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1. 发明申请

US20080145773A1 IMPRINT LITHOGRAPHY APPARATUS AND METHODS 失效
公开(公告)号：US20080145773A1
公开(公告)日：2008-06-19
申请号：US11539936
申请日：2006-10-10
申请人： Shih-Yuan Wang , Wei Wu , Zhaoning Yu
发明人： Shih-Yuan Wang , Wei Wu , Zhaoning Yu
IPC分类号： G03F9/00
CPC分类号： G03F7/0002 , B29C43/021 , B29C2043/025 , B82Y10/00 , B82Y40/00
摘要： An imprint lithography apparatus including a service station.
摘要翻译：包括维修站的压印光刻设备。

2. 发明授权

US07763978B2 Three-dimensional crossbar array systems and methods for writing information to and reading information stored in three-dimensional crossbar array junctions 有权
标题翻译：用于将信息写入和读取存储在三维交叉列阵列结点中的信息的三维交叉列阵列系统和方法
公开(公告)号：US07763978B2
公开(公告)日：2010-07-27
申请号：US11729228
申请日：2007-03-28
申请人： Wei Wu , R. Stanley Williams , Warren Robinett , Gregory S. Snider , Zhaoning Yu , Shih-Yuan Wang , Duncan Stewart
发明人： Wei Wu , R. Stanley Williams , Warren Robinett , Gregory S. Snider , Zhaoning Yu , Shih-Yuan Wang , Duncan Stewart
IPC分类号： H01L23/52 , H01L23/48 , H01L29/40
CPC分类号： H01L27/101 , B82Y10/00 , G11C13/00 , G11C13/0023 , G11C13/0033 , G11C2213/71 , G11C2213/79 , G11C2213/81 , H01L2924/0002 , Y10S977/762 , H01L2924/00
摘要： Various embodiments of the present invention are directed to three-dimensional crossbar arrays. In one aspect of the present invention, a three-dimensional crossbar array includes a plurality of crossbar arrays, a first demultiplexer, a second demultiplexer, and a third demultiplexer. Each crossbar array includes a first layer of nanowires, a second layer of nanowires overlaying the first layer of nanowires, and a third layer of nanowires overlaying the second layer of nanowires. The first demultiplexer is configured to address nanowires in the first layer of nanowires of each crossbar array, the second demultiplexer is configured to address nanowires in the second layer of nanowires of each crossbar array, and the third demultiplexer is configured to supply a signal to the nanowires in the third layer of nanowires of each crossbar array.
摘要翻译：本发明的各种实施例涉及三维横杆阵列。在本发明的一个方面，三维交叉开关阵列包括多个交叉开关阵列，第一解复用器，第二解复用器和第三解复用器。每个横杆阵列包括第一纳米线层，覆盖第一纳米线层的第二纳米线层和覆盖第二纳米线层的第三层纳米线。第一解复用器被配置为寻址每个交叉列阵列的纳米线的第一层中的纳米线，第二解复用器被配置为寻址每个交叉列阵列的第二纳米线层中的纳米线，并且第三解复用器被配置为向纳米线在每个交叉列阵列的第三层纳米线中。

3. 发明申请

US20080270042A1 Surface enhanced raman spectroscopy with periodically deformed sers-active structure 有权
标题翻译：表面增强拉曼光谱与周期性变形的主动结构
公开(公告)号：US20080270042A1
公开(公告)日：2008-10-30
申请号：US11796455
申请日：2007-04-26
申请人： Wei Wu , Zhiyong Li , Shih-Yuan Wang , Zhaoning Yu , R. Stanley Williams
发明人： Wei Wu , Zhiyong Li , Shih-Yuan Wang , Zhaoning Yu , R. Stanley Williams
IPC分类号： G01J3/44
CPC分类号： G01N21/658
摘要： An apparatus and related methods for facilitating surface-enhanced Raman spectroscopy (SERS) is described. A SERS-active structure near which a plurality of analyte molecules is disposed is periodically deformed at an actuation frequency. A synchronous measuring device synchronized with the actuation frequency receives Raman radiation scattered from the analyte molecules and generates therefrom at least one Raman signal measurement.
摘要翻译：描述了用于促进表面增强拉曼光谱（SERS）的装置和相关方法。多个分析物分子附近的SERS-活性结构以致动频率周期性地变形。与致动频率同步的同步测量装置接收从分析物分子散射的拉曼辐射，并由此产生至少一个拉曼信号测量。

4. 发明申请

US20080237886A1 Three-dimensional crossbar array systems and methods for writing information to and reading information stored in three-dimensional crossbar array junctions 有权
标题翻译：用于将信息写入和读取存储在三维交叉列阵列结点中的信息的三维交叉列阵列系统和方法
公开(公告)号：US20080237886A1
公开(公告)日：2008-10-02
申请号：US11729228
申请日：2007-03-28
申请人： Wei Wu , R. Stanley Williams , Warren Robinett , Gregory S. Snider , Zhaoning Yu , Shih-Yuan Wang , Duncan Stewart
发明人： Wei Wu , R. Stanley Williams , Warren Robinett , Gregory S. Snider , Zhaoning Yu , Shih-Yuan Wang , Duncan Stewart
IPC分类号： H01L23/48
CPC分类号： H01L27/101 , B82Y10/00 , G11C13/00 , G11C13/0023 , G11C13/0033 , G11C2213/71 , G11C2213/79 , G11C2213/81 , H01L2924/0002 , Y10S977/762 , H01L2924/00
摘要： Various embodiments of the present invention are directed to three-dimensional crossbar arrays. In one aspect of the present invention, a three-dimensional crossbar array includes a plurality of crossbar arrays, a first demultiplexer, a second demultiplexer, and a third demultiplexer. Each crossbar array includes a first layer of nanowires, a second layer of nanowires overlaying the first layer of nanowires, and a third layer of nanowires overlaying the second layer of nanowires. The first demultiplexer is configured to address nanowires in the first layer of nanowires of each crossbar array, the second demultiplexer is configured to address nanowires in the second layer of nanowires of each crossbar array, and the third demultiplexer is configured to supply a signal to the nanowires in the third layer of nanowires of each crossbar array.
摘要翻译：本发明的各种实施例涉及三维横杆阵列。在本发明的一个方面，三维交叉开关阵列包括多个交叉开关阵列，第一解复用器，第二解复用器和第三解复用器。每个横杆阵列包括第一纳米线层，覆盖第一纳米线层的第二纳米线层和覆盖第二纳米线层的第三层纳米线。第一解复用器被配置为寻址每个交叉列阵列的纳米线的第一层中的纳米线，第二解复用器被配置为寻址每个交叉列阵列的第二纳米线层中的纳米线，并且第三解复用器被配置为向纳米线在每个交叉列阵列的第三层纳米线中。

5. 发明申请

US20080094629A1 Optical gratings, lithography tools including such optical gratings and methods for using same for alignment 失效
标题翻译：光栅，包括这种光栅的光刻工具和用于对准的方法
公开(公告)号：US20080094629A1
公开(公告)日：2008-04-24
申请号：US11584461
申请日：2006-10-20
申请人： Wei Wu , Warren Robinett , Shih-Yuan Wang , Jun Gao , Zhaoning Yu
发明人： Wei Wu , Warren Robinett , Shih-Yuan Wang , Jun Gao , Zhaoning Yu
IPC分类号： G01B11/00
CPC分类号： G03F9/7049 , G03F9/7003
摘要： Lithography tools and substrates are aligned by generating geometric interference patterns using optical gratings associated with the lithography tools and substrates. In some embodiments, the relative position between a substrate and lithography tool is adjusted to cause at least one geometric shape to have a predetermined size or shape representing acceptable alignment. In additional embodiments, Moiré patterns that exhibit varying sensitivity are used to align substrates and lithography tools. Furthermore, lithography tools and substrates are aligned by causing radiation to interact with optical gratings positioned between the lithography tools and substrates. Lithography tools include an optical grating configured to generate a portion of an interference pattern that exhibits a sensitivity that increases as the relative position between the tools and a substrate moves towards a predetermined alignment position.
摘要翻译：通过使用与光刻工具和衬底相关的光栅产生几何干涉图案来对准平版印刷工具和衬底。在一些实施例中，调整衬底和光刻工具之间的相对位置以使得至少一个几何形状具有表示可接受对准的预定尺寸或形状。在另外的实施例中，使用呈现不同灵敏度的莫尔图案来对准衬底和光刻工具。此外，光刻工具和衬底通过使辐射与位于光刻工具和衬底之间的光栅相互作用来对准。平版印刷工具包括光栅，其被配置为产生表现出灵敏度的一部分干涉图案，该灵敏度随着工具和基板之间的相对位置朝向预定对准位置移动而增加。

6. 发明申请

US20070284779A1 Imprint lithography apparatus and methods 审中-公开
标题翻译：压印光刻设备及方法
公开(公告)号：US20070284779A1
公开(公告)日：2007-12-13
申请号：US11451993
申请日：2006-06-13
申请人： Wei Wu , Shih-Yuan Wang , Zhaoning Yu , R. Stanley Williams
发明人： Wei Wu , Shih-Yuan Wang , Zhaoning Yu , R. Stanley Williams
IPC分类号： B29C35/08 , B29C59/00
CPC分类号： B29C37/005 , B29C2035/0827 , B29C2059/023 , B82Y10/00 , B82Y40/00 , G03F7/0002
摘要： An apparatus for forming a pattern in a curable material carried on a substrate having one or more components with coefficients of thermal expansion that are substantially equal to the coefficient of thermal expansion of the substrate.
摘要翻译：一种在具有一个或多个热膨胀系数基本上等于基板热膨胀系数的一个或多个部件的基板上形成可固化材料的图案的装置。

7. 发明授权

US07768628B2 Contact lithography apparatus and method 失效
标题翻译：接触光刻设备和方法
公开(公告)号：US07768628B2
公开(公告)日：2010-08-03
申请号：US11548823
申请日：2006-10-12
申请人： Wei Wu , Shih-Yuan Wang , Duncan R. Stewart , R. Stanley Williams , Zhaoning Yu , Inkyu Park
发明人： Wei Wu , Shih-Yuan Wang , Duncan R. Stewart , R. Stanley Williams , Zhaoning Yu , Inkyu Park
IPC分类号： G03B27/02 , G03B27/42 , G03B27/58 , G03B27/20 , G03B27/22 , H01L21/00
CPC分类号： G03F7/7035
摘要： A contact lithography apparatus and a method use one or both of spacers and a mesa to facilitate pattern transfer. The apparatus and the method include one or both of a spacer that provides a spaced apart orientation of lithographic elements, such as a patterning tool and a substrate, when in mutual contact with the spacer and a mesa between the patterning tool and the substrate. The mesa supports a contact surface of one or both of the mold and the substrate. One or both of the spacers and the mesa may be non-uniform. One or more of the patterning tool, the substrate and the spacer is deformable, such that deformation thereof facilitates the pattern transfer.
摘要翻译：接触式光刻设备和方法使用间隔物和台面中的一个或两个以便于图案转印。该装置和方法包括当与间隔物相互接触并且在图案形成工具和衬底之间的台面时提供间隔开的光刻元件取向的间隔物中的一个或两个，诸如图案形成工具和衬底。台面支撑模具和基板之一或两者的接触表面。间隔物和台面中的一个或两个可能是不均匀的。图案形成工具，衬底和间隔件中的一个或多个可变形，使得其变形有利于图案转印。

8. 发明申请

US20080087636A1 Contact lithography apparatus and method 失效
标题翻译：接触光刻设备和方法
公开(公告)号：US20080087636A1
公开(公告)日：2008-04-17
申请号：US11548823
申请日：2006-10-12
申请人： Wei Wu , Shih-Yuan Wang , Duncan R. Stewart , R. Stanley Williams , Zhaoning Yu , Inkyu Park
发明人： Wei Wu , Shih-Yuan Wang , Duncan R. Stewart , R. Stanley Williams , Zhaoning Yu , Inkyu Park
IPC分类号： B44C1/22 , B29D11/00
CPC分类号： G03F7/7035
摘要： A contact lithography apparatus and a method use one or both of spacers and a mesa to facilitate pattern transfer. The apparatus and the method include one or both of a spacer that provides a spaced apart orientation of lithographic elements, such as a patterning tool and a substrate, when in mutual contact with the spacer and a mesa between the patterning tool and the substrate. The mesa supports a contact surface of one or both of the mold and the substrate. One or both of the spacers and the mesa may be non-uniform. One or more of the patterning tool, the substrate and the spacer is deformable, such that deformation thereof facilitates the pattern transfer.
摘要翻译：接触式光刻设备和方法使用间隔物和台面中的一个或两个以便于图案转印。该装置和方法包括当与间隔物相互接触并且在图案形成工具和衬底之间的台面时提供间隔开的光刻元件取向的间隔物中的一个或两个，诸如图案形成工具和衬底。台面支撑模具和基板之一或两者的接触表面。间隔物和台面中的一个或两个可能是不均匀的。图案形成工具，衬底和间隔件中的一个或多个可变形，使得其变形有利于图案转印。

9. 发明授权

US07832416B2 Imprint lithography apparatus and methods 失效
标题翻译：压印光刻设备及方法
公开(公告)号：US07832416B2
公开(公告)日：2010-11-16
申请号：US11539936
申请日：2006-10-10
申请人： Shih-Yuan Wang , Wei Wu , Zhaoning Yu
发明人： Shih-Yuan Wang , Wei Wu , Zhaoning Yu
IPC分类号： B08B3/04
CPC分类号： G03F7/0002 , B29C43/021 , B29C2043/025 , B82Y10/00 , B82Y40/00
摘要： An imprint lithography apparatus including a service station.
摘要翻译：包括维修站的压印光刻设备。

10. 发明授权

US07829050B2 Methods of forming single-crystal metal-silicide nanowires and resulting nanowire structures 失效
标题翻译：形成单晶金属硅化物纳米线和所得纳米线结构的方法
公开(公告)号：US07829050B2
公开(公告)日：2010-11-09
申请号：US11707601
申请日：2007-02-13
申请人： Zhaoning Yu , Zhiyong Li , Wei Wu , Shih-Yuan Wang , R. Stanley Williams
发明人： Zhaoning Yu , Zhiyong Li , Wei Wu , Shih-Yuan Wang , R. Stanley Williams
IPC分类号： C01B21/068
CPC分类号： C30B29/10 , C30B29/60
摘要： Various embodiments of the present invention are directed to methods of forming single-crystal metal-silicide nanowires and resulting nanowire structures. In one embodiment of the present invention, a method of fabricating nanowires is disclosed. In the method, a number of nanowire-precursor members are formed. Each of the nanowire-precursor members includes a substantially single-crystal silicon region and a polycrystalline-metallic region. The substantially single-crystal silicon region and the polycrystalline-metallic region of each of the nanowire-precursor members is reacted to form corresponding substantially single-crystal metal-silicide nanowires. In another embodiment of the present invention, a nanowire structure is disclosed. The nanowire structure includes a substrate having an electrically insulating layer. A number of substantially single-crystal metal-silicide nanowires are positioned on the electrically insulating layer.
摘要翻译：本发明的各种实施方案涉及形成单晶金属硅化物纳米线和所得纳米线结构的方法。在本发明的一个实施例中，公开了一种制造纳米线的方法。在该方法中，形成许多纳米线前体部件。每个纳米线前体构件包括基本单晶硅区域和多晶金属区域。每个纳米线前体部件的大致单晶硅区域和多晶金属区域反应形成对应的基本单晶金属硅化物纳米线。在本发明的另一个实施方案中，公开了一种纳米线结构。纳米线结构包括具有电绝缘层的衬底。大量单晶金属硅化物纳米线位于电绝缘层上。

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