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1. 发明授权

US08735177B2 Diagnostic marker 有权
标题翻译：诊断标记
公开(公告)号：US08735177B2
公开(公告)日：2014-05-27
申请号：US11918465
申请日：2007-02-20
申请人： Shinji Sakuma , Shinji Yamashita , Ken-Ichiro Hiwatari , Yoshikazu Shoji
发明人： Shinji Sakuma , Shinji Yamashita , Ken-Ichiro Hiwatari , Yoshikazu Shoji
IPC分类号： G01N33/547 , G01N33/544
CPC分类号： A61K49/0039 , A61K49/0002 , A61K49/0043 , A61K49/0052 , A61K49/0056 , A61K49/0093
摘要： A diagnostic marker is composed of particles that have a diameter of from 1 nm to 100 μm, the particles possessing on their surfaces a site that has a high specific bonding ability to a specific antigen residing on the mucosa of digestive cancers and a site that has a low bonding ability to the mucosa of digestive organs, and further incorporating an identification material.
摘要翻译：诊断标记由直径为1nm至100μm的颗粒组成，颗粒在其表面上具有与存在于消化性癌症粘膜上的特异性抗原具有高特异性结合能力的位点，以及具有对消化器官粘膜的粘合能力低，并进一步掺入鉴定材料。

2. 发明授权

US07939614B2 Silicon-containing curing composition and heat cured product thereof 有权
标题翻译：含硅固化性组合物以及它们的热固化产物
公开(公告)号：US07939614B2
公开(公告)日：2011-05-10
申请号：US10594221
申请日：2005-05-10
申请人： Takashi Sueyoshi , Ken-Ichiro Hiwatari , Tadashi Janado , Yoshikazu Shoji , Yoshitaka Sugawara
发明人： Takashi Sueyoshi , Ken-Ichiro Hiwatari , Tadashi Janado , Yoshikazu Shoji , Yoshitaka Sugawara
IPC分类号： C08G77/04 , C08G77/12 , C08G77/14 , C08G77/20
CPC分类号： C08L83/04 , C08G77/12 , C08G77/14 , C08G77/18 , C08G77/20 , C08G77/70 , C08L83/00
摘要： A curable composition which comprises at least one of the following (A), (B), and (C) and further contains (D) (provided that when (C) is not contained, both (A) and (B) are in the composition. (A): A silicon-containing polymer in which the content of components having a weight-average molecular weight of 1,000 or lower is 20 wt. % or lower and which has a reactive group A′ and one or more Si—O—Si bonds. (B): A silicon-containing polymer in which the content of components having a weight-average molecular weight of 1,000 or lower is 20 wt. % or lower and which has an Si—H group and one or more Si—O—Si bonds. (C): A silicon-containing polymer in which the content of components having a weight-average molecular weight of 1,000 or lower is 20 wt. % or lower and which has a reactive group A′, an Si—H group, and one or more Si—O—Si bonds. (D): A catalyst for curing reaction which is a platinum catalyst. The reactive group A′ is any of Si—R1, Si—O—R2, and Si—R3—OCOC(R4)═CH2, provided that R1 and R2 each is alkenyl, R3 is alkylene and/or arylene, and R4 is hydrogen or methyl.
摘要翻译：一种可固化的组合物，其包含以下的（A）中的至少一种，（B），和（C），还含有（D）（条件是当（C）不包含，无论（A）和（B）是在该组合物（A）：含硅聚合物，其中具有1,000或更低的重均分子量成分的含量为20重量％或更低，其中有一个反应性基团A'和一个或多个SI- O-Si键（B）：A含硅聚合物，其中具有1,000或更低的重均分子量成分的含量为20重量％或更低，其具有Si-H基和一个或多个 Si-O-Si键（C）：其中重均分子量为1,000以下的成分的含量为20重量％以下且具有反应性基团A'的含硅聚合物， Si-H基和一个或多个Si-O-Si键;（D）：作为铂催化剂的用于固化反应的催化剂，反应性基团A'是Si-R 1，Si-O-R 2和的Si-R3 OCOC（R 4）═CH2，条件是R1和R2各自是链烯基，R 3是亚烷基和/或亚芳基，并且R 4是氢或甲基。

3. 发明申请

US20070262472A1 High Withstand Voltage Semiconductor Device Covered with Resin and Manufacturing Method Therefor 审中-公开
标题翻译：树脂覆盖的高耐压半导体器件及其制造方法
公开(公告)号：US20070262472A1
公开(公告)日：2007-11-15
申请号：US11664586
申请日：2005-10-05
申请人： Shinichi Okada , Yoshitaka Sugawara , Katsunori Asano , Daisuke Takayama , Yoshikazu Shoji , Tadashi Janado , Takashi Sueyoshi , Ken-Ichiro Hiwatari
发明人： Shinichi Okada , Yoshitaka Sugawara , Katsunori Asano , Daisuke Takayama , Yoshikazu Shoji , Tadashi Janado , Takashi Sueyoshi , Ken-Ichiro Hiwatari
IPC分类号： H01L23/29 , H01L21/56
CPC分类号： H01L23/24 , H01L23/296 , H01L23/3121 , H01L24/48 , H01L2224/48137 , H01L2224/4823 , H01L2224/8592 , H01L2924/00014 , H01L2924/01004 , H01L2924/01078 , H01L2924/10272 , H01L2924/1305 , H01L2924/13055 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A high withstand voltage semiconductor chip mounted on a package or a board is covered with a sealing resin, and the resin is cured while a high voltage is applied between at least one of electrode terminals connected from a chip electrode or the chip via wiring of wires or the like and another electrode that necessitates a dielectric withstand voltage between the electrode and the electrode terminal during the curing. The sealing resin is provided by a synthetic high molecular compound structured in a manner that an organic silicon polymer C is constituted by alternately linearly linking an organic silicon polymer A having a crosslinking structure of siloxane with an organic silicon polymer B having a linear link structure of siloxane (Si—O—Si bond) by siloxane bond and the polymers are three-dimensionally linked together by covalent bond. With this arrangement, a dielectric withstand voltage capability, which is stable by suppression of an increase in the leakage current even when a high reverse voltage is applied and agrees with the designed value, can be obtained in a high withstand voltage semiconductor chip that is mounted on a board or a package and sealed with the resin.
摘要翻译：安装在封装或板上的高耐压半导体芯片被密封树脂覆盖，并且在从芯片电极连接的至少一个电极端子或芯片之间施加高电压而使树脂固化，或类似物以及在固化期间必须在电极和电极端子之间具有介电耐受电压的另一电极。密封树脂由合成的高分子化合物提供，所述合成高分子化合物以有机硅聚合物C通过将具有硅氧烷的交联结构的有机硅聚合物A与具有硅氧烷的交联结构的有机硅聚合物A与具有直链结构通过硅氧烷键的硅氧烷（Si-O-Si键），并且聚合物通过共价键三维连接在一起。通过这种布置，即使在施加高的反向电压并且与设计值一致的情况下也可以通过抑制漏电流的增加而稳定的介电耐受电压能力可以在安装的高耐压半导体芯片中获得在纸板或包装上，并用树脂密封。

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