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1. 发明授权

US6083657A Positive photoresist compositions and a process for producing the same 有权
标题翻译：正型光致抗蚀剂组合物及其制造方法
公开(公告)号：US6083657A
公开(公告)日：2000-07-04
申请号：US231826
申请日：1999-01-15
申请人： Shinichi Kono , Yasuo Masuda , Atsushi Sawano , Hayato Ohno , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Shinichi Kono , Yasuo Masuda , Atsushi Sawano , Hayato Ohno , Hidekatsu Kohara , Toshimasa Nakayama
IPC分类号： C08G8/08 , C08G8/26 , C08L61/06 , C08L61/14 , G03F7/022 , G03F7/023 , G03F7/30
CPC分类号： G03F7/0236 , C08G8/08 , C08G8/26 , C08L61/06 , C08L61/14 , G03F7/022
摘要： Phenolic compound (a) is polycondensed with mixed aldehyde (b) consisting essentially of 5-30 mol % of unsaturated aliphatic aldehyde (b-1) and 70-95 mol % of saturated aliphatic aldehyde (b-2) to give alkali-soluble novolak resin (A) as the product of polycondensation reaction. The alkali-soluble novolak resin (A) is used with quinonediazido group containing compound (B) to produce a positive photoresist composition. According to the present invention, there are specifically provided a positive photoresist composition that has high feature integrity in spite of high sensitivity and which yet provides a great depth of focus, a process for producing such positive photoresist composition, as well as an alkali-soluble novolak resin that can advantageously be used in such composition, and a method of forming patterns with high reproducibility using such positive photoresist composition.
摘要翻译：酚醛化合物（a）与基本上由5-30mol％不饱和脂族醛（b-1）和70-95mol％饱和脂族醛（b-2）组成的混合醛（b）缩聚，得到碱溶性酚醛清漆树脂（A）作为缩聚反应的产物。与含醌二叠氮基的化合物（B）一起使用碱溶性酚醛清漆树脂（A）以产生正型光致抗蚀剂组合物。根据本发明，具体地提供了一种正光致抗蚀剂组合物，尽管具有高灵敏度并且仍然提供了很大的聚焦深度，但具有高特征完整性，制备这种正性光致抗蚀剂组合物的方法以及碱溶性可以有利地用于这种组合物中的酚醛清漆树脂，以及使用这种正性光致抗蚀剂组合物形成具有高再现性的图案的方法。

2. 发明授权

US5604077A Positive-working photoresist composition comprising a novolac resin made in butyrolactone as a solvent 失效
标题翻译：正性光致抗蚀剂组合物，其包含在丁内酯作为溶剂制备的酚醛清漆树脂
公开(公告)号：US5604077A
公开(公告)日：1997-02-18
申请号：US603601
申请日：1996-02-21
申请人： Shinichi Kono , Hayato Ohno , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Shinichi Kono , Hayato Ohno , Hidekatsu Kohara , Toshimasa Nakayama
IPC分类号： G03F7/022 , C08G8/08 , C08L61/04 , C08L61/06 , G03F7/023 , H01L21/027
CPC分类号： G03F7/0236 , C08G8/08
摘要： Proposed is an improved positive-working photoresist composition for use in the photolithographic patterning works for the manufacture of semiconductor devices, which is capable of giving a patterned resist layer on a substrate surface having excellent resolution and heat resistance without formation of scum in the development treatment. The photoresist composition comprises: (a) an alkali-soluble novolac resin as a film-forming ingredient and (b) a naphthoquinone diazide group-containing compound as a photosensitizing ingredient, of which the novolac resin is a condensation product of a phenolic compound and an aldehyde compound, the condensation reaction being undertaken in a solvent system containing, in addition to water, .gamma.-butyrolactone or a combination of .gamma.-butyrolactone and a propyleneglycol monoalkyl ether in a limited proportion.
摘要翻译：提出了一种用于制造半导体器件的光刻图案化工艺中的改进的正性光致抗蚀剂组合物，其能够在显影处理中不形成浮渣的情况下在具有优异的分辨率和耐热性的基板表面上形成图案化的抗蚀剂层。光致抗蚀剂组合物包括：（a）作为成膜成分的碱溶性酚醛清漆树脂和（b）含萘醌二叠氮基的化合物作为光敏成分，其中酚醛清漆树脂是酚类化合物和醛化合物，缩合反应在除水中的γ-丁内酯或γ-丁内酯和丙二醇单烷基醚的组合之外还含有有限的比例进行。

3. 发明授权

US5702862A Positive photoresist coating solution comprising a mixed solvent of propylene glycol monopropyl ether and 2-heptanone 失效
标题翻译：包含丙二醇单丙基醚和2-庚酮的混合溶剂的正性光致抗蚀剂涂料溶液
公开(公告)号：US5702862A
公开(公告)日：1997-12-30
申请号：US797663
申请日：1997-01-31
申请人： Hayato Ohno , Taku Nakao , Hisanobu Harada , Shinichi Hidesaka , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Hayato Ohno , Taku Nakao , Hisanobu Harada , Shinichi Hidesaka , Hidekatsu Kohara , Toshimasa Nakayama
IPC分类号： C09D5/00 , C09D11/00 , C09D161/02 , C09D161/04 , G03F7/004 , G03F7/022 , G03F7/20 , H01L21/027 , G03F7/023
CPC分类号： G03F7/0048 , G03F7/022
摘要： A positive photoresist coating solution comprising (a) an alkali-soluble resin, (b) a quinone diazide group-containing compound, and (c) an organic solvent in an amount sufficient for dissolving said (a) and (b) components, wherein said organic solvent contains (i) propylene glycol monopropyl ether and (ii) 2-heptanone. The solution of the present invention exhibits excellent coating ability, sensitivity, thermostability, focal depth range, shape-profiling ability, and the like.
摘要翻译：一种正型光致抗蚀剂涂料溶液，其包含（a）碱溶性树脂，（b）含醌二叠氮化物基团的化合物和（c）足以溶解所述（a）和（b）组分的量的有机溶剂，其中所述有机溶剂含有（i）丙二醇单丙醚和（ii）2-庚酮。本发明的溶液表现出优异的涂布能力，灵敏度，热稳定性，焦深范围，形状分布能力等。

4. 发明授权

US5332647A Positive-working quinone diazide composition containing N,N',N"-substituted isocyanurate compound and associated article 失效
标题翻译：含N，N'，N“ - 取代的异氰脲酸酯化合物和相关制品的正性醌醌二叠氮化合物组合物
公开(公告)号：US5332647A
公开(公告)日：1994-07-26
申请号：US111179
申请日：1993-08-24
申请人： Hayato Ohno , Nobuo Tokutake , Satoshi Niikura , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Hayato Ohno , Nobuo Tokutake , Satoshi Niikura , Hidekatsu Kohara , Toshimasa Nakayama
IPC分类号： G03F7/022 , G03F7/09 , G03C1/61 , G03F7/023
CPC分类号： G03F7/0226
摘要： A positive-working photosensitive resin composition useful as a photoresist material in the fine patterning work for the manufacture of semiconductor devices is proposed. The composition is excellent in the storage stability and capable of giving a patterned resist layer having good film thickness retention, cross sectional profile of line patterns, resolution and heat resistance. The composition comprises, in addition to a conventional alkali-soluble novolac resin as a film-forming agent and a quinone diazide group containing compound as a photosensitizing agent, a specific isocyanurate compound substituted at each nitrogen atom with a hydroxy- and ter-butyl-substituted benzyl group.
摘要翻译：提出了用于制造半导体器件的精细图案化工作中用作光致抗蚀剂材料的正性感光性树脂组合物。该组合物的保存稳定性优异，能够得到具有良好的膜厚保持性，线图案的横截面轮廓，分辨率和耐热性的图案化抗蚀剂层。该组合物除了常规的作为成膜剂的碱溶性酚醛清漆树脂和含有醌二叠氮基的化合物作为感光剂之外，还包括在每个氮原子处被羟基和叔丁基取代的异氰脲酸酯化合物，取代的苄基。

5. 发明授权

US06312863B1 Positive photoresist composition 失效
标题翻译：正光致抗蚀剂组合物
公开(公告)号：US06312863B1
公开(公告)日：2001-11-06
申请号：US09618723
申请日：2000-07-18
申请人： Shinichi Hidesaka , Atsushi Sawano , Kousuke Doi , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Shinichi Hidesaka , Atsushi Sawano , Kousuke Doi , Hidekatsu Kohara , Toshimasa Nakayama
IPC分类号： G03F7023
CPC分类号： G03F7/022
摘要： A positive photoresist composition includes (A) an alkali-soluble resin, and (B) a photosensitizer including an ester of a 1,2-naphthoquinonediazidesulfonyl compound with a compound of the following formula (I). This positive photoresist composition has satisfactory sensitivity, definition, and depth of focus properties, can form both dense patterns and isolation patterns with good shapes in the formation of mixed resist patterns, and can minimize inverted taper shape formation of isolation resist patterns induced by shifts of focal depth to the minus side.
摘要翻译：正型光致抗蚀剂组合物包括（A）碱溶性树脂和（B）包含1,2-萘醌二叠氮化物化合物的酯与下式（I）的化合物的光敏剂。这种正性光致抗蚀剂组合物具有令人满意的灵敏度，定义和深度聚焦性能，可以在形成混合抗蚀剂图案时形成具有良好形状的致密图案和隔离图案，并且可以最小化反转锥形形成由隔离焦点深度为负侧。

6. 发明授权

US5576138A Positive-working naphtho quinone diazide sulfonic acid ester photoresist composition containing select combination of additives 失效
标题翻译：正性萘醌醌二叠氮磺酸酯光致抗蚀剂组合物含有选择性组合的添加剂
公开(公告)号：US5576138A
公开(公告)日：1996-11-19
申请号：US423722
申请日：1995-04-18
申请人： Yoshito Ando , Atsushi Sawano , Nobuo Tokutake , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Yoshito Ando , Atsushi Sawano , Nobuo Tokutake , Hidekatsu Kohara , Toshimasa Nakayama
IPC分类号： G03F7/004 , G03F7/022 , G03F7/09 , H01L21/027 , G03F7/023
CPC分类号： G03F7/0226 , G03F7/091
摘要： Disclosed is a positive-working photoresist composition used in the photolithographic patterning work for the manufacture of various electronic devices such as VLSIs having improved characteristics, in particular, in respect of the halation-preventing effect. In addition to the conventional ingredients of (a) an alkali-soluble novolac resin as a film-forming agent and (b) a naphthoquinonediazide group-containing compound as a photosensitizing agent, the composition is formulated by the admixture of a specific amount of (c) a halation-preventing agent which is a combination of, one, (c1) a 4,4'-bis(dialkylamino) benzophenone compound and, the other, (c2) a compound selected from the group consisting of polyhydroxy benzophenone compounds, amino- and hydroxy-containing benzophenone compounds and 4-pyrazolylazo compounds in a specific weight proportion of (c1):(c2).
摘要翻译：公开了用于制造具有改进特性的各种电子器件如VLSI的光刻图形工作中的正性光致抗蚀剂组合物，特别是关于防止晕影效果。除了（a）作为成膜剂的碱溶性酚醛清漆树脂和（b）含有萘醌二叠氮化物基的化合物作为感光剂的常规成分之外，还通过混合特定量的（ c）一种防晕剂，其是一种（c1）4,4'-双（二烷基氨基）二苯甲酮化合物的组合，另一种是（c2）选自多羟基二苯甲酮化合物，氨基和羟基的二苯甲酮化合物和4-吡唑基偶氮化合物，其特定重量比例为（c1）:( c2）。

7. 发明授权

US5728504A Positive photoresist compositions and multilayer resist materials using the same 失效
标题翻译：正型光致抗蚀剂组合物和使用其的多层抗蚀剂材料
公开(公告)号：US5728504A
公开(公告)日：1998-03-17
申请号：US652389
申请日：1996-05-23
申请人： Hiroshi Hosoda , Satoshi Niikura , Atsushi Sawano , Tatsuya Hashiguchi , Kazuyuki Nitta , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Hiroshi Hosoda , Satoshi Niikura , Atsushi Sawano , Tatsuya Hashiguchi , Kazuyuki Nitta , Hidekatsu Kohara , Toshimasa Nakayama
IPC分类号： G03F7/11 , G03F7/022 , G03F7/26 , H01L21/027 , G03F7/023
CPC分类号： G03F7/022
摘要： A positive photoresist composition comprising (A) an alkali-soluble resin and (B) a light-sensitive component comprising at least one compound represented by the following general formula (I): ##STR1## where R.sup.1, R.sup.2 and R.sup.3 are each independently a hydrogen atom, an alkyl group having 1-3 carbon atoms or an alkoxy group having 1-3 carbon atoms; R.sup.4 is a hydrogen atom or an alkyl group having 1-3 carbon atoms; a, b and c are an integer of 1-3; l, m and n are an integer of 1-3, in which at least part of the hydroxyl groups present are esterified with a quinonediazidosulfonic acid and a sulfonic acid which has a group represented by the following formula (II): --SO.sub.2 --R.sup.5 (II) where R.sup.5 is a substituted or unsubstituted alkyl group, an alkenyl group or a substituted or unsubstituted aryl group, thereby forming a mixed ester, and a multilayer resist material in which a positive photoresist layer formed of said positive photoresist composition is provided on an anti-reflective coating over a substrate are capable of forming high-resolution resist patterns with good cross-sectional profiles and permit a wider margin of exposure and better depth-of-focus characteristics.
摘要翻译：一种正性光致抗蚀剂组合物，其包含（A）碱溶性树脂和（B）包含至少一种由以下通式（I）表示的化合物的光敏性组分：其中R 1，R 2和R 3是各自独立地为氢原子，具有1-3个碳原子的烷基或具有1-3个碳原子的烷氧基; R4是氢原子或具有1-3个碳原子的烷基; a，b和c为1-3的整数; l，m和n是1-3的整数，其中存在的羟基的至少一部分与醌二叠氮磺酸和具有下式（II）表示的基团的磺酸酯化：-SO 2 -R 5 （II）其中R5是取代或未取代的烷基，烯基或取代或未取代的芳基，从而形成混合酯，以及多层抗蚀剂材料，其中由所述正性光致抗蚀剂组合物形成的正性光致抗蚀剂层设置在衬底上的抗反射涂层能够形成具有良好横截面轮廓的高分辨率抗蚀剂图案，并允许更宽的曝光余量和更好的聚焦深度特性。

8. 发明授权

US5853948A Positive photoresist compositions and multilayer resist materials using the same 失效
标题翻译：正型光致抗蚀剂组合物和使用其的多层抗蚀剂材料
公开(公告)号：US5853948A
公开(公告)日：1998-12-29
申请号：US960621
申请日：1997-10-29
申请人： Atsushi Sawano , Junichi Mizuta , Kousuke Doi , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Atsushi Sawano , Junichi Mizuta , Kousuke Doi , Hidekatsu Kohara , Toshimasa Nakayama
IPC分类号： G03F7/004 , G03F7/022 , G03F7/023 , G03F7/11 , H01L21/027
CPC分类号： G03F7/0226
摘要： A positive photoresist composition comprising (A) an alkali-soluble resin; (B) a quinonediazido group containing compound; and (C) at least one sulfonyl halide represented by the following general formula (I): R.sup.1 --SO.sub.2 --X (I) where R.sup.1 is an alkyl group, a substituted alkyl group, an alkenyl group, an aryl group or a substituted aryl group; X is a halogen atom, as well as a multilayer resist material using this composition. Very fine (
摘要翻译：一种正性光致抗蚀剂组合物，其包含（A）碱溶性树脂; （B）含有醌二叠氮基的化合物; 和（C）由以下通式（I）表示的至少一种磺酰卤：R1-SO2-X（Ⅰ）其中R1是烷基，取代的烷基，烯基，芳基或取代的芳基组; X是卤素原子，以及使用该组合物的多层抗蚀剂材料。可以形成具有高特征或边缘完整性的非常精细（<0.4μm）抗蚀剂图案，其在显影后在暴露区域和未曝光区域之间提供良好的对比度，并且确保更宽的曝光幅度，更好的聚焦深度特征和更清晰的截面轮廓。

9. 发明授权

US06517993B2 Copolymer, photoresist composition, and process for forming resist pattern with high aspect ratio 失效
标题翻译：共聚物，光致抗蚀剂组合物和用于形成具有高纵横比的抗蚀剂图案的工艺
公开(公告)号：US06517993B2
公开(公告)日：2003-02-11
申请号：US09901646
申请日：2001-07-11
申请人： Tsuyoshi Nakamura , Taeko Ikegawa , Atsushi Sawano , Kousuke Doi , Hidekatsu Kohara
发明人： Tsuyoshi Nakamura , Taeko Ikegawa , Atsushi Sawano , Kousuke Doi , Hidekatsu Kohara
IPC分类号： G03F7004
CPC分类号： G03F7/0397 , G03F7/0382 , G03F7/0758 , G03F7/405 , Y10S430/111
摘要： A novel copolymer includes a repeating unit (A) represented by, for example, Formula (I) below, and a repeating unit (B) derived from an unsaturated carboxylic anhydride. The novel copolymer is suitable for the preparation of a photoresist composition that has satisfactory transparency, high sensitivity and definition and exhibits satisfactory DOF properties in the field of photolithography using a deep UV light source. By the use of the photoresist composition, a process forms a resist pattern with a high aspect ratio.
摘要翻译：新型共聚物包括由例如下式（I）表示的重复单元（A）和由不饱和羧酸酐衍生的重复单元（B）。新型共聚物适用于具有令人满意的透明度，高灵敏度和清晰度的光致抗蚀剂组合物的制备，并且在使用深UV光源的光刻领域中表现出令人满意的DOF特性。通过使用光致抗蚀剂组合物，工艺形成具有高纵横比的抗蚀剂图案。

10. 发明授权

US06939926B2 Phenol novolak resin, production process thereof, and positive photoresist composition using the same 有权
标题翻译：苯酚酚醛清漆树脂，其制备方法和使用其的正性光致抗蚀剂组合物
公开(公告)号：US06939926B2
公开(公告)日：2005-09-06
申请号：US10773294
申请日：2004-02-09
申请人： Ken Miyagi , Yasuhide Ohuchi , Atsuko Hirata , Kousuke Doi , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Ken Miyagi , Yasuhide Ohuchi , Atsuko Hirata , Kousuke Doi , Hidekatsu Kohara , Toshimasa Nakayama
IPC分类号： C08G8/10 , C08G14/04 , G03F7/023 , C08G8/28
CPC分类号： G03F7/0236 , C08G14/04
摘要： A phenol novolak resin has a peak intensity ratio of ortho-ortho bond (o-o)/ortho-para bond (o-p)/para-para bond (p-p) in a resin structure not substantially varying in each molecular weight fraction and has a weight average molecular weight (Mw) of 3000 to 20000 in terms of polystyrene, which peak intensity ratio is detected by 13C-NMR analysis. The phenol novolak resin can form both dense pattern and isolation pattern with good shapes in the formation of a fine resist pattern of not more than 0.35 μm and has satisfactory sensitivity, definition, and focal depth range properties, and has a resin composition being uniform in each molecular weight fraction. A process for producing the phenol novolak resin, and a positive photoresist composition using the resin are also provided.
摘要翻译：苯酚酚醛清漆树脂在每个分子量分数基本上不变的树脂结构中具有邻 - 邻键（oo）/邻 - 对键（op）/对 - 对位键（pp）的峰强度比，并具有重均分子量分子量（Mw）为聚苯乙烯换算为3000〜20000，通过13 C-NMR分析检测出峰强度比。苯酚酚醛清漆树脂可以形成具有不大于0.35μm的精细抗蚀剂图案的良好形状的致密图案和隔离图案，并且具有令人满意的灵敏度，定义和焦深范围性质，并且具有均匀的树脂组合物每个分子量分数。还提供了一种制备苯酚酚醛清漆树脂的方法和使用该树脂的正性光致抗蚀剂组合物。

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