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1. 发明申请

US20070262472A1 High Withstand Voltage Semiconductor Device Covered with Resin and Manufacturing Method Therefor 审中-公开
标题翻译：树脂覆盖的高耐压半导体器件及其制造方法
公开(公告)号：US20070262472A1
公开(公告)日：2007-11-15
申请号：US11664586
申请日：2005-10-05
申请人： Shinichi Okada , Yoshitaka Sugawara , Katsunori Asano , Daisuke Takayama , Yoshikazu Shoji , Tadashi Janado , Takashi Sueyoshi , Ken-Ichiro Hiwatari
发明人： Shinichi Okada , Yoshitaka Sugawara , Katsunori Asano , Daisuke Takayama , Yoshikazu Shoji , Tadashi Janado , Takashi Sueyoshi , Ken-Ichiro Hiwatari
IPC分类号： H01L23/29 , H01L21/56
CPC分类号： H01L23/24 , H01L23/296 , H01L23/3121 , H01L24/48 , H01L2224/48137 , H01L2224/4823 , H01L2224/8592 , H01L2924/00014 , H01L2924/01004 , H01L2924/01078 , H01L2924/10272 , H01L2924/1305 , H01L2924/13055 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A high withstand voltage semiconductor chip mounted on a package or a board is covered with a sealing resin, and the resin is cured while a high voltage is applied between at least one of electrode terminals connected from a chip electrode or the chip via wiring of wires or the like and another electrode that necessitates a dielectric withstand voltage between the electrode and the electrode terminal during the curing. The sealing resin is provided by a synthetic high molecular compound structured in a manner that an organic silicon polymer C is constituted by alternately linearly linking an organic silicon polymer A having a crosslinking structure of siloxane with an organic silicon polymer B having a linear link structure of siloxane (Si—O—Si bond) by siloxane bond and the polymers are three-dimensionally linked together by covalent bond. With this arrangement, a dielectric withstand voltage capability, which is stable by suppression of an increase in the leakage current even when a high reverse voltage is applied and agrees with the designed value, can be obtained in a high withstand voltage semiconductor chip that is mounted on a board or a package and sealed with the resin.
摘要翻译：安装在封装或板上的高耐压半导体芯片被密封树脂覆盖，并且在从芯片电极连接的至少一个电极端子或芯片之间施加高电压而使树脂固化，或类似物以及在固化期间必须在电极和电极端子之间具有介电耐受电压的另一电极。密封树脂由合成的高分子化合物提供，所述合成高分子化合物以有机硅聚合物C通过将具有硅氧烷的交联结构的有机硅聚合物A与具有硅氧烷的交联结构的有机硅聚合物A与具有直链结构通过硅氧烷键的硅氧烷（Si-O-Si键），并且聚合物通过共价键三维连接在一起。通过这种布置，即使在施加高的反向电压并且与设计值一致的情况下也可以通过抑制漏电流的增加而稳定的介电耐受电压能力可以在安装的高耐压半导体芯片中获得在纸板或包装上，并用树脂密封。

2. 发明申请

US20070197755A1 Silicon-containing curing composition and heat cured product thereof 有权
标题翻译：含硅固化组合物及其热固化产物
公开(公告)号：US20070197755A1
公开(公告)日：2007-08-23
申请号：US10594221
申请日：2005-05-10
申请人： Takashi Sueyoshi , Ken-ichiro Hiwatari , Tadashi Janado , Yoshikazu Shoji , Yoshitaka Sugawara
发明人： Takashi Sueyoshi , Ken-ichiro Hiwatari , Tadashi Janado , Yoshikazu Shoji , Yoshitaka Sugawara
IPC分类号： C08L83/04 , C08G77/04
CPC分类号： C08L83/04 , C08G77/12 , C08G77/14 , C08G77/18 , C08G77/20 , C08G77/70 , C08L83/00
摘要： A curable composition which comprises at least one of the following (A), (B), and (C) and further contains the following (D) (provided that when (C) is not contained, both (A) and (B) are contained). (A): A silicon-containing polymer in which the content of components having a weight-average molecular weight of 1,000 or lower is 20 wt. % or lower and which has a reactive group A′ and one or more Si—O—Si bonds. (B): A silicon-containing polymer in which the content of components having a weight-average molecular weight of 1,000 or lower is 20 wt. % or lower and which has an Si—H group and one or more Si—O—Si bonds. (C): A silicon-containing polymer in which the content of components having a weight-average molecular weight of 1,000 or lower is 20 wt. % or lower and which has a reactive group A′, an Si—H group, and one or more Si—O—Si bonds. (D): A catalyst for curing reaction which is a platinum catalyst. The reactive group A′ is any of Si—R1, Si—O—R2, and Si—R3—OCOC(R4)═CH2, provided that R1 and R2 each is alkenyl, R3 is alkylene and/or arylene, and R4 is hydrogen or methyl.
摘要翻译：包含以下（A），（B）和（C）中的至少一个的可固化组合物，并且还包含以下（D）（前提是不含（C）时，（A）和（B）被包含）。（A）：重均分子量为1000以下的成分的含量为20重量％的含硅聚合物。％以下，具有反应性基团A'和一个或多个Si-O-Si键。（B）：重均分子量为1000以下的成分的含量为20重量％的含硅聚合物。％以下，并且具有Si-H基和一个或多个Si-O-Si键。（C）：重均分子量为1000以下的成分的含量为20重量％的含硅聚合物。％以下，具有反应性基团A'，Si-H基和一个或多个Si-O-Si键。（D）：铂催化剂用于固化反应的催化剂。反应性基团A'是Si-R 1，Si-OR 2和Si-R 3 -OCOC（R SUP）中的任何一种 > 4 ） - CH 2，条件是R 1和R 2各自为烯基，R 3， SUP>是亚烷基和/或亚芳基，R 4是氢或甲基。

3. 发明授权

US08003736B2 Silicon-containing compound, curable composition and cured product 失效
标题翻译：含硅化合物，固化性组合物和固化物
公开(公告)号：US08003736B2
公开(公告)日：2011-08-23
申请号：US12596933
申请日：2008-04-21
申请人： Takashi Sueyoshi , Ken-ichiro Hiwatari , Tadashi Janado , Yoshikazu Shoji , Seiichi Saito , Yoshitaka Sugawara
发明人： Takashi Sueyoshi , Ken-ichiro Hiwatari , Tadashi Janado , Yoshikazu Shoji , Seiichi Saito , Yoshitaka Sugawara
IPC分类号： C08F283/00
CPC分类号： C08G77/50 , C08L83/14 , C08L83/00
摘要： A silicon-containing compound of formula (1), and a curing composition containing a silicon-containing compound of formula (1) wherein Z is hydrogen, a silicon-containing compound of formula (1) wherein Z is C2-C4 alkenyl or alkynyl and a hydrosilylation catalyst. The composition has excellent handling and curing properties and provides a cured product with excellent heat resistance and flexibility. In formula (1), Ra-Rg=C1-C12 saturated aliphatic hydrocarbon group or C6-C12 aromatic hydrocarbon group. Re and Rf do not simultaneously represent C1-C12 saturated aliphatic hydrocarbon group; Y=C2-C4 alkylene; Z=hydrogen or C2-C4 alkenyl or alkynyl; K is 2-7; T is 1-7; P is 0-3; and M and N are numbers selected such that N:M=1:1 to 1:100, that all M's and N's total at least 15, and that the mass average molecular weight of the compound of formula (1) is 3,000 to 1,000,000.
摘要翻译：一种式（1）的含硅化合物和含有其中Z是氢的式（1）的含硅化合物的固化组合物，其中Z是C 2 -C 4烯基或炔基的式（1）的含硅化合物和氢化硅烷化催化剂。该组合物具有优异的处理和固化性能，并提供具有优异的耐热性和柔韧性的固化产物。在式（1）中，Ra-Rg = C1-C12饱和脂族烃基或C6-C12芳族烃基。 Re和Rf不同时代表C1-C12饱和脂族烃基; Y = C2-C4亚烷基; Z =氢或C 2 -C 4烯基或炔基; K为2-7; T为1-7; P为0-3; 并且M和N是选择为N:M = 1:1至1:100的数字，所有M和N的总数至少为15，并且式（1）化合物的质均分子量为3,000至1,000,000 。

4. 发明授权

US07939614B2 Silicon-containing curing composition and heat cured product thereof 有权
标题翻译：含硅固化性组合物以及它们的热固化产物
公开(公告)号：US07939614B2
公开(公告)日：2011-05-10
申请号：US10594221
申请日：2005-05-10
申请人： Takashi Sueyoshi , Ken-Ichiro Hiwatari , Tadashi Janado , Yoshikazu Shoji , Yoshitaka Sugawara
发明人： Takashi Sueyoshi , Ken-Ichiro Hiwatari , Tadashi Janado , Yoshikazu Shoji , Yoshitaka Sugawara
IPC分类号： C08G77/04 , C08G77/12 , C08G77/14 , C08G77/20
CPC分类号： C08L83/04 , C08G77/12 , C08G77/14 , C08G77/18 , C08G77/20 , C08G77/70 , C08L83/00
摘要： A curable composition which comprises at least one of the following (A), (B), and (C) and further contains (D) (provided that when (C) is not contained, both (A) and (B) are in the composition. (A): A silicon-containing polymer in which the content of components having a weight-average molecular weight of 1,000 or lower is 20 wt. % or lower and which has a reactive group A′ and one or more Si—O—Si bonds. (B): A silicon-containing polymer in which the content of components having a weight-average molecular weight of 1,000 or lower is 20 wt. % or lower and which has an Si—H group and one or more Si—O—Si bonds. (C): A silicon-containing polymer in which the content of components having a weight-average molecular weight of 1,000 or lower is 20 wt. % or lower and which has a reactive group A′, an Si—H group, and one or more Si—O—Si bonds. (D): A catalyst for curing reaction which is a platinum catalyst. The reactive group A′ is any of Si—R1, Si—O—R2, and Si—R3—OCOC(R4)═CH2, provided that R1 and R2 each is alkenyl, R3 is alkylene and/or arylene, and R4 is hydrogen or methyl.
摘要翻译：一种可固化的组合物，其包含以下的（A）中的至少一种，（B），和（C），还含有（D）（条件是当（C）不包含，无论（A）和（B）是在该组合物（A）：含硅聚合物，其中具有1,000或更低的重均分子量成分的含量为20重量％或更低，其中有一个反应性基团A'和一个或多个SI- O-Si键（B）：A含硅聚合物，其中具有1,000或更低的重均分子量成分的含量为20重量％或更低，其具有Si-H基和一个或多个 Si-O-Si键（C）：其中重均分子量为1,000以下的成分的含量为20重量％以下且具有反应性基团A'的含硅聚合物， Si-H基和一个或多个Si-O-Si键;（D）：作为铂催化剂的用于固化反应的催化剂，反应性基团A'是Si-R 1，Si-O-R 2和的Si-R3 OCOC（R 4）═CH2，条件是R1和R2各自是链烯基，R 3是亚烷基和/或亚芳基，并且R 4是氢或甲基。

5. 发明申请

US20100179283A1 SILICON-CONTAINING COMPOUND, CURABLE COMPOSITION AND CURED PRODUCT 失效
标题翻译：含硅化合物，可固化组合物和固化产品
公开(公告)号：US20100179283A1
公开(公告)日：2010-07-15
申请号：US12596933
申请日：2008-04-21
申请人： Takashi Sueyoshi , Ken-ichiro Hiwatari , Tadashi Janado , Yoshikazu Shoji , Seiichi Saito , Yoshitaka Sugawara
发明人： Takashi Sueyoshi , Ken-ichiro Hiwatari , Tadashi Janado , Yoshikazu Shoji , Seiichi Saito , Yoshitaka Sugawara
IPC分类号： C08L83/00 , C07F7/02 , C08G77/12
CPC分类号： C08G77/50 , C08L83/14 , C08L83/00
摘要： A silicon-containing compound of formula (1), and a curing composition containing a silicon-containing compound of formula (1) wherein Z is hydrogen, a silicon-containing compound of formula (1) wherein Z is C2-C4 alkenyl or alkynyl and a hydrosilylation catalyst. The composition has excellent handling and curing properties and provides a cured product with excellent heat resistance and flexibility. In formula (1), Ra—Rg=C1-C12 saturated aliphatic hydrocarbon group or C6-C12 aromatic hydrocarbon group. Re and Rf do not simultaneously represent C1-C12 saturated aliphatic hydrocarbon group; Y═C2-C4 alkylene; Z=hydrogen or C2-C4 alkenyl or alkynyl; K is 2-7; T is 1-7; P is 0-3; and M and N are numbers selected such that N:M=1:1 to 1:100, that all M's and N's total at least 15, and that the mass average molecular weight of the compound of formula (1) is 3,000 to 1,000,000.
摘要翻译：一种式（1）的含硅化合物和含有其中Z是氢的式（1）的含硅化合物的固化组合物，其中Z是C 2 -C 4烯基或炔基的式（1）的含硅化合物和氢化硅烷化催化剂。该组合物具有优异的处理和固化性能，并提供具有优异的耐热性和柔韧性的固化产物。在式（1）中，Ra-Rg = C1-C12饱和脂族烃基或C6-C12芳族烃基。 Re和Rf不同时代表C1-C12饱和脂族烃基; Y = C 2 -C 4亚烷基; Z =氢或C 2 -C 4烯基或炔基; K为2-7; T为1-7; P为0-3; 并且M和N是选择为N:M = 1:1至1:100的数字，所有M和N的总数至少为15，并且式（1）化合物的质均分子量为3,000至1,000,000 。

6. 发明授权

US08735177B2 Diagnostic marker 有权
标题翻译：诊断标记
公开(公告)号：US08735177B2
公开(公告)日：2014-05-27
申请号：US11918465
申请日：2007-02-20
申请人： Shinji Sakuma , Shinji Yamashita , Ken-Ichiro Hiwatari , Yoshikazu Shoji
发明人： Shinji Sakuma , Shinji Yamashita , Ken-Ichiro Hiwatari , Yoshikazu Shoji
IPC分类号： G01N33/547 , G01N33/544
CPC分类号： A61K49/0039 , A61K49/0002 , A61K49/0043 , A61K49/0052 , A61K49/0056 , A61K49/0093
摘要： A diagnostic marker is composed of particles that have a diameter of from 1 nm to 100 μm, the particles possessing on their surfaces a site that has a high specific bonding ability to a specific antigen residing on the mucosa of digestive cancers and a site that has a low bonding ability to the mucosa of digestive organs, and further incorporating an identification material.
摘要翻译：诊断标记由直径为1nm至100μm的颗粒组成，颗粒在其表面上具有与存在于消化性癌症粘膜上的特异性抗原具有高特异性结合能力的位点，以及具有对消化器官粘膜的粘合能力低，并进一步掺入鉴定材料。

7. 发明申请

US20090075301A1 Diagnostic Marker 有权
标题翻译：诊断标记
公开(公告)号：US20090075301A1
公开(公告)日：2009-03-19
申请号：US11918465
申请日：2007-02-20
申请人： Shinji Sakuma , Shinji Yamashita , Ken-ichiro Hiwatari , Yoshikazu Shoji
发明人： Shinji Sakuma , Shinji Yamashita , Ken-ichiro Hiwatari , Yoshikazu Shoji
IPC分类号： G01N33/574 , G01N33/53
CPC分类号： A61K49/0039 , A61K49/0002 , A61K49/0043 , A61K49/0052 , A61K49/0056 , A61K49/0093
摘要： A diagnostic marker is composed of particles that have a diameter of from 1 nm to 100 μm, the particles possessing on their surfaces a site that has a high specific bonding ability to a specific antigen residing on the mucosa of digestive cancers and a site that has a low bonding ability to the mucosa of digestive organs, and further incorporating an identification material.
摘要翻译：诊断标记由直径为1nm至100μm的颗粒组成，颗粒在其表面上具有对存在于消化性癌症粘膜上的特异性抗原具有高特异性结合能力的位点，以及具有对消化器官粘膜的粘合能力低，并进一步掺入鉴定材料。

8. 发明授权

US07772594B2 High-heat-resistive semiconductor device 失效
标题翻译：高耐热半导体器件
公开(公告)号：US07772594B2
公开(公告)日：2010-08-10
申请号：US11661778
申请日：2005-09-06
申请人： Yoshitaka Sugawara , Yoshikazu Shoji
发明人： Yoshitaka Sugawara , Yoshikazu Shoji
IPC分类号： H01L29/12 , C08G77/12 , C08G77/20
CPC分类号： C08L83/04 , C08G77/12 , C08G77/14 , C08G77/20 , C08G77/70 , H01L23/04 , H01L23/045 , H01L23/145 , H01L23/295 , H01L23/296 , H01L23/3121 , H01L23/48 , H01L24/45 , H01L24/48 , H01L25/0657 , H01L33/56 , H01L2224/45015 , H01L2224/45144 , H01L2224/48091 , H01L2224/48137 , H01L2224/4823 , H01L2224/48465 , H01L2224/8592 , H01L2225/0651 , H01L2225/06555 , H01L2225/06582 , H01L2924/01012 , H01L2924/01014 , H01L2924/01019 , H01L2924/0102 , H01L2924/01029 , H01L2924/01046 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/12036 , H01L2924/12043 , H01L2924/12044 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/13062 , H01L2924/13063 , H01L2924/13091 , H01L2924/14 , H01L2924/16152 , H01L2924/00014 , H01L2924/00
摘要： The outer surface of a wide-gap semiconductor device is coated with a synthetic polymer compound containing one or more silicon-containing polymer having a bridged structure formed by a siloxane (Si—O—Si bond structure). The synthetic polymer compound may include, for example, a silicon-containing polymer which has one or more reactive groups (A′) selected from Si—R1, Si—O—R2 and Si—R3—OCOC(R4)═CH2, has a bridged structure formed by an Si—O—Si bond in one or more locations, and contains components having weight average molecular weights of not more than 1000 in an amount of 20% or less by weight.
摘要翻译：宽间隙半导体器件的外表面涂覆有含有一种或多种具有由硅氧烷（Si-O-Si键结构）形成的桥连结构的含硅聚合物的合成高分子化合物。合成高分子化合物可以包括例如具有选自Si-R1，Si-O-R2和Si-R3-OCOC（R4）= CH2中的一个或多个反应性基团（A'）的含硅聚合物，具有在一个或多个位置由Si-O-Si键形成的桥连结构，并且包含重量平均分子量为不超过20％或更少的重量的组分。

9. 发明申请

US20080042142A1 Highly Heat-Resistant Synthetic Polymer Compound and High Withstand Voltage Semiconductor Device 审中-公开
标题翻译：高耐热合成高分子化合物和高耐压半导体器件
公开(公告)号：US20080042142A1
公开(公告)日：2008-02-21
申请号：US11795086
申请日：2006-01-25
申请人： Yoshitaka Sugawara , Yoshikazu Shoji
发明人： Yoshitaka Sugawara , Yoshikazu Shoji
IPC分类号： C08G77/44 , C08L83/10 , H01L23/29 , H01L23/31 , H01L29/744 , H01L29/861 , H01L31/12 , H01L33/00
CPC分类号： H01L23/3135 , C08G77/04 , C08G77/44 , H01L23/04 , H01L23/045 , H01L23/24 , H01L23/3121 , H01L24/45 , H01L24/48 , H01L24/49 , H01L25/072 , H01L25/074 , H01L25/167 , H01L31/0203 , H01L33/56 , H01L2224/04042 , H01L2224/32245 , H01L2224/45015 , H01L2224/45144 , H01L2224/48091 , H01L2224/48137 , H01L2224/4823 , H01L2224/48465 , H01L2224/49107 , H01L2224/73265 , H01L2224/8592 , H01L2924/01057 , H01L2924/01078 , H01L2924/01079 , H01L2924/12032 , H01L2924/12036 , H01L2924/12043 , H01L2924/12044 , H01L2924/1301 , H01L2924/13034 , H01L2924/1305 , H01L2924/13055 , H01L2924/13062 , H01L2924/13063 , H01L2924/13091 , H01L2924/16152 , H01L2924/00014 , H01L2924/00 , H01L2924/20758
摘要： The outer surface of a wide-gap semiconductor device is covered with a synthetic polymer compound. The synthetic polymer compound is formed by linking a plurality of third organosilicon polymers through covalent bonding which is formed by addition reaction, and has a three-dimensional steric structure. The third organosilicon polymers are obtained by liking one or more kinds of first organosilicon polymers having a bridge structure formed by siloxane bonds (Si—O—Si bonds) with one or more kinds of second organosilicon polymers having a linear structure formed by siloxane bonds. Insulating ceramic fine particles having high heat conductivity are preferably mixed with the synthetic polymer compound.
摘要翻译：宽间隙半导体器件的外表面被合成高分子化合物覆盖。合成高分子化合物通过通过加成反应形成的共价键连接多个第三有机硅聚合物而形成，并且具有三维空间结构。第三有机硅聚合物是通过一种或多种具有由硅氧烷键（Si-O-Si键）形成的桥连结构的第一有机硅聚合物与一种或多种具有由硅氧烷键形成的线性结构的第二有机硅聚合物而获得的。具有高导热性的绝缘陶瓷微粒优选与合成高分子化合物混合。

10. 发明申请

US20080210948A1 High-Heat-Resistive Semiconductor Device 失效
标题翻译：高耐热半导体器件
公开(公告)号：US20080210948A1
公开(公告)日：2008-09-04
申请号：US11661778
申请日：2005-09-06
申请人： Yoshitaka Sugawara , Yoshikazu Shoji
发明人： Yoshitaka Sugawara , Yoshikazu Shoji
IPC分类号： H01L29/12
CPC分类号： C08L83/04 , C08G77/12 , C08G77/14 , C08G77/20 , C08G77/70 , H01L23/04 , H01L23/045 , H01L23/145 , H01L23/295 , H01L23/296 , H01L23/3121 , H01L23/48 , H01L24/45 , H01L24/48 , H01L25/0657 , H01L33/56 , H01L2224/45015 , H01L2224/45144 , H01L2224/48091 , H01L2224/48137 , H01L2224/4823 , H01L2224/48465 , H01L2224/8592 , H01L2225/0651 , H01L2225/06555 , H01L2225/06582 , H01L2924/01012 , H01L2924/01014 , H01L2924/01019 , H01L2924/0102 , H01L2924/01029 , H01L2924/01046 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/12036 , H01L2924/12043 , H01L2924/12044 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/13062 , H01L2924/13063 , H01L2924/13091 , H01L2924/14 , H01L2924/16152 , H01L2924/00014 , H01L2924/00
摘要： The outer surface of a wide-gap semiconductor device is coated with a synthetic polymer compound containing one or more silicon-containing polymer having a bridged structure formed by a siloxane (Si—O—Si bond structure). The synthetic polymer compound may include, for example, a silicon-containing polymer which has one or more reactive groups (A′) selected from Si—R1, Si—O—R2 and Si—R3—OCOC(R4)═CH2, has a bridged structure formed by an Si—O—Si bond in one or more locations, and contains components having weight average molecular weights of not more than 1000 in an amount of 20% or less by weight.
摘要翻译：宽间隙半导体器件的外表面涂覆有含有一种或多种具有由硅氧烷（Si-O-Si键结构）形成的桥连结构的含硅聚合物的合成高分子化合物。合成高分子化合物可以包括例如具有一个或多个反应性基团（A'）的含硅聚合物，其选自Si-R 1，Si-OR 2， >和Si-R 3 -OCOC（R 4） - CH 2 2具有通过Si-O-Si键形成的桥连结构在一个或多个位置，并且包含重量平均分子量不大于1000的组分，其量为20重量％或更少。

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