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1. 发明申请

US20070262472A1 High Withstand Voltage Semiconductor Device Covered with Resin and Manufacturing Method Therefor 审中-公开
标题翻译：树脂覆盖的高耐压半导体器件及其制造方法
公开(公告)号：US20070262472A1
公开(公告)日：2007-11-15
申请号：US11664586
申请日：2005-10-05
申请人： Shinichi Okada , Yoshitaka Sugawara , Katsunori Asano , Daisuke Takayama , Yoshikazu Shoji , Tadashi Janado , Takashi Sueyoshi , Ken-Ichiro Hiwatari
发明人： Shinichi Okada , Yoshitaka Sugawara , Katsunori Asano , Daisuke Takayama , Yoshikazu Shoji , Tadashi Janado , Takashi Sueyoshi , Ken-Ichiro Hiwatari
IPC分类号： H01L23/29 , H01L21/56
CPC分类号： H01L23/24 , H01L23/296 , H01L23/3121 , H01L24/48 , H01L2224/48137 , H01L2224/4823 , H01L2224/8592 , H01L2924/00014 , H01L2924/01004 , H01L2924/01078 , H01L2924/10272 , H01L2924/1305 , H01L2924/13055 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A high withstand voltage semiconductor chip mounted on a package or a board is covered with a sealing resin, and the resin is cured while a high voltage is applied between at least one of electrode terminals connected from a chip electrode or the chip via wiring of wires or the like and another electrode that necessitates a dielectric withstand voltage between the electrode and the electrode terminal during the curing. The sealing resin is provided by a synthetic high molecular compound structured in a manner that an organic silicon polymer C is constituted by alternately linearly linking an organic silicon polymer A having a crosslinking structure of siloxane with an organic silicon polymer B having a linear link structure of siloxane (Si—O—Si bond) by siloxane bond and the polymers are three-dimensionally linked together by covalent bond. With this arrangement, a dielectric withstand voltage capability, which is stable by suppression of an increase in the leakage current even when a high reverse voltage is applied and agrees with the designed value, can be obtained in a high withstand voltage semiconductor chip that is mounted on a board or a package and sealed with the resin.
摘要翻译：安装在封装或板上的高耐压半导体芯片被密封树脂覆盖，并且在从芯片电极连接的至少一个电极端子或芯片之间施加高电压而使树脂固化，或类似物以及在固化期间必须在电极和电极端子之间具有介电耐受电压的另一电极。密封树脂由合成的高分子化合物提供，所述合成高分子化合物以有机硅聚合物C通过将具有硅氧烷的交联结构的有机硅聚合物A与具有硅氧烷的交联结构的有机硅聚合物A与具有直链结构通过硅氧烷键的硅氧烷（Si-O-Si键），并且聚合物通过共价键三维连接在一起。通过这种布置，即使在施加高的反向电压并且与设计值一致的情况下也可以通过抑制漏电流的增加而稳定的介电耐受电压能力可以在安装的高耐压半导体芯片中获得在纸板或包装上，并用树脂密封。

2. 发明申请

US20070197755A1 Silicon-containing curing composition and heat cured product thereof 有权
标题翻译：含硅固化组合物及其热固化产物
公开(公告)号：US20070197755A1
公开(公告)日：2007-08-23
申请号：US10594221
申请日：2005-05-10
申请人： Takashi Sueyoshi , Ken-ichiro Hiwatari , Tadashi Janado , Yoshikazu Shoji , Yoshitaka Sugawara
发明人： Takashi Sueyoshi , Ken-ichiro Hiwatari , Tadashi Janado , Yoshikazu Shoji , Yoshitaka Sugawara
IPC分类号： C08L83/04 , C08G77/04
CPC分类号： C08L83/04 , C08G77/12 , C08G77/14 , C08G77/18 , C08G77/20 , C08G77/70 , C08L83/00
摘要： A curable composition which comprises at least one of the following (A), (B), and (C) and further contains the following (D) (provided that when (C) is not contained, both (A) and (B) are contained). (A): A silicon-containing polymer in which the content of components having a weight-average molecular weight of 1,000 or lower is 20 wt. % or lower and which has a reactive group A′ and one or more Si—O—Si bonds. (B): A silicon-containing polymer in which the content of components having a weight-average molecular weight of 1,000 or lower is 20 wt. % or lower and which has an Si—H group and one or more Si—O—Si bonds. (C): A silicon-containing polymer in which the content of components having a weight-average molecular weight of 1,000 or lower is 20 wt. % or lower and which has a reactive group A′, an Si—H group, and one or more Si—O—Si bonds. (D): A catalyst for curing reaction which is a platinum catalyst. The reactive group A′ is any of Si—R1, Si—O—R2, and Si—R3—OCOC(R4)═CH2, provided that R1 and R2 each is alkenyl, R3 is alkylene and/or arylene, and R4 is hydrogen or methyl.
摘要翻译：包含以下（A），（B）和（C）中的至少一个的可固化组合物，并且还包含以下（D）（前提是不含（C）时，（A）和（B）被包含）。（A）：重均分子量为1000以下的成分的含量为20重量％的含硅聚合物。％以下，具有反应性基团A'和一个或多个Si-O-Si键。（B）：重均分子量为1000以下的成分的含量为20重量％的含硅聚合物。％以下，并且具有Si-H基和一个或多个Si-O-Si键。（C）：重均分子量为1000以下的成分的含量为20重量％的含硅聚合物。％以下，具有反应性基团A'，Si-H基和一个或多个Si-O-Si键。（D）：铂催化剂用于固化反应的催化剂。反应性基团A'是Si-R 1，Si-OR 2和Si-R 3 -OCOC（R SUP）中的任何一种 > 4 ） - CH 2，条件是R 1和R 2各自为烯基，R 3， SUP>是亚烷基和/或亚芳基，R 4是氢或甲基。

3. 发明授权

US08003736B2 Silicon-containing compound, curable composition and cured product 失效
标题翻译：含硅化合物，固化性组合物和固化物
公开(公告)号：US08003736B2
公开(公告)日：2011-08-23
申请号：US12596933
申请日：2008-04-21
申请人： Takashi Sueyoshi , Ken-ichiro Hiwatari , Tadashi Janado , Yoshikazu Shoji , Seiichi Saito , Yoshitaka Sugawara
发明人： Takashi Sueyoshi , Ken-ichiro Hiwatari , Tadashi Janado , Yoshikazu Shoji , Seiichi Saito , Yoshitaka Sugawara
IPC分类号： C08F283/00
CPC分类号： C08G77/50 , C08L83/14 , C08L83/00
摘要： A silicon-containing compound of formula (1), and a curing composition containing a silicon-containing compound of formula (1) wherein Z is hydrogen, a silicon-containing compound of formula (1) wherein Z is C2-C4 alkenyl or alkynyl and a hydrosilylation catalyst. The composition has excellent handling and curing properties and provides a cured product with excellent heat resistance and flexibility. In formula (1), Ra-Rg=C1-C12 saturated aliphatic hydrocarbon group or C6-C12 aromatic hydrocarbon group. Re and Rf do not simultaneously represent C1-C12 saturated aliphatic hydrocarbon group; Y=C2-C4 alkylene; Z=hydrogen or C2-C4 alkenyl or alkynyl; K is 2-7; T is 1-7; P is 0-3; and M and N are numbers selected such that N:M=1:1 to 1:100, that all M's and N's total at least 15, and that the mass average molecular weight of the compound of formula (1) is 3,000 to 1,000,000.
摘要翻译：一种式（1）的含硅化合物和含有其中Z是氢的式（1）的含硅化合物的固化组合物，其中Z是C 2 -C 4烯基或炔基的式（1）的含硅化合物和氢化硅烷化催化剂。该组合物具有优异的处理和固化性能，并提供具有优异的耐热性和柔韧性的固化产物。在式（1）中，Ra-Rg = C1-C12饱和脂族烃基或C6-C12芳族烃基。 Re和Rf不同时代表C1-C12饱和脂族烃基; Y = C2-C4亚烷基; Z =氢或C 2 -C 4烯基或炔基; K为2-7; T为1-7; P为0-3; 并且M和N是选择为N:M = 1:1至1:100的数字，所有M和N的总数至少为15，并且式（1）化合物的质均分子量为3,000至1,000,000 。

4. 发明授权

US07939614B2 Silicon-containing curing composition and heat cured product thereof 有权
标题翻译：含硅固化性组合物以及它们的热固化产物
公开(公告)号：US07939614B2
公开(公告)日：2011-05-10
申请号：US10594221
申请日：2005-05-10
申请人： Takashi Sueyoshi , Ken-Ichiro Hiwatari , Tadashi Janado , Yoshikazu Shoji , Yoshitaka Sugawara
发明人： Takashi Sueyoshi , Ken-Ichiro Hiwatari , Tadashi Janado , Yoshikazu Shoji , Yoshitaka Sugawara
IPC分类号： C08G77/04 , C08G77/12 , C08G77/14 , C08G77/20
CPC分类号： C08L83/04 , C08G77/12 , C08G77/14 , C08G77/18 , C08G77/20 , C08G77/70 , C08L83/00
摘要： A curable composition which comprises at least one of the following (A), (B), and (C) and further contains (D) (provided that when (C) is not contained, both (A) and (B) are in the composition. (A): A silicon-containing polymer in which the content of components having a weight-average molecular weight of 1,000 or lower is 20 wt. % or lower and which has a reactive group A′ and one or more Si—O—Si bonds. (B): A silicon-containing polymer in which the content of components having a weight-average molecular weight of 1,000 or lower is 20 wt. % or lower and which has an Si—H group and one or more Si—O—Si bonds. (C): A silicon-containing polymer in which the content of components having a weight-average molecular weight of 1,000 or lower is 20 wt. % or lower and which has a reactive group A′, an Si—H group, and one or more Si—O—Si bonds. (D): A catalyst for curing reaction which is a platinum catalyst. The reactive group A′ is any of Si—R1, Si—O—R2, and Si—R3—OCOC(R4)═CH2, provided that R1 and R2 each is alkenyl, R3 is alkylene and/or arylene, and R4 is hydrogen or methyl.
摘要翻译：一种可固化的组合物，其包含以下的（A）中的至少一种，（B），和（C），还含有（D）（条件是当（C）不包含，无论（A）和（B）是在该组合物（A）：含硅聚合物，其中具有1,000或更低的重均分子量成分的含量为20重量％或更低，其中有一个反应性基团A'和一个或多个SI- O-Si键（B）：A含硅聚合物，其中具有1,000或更低的重均分子量成分的含量为20重量％或更低，其具有Si-H基和一个或多个 Si-O-Si键（C）：其中重均分子量为1,000以下的成分的含量为20重量％以下且具有反应性基团A'的含硅聚合物， Si-H基和一个或多个Si-O-Si键;（D）：作为铂催化剂的用于固化反应的催化剂，反应性基团A'是Si-R 1，Si-O-R 2和的Si-R3 OCOC（R 4）═CH2，条件是R1和R2各自是链烯基，R 3是亚烷基和/或亚芳基，并且R 4是氢或甲基。

5. 发明申请

US20100179283A1 SILICON-CONTAINING COMPOUND, CURABLE COMPOSITION AND CURED PRODUCT 失效
标题翻译：含硅化合物，可固化组合物和固化产品
公开(公告)号：US20100179283A1
公开(公告)日：2010-07-15
申请号：US12596933
申请日：2008-04-21
申请人： Takashi Sueyoshi , Ken-ichiro Hiwatari , Tadashi Janado , Yoshikazu Shoji , Seiichi Saito , Yoshitaka Sugawara
发明人： Takashi Sueyoshi , Ken-ichiro Hiwatari , Tadashi Janado , Yoshikazu Shoji , Seiichi Saito , Yoshitaka Sugawara
IPC分类号： C08L83/00 , C07F7/02 , C08G77/12
CPC分类号： C08G77/50 , C08L83/14 , C08L83/00
摘要： A silicon-containing compound of formula (1), and a curing composition containing a silicon-containing compound of formula (1) wherein Z is hydrogen, a silicon-containing compound of formula (1) wherein Z is C2-C4 alkenyl or alkynyl and a hydrosilylation catalyst. The composition has excellent handling and curing properties and provides a cured product with excellent heat resistance and flexibility. In formula (1), Ra—Rg=C1-C12 saturated aliphatic hydrocarbon group or C6-C12 aromatic hydrocarbon group. Re and Rf do not simultaneously represent C1-C12 saturated aliphatic hydrocarbon group; Y═C2-C4 alkylene; Z=hydrogen or C2-C4 alkenyl or alkynyl; K is 2-7; T is 1-7; P is 0-3; and M and N are numbers selected such that N:M=1:1 to 1:100, that all M's and N's total at least 15, and that the mass average molecular weight of the compound of formula (1) is 3,000 to 1,000,000.
摘要翻译：一种式（1）的含硅化合物和含有其中Z是氢的式（1）的含硅化合物的固化组合物，其中Z是C 2 -C 4烯基或炔基的式（1）的含硅化合物和氢化硅烷化催化剂。该组合物具有优异的处理和固化性能，并提供具有优异的耐热性和柔韧性的固化产物。在式（1）中，Ra-Rg = C1-C12饱和脂族烃基或C6-C12芳族烃基。 Re和Rf不同时代表C1-C12饱和脂族烃基; Y = C 2 -C 4亚烷基; Z =氢或C 2 -C 4烯基或炔基; K为2-7; T为1-7; P为0-3; 并且M和N是选择为N:M = 1:1至1:100的数字，所有M和N的总数至少为15，并且式（1）化合物的质均分子量为3,000至1,000,000 。

6. 发明授权

US07570502B2 Inverter apparatus comprising switching elements 失效
标题翻译：包括开关元件的逆变器装置
公开(公告)号：US07570502B2
公开(公告)日：2009-08-04
申请号：US10565389
申请日：2004-07-23
申请人： Yoshitaka Sugawara , Katsunori Asano , Mitsuru Matsukawa , Yoshifumi Minowa , Toshihiko Shikata
发明人： Yoshitaka Sugawara , Katsunori Asano , Mitsuru Matsukawa , Yoshifumi Minowa , Toshihiko Shikata
IPC分类号： H02M7/5387
CPC分类号： H02M7/521 , H02M1/32 , H02M1/38 , H02M2001/0012
摘要： A problem to be solved by the present invention is to eliminate variation in potential in a turn-off time period of each GTO element, and to stabilize a gate drawing current by surely performing the turn-off of the GTO element. In an inverter apparatus having a three-phase inverter configured to include paired GTO elements an inverter control portion has a simultaneous switching prevention function of delaying a turn-on operation of each of the GTO elements which correspond to phases other than a phase corresponding to an optional one of the GTO elements and also correspond to an electrode opposite to an electrode corresponding to the optional one of the GTO elements by a predetermined time in a case where a turn-on command signal for turning on each of the GTO elements is generated within a predetermined time period since the turn-off of the optional one of the GTO elements.
摘要翻译：本发明要解决的问题是消除每个GTO元件的关断时间段中的电位变化，并且通过可靠地执行GTO元件的关断来稳定栅极引出电流。在具有配置为包括成对的GTO元件的三相逆变器的逆变器装置中，逆变器控制部具有同时切换防止功能，其延迟对应于除了相应于相同的相位之外的相位的每个GTO元件的接通操作在GTO元件中可选的一个，并且在用于接通每个GTO元件的接通命令信号的情况下，也对应于与对应于GTO元件中的任选一个GTO元件的电极相对预定时间的电极自从关闭任选的一个GTO元件以来的预定时间段。

7. 发明授权

US07960738B2 Silicon carbide semiconductor device and manufacturing method therefor 失效
公开(公告)号：US07960738B2
公开(公告)日：2011-06-14
申请号：US12801681
申请日：2010-06-21
申请人： Koji Nakayama , Yoshitaka Sugawara , Katsunori Asano , Hidekazu Tsuchida , Isaho Kamata , Toshiyuki Miyanagi , Tomonori Nakamura
发明人： Koji Nakayama , Yoshitaka Sugawara , Katsunori Asano , Hidekazu Tsuchida , Isaho Kamata , Toshiyuki Miyanagi , Tomonori Nakamura
IPC分类号： H01L29/15 , H01L31/0312
CPC分类号： H01L29/868 , H01L29/045 , H01L29/0619 , H01L29/1608 , H01L29/66068 , H01L29/73 , H01L29/7397
摘要： With a view to preventing increases in forward voltage due to a change with the lapse of time of a bipolar semiconductor device using a silicon carbide semiconductor, a buffer layer, a drift layer and other p-type and n-type semiconductor layers are formed on a growth surface, which is given by a surface of a crystal of a silicon carbide semiconductor having an off-angle θ of 8 degrees from a (000-1) carbon surface of the crystal, at a film growth rate having a film-thickness increasing rate per hour h of 10 μm/h, which is three times or more higher than conventional counterparts. The flow rate of silane and propane material gases and dopant gases is largely increased to enhance the film growth rate.

8. 发明申请

US20100258817A1 Silicon carbide semiconductor device and manufacturing method therefor 失效
公开(公告)号：US20100258817A1
公开(公告)日：2010-10-14
申请号：US12801681
申请日：2010-06-21
申请人： Koji Nakayama , Yoshitaka Sugawara , Katsunori Asano , Hidekazu Tsuchida , Isaho Kamata , Toshiyuki Miyanagi , Tomonori Nakamura
发明人： Koji Nakayama , Yoshitaka Sugawara , Katsunori Asano , Hidekazu Tsuchida , Isaho Kamata , Toshiyuki Miyanagi , Tomonori Nakamura
IPC分类号： H01L29/24
CPC分类号： H01L29/868 , H01L29/045 , H01L29/0619 , H01L29/1608 , H01L29/66068 , H01L29/73 , H01L29/7397
摘要： With a view to preventing increases in forward voltage due to a change with the lapse of time of a bipolar semiconductor device using a silicon carbide semiconductor, a buffer layer, a drift layer and other p-type and n-type semiconductor layers are formed on a growth surface, which is given by a surface of a crystal of a silicon carbide semiconductor having an off-angle θ of 8 degrees from a (000-1) carbon surface of the crystal, at a film growth rate having a film-thickness increasing rate per hour h of 10 μm/h, which is three times or more higher than conventional counterparts. The flow rate of silane and propane material gases and dopant gases is largely increased to enhance the film growth rate.

9. 发明授权

US07960737B2 Silicon carbide semiconductor device and manufacturing method therefor 失效
公开(公告)号：US07960737B2
公开(公告)日：2011-06-14
申请号：US12801679
申请日：2010-06-21
申请人： Koji Nakayama , Yoshitaka Sugawara , Katsunori Asano , Hidekazu Tsuchida , Isaho Kamata , Toshiyuki Miyanagi , Tomonori Nakamura
发明人： Koji Nakayama , Yoshitaka Sugawara , Katsunori Asano , Hidekazu Tsuchida , Isaho Kamata , Toshiyuki Miyanagi , Tomonori Nakamura
IPC分类号： H01L29/15 , H01L31/0312
CPC分类号： H01L29/868 , H01L29/045 , H01L29/0619 , H01L29/1608 , H01L29/66068 , H01L29/73 , H01L29/7397
摘要： With a view to preventing increases in forward voltage due to a change with the lapse of time of a bipolar semiconductor device using a silicon carbide semiconductor, a buffer layer, a drift layer and other p-type and n-type semiconductor layers are formed on a growth surface, which is given by a surface of a crystal of a silicon carbide semiconductor having an off-angle θ of 8 degrees from a (000-1) carbon surface of the crystal, at a film growth rate having a film-thickness increasing rate per hour h of 10 μm/h, which is three times or more higher than conventional counterparts. The flow rate of silane and propane material gases and dopant gases is largely increased to enhance the film growth rate.

10. 发明授权

US07960257B2 Silicon carbide semiconductor device and manufacturing method therefor 失效
标题翻译：碳化硅半导体器件及其制造方法
公开(公告)号：US07960257B2
公开(公告)日：2011-06-14
申请号：US12801680
申请日：2010-06-21
申请人： Koji Nakayama , Yoshitaka Sugawara , Katsunori Asano , Hidekazu Tsuchida , Isaho Kamata , Toshiyuki Miyanagi , Tomonori Nakamura
发明人： Koji Nakayama , Yoshitaka Sugawara , Katsunori Asano , Hidekazu Tsuchida , Isaho Kamata , Toshiyuki Miyanagi , Tomonori Nakamura
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L29/868 , H01L29/045 , H01L29/0619 , H01L29/1608 , H01L29/66068 , H01L29/73 , H01L29/7397
摘要： With a view to preventing increases in forward voltage due to a change with the lapse of time of a bipolar semiconductor device using a silicon carbide semiconductor, a buffer layer, a drift layer and other p-type and n-type semiconductor layers are formed on a growth surface, which is given by a surface of a crystal of a silicon carbide semiconductor having an off-angle θ of 8 degrees from a (000-1) carbon surface of the crystal, at a film growth rate having a film-thickness increasing rate per hour h of 10 μm/h, which is three times or more higher than conventional counterparts. The flow rate of silane and propane material gases and dopant gases is largely increased to enhance the film growth rate.
摘要翻译：为了防止由于使用碳化硅半导体的双极性半导体器件随时间的变化引起的正向电压的增加，缓冲层，漂移层和其他p型和n型半导体层形成在生长表面，其由具有偏角角度的硅碳化物半导体的晶体的表面给出; （000-1）碳表面8度，以每小时薄膜增加率为10μm/小时的膜生长速率，比常规对应物高3倍以上。硅烷和丙烷材料气体和掺杂气体的流速大大增加，以提高膜生长速率。

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