) is provided with: a first semiconductor layer (12) on a substrate (11); a light emitting layer (13) on the first semiconductor layer (12); a second semiconductor layer (14) on the light emitting layer (13); an insulator layer (15) provided with a hole portion (19) in a partial region on the second semiconductor layer (14); a transparent electrode layer (16) covering the upper surface of the insulator layer (15) and the second semiconductor layer (14) without covering the hole portion (19); and a second pad electrode (18) brought into contact with the second semiconductor layer (14) through the hole portion (19) and faces the insulator layer (15) with the transparent electrode layer (16) therebetween. Contact resistance between the second pad electrode (18) and the second semiconductor layer (14) is set larger than that between the transparent electrode layer (16) and the second semiconductor layer (14).
摘要翻译：提供了一种半导体发光元件，其中通过在透明电极层中产生断开而确保电流通路，可以消除发光器件的开路故障的产生。半导体发光元件（10）具有：在基板（11）上的第一半导体层（12）; 在所述第一半导体层（12）上的发光层（13）; 在所述发光层（13）上的第二半导体层（14）; 绝缘体层（15），其在所述第二半导体层（14）上的部分区域中设置有孔部分（19）; 覆盖绝缘体层（15）的上表面的透明电极层（16）和不覆盖孔部分（19）的第二半导体层（14）; 以及通过所述孔部（19）与所述第二半导体层（14）接触并与所述绝缘体层（15）面对的第二焊盘电极（18），所述第二焊盘电极与所述第二半导体层接触。第二焊盘电极（18）和第二半导体层（14）之间的接触电阻被设定为大于透明电极层（16）和第二半导体层（14）之间的接触电阻。

7. 发明授权

US09012936B2 Sapphire substrate having triangular projections with portions extending in direction of substrate crystal axis 有权
标题翻译：蓝宝石衬底具有三个具有沿衬底晶轴方向延伸的部分的凸起
公开(公告)号：US09012936B2
公开(公告)日：2015-04-21
申请号：US13204317
申请日：2011-08-05
申请人： Junya Narita , Takuya Okada , Yohei Wakai , Yoshiki Inoue , Naoya Sako , Katsuyoshi Kadan
发明人： Junya Narita , Takuya Okada , Yohei Wakai , Yoshiki Inoue , Naoya Sako , Katsuyoshi Kadan
IPC分类号： H01L21/02 , H01L33/10 , H01L33/00 , H01L33/20 , H01L33/32
CPC分类号： H01L33/22 , H01L21/0242 , H01L21/0243 , H01L21/02458 , H01L21/0254 , H01L33/007 , H01L33/10 , H01L33/20 , H01L33/32 , Y10T428/24 , Y10T428/24479
摘要： The sapphire substrate has a principal surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device and comprising a plurality of projections of the principal surface, wherein an outer periphery of a bottom surface of each of the projections has at least one depression. This depression is in the horizontal direction. The plurality of projections are arranged so that a straight line passes through the inside of at least any one of projections when the straight line is drawn at any position in any direction in a plane including the bottom surfaces of the plurality of projections.
摘要翻译：蓝宝石衬底具有用于生长氮化物半导体以形成氮化物半导体发光器件的主表面，并且包括主表面的多个突起，其中每个突起的底表面的外周具有至少一个凹陷。这个凹陷在水平方向。多个突起被布置成使得当直线在包括多个突起的底表面的平面的任何方向上的任何位置处被拉伸时，直线穿过至少任一个突起的内部。

8. 发明申请

US20120074431A1 SAPPHIRE SUBSTRATE AND SEMICONDUCTOR 有权
标题翻译： SAPPHIRE底物和半导体
公开(公告)号：US20120074431A1
公开(公告)日：2012-03-29
申请号：US13204317
申请日：2011-08-05
申请人： Junya NARITA , Takuya Okada , Yohei Wakai , Yoshiki Inoue , Naoya Sako , Katsuyoshi Kadan
发明人： Junya NARITA , Takuya Okada , Yohei Wakai , Yoshiki Inoue , Naoya Sako , Katsuyoshi Kadan
IPC分类号： H01L33/32
CPC分类号： H01L33/22 , H01L21/0242 , H01L21/0243 , H01L21/02458 , H01L21/0254 , H01L33/007 , H01L33/10 , H01L33/20 , H01L33/32 , Y10T428/24 , Y10T428/24479
摘要： The sapphire substrate has a principal surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device and comprising a plurality of projections of the principal surface, wherein an outer periphery of a bottom surface of each of the projections has at least one depression. This depression is in the horizontal direction. The plurality of projections are arranged so that a straight line passes through the inside of at least any one of projections when the straight line is drawn at any position in any direction in a plane including the bottom surfaces of the plurality of projections.
摘要翻译：蓝宝石衬底具有用于生长氮化物半导体以形成氮化物半导体发光器件的主表面，并且包括主表面的多个突起，其中每个突起的底表面的外周具有至少一个凹陷。这个凹陷在水平方向。多个突起被布置成使得当直线在包括多个突起的底表面的平面的任何方向上的任何位置处被拉伸时，直线穿过至少任一个突起的内部。

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