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1. 发明授权

US07463026B2 Magnetic sensor including bridge circuit having fixed resistance like structure of element 有权
标题翻译：磁传感器包括具有固定电阻的桥接电路，如元件结构
公开(公告)号：US07463026B2
公开(公告)日：2008-12-09
申请号：US11679083
申请日：2007-02-26
申请人： Shinichi Sasaki , Kiyoshi Sato , Naoya Hasegawa , Yoshito Sasaki , Eiji Umetsu
发明人： Shinichi Sasaki , Kiyoshi Sato , Naoya Hasegawa , Yoshito Sasaki , Eiji Umetsu
IPC分类号： G01R33/09 , G01B7/14 , H01L43/08
CPC分类号： H04M1/0245 , B82Y25/00 , G01R33/07 , G01R33/093 , H04M2250/12
摘要： A magnetic sensor uses a magnetoresistance element which can be driven in a stable manner with a dipole irrespective of a polarity of an external magnetic field. A resistance value R of first magnetoresistance elements varies, and a resistance value of second magnetoresistance elements does not vary with a variation in magnetic field magnitude of the external magnetic field H1 in the positive direction. A resistance value R of second magnetoresistance elements varies and a resistance value of first magnetoresistance elements does not vary with a variation in magnetic field magnitude of the external magnetic field H2 in the negative direction. Accordingly, the magnetic sensor can be driven in a stable manner with a dipole irrespective of the polarity of the external magnetic field.
摘要翻译：磁传感器使用磁阻元件，其可以与外部磁场的极性无关地以偶极子稳定地驱动。第一磁阻元件的电阻值R变化，第二磁阻元件的电阻值不随着外部磁场H1在正方向上的磁场强度的变化而变化。第二磁阻元件的电阻值R变化，第一磁阻元件的电阻值不随外部磁场H2在负方向的磁场强度的变化而变化。因此，无论外部磁场的极性如何，都可以用偶极子稳定地驱动磁传感器。

2. 发明申请

US20080024120A1 MAGNETIC SENSOR INCLUDING BRIDGE CIRCUIT HAVING FIXED RESISTANCE LIKE STRUCTURE OF ELEMENT 有权
标题翻译：磁性传感器，包括具有固定电阻类型结构的桥接电路
公开(公告)号：US20080024120A1
公开(公告)日：2008-01-31
申请号：US11679083
申请日：2007-02-26
申请人： Shinichi Sasaki , Kiyoshi Sato , Naoya Hasegawa , Yoshito Sasaki , Eiji Umetsu
发明人： Shinichi Sasaki , Kiyoshi Sato , Naoya Hasegawa , Yoshito Sasaki , Eiji Umetsu
IPC分类号： G01B7/30
CPC分类号： H04M1/0245 , B82Y25/00 , G01R33/07 , G01R33/093 , H04M2250/12
摘要： A magnetic sensor uses a magnetoresistance element which can be driven in a stable manner with a dipole irrespective of a polarity of an external magnetic field. A resistance value R of first magnetoresistance elements varies, and a resistance value of second magnetoresistance elements does not vary with a variation in magnetic field magnitude of the external magnetic field H1 in the positive direction. A resistance value R of second magnetoresistance elements varies and a resistance value of first magnetoresistance elements does not vary with a variation in magnetic field magnitude of the external magnetic field H2 in the negative direction. Accordingly, the magnetic sensor can be driven in a stable manner with a dipole irrespective of the polarity of the external magnetic field.
摘要翻译：磁传感器使用磁阻元件，其可以与外部磁场的极性无关地以偶极子稳定地驱动。第一磁阻元件的电阻值R变化，第二磁阻元件的电阻值不随外部磁场H 1的正方向的磁场强度的变化而变化。第二磁阻元件的电阻值R变化，并且第一磁阻元件的电阻值不随外部磁场H 2在负方向上的磁场强度的变化而变化。因此，无论外部磁场的极性如何，都可以用偶极子稳定地驱动磁传感器。

3. 发明授权

US6150046A Combination magnetoresistive/inductive thin film magnetic head and its manufacturing method 失效
公开(公告)号：US6150046A
公开(公告)日：2000-11-21
申请号：US16838
申请日：1998-01-30
申请人： Toshinori Watanabe , Akira Takahashi , Fumihito Koike , Nobuhiro Hayashi , Yoshihiro Kanada , Kiyoshi Sato , Eiji Umetsu , Takashi Hatanai , Akihiro Makino
发明人： Toshinori Watanabe , Akira Takahashi , Fumihito Koike , Nobuhiro Hayashi , Yoshihiro Kanada , Kiyoshi Sato , Eiji Umetsu , Takashi Hatanai , Akihiro Makino
IPC分类号： G11B5/11 , G11B5/31 , G11B5/39 , H01F10/13 , G11B5/66
CPC分类号： G11B5/3967 , G11B5/3106 , G11B5/3109 , G11B5/3113 , G11B5/3163 , H01F10/131 , G11B5/112 , G11B5/3116 , G11B5/3903 , H01F10/265 , Y10S428/90 , Y10T428/1143 , Y10T428/1171 , Y10T428/12465 , Y10T428/12472 , Y10T428/12576 , Y10T428/1259 , Y10T428/1266 , Y10T428/12674 , Y10T428/12806 , Y10T428/12854 , Y10T428/12861 , Y10T428/12875 , Y10T428/12931
摘要： A thin film magnetic head includes an upper core layer and a lower core layer which are made of an Fe--M--O alloy, an Fe--M--T--O alloy or an NI--Fe--X alloy so that the upper core layer has a high saturation magnetic flux density, low coercive force and high resistivity, and the lower core layer has a lower saturation magnetic flux density than the upper core layer, low coercive force, high resistivity, and a low magnetostriction constant. Also the lower core layer is formed so that the thickness gradually decreases toward both side ends, and a gap layer can be formed on the lower core layer to have a uniform thickness. Since the lower core layer is formed by sputtering, a material having excellent soft magnetic material can be used, thereby enabling recording at high frequency.

4. 发明授权

US06346338B1 Combination magnetoresistive/inductive thin film magnetic head and its manufacturing method 有权
标题翻译：组合磁阻/感应薄膜磁头及其制造方法
公开(公告)号：US06346338B1
公开(公告)日：2002-02-12
申请号：US09685435
申请日：2000-10-10
申请人： Toshinori Watanabe , Akira Takahashi , Fumihito Koike , Nobuhiro Hayashi , Yoshihiro Kanada , Kiyoshi Kobayashi , Kiyoshi Sato , Eiji Umetsu , Takashi Hatanai , Akihiro Makino
发明人： Toshinori Watanabe , Akira Takahashi , Fumihito Koike , Nobuhiro Hayashi , Yoshihiro Kanada , Kiyoshi Kobayashi , Kiyoshi Sato , Eiji Umetsu , Takashi Hatanai , Akihiro Makino
IPC分类号： G11B539
CPC分类号： G11B5/3967 , G11B5/112 , G11B5/3106 , G11B5/3109 , G11B5/3113 , G11B5/3116 , G11B5/3163 , G11B5/3903 , H01F10/131 , H01F10/265 , Y10S428/90 , Y10T428/1143 , Y10T428/1171 , Y10T428/12465 , Y10T428/12472 , Y10T428/12576 , Y10T428/1259 , Y10T428/1266 , Y10T428/12674 , Y10T428/12806 , Y10T428/12854 , Y10T428/12861 , Y10T428/12875 , Y10T428/12931
摘要： A thin film magnetic head includes an upper core layer and a lower core layer which are made of an Fe—M—O alloy, an Fe—M—T—O alloy or an NI—Fe—X alloy so that the upper core layer has a high saturation magnetic flux density, low coercive force and high resistivity, and the lower core layer has a lower saturation magnetic flux density than the upper core layer, low coercive force, high resistivity, and a low magnetostriction constant. Also the lower core layer is formed so that the thickness gradually decreases toward both side ends, and a gap layer can be formed on the lower core layer to have a uniform thickness. Since the lower core layer is formed by sputtering, a material having excellent soft magnetic material can be used, thereby enabling recording at high frequency.
摘要翻译：薄膜磁头包括由Fe-Mo合金，Fe-MTO合金或NI-Fe-X合金制成的上芯层和下芯层，使得上芯层具有高的饱和磁通量密度低，矫顽力低，电阻率高，下芯层具有比上芯层低的饱和磁通密度，低矫顽力，高电阻率和低磁致伸缩常数。此外，下芯层形成为使得厚度朝向两个侧端逐渐减小，并且可以在下芯层上形成间隙层以具有均匀的厚度。由于通过溅射形成下芯层，因此可以使用具有优异的软磁性材料的材料，从而能够以高频进行记录。

5. 发明授权

US07414398B2 Magnetic detection device having magnetic detection element in magnetic detection circuit and fabricating method thereof 有权
标题翻译：在磁检测电路中具有磁检测元件的磁检测装置及其制造方法
公开(公告)号：US07414398B2
公开(公告)日：2008-08-19
申请号：US11692823
申请日：2007-03-28
申请人： Yoshito Sasaki , Hideki Gochou , Kiyoshi Sato
发明人： Yoshito Sasaki , Hideki Gochou , Kiyoshi Sato
IPC分类号： G01R33/02
CPC分类号： G01R33/09
摘要： A magnetic detection device of which an output can be completely switched over with an external magnetic field is formed in a small size. A detection circuit is formed by forming circuit elements such as an active element layer and interconnection layers on a substrate. An insulating layer is formed on the detection circuit, and a flat surface is formed on the resultant surface. A magnetic detection element that detects an external magnetic field by using a magneto-resistance effect and a fixed resistance element, which has the same electric resistance as the magnetic detection element but does not react to the external magnetic field, are formed on the flat surface. Electrode layers and a lead layer are formed on the flat surface, and the lead layer and the interconnection layer are electrically connected to each other via a bump penetrating the insulating layer. The magnetic detection element and the fixed resistance element are formed on the flat surface of the insulating layer, thereby forming a small magnetic detection device.
摘要翻译：能够以外部磁场将输出完全切换的磁检测装置形成为小尺寸。通过在衬底上形成诸如有源元件层和互连层的电路元件来形成检测电路。在检测电路上形成绝缘层，在所得表面上形成平坦表面。通过使用具有与磁检测元件相同但不与外部磁场反应的电阻的磁阻效应和固定电阻元件来检测外部磁场的磁检测元件形成在平面上。电极层和引线层形成在平坦表面上，并且引线层和互连层通过穿过绝缘层的凸块彼此电连接。磁性检测元件和固定电阻元件形成在绝缘层的平坦表面上，从而形成小的磁性检测装置。

6. 发明授权

US06587315B1 Magnetoresistive-effect device with a magnetic coupling junction 失效
标题翻译：具有磁耦合结的磁阻效应器件
公开(公告)号：US06587315B1
公开(公告)日：2003-07-01
申请号：US09487691
申请日：2000-01-19
申请人： Daigo Aoki , Naoya Hasegawa , Kenji Honda , Kiyoshi Sato , Yoshihiko Kakihara
发明人： Daigo Aoki , Naoya Hasegawa , Kenji Honda , Kiyoshi Sato , Yoshihiko Kakihara
IPC分类号： G11B539
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G11B5/3903 , G11B2005/3996 , H01L43/12 , Y10T29/49044
摘要： A magnetoresistive-effect device includes a multilayer film, hard bias layers arranged on both sides of the multilayer film, and electrode layers respectively deposited on the hard bias layers. The electrode layers are formed, extending over the multilayer film. Under the influence of the hard bias layers arranged on both sides of the multilayer, the multilayer film, forming the magnetoresistive-effect device, has, on the end portions thereof, insensitive regions which exhibit no substantial magnetoresistive effect. The insensitive region merely increases a direct current resistance. By extending the electrode layers over the insensitive regions of the multilayer film, a sense current is effectively flown from the electrode layer into the multilayer film. With a junction area between the electrode layer and the multilayer film increased, the direct current resistance is reduced, while the reproduction characteristics of the device are thus improved.
摘要翻译：磁阻效应器件包括多层膜，布置在多层膜两侧的硬偏置层以及分别沉积在硬偏压层上的电极层。在多层膜上形成电极层。在布置在多层的两侧的硬偏置层的影响下，形成磁阻效应器件的多层膜在其端部上具有不显着的磁阻效应的不敏感区域。不敏感区域仅增加直流电阻。通过将电极层延伸到多层膜的不敏感区域上，感测电流有效地从电极层流入多层膜。在电极层和多层膜之间的接合区域增加的同时，直流电阻降低，同时改善了器件的再现特性。

7. 发明申请

US20080054895A1 MAGNETIC DETECTION DEVICE HAVING SECOND BRIDGE CIRCUIT INCLUDING FIXED RESISTANCE ELEMENT WITH HIGH RESISTANCE 审中-公开
标题翻译：具有第二桥电路的磁性检测装置，包括具有高电阻的固定电阻元件
公开(公告)号：US20080054895A1
公开(公告)日：2008-03-06
申请号：US11679102
申请日：2007-02-26
申请人： Yoshito Sasaki , Katsuya Kikuiri , Kiyoshi Sato
发明人： Yoshito Sasaki , Katsuya Kikuiri , Kiyoshi Sato
IPC分类号： G01B7/30 , G01R33/02
CPC分类号： G01R33/093 , B82Y25/00
摘要： A magnetic detection device capable of reducing current consumption includes a second series circuit connected in parallel to a first series circuit. The first series circuit includes a first magneto-resistance element, and a third series circuit 30 includes a second magneto-resistance element. The second series circuit includes fixed resistance elements. Electric resistance of the fixed resistance elements is larger than those of respective resistance elements included in a sensor unit, thereby reducing current consumption.
摘要翻译：能够降低电流消耗的磁检测装置包括与第一串联电路并联连接的第二串联电路。第一串联电路包括第一磁阻元件，第三串联电路30包括第二磁阻元件。第二串联电路包括固定电阻元件。固定电阻元件的电阻大于包含在传感器单元中的各个电阻元件的电阻，从而降低电流消耗。

8. 发明申请

US20070229068A1 MAGNETIC DETECTION DEVICE HAVING MAGNETIC DETECTION ELEMENT IN MAGNETIC DETECTION CIRCUIT AND FABRICATING METHOD THEREOF 有权
标题翻译：具有磁性检测电路的磁性检测元件的磁性检测装置及其制造方法
公开(公告)号：US20070229068A1
公开(公告)日：2007-10-04
申请号：US11692823
申请日：2007-03-28
申请人： Yoshito Sasaki , Hideki Gochou , Kiyoshi Sato
发明人： Yoshito Sasaki , Hideki Gochou , Kiyoshi Sato
IPC分类号： G01R33/02
CPC分类号： G01R33/09
摘要： A magnetic detection device of which an output can be completely switched over with an external magnetic field is formed in a small size. A detection circuit is formed by forming circuit elements such as an active element layer and interconnection layers on a substrate. An insulating layer is formed on the detection circuit, and a flat surface is formed on the resultant surface. A magnetic detection element that detects an external magnetic field by using a magneto-resistance effect and a fixed resistance element, which has the same electric resistance as the magnetic detection element but does not react to the external magnetic field, are formed on the flat surface. Electrode layers and a lead layer are formed on the flat surface, and the lead layer and the interconnection layer are electrically connected to each other via a bump penetrating the insulating layer. The magnetic detection element and the fixed resistance element are formed on the flat surface of the insulating layer, thereby forming a small magnetic detection device.
摘要翻译：能够以外部磁场将输出完全切换的磁检测装置形成为小尺寸。通过在衬底上形成诸如有源元件层和互连层的电路元件来形成检测电路。在检测电路上形成绝缘层，在所得表面上形成平坦表面。通过使用具有与磁检测元件相同但不与外部磁场反应的电阻的磁阻效应和固定电阻元件来检测外部磁场的磁检测元件形成在平面上。电极层和引线层形成在平坦表面上，并且引线层和互连层通过穿过绝缘层的凸块彼此电连接。磁性检测元件和固定电阻元件形成在绝缘层的平坦表面上，从而形成小的磁性检测装置。

9. 发明申请

US20070229067A1 MAGNETIC SENSOR HAVING RESISTANCE ADJUSTING UNIT AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：具有电阻调节单元的磁传感器及其制造方法
公开(公告)号：US20070229067A1
公开(公告)日：2007-10-04
申请号：US11692788
申请日：2007-03-28
申请人： Yoshito Sasaki , Kiyoshi Sato
发明人： Yoshito Sasaki , Kiyoshi Sato
IPC分类号： G01R33/02
CPC分类号： G01R33/093 , B82Y25/00
摘要： A magnetic sensor capable of properly reducing a deviation of a central potential and a method of manufacturing the magnetic sensor are provided. A conductor is connected to an end of a fixed resistance element. The conductor includes a plurality of divisional path pieces and a common path piece. A current path length in a longitudinal direction of the conductor 35 is varied by cutting a part of the common path piece, thereby adjusting the resistance.
摘要翻译：提供能够适当地减小中心电位偏差的磁传感器和制造磁传感器的方法。导体连接到固定电阻元件的端部。导体包括多个分割路径片和公共路径片。通过切割公共路径片的一部分来改变导体35的纵向的电流路径长度，从而调整电阻。

10. 发明授权

US06844998B2 Magnetoresistive sensor capable of narrowing gap and track width 失效
标题翻译：磁阻传感器能够缩小间隙和轨道宽度
公开(公告)号：US06844998B2
公开(公告)日：2005-01-18
申请号：US10103359
申请日：2002-03-20
申请人： Daigo Aoki , Kenji Honda , Kiyoshi Sato , Naoya Hasegawa , Yukie Nakazawa
发明人： Daigo Aoki , Kenji Honda , Kiyoshi Sato , Naoya Hasegawa , Yukie Nakazawa
IPC分类号： G01R33/09 , G11B5/39 , H01L43/08
CPC分类号： G11B5/3903 , H01L43/08
摘要： Assuming that a distance between an upper shield layer and a lower shield layer in an area, which overlaps only a first electrode layer, but does not overlap a second electrode layer, is G1s, and a distance between the upper shield layer and the lower shield layer at a position in alignment with a center of a multilayered film is G1c, a difference in value between G1s and G1c is set to be not larger than a predetermined value, whereby an effective track (read) width can be reduced.
摘要翻译：假设在仅与第一电极层重叠但不与第二电极层重叠的区域中的上屏蔽层和下屏蔽层之间的距离为G1s，并且上屏蔽层和下屏蔽层之间的距离在与多层膜的中心对准的位置处的层是G1c，G1s和G1c之间的值之差被设定为不大于预定值，从而可以减少有效的轨迹（读取）宽度。

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