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1. 发明申请

US20090220889A1 PHOTOSENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN 有权
标题翻译：光敏树脂组合物和形成图案的方法
公开(公告)号：US20090220889A1
公开(公告)日：2009-09-03
申请号：US12092701
申请日：2006-10-10
申请人： Kazufumi Sato , Yasushi Fujii , Hisanobu Harada , Koji Yonemura , Isamu Takagi , Daisuke Kawana , Tomotaka Yamada , Toshikazu Takayama
发明人： Kazufumi Sato , Yasushi Fujii , Hisanobu Harada , Koji Yonemura , Isamu Takagi , Daisuke Kawana , Tomotaka Yamada , Toshikazu Takayama
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： G03F7/0392 , G03F7/0045 , G03F7/0757
摘要： A photosensitive resin composition which has a quenching function and satisfactory long-term stability and which, in particular, can be prevented from suffering sensitivity abnormality caused by change with time during storage (change from given sensitivity); and a method of forming a pattern from the composition. The resist composition contains a base resin comprising, as the main component, a silicon-containing polymer which is a siloxane or silsesquioxane polymer or the like, the composition containing, as a quencher, a specific sulfonium compound in place of a nitrogenous compound.
摘要翻译：具有淬火功能和令人满意的长期稳定性的感光性树脂组合物，特别是可以防止由于储存期间随着时间的变化而引起的敏感性异常（从给定的灵敏度变化）; 以及从组合物形成图案的方法。抗蚀剂组合物含有作为主要成分的含有硅氧烷或倍半硅氧烷聚合物等的含硅聚合物的基础树脂，该组合物含有作为猝灭剂的特定锍化合物代替含氮化合物。

2. 发明授权

US5702862A Positive photoresist coating solution comprising a mixed solvent of propylene glycol monopropyl ether and 2-heptanone 失效
标题翻译：包含丙二醇单丙基醚和2-庚酮的混合溶剂的正性光致抗蚀剂涂料溶液
公开(公告)号：US5702862A
公开(公告)日：1997-12-30
申请号：US797663
申请日：1997-01-31
申请人： Hayato Ohno , Taku Nakao , Hisanobu Harada , Shinichi Hidesaka , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Hayato Ohno , Taku Nakao , Hisanobu Harada , Shinichi Hidesaka , Hidekatsu Kohara , Toshimasa Nakayama
IPC分类号： C09D5/00 , C09D11/00 , C09D161/02 , C09D161/04 , G03F7/004 , G03F7/022 , G03F7/20 , H01L21/027 , G03F7/023
CPC分类号： G03F7/0048 , G03F7/022
摘要： A positive photoresist coating solution comprising (a) an alkali-soluble resin, (b) a quinone diazide group-containing compound, and (c) an organic solvent in an amount sufficient for dissolving said (a) and (b) components, wherein said organic solvent contains (i) propylene glycol monopropyl ether and (ii) 2-heptanone. The solution of the present invention exhibits excellent coating ability, sensitivity, thermostability, focal depth range, shape-profiling ability, and the like.
摘要翻译：一种正型光致抗蚀剂涂料溶液，其包含（a）碱溶性树脂，（b）含醌二叠氮化物基团的化合物和（c）足以溶解所述（a）和（b）组分的量的有机溶剂，其中所述有机溶剂含有（i）丙二醇单丙醚和（ii）2-庚酮。本发明的溶液表现出优异的涂布能力，灵敏度，热稳定性，焦深范围，形状分布能力等。

3. 发明申请

US20080312400A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, AND RESIST UNDERLAYER FILM 审中-公开
标题翻译：用于形成电阻膜的组合物和耐下漆膜
公开(公告)号：US20080312400A1
公开(公告)日：2008-12-18
申请号：US12137483
申请日：2008-06-11
申请人： Naoki YAMASHITA , Daisuke Kawana , Hisanobu Harada , Koji Yonemura
发明人： Naoki YAMASHITA , Daisuke Kawana , Hisanobu Harada , Koji Yonemura
IPC分类号： G03F7/004 , C08G77/28 , C08G77/04
CPC分类号： G03F7/091 , C08G77/28 , C08L83/08 , G03F7/0752
摘要： A composition for forming a resist underlayer film of the present invention is capable of forming a resist underlayer film which has a good matching property with a resist, by including a siloxane polymer component having a repeating unit which contains a monovalent organic group containing a sulfur atom. Thus, the composition of the resist layer film capable of forming a resist underlayer film which has a good matching property with a resist is realized.
摘要翻译：用于形成本发明的抗蚀剂下层膜的组合物能够通过包含具有含有含有硫原子的一价有机基团的重复单元的硅氧烷聚合物组分，形成与抗蚀剂具有良好匹配性的抗蚀剂下层膜。因此，实现了能够形成与抗蚀剂具有良好匹配性能的抗蚀剂下层膜的抗蚀剂层膜的组成。

4. 发明授权

US08178284B2 Method of forming pattern 有权
标题翻译：形成图案的方法
公开(公告)号：US08178284B2
公开(公告)日：2012-05-15
申请号：US12440711
申请日：2007-09-21
申请人： Shinichi Kohno , Hisanobu Harada
发明人： Shinichi Kohno , Hisanobu Harada
IPC分类号： G03F7/36 , G03F7/22 , G03F7/30 , G03F7/039 , G03F7/075
CPC分类号： G03F7/11 , G03F7/0035 , G03F7/0392 , G03F7/0752
摘要： A method of forming a pattern including: forming an underlayer film on a support using an underlayer film-forming material, forming a hard mask on the underlayer film using a silicon-based hard mask-forming material, forming a first resist film by applying a chemically amplified positive resist composition to the hard mask, forming a first resist pattern by selectively exposing the first resist film through a first mask pattern and then performing developing, forming a first pattern by etching the hard mask using the first resist pattern as a mask, forming a second resist film by applying a chemically amplified positive silicon-based resist composition to the first pattern and the underlayer film, forming a second resist pattern by selectively exposing the second resist film through a second mask pattern and then performing developing, and forming a second pattern by etching the underlayer film using the first pattern and the second resist pattern as a mask.
摘要翻译：一种形成图案的方法，包括：使用下层膜形成材料在支撑体上形成下层膜，使用硅基硬掩模形成材料在下层膜上形成硬掩模，通过施加第一抗蚀剂膜通过将第一抗蚀剂膜选择性地暴露于第一掩模图案然后进行显影，形成第一抗蚀剂图案，通过使用第一抗蚀剂图案作为掩模蚀刻硬掩模来形成第一图案，形成第一抗蚀剂图案，通过向第一图案和下层膜施加化学放大的正硅基抗蚀剂组合物形成第二抗蚀剂膜，通过使第二抗蚀剂膜通过第二掩模图案选择性地曝光，然后进行显影，形成第二抗蚀剂图案使用第一图案和第二抗蚀剂图案作为掩模蚀刻下层膜的第二图案。

5. 发明申请

US20090130595A1 Thermoacid Generator for Antireflection Film Formation, Composition for Antireflection Film Formation, and Antireflection Film Made Therefrom 有权
标题翻译：用于防反射膜形成的热酸发生器，用于防反射膜形成的组合物和由此制成的抗反射膜
公开(公告)号：US20090130595A1
公开(公告)日：2009-05-21
申请号：US11916575
申请日：2006-05-24
申请人： Daisuke Kawana , Yasushi Fujii , Hisanobu Harada , Naoki Yamashita
发明人： Daisuke Kawana , Yasushi Fujii , Hisanobu Harada , Naoki Yamashita
IPC分类号： G03F7/004 , C07C69/017
CPC分类号： G03F7/091
摘要： A thermoacid generator for antireflective film formation, characterized by being represented by the following formula (1): (wherein R1 represents C1-20 alkyl, alkenyl, oxoalkyl, or oxoalkenyl (hydrogen atoms in these groups may have been replaced with fluorine atoms); R2 represents linear, branched, or cyclic C1-20 alkyl, alkenyl, oxoalkyl, or oxoalkenyl, C6-20 aryl, or C7-12 aralkyl or aryloxoalkyl; R3 represents hydrogen or alkyl; and Y− represents a non-nucleophilic counter ion); a composition for forming an antireflective film; and an antireflective film made from the composition. With the thermoacid generator and composition, satisfactory etching resistance and the satisfactory ability to prevent the reflection of short-wavelength light (ability to absorb short-wavelength light) are attained. Furthermore, the antireflective film can inhibit an overlying photoresist film from generating a scum.
摘要翻译：用于抗反射膜形成的热酸发生器，其特征在于由下式（1）表示：（其中R 1表示C 1-20烷基，烯基，氧代烷基或氧代烯基（这些基团中的氢原子可被氟原子取代）; R 2表示直链，支链或环状C 1-20烷基，烯基，氧代烷基或氧代烯基，C 6-20芳基或C 7-12芳烷基或芳氧基烷基; R 3表示氢或烷基; Y-表示非亲核抗衡离子） ; 用于形成抗反射膜的组合物; 和由该组合物制成的抗反射膜。利用热酸发生器和组合物，可获得令人满意的耐蚀刻性和令人满意的防止短波长光反射（能够吸收短波长光）的能力。此外，抗反射膜可以抑制上覆的光致抗蚀剂膜产生浮渣。

6. 发明申请

US20060292488A1 Composition for formation of antireflection film, and antireflection film in which the same is used 审中-公开
标题翻译：用于形成防反射膜的组合物和使用其的抗反射膜
公开(公告)号：US20060292488A1
公开(公告)日：2006-12-28
申请号：US11446763
申请日：2006-06-05
申请人： Toshikazu Takayama , Yasushi Fujii , Hisanobu Harada , Koji Yonemura , Isamu Takagi , Daisuke Kawana , Kazufumi Sato
发明人： Toshikazu Takayama , Yasushi Fujii , Hisanobu Harada , Koji Yonemura , Isamu Takagi , Daisuke Kawana , Kazufumi Sato
IPC分类号： C08G77/26 , G03C1/00
CPC分类号： C08G77/20 , C08G77/14 , G03F7/0757 , G03F7/091
摘要： A composition for formation of an antireflection film having an excellent etching resistant characteristic and ability to prevent reflection of short-wavelength light (absorption ability of short-wavelength light) as well as excellent time dependent stability, and an antireflection film in which the same is used, are provided. A composition for formation of an antireflection film including a siloxane compound having a light-absorbing group and a crosslinking group, the siloxane compound being blocked with a capping group, is provided. By thus blocking the siloxane compound with a capping group, time dependent stability can be improved without deteriorating etching resistance, and ability to prevent reflection.
摘要翻译：用于形成具有优异的耐蚀刻特性和防止短波长光的反射（短波长光的吸收能力）以及优异的时间依赖稳定性的抗反射膜的组合物和其中相同的抗反射膜使用，提供。提供了一种用于形成包含具有光吸收基团和交联基团的硅氧烷化合物的抗反射膜的组合物，该硅氧烷化合物被封端基封端。通过这样用封端基封端硅氧烷化合物，可以提高时间依赖性的稳定性，而不会降低耐腐蚀性，防止反射的能力。

7. 发明授权

US08216763B2 Photosensitive resin composition and method of forming pattern 有权
标题翻译：感光树脂组合物及其形成方法
公开(公告)号：US08216763B2
公开(公告)日：2012-07-10
申请号：US12092701
申请日：2006-10-10
申请人： Kazufumi Sato , Yasushi Fujii , Hisanobu Harada , Koji Yonemura , Isamu Takagi , Daisuke Kawana , Tomotaka Yamada , Toshikazu Takayama
发明人： Kazufumi Sato , Yasushi Fujii , Hisanobu Harada , Koji Yonemura , Isamu Takagi , Daisuke Kawana , Tomotaka Yamada , Toshikazu Takayama
IPC分类号： G03F7/004 , G03F7/30
CPC分类号： G03F7/0392 , G03F7/0045 , G03F7/0757
摘要： A photosensitive resin composition which has a quenching function and satisfactory long-term stability and which, in particular, can be prevented from suffering sensitivity abnormality caused by change with time during storage (change from given sensitivity); and a method of forming a pattern from the composition. The resist composition contains a base resin comprising, as the main component, a silicon-containing polymer which is a siloxane or silsesquioxane polymer or the like, the composition containing, as a quencher, a specific sulfonium compound in place of a nitrogenous compound.
摘要翻译：具有淬火功能和令人满意的长期稳定性的感光性树脂组合物，特别是可以防止由于储存期间随着时间的变化而引起的敏感性异常（从给定的灵敏度变化）; 以及从组合物形成图案的方法。抗蚀剂组合物含有作为主要成分的含有硅氧烷或倍半硅氧烷聚合物等的含硅聚合物的基础树脂，该组合物含有特定的锍化合物代替含氮化合物作为猝灭剂。

8. 发明授权

US07785768B2 Thermoacid generator for antireflection film formation, composition for antireflection film formation, and antireflection film made therefrom 有权
标题翻译：用于防反射膜形成的热酸发生器，用于防反射膜形成的组合物和由其制成的抗反射膜
公开(公告)号：US07785768B2
公开(公告)日：2010-08-31
申请号：US11916575
申请日：2006-05-24
申请人： Daisuke Kawana , Yasushi Fujii , Hisanobu Harada , Naoki Yamashita
发明人： Daisuke Kawana , Yasushi Fujii , Hisanobu Harada , Naoki Yamashita
IPC分类号： G03F7/11 , H01L21/027
CPC分类号： G03F7/091
摘要： A thermoacid generator for antireflective film formation, characterized by being represented by the following formula (1): (wherein R1 represents C1-20 alkyl, alkenyl, oxoalkyl, or oxoalkenyl (hydrogen atoms in these groups may have been replaced with fluorine atoms); R2 represents linear, branched, or cyclic C1-20 alkyl, alkenyl, oxoalkyl, or oxoalkenyl, C6-20 aryl, or C7-12 aralkyl or aryloxoalkyl; R3 represents hydrogen or alkyl; and Y− represents a non-nucleophilic counter ion); a composition for forming an antireflective film; and an antireflective film made from the composition. With the thermoacid generator and composition, satisfactory etching resistance and the satisfactory ability to prevent the reflection of short-wavelength light (ability to absorb short-wavelength light) are attained. Furthermore, the antireflective film can inhibit an overlying photoresist film from generating a scum.
摘要翻译：用于抗反射膜形成的热酸发生器，其特征在于由下式（1）表示：（其中R 1表示C 1-20烷基，烯基，氧代烷基或氧代烯基（这些基团中的氢原子可被氟原子取代）; R 2表示直链，支链或环状C 1-20烷基，烯基，氧代烷基或氧代烯基，C 6-20芳基或C 7-12芳烷基或芳氧基烷基; R 3表示氢或烷基; Y-表示非亲核抗衡离子） ; 用于形成抗反射膜的组合物; 和由该组合物制成的抗反射膜。利用热酸发生器和组合物，可获得令人满意的耐蚀刻性和令人满意的防止短波长光反射（能够吸收短波长光）的能力。此外，抗反射膜可以抑制上覆的光致抗蚀剂膜产生浮渣。

9. 发明申请

US20090280438A1 METHOD OF FORMING PATTERN 有权
标题翻译：形成图案的方法
公开(公告)号：US20090280438A1
公开(公告)日：2009-11-12
申请号：US12440711
申请日：2007-09-21
申请人： Shinichi Kohno , Hisanobu Harada
发明人： Shinichi Kohno , Hisanobu Harada
IPC分类号： G03F7/20
CPC分类号： G03F7/11 , G03F7/0035 , G03F7/0392 , G03F7/0752
摘要： A method of forming a pattern including: forming an underlayer film on a support using an underlayer film-forming material, forming a hard mask on the underlayer film using a silicon-based hard mask-forming material, forming a first resist film by applying a chemically amplified positive resist composition to the hard mask, forming a first resist pattern by selectively exposing the first resist film through a first mask pattern and then performing developing, forming a first pattern by etching the hard mask using the first resist pattern as a mask, forming a second resist film by applying a chemically amplified positive silicon-based resist composition to the first pattern and the underlayer film, forming a second resist pattern by selectively exposing the second resist film through a second mask pattern and then performing developing, and forming a second pattern by etching the underlayer film using the first pattern and the second resist pattern as a mask.
摘要翻译：一种形成图案的方法，包括：使用下层膜形成材料在支撑体上形成下层膜，使用硅基硬掩模形成材料在下层膜上形成硬掩模，通过施加第一抗蚀剂膜通过将第一抗蚀剂膜选择性地暴露于第一掩模图案然后进行显影，形成第一抗蚀剂图案，通过使用第一抗蚀剂图案作为掩模蚀刻硬掩模来形成第一图案，形成第一抗蚀剂图案，通过向第一图案和下层膜施加化学放大的正硅基抗蚀剂组合物形成第二抗蚀剂膜，通过使第二抗蚀剂膜通过第二掩模图案选择性地曝光，然后进行显影，形成第二抗蚀剂图案使用第一图案和第二抗蚀剂图案作为掩模蚀刻下层膜的第二图案。

10. 发明申请

US20060263702A1 Composition for forming intermediate layer containing sylylphenylene-based polymer and pattern-forming method 审中-公开
标题翻译：用于形成含有亚苯基亚苯基聚合物的中间层的组合物和图案形成方法
公开(公告)号：US20060263702A1
公开(公告)日：2006-11-23
申请号：US11432689
申请日：2006-05-11
申请人： Naoki Yamashita , Hisanobu Harada , Yasushi Fujii , Yoshinori Sakamoto
发明人： Naoki Yamashita , Hisanobu Harada , Yasushi Fujii , Yoshinori Sakamoto
IPC分类号： G03F1/00
CPC分类号： G03F7/11 , C08G77/60 , C09D183/16 , G03F7/091
摘要： A composition for forming an intermediate layer is provided, having improved etching resistance, prevention of reflection of short-wavelength light (ability to absorb short-wavelength light), and low-hardening properties. The composition for forming an intermediate layer includes a silylphenylene-based polymer containing an aromatic ring (A), having a repetitive unit represented by the following general formula (1): wherein, at least one of R1 and R2 is a cross-linking group, m and n are each an integer from 0 to 20, and 1 is an integer representing the number of repetitive units; and a solvent (C).
摘要翻译：提供了一种用于形成中间层的组合物，具有改善的耐蚀刻性，防止短波长光的反射（吸收短波长光的能力）和低硬化性能。用于形成中间层的组合物包括含有芳环（A）的甲硅烷基亚苯基聚合物，其具有由以下通式（1）表示的重复单元：其中R 1，和R 2是交联基团，m和n各自为0至20的整数，1是表示重复单元数的整数; 和溶剂（C）。

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