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1. 发明授权

US07700937B2 Single-photon generating device, single-photon detecting device, and optical quantum gate 有权
标题翻译：单光子发生装置，单光子检测装置和光量子门
公开(公告)号：US07700937B2
公开(公告)日：2010-04-20
申请号：US11522421
申请日：2006-09-18
申请人： Shinichi Hirose , Motomu Takatsu , Tatsuya Usuki , Yasuhiko Arakawa
发明人： Shinichi Hirose , Motomu Takatsu , Tatsuya Usuki , Yasuhiko Arakawa
IPC分类号： H01L33/00
CPC分类号： H01L31/035281 , H01L31/02327 , H01L31/03046 , H01L33/20 , H01S5/0201 , Y02E10/50 , Y10S977/949 , Y10S977/95
摘要： A single-photon generating device is configured to have a solid substrate including abase portion, and a pillar portion which is formed on the surface side of the base portion with a localized level existent in the vicinity of the tip of the base portion. The above pillar portion is formed to have a larger cross section on the base portion side than the cross section on the tip side, so that the light generated from the localized level is reflected on the surface, propagated inside the pillar portion, and output from the back face side of the base portion.
摘要翻译：单光子产生装置被配置为具有包括基部的固体基板，并且在基部的尖端附近存在形成有位于基部的表面侧的柱部。上述柱部形成为在基部侧的截面比前端侧的截面大的截面，使得从局部水平产生的光在表面上反射，在柱部内传播，并从基部的背面侧。

2. 发明申请

US20070210299A1 Single-photon generating device, single-photon detecting device, and optical quantum gate 有权
标题翻译：单光子发生装置，单光子检测装置和光量子门
公开(公告)号：US20070210299A1
公开(公告)日：2007-09-13
申请号：US11522421
申请日：2006-09-18
申请人： Shinichi Hirose , Motomu Takatsu , Tatsuya Usuki , Yasuhiko Arakawa
发明人： Shinichi Hirose , Motomu Takatsu , Tatsuya Usuki , Yasuhiko Arakawa
IPC分类号： H01L29/06 , H01L29/12
CPC分类号： H01L31/035281 , H01L31/02327 , H01L31/03046 , H01L33/20 , H01S5/0201 , Y02E10/50 , Y10S977/949 , Y10S977/95
摘要： A single-photon generating device is configured to have a solid substrate including abase portion, and a pillar portion which is formed on the surface side of the base portion with a localized level existent in the vicinity of the tip of the base portion. The above pillar portion is formed to have a larger cross section on the base portion side than the cross section on the tip side, so that the light generated from the localized level is reflected on the surface, propagated inside the pillar portion, and output from the back face side of the base portion.
摘要翻译：单光子产生装置被配置为具有包括基部的固体基板，并且在基部的尖端附近存在形成有位于基部的表面侧的柱部。上述柱部形成为在基部侧的截面比前端侧的截面大的截面，使得从局部水平产生的光在表面上反射，在柱部内传播，并从基部的背面侧。

3. 发明授权

US07492901B2 Single-photon generator and single-photon generating method 有权
标题翻译：单光子发生器和单光子发生方法
公开(公告)号：US07492901B2
公开(公告)日：2009-02-17
申请号：US10779816
申请日：2004-02-18
申请人： Kazuya Takemoto , Tatsuya Usuki , Motomu Takatsu
发明人： Kazuya Takemoto , Tatsuya Usuki , Motomu Takatsu
IPC分类号： G02B6/00 , G02F1/03 , G02F1/07
CPC分类号： B82Y20/00 , G02F2/02 , H01S5/041 , H01S5/183 , H01S5/3412
摘要： A single-photon generator includes an exciton generation part including therein a quantum dot, an excitation part for generating an exciton in the exciton generator part, a recombination control part for controlling recombination timing of the exciton in the exciton generation part, and an optical window provided in the exciton generation part so as to pass a single photon formed as a result of recombination of the exciton, wherein the recombination control part causes, in the exciton generation part, recombination of the excitons at longer intervals than a recombination lifetime of a exciton molecule.
摘要翻译：单光子发生器包括激子生成部，其中包括量子点，用于在激子发生部中产生激子的激励部，用于控制激子生成部中的激子的复合定时的复合控制部，以及光窗设置在激子产生部分中，以便通过作为激子重组的结果形成的单个光子，其中复合控制部分在激子产生部分中引起激子以比激子的复合寿命更长的间隔的复合分子。

4. 发明授权

US07768692B2 Single-photon generator 有权
标题翻译：单光子发生器
公开(公告)号：US07768692B2
公开(公告)日：2010-08-03
申请号：US11633537
申请日：2006-12-05
申请人： Kazuya Takemoto , Tatsuya Usuki , Yasuhiko Arakawa
发明人： Kazuya Takemoto , Tatsuya Usuki , Yasuhiko Arakawa
IPC分类号： G02F1/1335 , H04L9/08
CPC分类号： H04B10/70 , G02F1/37 , H04L9/0858
摘要： A single-photon generator includes a single-photon generating device generating a single-photon pulse having a wavelength on the shorter wavelength side than a communication wavelength band, and a single-photon wavelength conversion device performing wavelength conversion of the single-photon pulse into a single-photon pulse of the communication wavelength band, using pump pulse light for single-photon wavelength conversion.
摘要翻译：单光子发生器包括产生具有比通信波长带更短波长侧的波长的单光子脉冲的单光子产生装置，以及执行单光子脉冲的波长转换的单光子波长转换装置通信波长带的单光子脉冲，使用泵浦脉冲光进行单光子波长转换。

5. 发明申请

US20070228373A1 Single-photon generator 有权
标题翻译：单光子发生器
公开(公告)号：US20070228373A1
公开(公告)日：2007-10-04
申请号：US11633537
申请日：2006-12-05
申请人： Kazuya Takemoto , Tatsuya Usuki , Yasuhiko Arakawa
发明人： Kazuya Takemoto , Tatsuya Usuki , Yasuhiko Arakawa
IPC分类号： H01L31/00 , H01L29/04 , H01L29/10
CPC分类号： H04B10/70 , G02F1/37 , H04L9/0858
摘要： A single-photon generator includes a single-photon generating device generating a single-photon pulse having a wavelength on the shorter wavelength side than a communication wavelength band, and a single-photon wavelength conversion device performing wavelength conversion of the single-photon pulse into a single-photon pulse of the communication wavelength band, using pump pulse light for single-photon wavelength conversion.
摘要翻译：单光子发生器包括产生具有比通信波长带更短波长侧的波长的单光子脉冲的单光子产生装置，以及执行单光子脉冲的波长转换的单光子波长转换装置通信波长带的单光子脉冲，使用泵浦脉冲光进行单光子波长转换。

6. 发明申请

US20070295977A1 Optical semiconductor device and method of manufacturing the same 有权
标题翻译：光半导体装置及其制造方法
公开(公告)号：US20070295977A1
公开(公告)日：2007-12-27
申请号：US11896154
申请日：2007-08-30
申请人： Shinichi Hirose , Tatsuya Usuki
发明人： Shinichi Hirose , Tatsuya Usuki
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01S5/34 , B82Y10/00 , B82Y20/00 , H01L33/385 , H01S5/0425 , H01S5/3412 , Y10S438/962 , Y10S977/774 , Y10S977/932
摘要： Provided is an optical semiconductor device, which includes a GaAs substrate (or a semiconductor substrate) 20; an n-type contact layer (or a doping layer) 21 formed on one surface 20a of the GaAs substrate 20; an active layer 25 formed on top of the n-type contact layer 21 and including at least one quantum dot 23; a p-type contact layer (or a contact layer) 26 formed on top of the active layer 25 and being of an opposite conduction type to the n-type contact layer 21; an insulating layer 29 formed on top of the p-type contact layer 26 and including a first opening 29a whose size is such that a contact region CR of the p-type contact layer 26 lies within the first opening 29a; a p-side electrode layer 33c formed on top of the contact region CR of the p-type contact layer 26 and on top of the insulating layer 29 and including a second opening 33a lying within the first opening 29a; and a n-side electrode layer (or a second electrode layer) 37 formed on the other surface 20b of the GaAs substrate 20.
摘要翻译：提供了包括GaAs衬底（或半导体衬底）20的光学半导体器件; 形成在GaAs衬底20的一个表面上的n型接触层（或掺杂层）21; 形成在n型接触层21的顶部并且包括至少一个量子点23的有源层25; 形成在有源层25顶部并且与n型接触层21具有相反导电型的p型接触层（或接触层）26; 形成在p型接触层26的顶部上的绝缘层29，包括第一开口29a，第一开口29a的尺寸使得p型接触层26的接触区域CR位于第一开口29a内; p型电极层33c，其形成在p型接触层26的接触区域CR的顶部和绝缘层29的顶部上，并且包括位于第一开口部21a内的第二开口部33a; 以及形成在GaAs衬底20的另一个表面20b上的n侧电极层（或第二电极层）37。

7. 发明授权

US07679076B2 Optical semiconductor device and method of manufacturing the same 有权
标题翻译：光半导体装置及其制造方法
公开(公告)号：US07679076B2
公开(公告)日：2010-03-16
申请号：US11896154
申请日：2007-08-30
申请人： Shinichi Hirose , Tatsuya Usuki
发明人： Shinichi Hirose , Tatsuya Usuki
IPC分类号： H01L29/06
CPC分类号： H01S5/34 , B82Y10/00 , B82Y20/00 , H01L33/385 , H01S5/0425 , H01S5/3412 , Y10S438/962 , Y10S977/774 , Y10S977/932
摘要： Provided is an optical semiconductor device, which includes a GaAs substrate (or a semiconductor substrate) 20; an n-type contact layer (or a doping layer) 21 formed on one surface 20a of the GaAs substrate 20; an active layer 25 formed on top of the n-type contact layer 21 and including at least one quantum dot 23; a p-type contact layer (or a contact layer) 26 formed on top of the active layer 25 and being of an opposite conduction type to the n-type contact layer 21; an insulating layer 29 formed on top of the p-type contact layer 26 and including a first opening 29a whose size is such that a contact region CR of the p-type contact layer 26 lies within the first opening 29a; a p-side electrode layer 33c formed on top of the contact region CR of the p-type contact layer 26 and on top of the insulating layer 29 and including a second opening 33a lying within the first opening 29a; and a n-side electrode layer (or a second electrode layer) 37 formed on the other surface 20b of the GaAs substrate 20.
摘要翻译：提供了包括GaAs衬底（或半导体衬底）20的光学半导体器件; 形成在GaAs衬底20的一个表面20a上的n型接触层（或掺杂层）21; 形成在n型接触层21的顶部并且包括至少一个量子点23的有源层25; 形成在有源层25顶部并且与n型接触层21具有相反导电型的p型接触层（或接触层）26; 形成在p型接触层26的顶部的绝缘层29，其包括尺寸使得p型接触层26的接触区域CR位于第一开口29a内的第一开口29a; p型电极层33c，其形成在p型接触层26的接触区域CR的顶部和绝缘层29的顶部，并且包括位于第一开口29a内的第二开口33a; 以及形成在GaAs衬底20的另一个表面20b上的n侧电极层（或第二电极层）37。

8. 发明授权

US07432153B2 Direct tunneling semiconductor memory device and fabrication process thereof 失效
标题翻译：直接隧道半导体存储器件及其制造工艺
公开(公告)号：US07432153B2
公开(公告)日：2008-10-07
申请号：US11898685
申请日：2007-09-14
申请人： Kouji Tsunoda , Tatsuya Usuki
发明人： Kouji Tsunoda , Tatsuya Usuki
IPC分类号： H01L21/336
CPC分类号： H01L27/11521 , H01L27/115 , H01L29/42324 , H01L29/7883
摘要： A direct-tunneling semiconductor memory device includes a device isolation structure formed on a semiconductor substrate, including a device isolation trench and a device isolation insulation film filling the device isolation trench, a dielectric film covering both sidewall surfaces and a top surface of a floating gate electrode formed on the semiconductor substrate, a conductive part provided on the sidewall surfaces of the floating gate electrode via the dielectric film, the conductor part constituting a part of a control gate electrode, and first and second diffusion regions formed at respective lateral sides of the floating gate electrode, wherein the first and second diffusion regions are formed on a surface of the device isolation groove with offset from a region right underneath the floating gate electrode, the conductive part is formed in the device region with offset from the device isolation trench.
摘要翻译：直接隧道半导体存储器件包括形成在半导体衬底上的器件隔离结构，包括器件隔离沟槽和填充器件隔离沟槽的器件隔离绝缘膜，覆盖两个侧壁表面的电介质膜和浮动栅极的顶表面形成在所述半导体基板上的电极，经由所述电介质膜设置在所述浮栅电极的侧壁面上的导电部，构成控制栅电极的一部分的导体部，以及形成在所述第一扩散区浮置栅电极，其中所述第一和第二扩散区形成在所述器件隔离槽的表面上，偏离所述浮置栅电极正下方的区域，所述导电部分形成在所述器件区域中，偏离所述器件隔离沟槽。

9. 发明申请

US20080057648A1 Direct tunneling semiconductor memory device and fabrication process thereof 失效
公开(公告)号：US20080057648A1
公开(公告)日：2008-03-06
申请号：US11898685
申请日：2007-09-14
申请人： Kouji Tsunoda , Tatsuya Usuki
发明人： Kouji Tsunoda , Tatsuya Usuki
IPC分类号： H01L21/336
CPC分类号： H01L27/11521 , H01L27/115 , H01L29/42324 , H01L29/7883
摘要： A direct-tunneling semiconductor memory device includes a device isolation structure formed on a semiconductor substrate, including a device isolation trench and a device isolation insulation film filling the device isolation trench, a dielectric film covering both sidewall surfaces and a top surface of a floating gate electrode formed on the semiconductor substrate, a conductive part provided on the sidewall surfaces of the floating gate electrode via the dielectric film, the conductor part constituting a part of a control gate electrode, and first and second diffusion regions formed at respective lateral sides of the floating gate electrode, wherein the first and second diffusion regions are formed on a surface of the device isolation groove with offset from a region right underneath the floating gate electrode, the conductive part is formed in the device region with offset from the device isolation trench.

10. 发明授权

US07288813B2 Direct tunneling semiconductor memory device and fabrication process thereof 失效
标题翻译：直接隧道半导体存储器件及其制造工艺
公开(公告)号：US07288813B2
公开(公告)日：2007-10-30
申请号：US11012277
申请日：2004-12-16
申请人： Kouji Tsunoda , Tatsuya Usuki
发明人： Kouji Tsunoda , Tatsuya Usuki
IPC分类号： H01L29/788
CPC分类号： H01L27/11521 , H01L27/115 , H01L29/42324 , H01L29/7883
摘要： A direct-tunneling semiconductor memory device includes a device isolation structure formed on a semiconductor substrate, including a device isolation trench and a device isolation insulation film filling the device isolation trench, a dielectric film covering both sidewall surfaces and a top surface of a floating gate electrode formed on the semiconductor substrate, a conductive part provided on the sidewall surfaces of the floating gate electrode via the dielectric film, the conductor part constituting a part of a control gate electrode, and first and second diffusion regions formed at respective lateral sides of the floating gate electrode, wherein the first and second diffusion regions are formed on a surface of the device isolation groove with offset from a region right underneath the floating gate electrode, the conductive part is formed in the device region with offset from the device isolation trench.
摘要翻译：直接隧道半导体存储器件包括形成在半导体衬底上的器件隔离结构，包括器件隔离沟槽和填充器件隔离沟槽的器件隔离绝缘膜，覆盖两个侧壁表面的电介质膜和浮动栅极的顶表面形成在所述半导体基板上的电极，经由所述电介质膜设置在所述浮栅电极的侧壁面上的导电部，构成控制栅电极的一部分的导体部，以及形成在所述第一扩散区浮置栅电极，其中所述第一和第二扩散区形成在所述器件隔离槽的表面上，偏离所述浮置栅电极正下方的区域，所述导电部分形成在所述器件区域中，偏离所述器件隔离沟槽。

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