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1. 发明授权

US07681155B2 Method of designing and manufacturing semiconductor device 失效
标题翻译：半导体器件的设计和制造方法
公开(公告)号：US07681155B2
公开(公告)日：2010-03-16
申请号：US11858551
申请日：2007-09-20
申请人： Shigeyuki Takagi , Shigeru Kinoshita , Hiroshi Watanabe , Toshitake Yaegashi
发明人： Shigeyuki Takagi , Shigeru Kinoshita , Hiroshi Watanabe , Toshitake Yaegashi
IPC分类号： G06F17/50
CPC分类号： G06F17/5036
摘要： A semiconductor device designing method includes calculating capacitance. The semiconductor device has a semiconductor substrate, an insulator formed on the semiconductor substrate, and an electrode formed on the insulator. The capacitance is calculated under an approximation assuming a portion of the semiconductor substrate, the insulator and a portion of the electrode to be one of a conductor and a dielectric depending on electric characteristics thereof, respectively.
摘要翻译：半导体器件设计方法包括计算电容。半导体器件具有半导体衬底，形成在半导体衬底上的绝缘体和形成在绝缘体上的电极。假设半导体衬底的一部分，绝缘体和电极的一部分分别根据其电特性分别为导体和电介质之一，在近似值下计算电容。

2. 发明申请

US20080256496A1 METHOD OF DESIGNING AND MANUFACTURING SEMICONDUCTOR DEVICE 失效
标题翻译：设计和制造半导体器件的方法
公开(公告)号：US20080256496A1
公开(公告)日：2008-10-16
申请号：US11858551
申请日：2007-09-20
申请人： Shigeyuki Takagi , Shigeru Kinoshita , Hiroshi Watanabe , Toshitake Yaegashi
发明人： Shigeyuki Takagi , Shigeru Kinoshita , Hiroshi Watanabe , Toshitake Yaegashi
IPC分类号： G06F17/50
CPC分类号： G06F17/5036
摘要： A semiconductor device designing method includes calculating capacitance. The semiconductor device has a semiconductor substrate, an insulator formed on the semiconductor substrate, and an electrode formed on the insulator. The capacitance is calculated under an approximation assuming a portion of the semiconductor substrate, the insulator and a portion of the electrode to be one of a conductor and a dielectric depending on electric characteristics thereof, respectively.
摘要翻译：半导体器件设计方法包括计算电容。半导体器件具有半导体衬底，形成在半导体衬底上的绝缘体和形成在绝缘体上的电极。假设半导体衬底的一部分，绝缘体和电极的一部分分别根据其电特性分别为导体和电介质之一，在近似值下计算电容。

3. 发明申请

US20080244481A1 METHOD FOR DESIGNING AND MANUFACTURING SEMICONDUCTOR DEVICE AND SOFTWARE THEREFOR 审中-公开
标题翻译：用于设计和制造半导体器件及其软件的方法
公开(公告)号：US20080244481A1
公开(公告)日：2008-10-02
申请号：US11859162
申请日：2007-09-21
申请人： Shigeru Kinoshita , Shigeyuki Takagi , Hidehiko Yabuhara
发明人： Shigeru Kinoshita , Shigeyuki Takagi , Hidehiko Yabuhara
IPC分类号： G06F17/50
CPC分类号： G06F17/5036 , G06F17/5045
摘要： A method for designing a semiconductor device including a semiconductor substrate and an interconnect on the semiconductor substrate, with X-direction being one direction parallel to the semiconductor substrate, Y-direction being a direction parallel to the semiconductor substrate and perpendicular to the X-direction, and Z-direction being perpendicular to the semiconductor substrate, the method includes: determining a cross-sectional configuration in the X-Z direction; three-dimensionalizing the cross-sectional configuration with a range in the Y-direction being specified; and using the three-dimensionalized configuration as a model.
摘要翻译：一种用于设计包括半导体衬底和半导体衬底上的互连的半导体器件的方法，其中X方向是与半导体衬底平行的一个方向，Y方向是与半导体衬底平行的方向并垂直于X方向并且Z方向垂直于所述半导体衬底，所述方法包括：确定XZ方向上的横截面构造; 在规定Y方向的范围内对截面结构进行三维化; 并使用三维化配置作为模型。

4. 发明授权

US07791127B2 Semiconductor memory and method for manufacturing a semiconductor memory 失效
标题翻译：半导体存储器和半导体存储器的制造方法
公开(公告)号：US07791127B2
公开(公告)日：2010-09-07
申请号：US11676847
申请日：2007-02-20
申请人： Makoto Mizukami , Shigeru Kinoshita , Shigeyuki Takagi
发明人： Makoto Mizukami , Shigeru Kinoshita , Shigeyuki Takagi
IPC分类号： H01L27/115 , H01L29/788 , H01L21/8247
CPC分类号： H01L27/115 , G11C11/5628 , G11C16/0483 , H01L27/11521 , H01L27/11524
摘要： A semiconductor memory includes: a first memory cell transistor including: a first floating gate electrode provided on and insulated from the substrate; and a first control gate electrode provided on and insulated from the first floating gate electrode; and a second memory cell transistor including: a second floating gate electrode provided on and insulated from the substrate, an upper surface being larger than a lower surface, and the upper surface being lower than an upper surface of the first floating gate electrode; and a second control gate electrode provided on and insulated from the second floating gate electrode.
摘要翻译：半导体存储器包括：第一存储单元晶体管，包括：设置在基板上并与基板绝缘的第一浮栅; 以及设置在所述第一浮栅上并与所述第一浮栅绝缘的第一控制栅极; 以及第二存储单元晶体管，包括：设置在所述基板上并与所述基板绝缘的第二浮栅，上表面大于下表面，并且所述上表面低于所述第一浮栅电极的上表面; 以及设置在第二浮栅上并与第二浮栅电极绝缘的第二控制栅电极。

5. 发明申请

US20070198766A1 SEMICONDUCTOR MEMORY AND METHOD FOR MANUFACTURING A SEMICONDUCTOR MEMORY 失效
标题翻译：半导体存储器和制造半导体存储器的方法
公开(公告)号：US20070198766A1
公开(公告)日：2007-08-23
申请号：US11676847
申请日：2007-02-20
申请人： Makoto Mizukami , Shigeru Kinoshita , Shigeyuki Takagi
发明人： Makoto Mizukami , Shigeru Kinoshita , Shigeyuki Takagi
IPC分类号： G06F12/00
CPC分类号： H01L27/115 , G11C11/5628 , G11C16/0483 , H01L27/11521 , H01L27/11524
摘要： A semiconductor memory includes: a first memory cell transistor including: a first floating gate electrode provided on and insulated from the substrate; and a first control gate electrode provided on and insulated from the first floating gate electrode; and a second memory cell transistor including: a second floating gate electrode provided on and insulated from the substrate, an upper surface being larger than a lower surface, and the upper surface being lower than an upper surface of the first floating gate electrode; and a second control gate electrode provided on and insulated from the second floating gate electrode.
摘要翻译：半导体存储器包括：第一存储单元晶体管，包括：设置在基板上并与基板绝缘的第一浮栅; 以及设置在所述第一浮栅上并与所述第一浮栅绝缘的第一控制栅极; 以及第二存储单元晶体管，包括：设置在所述基板上并与所述基板绝缘的第二浮栅，上表面大于下表面，并且所述上表面低于所述第一浮栅电极的上表面; 以及设置在第二浮栅上并与第二浮栅电极绝缘的第二控制栅电极。

6. 发明授权

US09407065B2 Semiconductor laser 有权
标题翻译：半导体激光器
公开(公告)号：US09407065B2
公开(公告)日：2016-08-02
申请号：US13565008
申请日：2012-08-02
申请人： Shigeyuki Takagi , Hidehiko Yabuhara , Akira Maekawa , Takayoshi Fujii , Yasutomo Shiomi
发明人： Shigeyuki Takagi , Hidehiko Yabuhara , Akira Maekawa , Takayoshi Fujii , Yasutomo Shiomi
IPC分类号： H01S5/34 , H01S5/20 , H01S5/22 , B82Y20/00 , H01S5/12 , H01S5/32
CPC分类号： H01S5/3402 , B82Y20/00 , H01S1/00 , H01S5/12 , H01S5/2022 , H01S5/2031 , H01S5/2054 , H01S5/22 , H01S5/2219 , H01S5/3211 , H01S5/3425 , H01S5/34333 , H01S2301/166 , H01S2301/176
摘要： A semiconductor laser includes: a stacked body having an active layer including a quantum well layer, the active layer having a cascade structure including a first region capable of emitting infrared laser light with a wavelength of not less than 12 μm and not more than 18 μm by an intersubband optical transition of the quantum well layer and a second region capable of relaxing energy of a carrier alternately stacked, the stacked body having a ridge waveguide and being capable of emitting the infrared laser light; and a dielectric layer provided so as to sandwich both sides of at least part of side surfaces of the stacked body, a wavelength at which a transmittance of the dielectric layer decreases to 50% being 16 μm or more, the dielectric layer having a refractive index lower than refractive indices of all layers constituting the active layer.
摘要翻译：半导体激光器包括：具有包括量子阱层的有源层的层叠体，所述有源层具有级联结构，所述级联结构包括能够发射波长不小于12μm且不大于18μm的红外激光的第一区域通过量子阱层的子带间光学跃迁和能够缓和交替堆叠的载流子的能量的第二区域，该层叠体具有脊波导并能够发射红外激光; 以及电介质层，其被设置为夹着所述层叠体的至少一部分侧面的两侧，所述电介质层的透射率降低至50％的波长为16μm以上，所述电介质层具有折射率低于构成活性层的所有层的折射率。

7. 发明授权

US06402847B1 Dry processing apparatus and dry processing method 失效
标题翻译：干式加工设备和干式加工方法
公开(公告)号：US06402847B1
公开(公告)日：2002-06-11
申请号：US09449746
申请日：1999-11-26
申请人： Shigeyuki Takagi , Makoto Saito , Seiji Onoue , Ichiro Tohno , Hiroshi Nishimura
发明人： Shigeyuki Takagi , Makoto Saito , Seiji Onoue , Ichiro Tohno , Hiroshi Nishimura
IPC分类号： C23C1600
CPC分类号： H01L21/67017 , C23C16/4405 , C23C16/4412 , H01J37/3244 , H01J37/32834
摘要： A dry processing apparatus includes a lower electrode for holding a substrate to be processed in a chamber, a shower head, provided to face a surface of the lower electrode, on which the substrate to be processed is placed, for supplying a process gas to the substrate to be processed, placed on the lower electrode, and a pumping channel formed to surround an outer circumference of the lower electrode, wherein a pumping gap portion for communicating a processing space formed between the lower electrode and the shower head, and the pumping channel with each other, is made such that a width of the gap portion differs between an exhaust pump side where the pumping channel is connected to an exhaust pump, and an opposite side thereto.
摘要翻译：干燥处理装置包括：用于保持室内待处理基板的下部电极，设置成面向设置有待处理基板的下部电极的表面的喷头，用于将处理气体供给到待处理的基板，放置在下电极上，以及形成为围绕下电极的外周的泵浦通道，其中用于连通形成在下电极和喷头之间的处理空间的泵送间隙部分和泵送通道彼此相对地形成为使得在泵送通道与排气泵连接的排气泵侧与其相对侧之间的间隙部分的宽度不同。

8. 发明授权

US4717526A Poloidal coil arrangement for a nuclear fusion apparatus 失效
标题翻译：用于核聚变装置的阳离子线圈装置
公开(公告)号：US4717526A
公开(公告)日：1988-01-05
申请号：US696576
申请日：1985-01-30
申请人： Kazuo Kuno , Shigeyuki Takagi , Daisaburo Nagata , Shintaro Fukumoto
发明人： Kazuo Kuno , Shigeyuki Takagi , Daisaburo Nagata , Shintaro Fukumoto
IPC分类号： G21B1/11 , H01F7/20 , H05H1/12 , G21C1/00 , H01F27/24
CPC分类号： G21B1/11
摘要： A poloidal coil arrangement for a nuclear fushion apparatus comprises at least two poloidal coil sections each including a plurality of conductor turns, and a plurality of bridging joining members for electrically and metallurgically joining the turn ends of the conductor turns to form a plurality of complete turns. The joining members have end surfaces shaped such that the joining members can be supported by the end surfaces of the conductor turns. The length in the circumferential direction of the top side of each joining member is nearly equal to or shorter than the length in the circumferential direction of the opposing lower side of the upper joining member located above that joining member.
摘要翻译：用于核冲击装置的极线圈装置包括至少两个极性线圈部分，每个线圈部分包括多个导体匝，以及多个桥接接合部件，用于电连接和冶金连接导体匝的匝端以形成多个完整匝。接合构件具有端面，其形状使得接合构件能够被导体匝的端面支撑。各接合构件的上侧的圆周方向的长度大致等于或短于位于该接合构件上方的上接合构件的相对的下侧的周向长度。

9. 发明申请

US20140035443A1 ELECTRIC CYLINDER AND ELECTRIC CYLINDER SYSTEM 有权
标题翻译：电动气缸和电动气缸系统
公开(公告)号：US20140035443A1
公开(公告)日：2014-02-06
申请号：US14110870
申请日：2012-02-28
申请人： Kyoji Furukawa , Shigeyuki Takagi
发明人： Kyoji Furukawa , Shigeyuki Takagi
IPC分类号： H02K11/00 , H02K7/06
CPC分类号： H02K11/20 , B30B1/186 , F16H25/2021 , F16H2025/2081 , F16H2025/2096 , H02K7/06
摘要： An electric cylinder includes: an outer cylinder including, on one end side, a fixing section; a rod configured to be capable of expanding and contracting in an axis direction from an opening on the one end side of the outer cylinder; a bearing provided on the other end side end and on the inside of the outer cylinder; a rotating shaft supported by the bearing and driven to rotate; a screw mechanism configured to convert a rotational motion of the rotating shaft into a linear motion of the rod and transmit the linear motion; and a distortion detecting unit provided on the outer circumference of the outer cylinder. The outer cylinder includes at least two or more division members that can be divided and combined. The distortion detecting unit is provided in one division member among the two or more division members.
摘要翻译：电动缸包括：外筒，在一端侧包括固定部; 杆构造成能够从外筒的一端侧的开口在轴向上伸缩; 设置在外筒的另一端侧和内侧的轴承; 由轴承支撑并被驱动旋转的旋转轴; 螺杆机构，其构造成将所述旋转轴的旋转运动转换成所述杆的线性运动并传递所述直线运动; 以及设置在所述外筒的外周上的变形检测部。外筒包括至少两个或更多个可分割和组合的分割构件。失真检测单元设置在两个以上分割部件的一个分割部件中。

10. 发明申请

US20120181504A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20120181504A1
公开(公告)日：2012-07-19
申请号：US13352804
申请日：2012-01-18
申请人： Shigeyuki Takagi , Hidehiko Yabuhara
发明人： Shigeyuki Takagi , Hidehiko Yabuhara
IPC分类号： H01L33/04 , H01L33/30
CPC分类号： H01S5/34313 , B82Y20/00 , H01S5/2022 , H01S5/22 , H01S5/2206 , H01S5/222 , H01S5/2275 , H01S5/3213 , H01S5/3218 , H01S5/3402
摘要： According to an embodiment, a semiconductor light emitting device is configured to emit light by energy relaxation of an electron between subbands of a plurality of quantum wells. The device includes an active layer and at least a pair of cladding layers. The active layer is provided in a stripe shape extending in a direction parallel to an emission direction of the light, and includes the plurality of quantum wells; and the active layer emits the light with a wavelength of 10 μm or more. Each of the cladding layers is provided both on and under the active layer respectively and have a lower refractive index than the active layer. At least one portion of the cladding layers contains a material having a different lattice constant from the active layer and has a lower optical absorption at a wavelength of the light than the other portion.
摘要翻译：根据实施例，半导体发光器件被配置为通过在多个量子阱的子带之间的电子的能量弛豫来发光。该器件包括有源层和至少一对覆层。有源层设置成在与光的发射方向平行的方向上延伸的条纹形状，并且包括多个量子阱; 有源层发射波长为10μm以上的光。每个包层分别设置在有源层上和下方，并且具有比有源层更低的折射率。包覆层的至少一部分包含与有源层具有不同晶格常数的材料，并且在比其他部分的光的波长处具有较低的光吸收。

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